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SEKIGUCHI, Takashi
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305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
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Research papers TSV

2018
  1. 揚村 寿英, 関口 隆史. Collection efficiency and acceptance maps of electron detectors for understanding signal detection on modern scanning electron microscopy. Microscopy. [1] (2018) 18-29 10.1093/jmicro/dfx124
  2. Wei Yi, Jun Chen, Shun Ito, Koji Nakazato, Takashi Kimura, Takashi Sekiguchi, Kozo Fujiwara. Investigation of Si Dendrites by Electron-Beam-Induced Current. Crystals. 8 [8] (2018) 317 10.3390/cryst8080317
  3. Hirofumi Matsuhata, Takashi Sekiguchi. Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC. Philosophical Magazine. 98 [10] (2018) 878-898 10.1080/14786435.2017.1418540
  4. Toshihide Agemura, Takashi Kimura, Takashi Sekiguchi. Development of a fountain detector for spectroscopy of secondary electrons in scanning electron microscopy. Japanese Journal of Applied Physics. 57 [4] (2018) 046701 10.7567/jjap.57.046701
  5. Hiroyo Segawa, Yujin Cho, Takashi Sekiguchi, Naoto Hirosaki, Kenzo Deguchi, Shinobu Ohki, Tadashi Shimizu. Reaction of europium-doped α-SiAlON phosphors with sodium borosilicate glass matrices. Journal of the European Ceramic Society. 38 [2] (2018) 735-741 10.1016/j.jeurceramsoc.2017.09.033
  6. Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda. Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy. Applied Physics Express. 11 [2] (2018) 021002 10.7567/apex.11.021002
2017
  1. Yujie Zhao, Rong-Jun Xie, Benjamin Dierre, Takashi Takeda, Takashi Sekiguchi, Naoto Hirosaki, Le Wang. Enhanced cathodoluminescence of green β-sialon:Eu2+ phosphor by In2O3 coating. Journal of Alloys and Compounds. 727 (2017) 1110-1114 10.1016/j.jallcom.2017.08.255
  2. Liang-Jun Yin, Benjamin Dierre, Takashi Sekiguchi, J. van Ommen, Hubertus Hintzen, Yujin Cho. Transition of Emission Colours as a Consequence of Heat-Treatment of Carbon Coated Ce3+-Doped YAG Phosphors. Materials. 10 [10] (2017) 1180 10.3390/ma10101180
  3. Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes. Applied Physics Letters. 111 [12] (2017) 122102 10.1063/1.4994627
  4. Eita Tochigi, Hirofumi Matsuhata, Hirotaka Yamaguchi, Takashi Sekiguchi, Hajime Okumura, Yuichi Ikuhara. Investigation of V-shaped extended defects in a 4H–SiC epitaxial film. Philosophical Magazine. 97 [9] (2017) 657-670 10.1080/14786435.2016.1275869
  5. Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates. APL Materials. 5 [1] (2017) 016105 10.1063/1.4974935
2016
  1. Hirofumi Matsuhata, Naoyuki Sugiyama, Bin Chen, Tamotsu Yamashita, Tetsuo Hatakeyama, Takashi Sekiguchi. Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy. Microscopy. (2016) 10.1093/jmicro/dfw108
  2. Hirofumi Matsuhata, Naoyuki Sugiyama, Bin Chen, Tamotsu Yamashita, Tetsuo Hatakeyama, Takashi Sekiguchi. Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy. Microscopy. (2016) 10.1093/jmicro/dfw107
  3. Kentaro Watanabe, Takahiro Nagata, Seungjun Oh, Yutaka Wakayama, Takashi Sekiguchi, János Volk, Yoshiaki Nakamura. Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods. Nature Communications. 7 [1] (2016) 10.1038/ncomms10609
  4. Yujin Cho, Benjamin Dierre, Takashi Sekiguchi, Takayuki Suehiro, Kohsei Takahashi, Takashi Takeda, Rong-Jun Xie, Yoshinobu Yamamoto, Naoto Hirosaki. Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors. Journal of Visualized Experiments. [117] (2016) 10.3791/54249
