Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier | SAMURAI, NIMS Researchers Directory Service

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Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier

Yoshiaki Kikuchi, Antony Peter, Bartlomiej Jan Pawlak, An De Keersgieter, Pierre Eyben, Naoto Horiguchi, Anda Mocuta.

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 [6] 061205. 2018.

https://doi.org/10.1116/1.5053455

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-09-01 18:18:40 +0900 Updated at: 2026-11-04 07:11:27 +0900

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