Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect0free Cl neutral etching process

Tomohiro Kubota; Takeshi Hashimoto; Yasushi Ishikawa; Seiji Samukawa; Atsushi Miura; Yukiharu Uraoka; Takashi Fuyuki; Masaki Takeguchi; Kensuke Nishioka; Ichiro Yamashita; Tomohiro Kubota; Takeshi Hashimoto; Yasushi Ishikawa; Seiji Samukawa; Atsushi Miura; Yukiharu Uraoka; Takashi Fuyuki; Masaki Takeguchi; Kensuke Nishioka; Ichiro Yamashita

doi:10.1063/1.2404608

Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect0free Cl neutral etching process

Tomohiro Kubota, Takeshi Hashimoto, Yasushi Ishikawa, Seiji Samukawa, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki, Masaki Takeguchi, Kensuke Nishioka, Ichiro Yamashita.

Applied Physics Letters 89 [23] 233127. 2006.

https://doi.org/10.1063/1.2404608

NIMS author(s)

TAKEGUCHI, Masaki

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 15:06:38 +0900Updated at: 2024-05-02 05:08:25 +0900