Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
(Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing proces)
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:41:59 +0900更新時刻: 2024-03-31 16:10:13 +0900