HOME > 論文 > 書誌詳細Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structuresYoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai. Journal of Applied Physics 112 [10] 106103. 2012.https://doi.org/10.1063/1.4767367 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:50:40 +0900 更新時刻: 2026-09-29 07:59:28 +0900
