Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source
(Inフラッシュ方による広帯域近赤外光源のための中心波長1.05μmのInAs/GaAs量子ドット成長)
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Created at: 2016-05-24 17:07:27 +0900Updated at: 2024-04-02 04:06:44 +0900