Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

Yoshiaki Kikuchi; Toby Hopf; Geert Mannaert; Jean-Luc Everaert; Stefan Kubicek; Pierre Eyben; Andrew Waite; Jose Ignacio del Agua Borniquel; Naushad Variam; Dan Mocuta; Naoto Horiguchi; Yoshiaki Kikuchi; Toby Hopf; Geert Mannaert; Jean-Luc Everaert; Stefan Kubicek; Pierre Eyben; Andrew Waite; Jose Ignacio del Agua Borniquel; Naushad Variam; Dan Mocuta; Naoto Horiguchi

doi:10.1016/j.sse.2018.11.003

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Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

Yoshiaki Kikuchi, Toby Hopf, Geert Mannaert, Jean-Luc Everaert, Stefan Kubicek, Pierre Eyben, Andrew Waite, Jose Ignacio del Agua Borniquel, Naushad Variam, Dan Mocuta, Naoto Horiguchi.

Solid-State Electronics 152 58-64. 2019.

https://doi.org/10.1016/j.sse.2018.11.003

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作成時刻: 2026-09-01 18:18:39 +0900 更新時刻: 2026-10-03 07:10:01 +0900