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Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass
(Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass)

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2017-09-04 22:03:23 +0900更新時刻: 2024-11-11 04:21:57 +0900

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