HOME > Article > DetailDesign of oxide-based tunnel FETs using amorphous IGZO and p-type oxide semiconductorsRyusuke Seino, Hidehiro Asai, Ichiro Takakuwa, Shutaro Asanuma, Yoshihiro Nemoto, Yuki Nishimiya, Keishi Nishio, Makoto Minohara. Journal of Applied Physics 138 [10] 105306. 2025.https://doi.org/10.1063/5.0271651 NIMS author(s)NEMOTO, YoshihiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2026-08-26 03:06:23 +0900 Updated at: 2026-09-28 05:57:37 +0900
