Reduction of interfacial SiO<sub>2</sub> at HfO<sub>2</sub>/Si interface with Ta<sub>2</sub>O<sub>5</sub> cap | SAMURAI, NIMS Researchers Directory Service

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Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap
(Ta2O5キャップを用いたHfO2/Si界面のSiO2の薄膜化)

Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame, Toyohiro Chikyow.

Journal of Applied Physics 114 [1] 014106. 2013.

https://doi.org/10.1063/1.4811691

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Created at: 2016-05-24 17:05:44 +0900Updated at: 2024-05-01 06:43:39 +0900

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