  5. Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito. Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching. Superlattices and Microstructures. 99 (2016) 182-185 10.1016/j.spmi.2016.03.013
  6. Xianjia Luo, Ronit R. Prakash, Jun Chen, Karolin Jiptner, Takashi Sekiguchi. Effect of Σ3 generation on random grain boundaries in multicrystalline silicon. Superlattices and Microstructures. 99 (2016) 136-139 10.1016/j.spmi.2016.03.032
  7. Yujin Cho, Takashi Sekiguchi, Takashi Kimura, Hideo Iwai. Imaging and spectroscopy of secondary electrons from AlN and β-SiAlON ceramics using fountain detector. Superlattices and Microstructures. 99 (2016) 41-44 10.1016/j.spmi.2016.03.019
  8. SEKIGUCHI, Takashi, KUMAGAI, Kazuhiro. SEM象の不思議―弱い電子と帯電が作り出すコントラスト. 顕微鏡. 51 [2] (2016) 94-100
  9. Shuxing Li, Qiangqiang Zhu, Le Wang, Daiming Tang, Yujin Cho, Xuejian Liu, Naoto Hirosaki, Toshiyuki Nishimura, Takashi Sekiguchi, Zhengren Huang, Rong-Jun Xie. CaAlSiN3:Eu2+ translucent ceramic: a promising robust and efficient red color converter for solid state laser displays and lighting. Journal of Materials Chemistry C. 4 [35] (2016) 8197-8205 10.1039/c6tc02518h
  10. Stelian ARJOCA, Encarnación G. VÍLLORA, Daisuke INOMATA, Yusuke ARAI, Yujin CHO, Takashi SEKIGUCHI, Kiyoshi SHIMAMURA. High homogeneity, thermal stability and external quantum efficiency of Ce:YAG single-crystal powder phosphors for white LEDs. Journal of the Ceramic Society of Japan. 124 [5] (2016) 574-578 10.2109/jcersj2.15303
  11. Chenning Zhang, Tetsuo Uchikoshi, Rong-Jun Xie, Lihong Liu, Yujin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Prevention of thermal- and moisture-induced degradation of the photoluminescence properties of the Sr2Si5N8:Eu2+ red phosphor by thermal post-treatment in N2–H2. Physical Chemistry Chemical Physics. 18 [18] (2016) 12494-12504 10.1039/c6cp01102k
  12. SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. 946 (2016) 343-373
  13. Takuto Kojima, Tomihisa Tachibana, Yoshio Ohshita, Ronit R. Prakash, Takashi Sekiguchi, Masafumi Yamaguchi. Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method. Journal of Applied Physics. 119 [6] (2016) 065302 10.1063/1.4940709
  14. Yujin Cho, Benjamin Dierre, Naoki Fukata, Naoto Hirosaki, Kazuhiro Marumoto, Donghyun Son, Kohsei Takahashi, Takashi Takeda, Takashi Sekiguchi. Defects and luminescence control of AlN ceramic by Si-doping. Scripta Materialia. 110 (2016) 109-112 10.1016/j.scriptamat.2015.08.013
  15. MUROMACHI, Eiji, FUJITA, Takahiro, FUJITA, Daisuke, MURAKAWA, Kensaku, YAMAUCHI, Yasushi, MITSUISHI, Kazutaka, KAWAKITA, Mamiko, IWAI, Hideo, OHKUBO, Tadakatsu, KAWAKITA, Jin, KITAZAWA, Hideaki, KIMOTO, Koji, CUSTANCE, Oscar, KURAHASHI, Mitsunori, GOTO, Atsushi, SAKAGUCHI, Isao, SAKATA, Osami, SAKURAI, Kenji, ZHANG, Han, SHINOHARA, Tadashi, SHIMIZU, Tadashi, SHIMIZU, Tomoko, SHIWA, Mitsuharu, SUZUKI, Taku, SEKIGUCHI, Takashi, TANSHO, Masataka, CHIKYOW, Toyohiro, NAGATA, Takahiro, NOGUCHI, Hidenori, HASHI, Kenjiro, HONO, Kazuhiro, YAGYU, Shinjiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Genki, YOSHIKAWA, Hideki, WATANABE, Ken, WATANABE, Makoto. 材料イノベーションを加速する先進計測テクノロジーの現状と動向. 調査分析室レポート. (2016) 73-89
