Reduction in Raman Intensity of Si(111) due to Defect Formation During Ion Irradiation
(イオン照射中の欠陥生成によるSi(111)面のラマン強度減少)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 11:36:00 +0900 Updated at: 2026-10-03 05:51:02 +0900