Band Gap and Electronic Structure of an Epitaxial, Semiconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Cr</mml:mi><mml:mn>0.80</mml:mn></mml:msub><mml:msub><mml:mi>Al</mml:mi><mml:mn>0.20</mml:mn></mml:msub></mml:math>Thin Film | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Band Gap and Electronic Structure of an Epitaxial, SemiconductingCr0.80Al0.20Thin Film
(Band Gap and Electronic Structure of an Epitaxial, SemiconductingCr0.80Al0.20Thin Film)

Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, C. S. Fadley.

Physical Review Letters 105 [23] 236404. 2010.

https://doi.org/10.1103/physrevlett.105.236404

NIMS著者

上田茂典

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:10:21 +0900更新時刻: 2024-03-31 18:20:59 +0900

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