  16. MUROMACHI, Eiji, FUJITA, Takahiro, FUJITA, Daisuke, MURAKAWA, Kensaku, YAMAUCHI, Yasushi, MITSUISHI, Kazutaka, KAWAKITA, Mamiko, IWAI, Hideo, OHKUBO, Tadakatsu, KAWAKITA, Jin, KITAZAWA, Hideaki, KIMOTO, Koji, CUSTANCE, Oscar, KURAHASHI, Mitsunori, GOTO, Atsushi, SAKAGUCHI, Isao, SAKATA, Osami, SAKURAI, Kenji, ZHANG, Han, SHINOHARA, Tadashi, SHIMIZU, Tadashi, SHIMIZU, Tomoko, SHIWA, Mitsuharu, SUZUKI, Taku, SEKIGUCHI, Takashi, TANSHO, Masataka, CHIKYOW, Toyohiro, NAGATA, Takahiro, NOGUCHI, Hidenori, HASHI, Kenjiro, HONO, Kazuhiro, YAGYU, Shinjiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Genki, YOSHIKAWA, Hideki, YOSHITAKE, Michiko, WATANABE, Ken, WATANABE, Makoto. 材料イノベーションを加速する先進計測テクノロジーの現状と動向 物質・材料研究のための先進計測テクノロジー. 調査分析室レポートNIMS-RAO-FY2016-3 [ISBN] 978-4-9900563-7-7. 1 (2016) 42-51
2015
  1. Hirofumi Matsuhata, Hirotaka Yamaguchi, Takashi Sekiguchi, Bin Chen, Masayuki Sasaki, Toshiyuki Ohno, Takuma Suzuki, Tetsuo Hatakeyama, Takashi Tsuji, Yoshiyuki Yonezawa, Kazuo Arai. Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-ray Topography. IEEJ Transactions on Fundamentals and Materials. 135 [12] (2015) 768-779 10.1541/ieejfms.135.768
  2. Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada. Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique. Solid State Phenomena. 242 (2015) 35-40 10.4028/www.scientific.net/ssp.242.35
  3. Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Orientation Dependency of Dislocation Generation in Si Growth Process. Solid State Phenomena. 242 (2015) 15-20 10.4028/www.scientific.net/ssp.242.15
  4. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 50 cm Size Seed Cast Si Ingot Growth and its Characterization. Solid State Phenomena. 242 (2015) 30-34 10.4028/www.scientific.net/ssp.242.30
  5. Takayuki Hashimoto, Hisanori Yamane, Takahiro Yamada, Takashi Sekiguchi. Synthesis and Crystal Structures of BaLaSi2 with cis–trans Si Chains and Ba5LaSi6 with Pentagonal Si Rings. Inorganic Chemistry. 54 [18] (2015) 9188-9194 10.1021/acs.inorgchem.5b01604
  6. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. physica status solidi (c). 12 [8] (2015) 1094-1098 10.1002/pssc.201400230
  7. Takuto Kojima, Tomihisa Tachibana, Yoshio Ohshita, Ronit R. Prakash, Takashi Sekiguchi, Masafumi Yamaguchi. Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method. Japanese Journal of Applied Physics. 54 [8S1] (2015) 08KD16 10.7567/jjap.54.08kd16
  8. Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Control of extended defects in cast multicrystalline silicon using polycrystalline template. physica status solidi (c). 12 [8] (2015) 1099-1102 10.1002/pssc.201400299
  9. Takashi Sekiguchi, Hideo Iwai. Low-pass secondary electron detector for outlens scanning electron microscopy. Japanese Journal of Applied Physics. 54 [8] (2015) 088001 10.7567/jjap.54.088001
  10. Chen Ning Zhang, Tetsuo Uchikoshi, Li Hong Liu, Benjamin Dierre, Yu Jin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Textured Beta-Sialon:Eu<sup>2+</sup> Phosphor Deposits Fabricated by Electrophoretic Deposition (EPD) Process within a Strong Magnetic Field: Preparation Process and Photoluminescence (PL) Properties Depending on Orientation. Key Engineering Materials. 654 (2015) 268-273 10.4028/www.scientific.net/kem.654.268
  11. Chenning Zhang, Tetsuo Uchikoshi, Rong-Jun Xie, Lihong Liu, Yujin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Reduced thermal degradation of the red-emitting Sr2Si5N8:Eu2+ phosphor via thermal treatment in nitrogen. Journal of Materials Chemistry C. 3 [29] (2015) 7642-7651 10.1039/c5tc01575h
