Microstructure and interface control of GaN/MgAl<sub>2</sub>O<sub>4</sub> grown by metalorganic chemical vapor deposition: Substrate-orientation dependence | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence
(Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence)

G. He, Shigefusa F. Chichibu, T. Chikyow.

Journal of Applied Physics 110 [2] 023504. 2011.

https://doi.org/10.1063/1.3606430

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作成時刻: 2016-05-24 16:30:11 +0900更新時刻: 2024-03-31 15:59:59 +0900

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