Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami; Yuto Ando; Atsushi Tanaka; Kentaro Nagamatsu; Manato Deki; Maki Kushimoto; Shugo Nitta; Yoshio Honda; Hiroshi Amano; Yoshihiro Sugawara; Yong-Zhao Yao; Yukari Ishikawa; Shigeyoshi Usami; Yuto Ando; Atsushi Tanaka; Kentaro Nagamatsu; Manato Deki; Maki Kushimoto; Shugo Nitta; Yoshio Honda; Hiroshi Amano; Yoshihiro Sugawara; Yong-Zhao Yao; Yukari Ishikawa

doi:10.1063/1.5024704

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa.

Applied Physics Letters 112 [18] 182106. 2018.

https://doi.org/10.1063/1.5024704

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-06-10 03:00:19 +0900 Updated at: 2026-10-30 07:23:03 +0900