  12. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto, SEKIGUCHI, Takashi, JIPTNER, Karolin, PRAKASH, Ronit Roneel, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 12 [8] (2015) 1094-1098
  13. Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura, Shin Sugawara, Takashi Sekiguchi. Advantage in solar cell efficiency of high-quality seed cast mono Si ingot. Applied Physics Express. 8 [6] (2015) 062301 10.7567/apex.8.062301
  14. Lihong Liu, Le Wang, Chenning Zhang, Yujin Cho, Benjamin Dierre, Naoto Hirosaki, Takashi Sekiguchi, Rong-Jun Xie. Strong Energy-Transfer-Induced Enhancement of Luminescence Efficiency of Eu2+- and Mn2+-Codoped Gamma-AlON for Near-UV-LED-Pumped Solid State Lighting. Inorganic Chemistry. 54 [11] (2015) 5556-5565 10.1021/acs.inorgchem.5b00683
  15. Fei Liu, Xiaoshu Mo, Haibo Gan, Tongyi Guo, Xuebin Wang, Bin Chen, Jun Chen, Shaozhi Deng, Ningsheng Xu, Takashi Sekiguchi, Dmitri Golberg, Yoshio Bando. Cheap, Gram-Scale Fabrication of BN Nanosheets via Substitution Reaction of Graphite Powders and Their Use for Mechanical Reinforcement of Polymers. Scientific Reports. 4 [1] (2015) 10.1038/srep04211
  16. Yao Yin, Huabin Sun, Liwen Sang, Peng Chen, Youdou Zheng, Benjamin Dierre, Masatomo Sumiya, Yi Shi, Takashi Sekiguchi. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures. AIP Advances. 5 [5] (2015) 057129 10.1063/1.4921207
  17. T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake. Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy. Journal of Crystal Growth. 416 (2015) 142-147 10.1016/j.jcrysgro.2015.01.034
  18. Kohsei Takahashi, Benjamin Dierre, Yujin Cho, Takashi Sekiguchi, Rong-Jun Xie, Naoto Hirosaki. Microanalysis of Calcium Codoped LaAl(Si6−zAlz)(N10−zOz) (z~1): Ce3+Blue Phosphor. Journal of the American Ceramic Society. 98 [4] (2015) 1253-1258 10.1111/jace.13470
  19. Kentaro Watanabe, Takahiro Nagata, Yutaka Wakayama, Takashi Sekiguchi, Róbert Erdélyi, János Volk. Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy. ACS Nano. 9 [3] (2015) 2989-3001 10.1021/nn507159u
  20. Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito, Wei Yi, Atsushi Ogura. Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy. Applied Physics Letters. 106 [10] (2015) 102109 10.1063/1.4915298
  21. Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds. Applied Physics Express. 8 [3] (2015) 035502 10.7567/apex.8.035502
  22. Jie Zhu, Le Wang, Tianliang Zhou, Yujin Cho, Takayuki Suehiro, Takashi Takeda, Ming Lu, Takashi Sekiguchi, Naoto Hirosaki, Rong-Jun Xie. Moisture-induced degradation and its mechanism of (Sr,Ca)AlSiN3:Eu2+, a red-color-converter for solid state lighting. Journal of Materials Chemistry C. 3 [13] (2015) 3181-3188 10.1039/c4tc02824d
2014
  1. Karolin Jiptner, Bing Gao, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Koichi Kakimoto, Takashi Sekiguchi. Thermal stress induced dislocation distribution in directional solidification of Si for PV application. Journal of Crystal Growth. 408 (2014) 19-24 10.1016/j.jcrysgro.2014.09.017
  2. Yujin Cho, Benjamin Dierre, Takashi Takeda, Kohsei Takahashi, Naoto Hirosaki, Takashi Sekiguchi. Influence of Si on the particle growth of AlN ceramics. Applied Physics Express. 7 [11] (2014) 115503 10.7567/apex.7.115503
  3. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi. Crystal growth of 50cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth. 401 (2014) 133-136 10.1016/j.jcrysgro.2014.03.016
