HOME > Article > DetailResidual strain in epitaxially grown ZnSe/GaAs studied by two-photon absorption spectroscopy江良晧, 南不二雄, 加藤幸雄, 吉田幸司, 井上久遠. Applied Physics Letters 712-714. 1991.NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-09-05 10:33:26 +0900 Updated at: 2022-09-05 10:33:26 +0900