HOME > Article > DetailPositive field and Temperature dependencies of critical current density in vanakium3-gallium and niobium3-aluminium(V3GaとNb3Alにおける臨界電流密度の正の磁場依存性と温度依存性)TAKEUCHI, Takao, 田川浩平, 伊藤喜久男, 小菅通雄, YUYAMA, Michinari, 松本文明, 和田仁. Advances in cryogenic Engineering 1003-1010. 2000.NIMS author(s)YUYAMA, MichinariFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-11-15 00:39:26 +0900 Updated at: 2022-11-15 00:39:26 +0900