High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2semiconducting barrier with a low resistance–area product | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2semiconducting barrier with a low resistance–area product
(化合物半導体CIGS障壁を用いた磁気トンネル接合の高出力特性)

Koki Mukaiyama, Shinya Kasai, Yukiko K. Takahashi, Kouta Kondou, Yoshichika Otani, Seiji Mitani, Kazuhiro Hono.

Applied Physics Express 10 [1] 013008. 2017.

https://doi.org/10.7567/apex.10.013008

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-01-06 23:18:30 +0900 更新時刻: 2025-04-14 06:11:22 +0900

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