Interface engineering for the passivation of c-Si with O<sub>3</sub>-based atomic layer deposited AlO<sub>x</sub> for solar cell application | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application
(O3 ベースAlOx結晶Si 太陽電池パッシベーションにおける界面特性)

Hyunju Lee, Tomihisa Tachibana, Norihiro Ikeno, Hiroki Hashiguchi, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Toyohiro Chikyow, Atsushi Ogura.

Applied Physics Letters 100 [14] 143901. 2012.

https://doi.org/10.1063/1.3701280

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作成時刻: 2016-05-24 16:40:55 +0900更新時刻: 2024-03-31 12:41:43 +0900

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