- 退職
- 2023年3月退職
[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [特許]
論文 TSV
2022
- Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN. ACS Applied Electronic Materials. 4 [9] (2022) 4719-4723 10.1021/acsaelm.2c00912
- 山下 良之, タン ジンミン. Si ドープGaN(0001)におけるドーパントの活性サイト・ 不活性サイトの化学状態解明. 表面と真空. (2022) 309-314 10.1380/vss.65.309
2021
- Jingmin Tang, Yoshiyuki Yamashita. Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN. ACS Applied Electronic Materials. 3 [10] (2021) 4618-4622 10.1021/acsaelm.1c00766
書籍 TSV
会議録 TSV
口頭発表 TSV
2022
- YAMASHITA, Yoshiyuki, TANG, Jingmin. Photoelectron Holographic Study of Atomic Structure and Chemical State for Active Dopant Site in Mg-Doped GaN (0001). 14th International Symposium on Atomic Level Characterizations for New Materials and Drvices '22 (ALC '22). 2022
- YAMASHITA, Yoshiyuki, TANG, Jingmin. Atomic Structures and Chemical states of Active and Inactive Dopant Sites in Si-doped GaN. IVC-22 (THE 22ND INTERNATIONAL VACUUM CONGRESS). 2022
2021
- 山下 良之, タン ジンミン. SiドープGaN中ドーパント活性サイトの化学状態・原子構造 . 2021年 日本表面真空学会 学術講演会. 2021