Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

O. Romanyuk; A. Paszuk; I. Bartoš; R.G. Wilks; M. Nandy; J. Bombsch; C. Hartmann; R. Félix; S. Ueda; I. Gordeev; J. Houdkova; P. Kleinschmidt; P. Machek; M. Bär; P. Jiříček; T. Hannappel

doi:10.1016/j.apsusc.2021.150514

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Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

O. Romanyuk, A. Paszuk, I. Bartoš, R.G. Wilks, M. Nandy, J. Bombsch, C. Hartmann, R. Félix, S. Ueda, I. Gordeev, J. Houdkova, P. Kleinschmidt, P. Machek, M. Bär, P. Jiříček, T. Hannappel.

Applied Surface Science 565 150514. 2021.

https://doi.org/10.1016/j.apsusc.2021.150514

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作成時刻: 2021-07-27 03:00:18 +0900更新時刻: 2024-04-02 04:49:01 +0900