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Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
(Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies)

Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Takio Kizu, Maki Shimizu, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi.
Applied Physics Letters 104 [10] 102103. 2014.
https://doi.org/10.1063/1.4868303

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      作成時刻: 2016-05-24 17:22:09 +0900更新時刻: 2024-03-31 13:56:17 +0900

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