Heteroepitaxy of GaSb on Si(111) and fabrication of HfO<sub>2</sub>/GaSb metal-oxide-semiconductor capacitors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Heteroepitaxy of GaSb on Si(111) and fabrication of HfO₂/GaSb metal-oxide-semiconductor capacitors
(Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors)

Akihiro Ohtake, Takaaki Mano, Noriyuki Miyata, Takahiro Mori, Tetsuji Yasuda.

Applied Physics Letters 104 [3] 032101. 2014.

https://doi.org/10.1063/1.4862542

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作成時刻: 2016-05-24 17:16:31 +0900 更新時刻: 2026-09-29 06:58:12 +0900

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