Growth of Semiconductor GaN Hollow Spheres and Nanotubes with Very Thin Shell Size via ontrollable Liquid-Gas Interface Chemical Reaction Route | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Growth of Semiconductor GaN Hollow Spheres and Nanotubes with Very Thin Shell Size via ontrollable Liquid-Gas Interface Chemical Reaction Route
(GaNの空孔粒子やナノチューブの合成)

Long-Wei Yin, Yoshio Bando, Mu-Sen Li, Dmitri Golberg.

Small 1 [11] 1094-1099. 2005.

https://doi.org/10.1002/smll.200500168

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作成時刻: 2016-05-24 14:53:09 +0900更新時刻: 2024-03-29 21:28:57 +0900

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