Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al₂O₃/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano.

Applied Physics Letters 117 [24] 242104. 2020.

https://doi.org/10.1063/5.0028516

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-06-10 03:00:20 +0900 更新時刻: 2026-10-30 07:35:39 +0900

▲ページトップへ移動