Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE<sub>3</sub>SbO<sub>3</sub> and RE<sub>8</sub>Sb<sub>3−δ</sub>O<sub>8</sub>, with RE = La, Sm, Gd, and Ho | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE₃SbO₃ and RE₈Sb_3−δO₈, with RE = La, Sm, Gd, and Ho
(Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3and RE8Sb3−δO8, with RE = La, Sm, Gd, and Ho)

Peng Wang, Scott Forbes, Taras Kolodiazhnyi, Kosuke Kosuda, Yurij Mozharivskyj.

Journal of the American Chemical Society 132 [25] 8795-8803. 2010.

https://doi.org/10.1021/ja1027698

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作成時刻: 2016-05-24 16:07:56 +0900 更新時刻: 2026-11-09 07:41:51 +0900

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