Theoretical model for artificial structure modulation of HfO<sub>2</sub>/SiO<sub><i>x</i></sub>/Si interface by deposition of a dopant material | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Theoretical model for artificial structure modulation of HfO₂/SiO_x/Si interface by deposition of a dopant material
(Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material)

Naoto Umezawa, Kenji Shiraishi.

Applied Physics Letters 100 [9] 092904. 2012.

https://doi.org/10.1063/1.3689968

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:39:10 +0900 更新時刻: 2026-10-30 06:51:50 +0900

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