publication_type	publication_year	number	author	title	journal_title	volume_number	issue_number	start_page	end_page	doi	reported_at
Paper	2022	1	Afshan Begum, Yuanzhao Yao, Takashi Kuroda, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Yoshihiko Takeda, Kazuaki Sakoda		Journal of the Physical Society of Japan	91	8			https://doi.org/10.7566/jpsj.91.084401	2024-04-26 15:38:17 +0900
Paper	2020	1	Takuya Iwasaki, Yoshifumi Morita, Shu Nakaharai, Yutaka Wakayama, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama	Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices	Applied Physics Express	13	3	035003		https://doi.org/10.35848/1882-0786/ab790d	2024-04-26 15:38:17 +0900
Paper	2020	2	Takuya Iwasaki, Kosuke Endo, Eiichiro Watanabe, Daiju Tsuya, Yoshifumi Morita, Shu Nakaharai, Yutaka Noguchi, Yutaka Wakayama, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama	Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures	ACS Applied Materials & Interfaces	12	7	8533	8538	https://doi.org/10.1021/acsami.9b19191	2024-04-26 15:38:17 +0900
Paper	2019	1	Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Yutaka Noguchi, Yutaka Wakayama, Yoshifumi Morita, Satoshi Moriyama	Topological valley currents in bilayer graphene/hexagonal boron nitride superlattices	Applied Physics Letters	114	24	243105		https://doi.org/10.1063/1.5094456	2024-04-26 15:38:17 +0900
Paper	2018	1	Kazumasa Ishida, Nobuhiko Ozaki, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto	Non-destructive and non-contact measurement of semiconductor optical waveguide using optical coherence tomography with a visible broadband light source	Japanese Journal of Applied Physics	57	8S2	08PE03		https://doi.org/10.7567/jjap.57.08pe03	2024-04-26 15:38:17 +0900
Paper	2018	2	Katsuyosih Komatsu, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama	Observation of the quantum valley Hall state in ballistic graphene superlattices	Science Advances	4	5	eaaq0194		https://doi.org/10.1126/sciadv.aaq0194	2024-04-26 15:38:17 +0900
Paper	2018	3	J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide	Annealing effects on hydrogenated diamond NOR logic circuits	Applied Physics Letters	112	15	153501		https://doi.org/10.1063/1.5022590	2024-04-26 15:38:17 +0900
Paper	2017	1	Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide	Logic circuits with hydrogenated diamond field-effect transistors	IEEE Electron Device Letters	38	7	922	925	https://doi.org/10.1109/led.2017.2702744	2024-04-26 15:38:17 +0900
Paper	2017	2	Kanji Takehana, Yasutaka Imanaka, Eiichiro Watanabe, Hirotaka Oosato, Daiju Tsuya, Yongmin Kim, Ki-Seok An	CVDグラフェンにおける抵抗のLog T依存性	Current Applied Physics	17	4	474	478	https://doi.org/10.1016/j.cap.2017.01.002	2024-04-26 15:38:17 +0900
Paper	2016	1	Tsuyoshi Nishi, Nobuhiko Ozaki, Yoichi Oikawa, Kunio Miyaji, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto	可視光OCTによる半導体光デバイス微細加工における高分解・非破壊膜厚測定法	Japanese Journal of Applied Physics	55	8S3	08RE05		https://doi.org/10.7567/jjap.55.08re05	2024-04-26 15:38:17 +0900
Paper	2016	2	Takahiro Mori, Naruki Ninomiya, Toshitaka Kubo, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando	Characterization of effective mobility and its degradation mechanism in MoS2 MOSFETs	IEEE Transactions on Nanotechnology	15	4	651	656	https://doi.org/10.1109/tnano.2016.2570280	2024-04-26 15:38:17 +0900
