Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
(Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:22:09 +0900 更新時刻: 2026-09-29 07:05:29 +0900
