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Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck.
Applied Physics Letters 125 [21] 213901. 2024.

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作成時刻: 2024-11-27 17:35:25 +0900更新時刻: 2025-01-29 04:30:31 +0900

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