  4. Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto. Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal. Journal of Crystal Growth. 401 (2014) 717-719 10.1016/j.jcrysgro.2014.01.067
  5. Bin Chen, Jun Chen, Yuanzhao Yao, Takashi Sekiguchi, Hirofumi Matsuhata, Hajime Okumura. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC. Applied Physics Letters. 105 [4] (2014) 042104 10.1063/1.4891834
  6. Yukari Ishikawa, Yong-Zhao Yao, Yoshihiro Sugawara, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Benjamin Dierre, Kentaro Watanabe, Takashi Sekiguchi. Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining. Japanese Journal of Applied Physics. 53 [7] (2014) 071301 10.7567/jjap.53.071301
  7. Hirofumi Matsuhata, Hirotaka Yamaguchi, Tamotsu Yamashita, Toshiaki Tanaka, Bin Chen, Takashi Sekiguchi. Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography. Philosophical Magazine. 94 [15] (2014) 1674-1685 10.1080/14786435.2014.894646
  8. Bin Chen, Takashi Sekiguchi, Hirofumi Matsuhata, Takasumi Ohyanagi, Akimasa Kinoshita, Hajime Okumura. Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization. Japanese Journal of Applied Physics. 53 [5S1] (2014) 05FG01 10.7567/jjap.53.05fg01
  9. Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi. Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique. Microscopy. 63 [2] (2014) 161-166 10.1093/jmicro/dft050
  10. Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura. Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application. Acta Physica Polonica A. 125 [4] (2014) 991-993 10.12693/aphyspola.125.991
  11. Liwen Sang, Meiyong Liao, Qifeng Liang, Masaki Takeguchi, Benjamin Dierre, Bo Shen, Takashi Sekiguchi, Yasuo Koide, Masatomo Sumiya. A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure. Advanced Materials. 26 [9] (2014) 1414-1420 10.1002/adma.201304335
  12. Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi. Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots. Acta Physica Polonica A. 125 [4] (2014) 1024-1026 10.12693/aphyspola.125.1024
  13. Xiao-Jun Wang, Rong-Jun Xie, Benjamin Dierre, Takashi Takeda, Takayuki Suehiro, Naoto Hirosaki, Takashi Sekiguchi, Huili Li, Zhuo Sun. A novel and high brightness AlN:Mn2+ red phosphor for field emission displays. Dalton Transactions. 43 [16] (2014) 6120 10.1039/c3dt53532k
  14. Zaien Wang, Baodan Liu, Fang Yuan, Tao Hu, Guifeng Zhang, Benjamin Dierre, Naoto Hirosaki, Takashi Sekiguchi, Xin Jiang. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires. Journal of Luminescence. 145 (2014) 208-212 10.1016/j.jlumin.2013.07.038
2013
  1. Fang Yuan, Baodan Liu, Zaien Wang, Bing Yang, Yao Yin, Benjamin Dierre, Takashi Sekiguchi, Guifeng Zhang, Xin Jiang. Synthesis, Microstructure, and Cathodoluminescence of [0001]-Oriented GaN Nanorods Grown on Conductive Graphite Substrate. ACS Applied Materials & Interfaces. 5 [22] (2013) 12066-12072 10.1021/am403876e
  2. Lihong Liu, Rong-Jun Xie, Naoto Hirosaki, Benjamin Dierre, Takashi Sekiguchi. Luminescence properties of a blue-emitting phosphor: (Sr1−xEux)Si9Al19ON31 (0<x≤1). Journal of Solid State Chemistry. 207 (2013) 49-54 10.1016/j.jssc.2013.09.009
  3. Baodan Liu, Zaien Wang, Fang Yuan, Dierre Benjamin, Takashi Sekiguchi, Xin Jiang. Crystallography and cathodoluminescence of pyramid-like GaN nanorods epitaxially grown on a sapphire substrate. RSC Advances. 3 [45] (2013) 22914 10.1039/c3ra44371j
  4. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method. Solid State Phenomena. 205-206 (2013) 94-99 10.4028/www.scientific.net/ssp.205-206.94
