Growth of InAs Quantum Dot Without Introducing Wetting Layer by Alternate Deposition of InAs and GaAs with Quasi-monolayer

KIMJON, GSU; KOGUCHI, Nobuyuki; D. Y. Lee; I. H. Bae; J.I..Lee; Gu-Hyun Kim; S. K. Kang; S. I. Ban; Jin SooKim; S. H. Lee; H. K. Choi; Minhyon Jeon; Jae-Young Leem; KIMJON, GSU; KOGUCHI, Nobuyuki; D. Y. Lee; I. H. Bae; J.I..Lee; Gu-Hyun Kim; S. K. Kang; S. I. Ban; Jin SooKim; S. H. Lee; H. K. Choi; Minhyon Jeon; Jae-Young Leem

Growth of InAs Quantum Dot Without Introducing Wetting Layer by Alternate Deposition of InAs and GaAs with Quasi-monolayer
(準単子層でのInAsとGaAsの交互配置による湿潤性層の導入を伴わないInAsクワンタムドットの成長)

KIMJON, GSU, KOGUCHI, Nobuyuki, D. Y. Lee, I. H. Bae, J.I..Lee, Gu-Hyun Kim, S. K. Kang, S. I. Ban, Jin SooKim, S. H. Lee, H. K. Choi, Minhyon Jeon, Jae-Young Leem.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S476-S479. 2003.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 11:56:03 +0900 Updated at: 2018-12-15 01:44:59 +0900

Growth of InAs Quantum Dot Without Introducing Wetting Layer by Alternate Deposition of InAs and GaAs with Quasi-monolayer(準単子層でのInAsとGaAsの交互配置による湿潤性層の導入を伴わないInAsクワンタムドットの成長)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Growth of InAs Quantum Dot Without Introducing Wetting Layer by Alternate Deposition of InAs and GaAs with Quasi-monolayer
(準単子層でのInAsとGaAsの交互配置による湿潤性層の導入を伴わないInAsクワンタムドットの成長)