publication_type	publication_year	number	author	title	doi	reported_at
Proceeding	2019	1	江藤 大貴, 土屋 敬志, 北川 勇気, 髙栁 真, 鶴岡 徹, T. Higuchi, 寺部 一弥			2024-04-26 13:06:29 +0900
Proceeding	2017	1	Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka, Song-Ju Kim, Masakazu Aono	Current progress of solid state ionics on information and communication device technology	https://doi.org/10.23919/iwjt.2017.7966508	2024-04-26 13:06:29 +0900
Proceeding	2017	2	Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka, Song-Ju Kim, Masakazu Aono	Current progress of solid state ionics on information and communication device technology		2024-04-26 13:06:29 +0900
Proceeding	2015	1	Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono	Nanosecond Fast Switching Processes Observed in Gapless-Type, Ta 2 O 5 –Based Atomic Switches	https://doi.org/10.1557/opl.2015.93	2024-04-26 13:06:29 +0900
Proceeding	2015	2	 Arramel, Tsuyoshi Hasegawa, Tohru Tsuruoka, Masakazu Aono	Topographic and Electronic Properties of 3,4,9,10-Perylene TetraCarboxylic Dianhydride (PTCDA) on Indium Tin Oxide (ITO) Surface	https://doi.org/10.4028/www.scientific.net/amr.1112.110	2024-04-26 13:06:29 +0900
Proceeding	2014	1	TSURUOKA, Tohru, HASEGAWA, Tsuyoshi, AONO, Masakazu	Synaptic plasticity and memristive behavior operated by atomic switches		2024-04-26 13:06:29 +0900
Proceeding	2014	2	鶴岡 徹, 長谷川 剛	酸化物ナノ薄膜を用いた原子スイッチ型抵抗変化メモリーとその応用		2024-04-26 13:06:29 +0900
Proceeding	2011	1	TSURUOKA, Tohru, HASEGAWA, Tsuyoshi, TERABE, Kazuya, AONO, Masakazu	抵抗変化メモリ（ReRAM）の現状と展望：絶縁性ナノ薄膜型原子スイッチを中心として		2024-04-26 13:06:29 +0900
Proceeding	2009	1	WU, Shouming, TSURUOKA, Tohru, TERABE, Kazuya, HASEGAWA, Tsuyoshi, HILL, Jonathan, ARIGA, Katsuhiko, AONO, Masakazu			2024-04-26 13:06:29 +0900
Proceeding	2008	1	呉 守明, 鶴岡 徹, 長谷川 剛, 葛 子義, 早川 晃鏡, 柿本 雅明	主鎖にシロキサン基を有する高蛍光可溶ポリイミド		2024-04-26 13:06:29 +0900