Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing proces

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Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
(Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing proces)

Meng-Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi.

AIP Advances 5 [1] 017116. 2015.

Open Access AIP Publishing (Publisher)

作成時刻: 2016-05-24 17:41:59 +0900 更新時刻: 2025-05-13 08:18:37 +0900