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出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, Liwen Sang. Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric. Applied Physics Express. 9 [12] (2016) 121002 10.7567/apex.9.121002
- Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang. Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy. Journal of Applied Physics. 120 [18] (2016) 185305 10.1063/1.4967394
- Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas. Scientific Reports. 6 [1] (2016) 10.1038/srep23683
口頭発表
- ZHANG, Kexiong, SUMIYA, Masatomo, LIAO, Meiyong, KOIDE, Yasuo, SANG, Liwen. InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas. International Workshop on Nitride Semiconductors (IWN 2016). 2016
- SANG, Liwen, ZHANG, Kexiong, SUMIYA, Masatomo, LIAO, Meiyong, KOIDE, Yasuo. PチャネルInGaN/GaN ヘテロ構造金属酸化物半導体電界効果トランジスタ. 応用物理学会春季学術講演会. 2016