  5. Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 10 cm Diameter Mono Cast Si Growth and its Characterization. Solid State Phenomena. 205-206 (2013) 89-93 10.4028/www.scientific.net/ssp.205-206.89
  6. Masakazu Baba, Sadahiro Tsurekawa, Kentaro Watanabe, W. Du, Kaoru Toko, Kosuke O. Hara, Noritaka Usami, Takashi Sekiguchi, Takashi Suemasu. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy. Applied Physics Letters. 103 [14] (2013) 142113 10.1063/1.4824335
  7. Baodan Liu, Yoshio Bando, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg, Xin Jiang. Solid Solution, Phase Separation, and Cathodoluminescence of GaP–ZnS Nanostructures. ACS Applied Materials & Interfaces. 5 [18] (2013) 9199-9204 10.1021/am4027949
  8. Hui Liu, Linfeng Hu, Kentaro Watanabe, Xinhua Hu, Benjamin Dierre, Bongsoo Kim, Takashi Sekiguchi, Xiaosheng Fang. Cathodoluminescence Modulation of ZnS Nanostructures by Morphology, Doping, and Temperature. Advanced Functional Materials. 23 [29] (2013) 3701-3709 10.1002/adfm.201203711
  9. Jianyong Li, Ronit Roneel Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Atsushi Ogura, Takashi Sekiguchi. Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells. Journal of Crystal Growth. 377 (2013) 37-42 10.1016/j.jcrysgro.2013.03.051
  10. Tao Hu, Baodan Liu, Fang Yuan, Zaien Wang, Nan Huang, Guifeng Zhang, Benjamin Dierre, Naoto Hirosaki, Takashi Sekiguchi, Yoshio Bando, Dmitri Golberg, Xin Jiang. Triangular ZnO Nanosheets: Synthesis, Crystallography and Cathodoluminescence. Journal of Nanoscience and Nanotechnology. 13 [8] (2013) 5744-5749 10.1166/jnn.2013.7563
  11. K. Kumagai, T. Sekiguchi. Estimation of Energy Acceptance of SE Detectors in Scanning Electron Microscopy. Microscopy and Microanalysis. 19 [S2] (2013) 1196-1197 10.1017/s1431927613007976
  12. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Effect of Crystallinity on Residual Strain Distribution in Cast-Grown Si. Japanese Journal of Applied Physics. 52 [6R] (2013) 065501 10.7567/jjap.52.065501
  13. B. Dierre, X. M. Zhang, N. Fukata, T. Sekiguchi, T. Suehiro, T. Takeda, R. J. Xie, N. Hirosaki. Growth Temperature Influence on the Luminescence of Eu,Si-Codoped AlN Phosphors. ECS Journal of Solid State Science and Technology. 2 [7] (2013) R126-R130 10.1149/2.006307jss
  14. Benjamin Dierre, Takashi Takeda, Takashi Sekiguchi, Takayuki Suehiro, Kohsei Takahashi, Yoshinobu Yamamoto, Rong-Jun Xie, Naoto Hirosaki. Local analysis of Eu2+emission in CaAlSiN3. Science and Technology of Advanced Materials. 14 [6] (2013) 064201 10.1088/1468-6996/14/6/064201
  15. F. Fabbri, N. Armani, B. Dierre, T. Sekiguchi, J.L. Plaza, O. Martinez, G. Salviati. Ion irradiation induced formation of CdO microcrystals on CdTe surfaces. Materials Letters. 92 (2013) 397-400 10.1016/j.matlet.2012.11.020
  16. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Evaluation of residual strain in directional solidified mono-Si ingots. physica status solidi (c). 10 [1] (2013) 141-145 10.1002/pssc.201200884
2012
  1. J.Q. Xu, H. Onodera, T. Sekiguchi, D. Golberg, Y. Bando, T. Mori. Fabrication, characterization, cathodoluminescence, and field-emission properties of silica (SiO2) nanostructures. Materials Characterization. 73 (2012) 81-88 10.1016/j.matchar.2012.08.001
  2. Yongzhao YAO, Takashi SEKIGUCHI, Takeshi OHGAKI, Yutaka ADACHI, Naoki OHASHI. Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy. Journal of the Ceramic Society of Japan. 120 [1407] (2012) 513-519 10.2109/jcersj2.120.513
