HOME > 論文 > 書誌詳細Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantationMartin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck. Applied Physics Letters 125 [21] 213901. 2024.https://doi.org/10.1063/5.0233754 Open Access Materials Data Repository (MDR) NIMS著者森 孝雄Materials Data Repository (MDR)上の本文・データセットMDRavailable Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation 作成時刻: 2024-11-27 17:35:25 +0900 更新時刻: 2026-10-20 04:32:41 +0900