Paper	2016	3	Takuma YASUDA, Nobuhiko OZAKI, Hiroshi SHIBATA, Shunsuke OHKOUCHI, Naoki IKEDA, Hirotaka OHSATO, Eiichiro WATANABE, Yoshimasa SUGIMOTO, Richard A. HOGG	多層InAs量子ドットによるガウシアン形状近赤外広帯域光源の電流駆動	IEICE Transactions on Electronics	E99.C	3	381	384	https://doi.org/10.1587/transele.e99.c.381	2024-04-26 15:38:17 +0900
Paper	2016	4	Nobuhiko Ozaki, David T. D. Childs, Jayanta Sarma, Timothy S. Roberts, Takuma Yasuda, Hiroshi Shibata, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg	OCT光源用InAs-QDと分割電極による広帯域スーパールミネッセント・ダイオード	Journal of Applied Physics	119	8	083107		https://doi.org/10.1063/1.4942640	2024-04-26 15:38:17 +0900
Paper	2015	1	Hiroshi Shibata, Nobuhiko Ozaki, Takuma Yasuda, Shunsuke Ohkouchi, Naoki Ikeda, Hirotaka Ohsato, Eiichiro Watanabe, Yoshimasa Sugimoto, Kenji Furuki, Kunio Miyaji, Richard A. Hogg	多波長InAs量子ドットSLD光源を用いたSD-OCTによる生体イメージング	Japanese Journal of Applied Physics	54	4S	04DG07		https://doi.org/10.7567/jjap.54.04dg07	2024-04-26 15:38:17 +0900
Paper	2015	2	Jiangwei Liu, Meiyong Liao, Masataka Imura, Hirotaka Oosato, Eiichiro Watanabe, Yasuo Koide	Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond	Diamond and Related Materials	54		55	58	https://doi.org/10.1016/j.diamond.2014.10.004	2024-04-26 15:38:17 +0900
Paper	2015	3	Naruki Ninomiya, Takahiro Mori, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando	Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching	Japanese Journal of Applied Physics	54	4	046502		https://doi.org/10.7567/jjap.54.046502	2024-04-26 15:38:17 +0900
Paper	2014	1	J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide	Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor	Applied Physics Letters	105	8	082110		https://doi.org/10.1063/1.4894291	2024-04-26 15:38:17 +0900
Paper	2014	2	J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide	Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material	Journal of Physics D: Applied Physics	47	24	245102		https://doi.org/10.1088/0022-3727/47/24/245102	2024-04-26 15:38:17 +0900
Paper	2014	3	Nobuhiko Ozaki, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg	発光波長制御積層型InAs量子ドット近赤外SLD	Japanese Journal of Applied Physics	53	4S	04EG10		https://doi.org/10.7567/jjap.53.04eg10	2024-04-26 15:38:17 +0900
Paper	2014	4	Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya	グラフェンにおける場を用いた束縛状態の形成	Applied Physics Letters	104	5	053108		https://doi.org/10.1063/1.4864074	2024-04-26 15:38:17 +0900
Paper	2014	5	Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Edmund Clarke, Richard A. Hogg	超広帯域近赤外光源用発光波長を制御したInAs量子ドットの集積	Nanomaterials and Nanotechnology	4		26		https://doi.org/10.5772/59315	2024-04-26 15:38:17 +0900
Paper	2013	1	J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide	Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors	Journal of Applied Physics	114	8	084108		https://doi.org/10.1063/1.4819108	2024-04-26 15:38:17 +0900
Paper	2013	2	Takahide Yamaguchi, Eiichiro Watanabe, Hirotaka Osato, Daiju Tsuya, Keita Deguchi, Tohru Watanabe, Hiroyuki Takeya, Yoshihiko Takano, Shinichiro Kurihara, Hiroshi Kawarada	Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces	Journal of the Physical Society of Japan	82	7	074718		https://doi.org/10.7566/jpsj.82.074718	2024-04-26 15:38:17 +0900
Paper	2013	3	J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide	Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate die	Applied Physics Letters	102	11	112910		https://doi.org/10.1063/1.4798289	2024-04-26 15:38:17 +0900
