Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model

Y. Han, T. Miyamoto, T. Otaki, N. Takamura, N. Kida, N. Osakabe, J. Tsurumi, S. Watanabe, T. Okamoto, J. Takeya, H. Okamoto.

Applied Physics Letters 120 [5] 053302. 2022.

https://doi.org/10.1063/5.0073133

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作成時刻: 2022-10-18 03:22:47 +0900更新時刻: 2025-01-09 08:42:21 +0900

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