Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source
(広帯域光源のための近接二層積層によるGaAs 基板上InAs-QD の発光長波長化)
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Created at: 2016-05-24 17:07:25 +0900 Updated at: 2026-10-08 05:27:45 +0900