Exciton diffusion in a hBN-encapsulated monolayer MoSe2

Takato Hotta; Shohei Higuchi; Akihiro Ueda; Keisuke Shinokita; Yuhei Miyauchi; Kazunari Matsuda; Keiji Ueno; Takashi Taniguchi; Kenji Watanabe; Ryo Kitaura

doi:10.1103/physrevb.102.115424

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Exciton diffusion in hBN -encapsulated monolayer MoSe2
(Exciton diffusion in a hBN-encapsulated monolayer MoSe2)

Takato Hotta, Shohei Higuchi, Akihiro Ueda, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Ryo Kitaura.

Physical Review B 102 [11] 115424. 2020.

https://doi.org/10.1103/physrevb.102.115424

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北浦良

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-07-15 03:00:23 +0900更新時刻: 2024-03-31 13:26:00 +0900

Exciton diffusion in hBN -encapsulated monolayer MoSe2(Exciton diffusion in a hBN-encapsulated monolayer MoSe2)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Exciton diffusion in hBN -encapsulated monolayer MoSe2
(Exciton diffusion in a hBN-encapsulated monolayer MoSe2)