HOME > Article > Detail(A study of Schottky barrier formation for Ga/Si(111)-(2x1) and Sb/Si(111)-(2×1) interfaces)AONO, Masakazu, J.L.Freeout, F.J.Himpsel, D.E.Eastman. Journal of Vacuum Science and Technology 681. 1981.NIMS author(s)AONO, MasakazuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-09-05 10:25:10 +0900 Updated at: 2022-09-05 10:25:10 +0900