Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies

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Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies
(Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies)

Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Takio Kizu, Maki Shimizu, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi.

作成時刻: 2016-05-24 17:22:09 +0900 更新時刻: 2025-06-14 07:05:10 +0900