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Defect dependence on depth in ion-implanted Si probed by a positron beam
(陽電子ビームによるSi中のイオン注入欠陥の深さ分布の研究)

藤浪真紀, 宮越達三, 澤田嗣郎, R.Suzuki, T.Ohdaira, AKAHANE, Takashi.

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    Fulltext and dataset(s) on Materials Data Repository (MDR)


      Created at: 2022-11-15 00:40:56 +0900 Updated at: 2022-11-15 00:40:56 +0900

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