  3. Naoki Fukata, Masanori Mitome, Takashi Sekiguchi, Yoshio Bando, Melanie Kirkham, Jung-Il Hong, Zhong Lin Wang, Robert L. Snyder. Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core–Shell Nanowires. ACS Nano. 6 [10] (2012) 8887-8895 10.1021/nn302881w
  4. Xuebin Wang, Amir Pakdel, Chunyi Zhi, Kentaro Watanabe, Takashi Sekiguchi, Dmitri Golberg, Yoshio Bando. High-yield boron nitride nanosheets from ‘chemical blowing’: towards practical applications in polymer composites. Journal of Physics: Condensed Matter. 24 [31] (2012) 314205 10.1088/0953-8984/24/31/314205
  5. John B. Gruber, Ulrich Vetter, Gary W. Burdick, Zackery D. Fleischman, Larry D. Merkle, Takashi Taniguchi, Yuan Xiaoli, Takashi Sekiguchi, Daniel Jürgens, Hans Hofsäss. Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride. Optical Materials Express. 2 [9] (2012) 1186 10.1364/ome.2.001186
  6. Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura. Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique. Materials Science Forum. 725 (2012) 133-136 10.4028/www.scientific.net/msf.725.133
  7. W. Lee, H.J. Lee, S.H. Park, K. Watanabe, K. Kumagai, T. Yao, J.H. Chang, T. Sekiguchi. Cross sectional CL study of the growth and annihilation of pit type defects in HVPE grown (0001) thick GaN. Journal of Crystal Growth. 351 [1] (2012) 83-87 10.1016/j.jcrysgro.2012.04.016
  8. Karolin Jiptner, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Takashi Sekiguchi. Effect of Si<sub>3</sub>N<sub>4</sub> Coating on Strain and Fracture of Si Ingots. Materials Science Forum. 725 (2012) 247-250 10.4028/www.scientific.net/msf.725.247
  9. Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe. Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction. Materials Science Forum. 725 (2012) 153-156 10.4028/www.scientific.net/msf.725.153
  10. Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi. Structural Study of Small Angle Grain Boundaries in Multicrystalline Si. Materials Science Forum. 725 (2012) 157-160 10.4028/www.scientific.net/msf.725.157
  11. Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si. Materials Science Forum. 725 (2012) 123-128 10.4028/www.scientific.net/msf.725.123
  12. Michio Tajima, Yasuaki Iwata, Futoshi Okayama, Hiroyuki Toyota, Hisashi Onodera, Takashi Sekiguchi. Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si. Journal of Applied Physics. 111 [11] (2012) 113523 10.1063/1.4728194
  13. Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Akimasa Kinoshita, Kyouichi Ichinoseki, Hajime Okumura. Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC. Applied Physics Letters. 100 [13] (2012) 132108 10.1063/1.3700963
  14. Filippo Fabbri, Francesca Rossi, Giovanni Attolini, Giancarlo Salviati, Benjamin Dierre, Takashi Sekiguchi, Naoki Fukata. Luminescence properties of SiC/SiO2 core–shell nanowires with different radial structure. Materials Letters. 71 (2012) 137-140 10.1016/j.matlet.2011.12.059
  15. Secondary electron image formation of a freestanding α-Si3N4nanobelt. Journal of Applied Physics. 111 [5] (2012) 054316 10.1063/1.3692972
  16. W. Lee, K. Watanabe, K. Kumagai, S. Park, H. Lee, T. Yao, J. Chang, T. Sekiguchi. Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films. Journal of Electron Microscopy. 61 [1] (2012) 25-30 10.1093/jmicro/dfr093