Paper	2013	4	Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya	ナノ構造グラフェンへの直接コンタクト素子におけるクーロンブロッケイド特性	Materials Express	3	1	92	96	https://doi.org/10.1166/mex.2013.1105	2024-04-26 15:38:17 +0900
Paper	2012	1	Y. Ishiwata, S. Suehiro, T. Kida, H. Ishii, Y. Tezuka, H. Oosato, E. Watanabe, D. Tsuya, Y. Inagaki, T. Kawae, M. Nantoh, K. Ishibashi	Spontaneous uniaxial strain and disappearance of the metal-insulator transition in monodisperse V2O3nanocrystals	Physical Review B	86	3			https://doi.org/10.1103/physrevb.86.035449	2024-04-26 15:38:17 +0900
Paper	2012	2	Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano	AlN／ダイヤモンドヘテロ構造を用いたダイヤモンドトランジスタ	Diamond and Related Materials	24		206	209	https://doi.org/10.1016/j.diamond.2012.01.020	2024-04-26 15:38:17 +0900
Paper	2012	3	Eiichiro Watanabe, Arolyn Conwill, Daiju Tsuya, Yasuo Koide	グラフェン素子における低抵抗Ti/Auオーミックコンタクトの形成	Diamond and Related Materials	24		171	174	https://doi.org/10.1016/j.diamond.2012.01.019	2024-04-26 15:38:17 +0900
Paper	2012	4	Yoichi Ishiwata, Tatsuya Shiraishi, Naoki Ito, Satoshi Suehiro, Tetsuya Kida, Hirofumi Ishii, Yasuhisa Tezuka, Yuji Inagaki, Tatsuya Kawae, Hirotaka Oosato, Eiichiro Watanabe, Daiju Tsuya, Masashi Nantoh, Koji Ishibashi	Metal-insulator transition sustained by Cr-doping in V2O3 nanocrystals	Applied Physics Letters	100	4	043103		https://doi.org/10.1063/1.3679396	2024-04-26 15:38:17 +0900
Paper	2011	1	Hikari Tomori, Akinobu Kanda, Hidenori Goto, Youiti Ootuka, Kazuhito Tsukagoshi, Satoshi Moriyama, Eiichiro Watanabe, Daiju Tsuya	Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars	Applied Physics Express	4	7	075102		https://doi.org/10.1143/apex.4.075102	2024-04-26 15:38:17 +0900
Paper	2011	2	Xi Yang, Mingsheng Xu, Weiming Qiu, Xiaoqiang Chen, Meng Deng, Jinglin Zhang, Hideo Iwai, Eiichiro Watanabe, Hongzheng Chen	Graphene uniformly decorated with gold nanodots: in situ synthesis, enhanced dispersibility and applications	Journal of Materials Chemistry	21	22	8096		https://doi.org/10.1039/c1jm10697j	2024-04-26 15:38:17 +0900
Paper	2011	3	Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide, Hiroshi Amano	AlN／ダイヤモンドヘテロ構造を用いたダイヤモンド電界効果トランジスタ	physica status solidi (RRL) - Rapid Research Letters	5	3	125	127	https://doi.org/10.1002/pssr.201105024	2024-04-26 15:38:17 +0900
Paper	2011	4	Mingsheng Xu, Daisuke Fujita, Keisuke Sagisaka, Eiichiro Watanabe, Nobutaka Hanagata	Production of Extended Single-Layer Graphene	ACS Nano	5	2	1522	1528	https://doi.org/10.1021/nn103428k	2024-04-26 15:38:17 +0900
Paper	2011	5	S. Kim, R. Ishiguro, M. Kamio, Y. Doda, E. Watanabe, D. Tsuya, K. Shibata, K. Hirakawa, H. Takayanagi	π junction transition in InAs self-assembled quantum dot coupled with SQUID	Applied Physics Letters	98	6	063106		https://doi.org/10.1063/1.3552715	2024-04-26 15:38:17 +0900
Paper	2010	1	Meiyong Liao, Shunichi Hishita, Eiichiro Watanabe, Satoshi Koizumi, Yasuo Koide	Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches	Advanced Materials	22	47	5393	5397	https://doi.org/10.1002/adma.201003074	2024-04-26 15:38:17 +0900
Paper	2010	2	Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu, Koji Ishibashi	グラフェン量子ドットデバイスの作製	Science and Technology of Advanced Materials	11	5	054601		https://doi.org/10.1088/1468-6996/11/5/054601	2024-04-26 15:38:17 +0900
Paper	2009	1	Satoshi Moriyama, Daiju Tsuya, Eiichiro Watanabe, Shinya Uji, Maki Shimizu, Takahiro Mori, Tomohiro Yamaguchi, Koji Ishibashi	グラフェン系2次元半金属を用いた2重結合量子ドット素子	Nano Letters	9	8	2891	2896	https://doi.org/10.1021/nl9011535	2024-04-26 15:38:17 +0900