HOME > Article > DetailDynamic moderation of an electric field using a SiO2switching layer in TaOx-based ReRAM(Dynamic moderation of an electric field using a SiO2 switching layer in TaOx-based ReRAM)Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono. physica status solidi (RRL) - Rapid Research Letters 9 [3] 166-170. 2015.https://doi.org/10.1002/pssr.201409531 NIMS author(s)TSURUOKA, TohruAONO, MasakazuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:45:49 +0900Updated at: 2024-05-02 06:15:04 +0900