アンチモンドープ(ATO)多孔質薄膜の合成と電気伝導性

Norihiro Suzuki; Yuichiro Kamachi; Ya-Dong Chiang; Kevin C.-W. Wu; Shinsuke Ishihara; Keisuke Sato; Naoki Fukata; Mikiya Matsuura; Kazuhiko Maekawa; Hirofumi Tanabe; Katsuhiko Ariga; Yusuke Yamauchi

doi:10.1039/c3ce40189h

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Synthesis of mesoporous antimony-doped tin oxide (ATO) thin films and investigation of their electrical conductivity
(アンチモンドープ(ATO)多孔質薄膜の合成と電気伝導性)

Norihiro Suzuki, Yuichiro Kamachi, Ya-Dong Chiang, Kevin C.-W. Wu, Shinsuke Ishihara, Keisuke Sato, Naoki Fukata, Mikiya Matsuura, Kazuhiko Maekawa, Hirofumi Tanabe, Katsuhiko Ariga, Yusuke Yamauchi.

CrystEngComm 15 [22] 4404. 2013.

https://doi.org/10.1039/c3ce40189h

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:08:30 +0900更新時刻: 2024-04-02 04:06:58 +0900

Synthesis of mesoporous antimony-doped tin oxide (ATO) thin films and investigation of their electrical conductivity(アンチモンドープ(ATO)多孔質薄膜の合成と電気伝導性)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Synthesis of mesoporous antimony-doped tin oxide (ATO) thin films and investigation of their electrical conductivity
(アンチモンドープ(ATO)多孔質薄膜の合成と電気伝導性)