Identifying valence band structure of transient phase in VO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin film by hard x-ray photoemission | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Identifying valence band structure of transient phase in VO2thin film by hard x-ray photoemission
(Identifying valence band structure of transient phase in VO2thin film by hard x-ray photoemission)

Teruo Kanki, Hidefumi Takami, Shigenori Ueda, Azusa N. Hattori, Ken Hattori, Hiroshi Daimon, Keisuke Kobayashi, Hidekazu Tanaka.

Physical Review B 84 [8] 085107. 2011.

https://doi.org/10.1103/physrevb.84.085107

NIMS著者

上田茂典

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:21:35 +0900更新時刻: 2024-11-14 05:19:06 +0900

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