  17. Amir Pakdel, Xuebin Wang, Chunyi Zhi, Yoshio Bando, Kentaro Watanabe, Takashi Sekiguchi, Tomonobu Nakayama, Dmitri Golberg. Facile synthesis of vertically aligned hexagonal boron nitride nanosheets hybridized with graphitic domains. Journal of Materials Chemistry. 22 [11] (2012) 4818 10.1039/c2jm15109j
  18. Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Kyouichi Ichinoseki, Hajime Okumura. Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization. Acta Materialia. 60 [1] (2012) 51-58 10.1016/j.actamat.2011.09.010
2011
  1. Yuji Masubuchi, Ryohei Yamaoka, Teruki Motohashi, Kazuhiko Kirihara, Woong Lee, Kentaro Watanabe, Takashi Sekiguchi, Shinichi Kikkawa. Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals. Journal of Crystal Growth. 337 [1] (2011) 87-92 10.1016/j.jcrysgro.2011.10.008
  2. Rong-Jun Xie, Hirosaki Naoto, Benjamin Dierre, Takahashi Takeda, Takahashi Sekiguchi. Eu2+-doped AlN—SiC solid-solution phosphors: Synthesis and cathodoluminescence properties. Journal of the Society for Information Display. 19 [9] (2011) 627 10.1889/jsid19.9.627
  3. Sebastien Cueff, Christophe Labbé, Kentaro Watanabe, Benjamin Dierre, Takashi Sekiguchi, Richard Rizk. Nature and Role of Various Si-Based Sensitizers for Er<sup>3+</sup> Ions in Silicon-Rich Silicon Oxide Thin Films. Advanced Materials Research. 324 (2011) 81-84 10.4028/www.scientific.net/amr.324.81
  4. Xiaoxiong Xu, Kazunori Takada, Katsutoshi Fukuda, Tsuyoshi Ohnishi, Kosho Akatsuka, Minoru Osada, Bui Thi Hang, Kazuhiro Kumagai, Takashi Sekiguchi, Takayoshi Sasaki. Tantalum oxide nanomesh as self-standing one nanometre thick electrolyte. Energy & Environmental Science. 4 [9] (2011) 3509 10.1039/c1ee01389k
  5. SEKIGUCHI, Takashi, WATANABE, Kentaro. カソードルミネセンス分析. ぶんせき. 2011 [7] (2011) 411-415
  6. Keiichi Akutsu, Hideki Kawakami, Mitsushi Suzuno, Takashi Yaguchi, Karolin Jiptner, Jun Chen, Takashi Sekiguchi, Teruhisa Ootsuka, Takashi Suemasu. Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy. Journal of Applied Physics. 109 [12] (2011) 123502 10.1063/1.3596565
  7. Yang Huang, Jing Lin, Chengchun Tang, Yoshio Bando, Chunyi Zhi, Tianyou Zhai, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Bulk synthesis, growth mechanism and properties of highly pure ultrafine boron nitride nanotubes with diameters of sub-10 nm. Nanotechnology. 22 [14] (2011) 145602 10.1088/0957-4484/22/14/145602
  8. Kazuhiro Kumagai, Yuanzhao Yao, Jun Chen, Takashi Sekiguchi. Image instability during the electrical measurement in scanning electron microscope. physica status solidi (c). 8 [4] (2011) 1407-1411 10.1002/pssc.201000003
  9. Kazuhiro Kumagai, Takashi Sekiguchi. Secondary electron imaging of titania thin film for surface potential analysis. physica status solidi (c). 8 [4] (2011) 1293-1296 10.1002/pssc.201084013
  10. Hideki Kawakami, Mitsushi Suzuno, Keiichi Akutsu, Jun Chen, Karolin Jiptner, Takashi Sekiguchi, Takashi Suemasu. Effect of Introducing β-FeSi2Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi2/n-Si Heterointerface. Japanese Journal of Applied Physics. 50 [4R] (2011) 041303 10.7567/jjap.50.041303
  11. Naoki Fukata, Shinya Ishida, Shigeki Yokono, Ryo Takiguchi, Jun Chen, Takashi Sekiguchi, Kouichi Murakami. Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires. Nano Letters. 11 [2] (2011) 651-656 10.1021/nl103773e
2010
  1. Sébastien Cueff, Christophe Labbé, Benjamin Dierre, Filippo Fabbri, Takashi Sekiguchi, Xavier Portier, Richard Rizk. Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique. Journal of Applied Physics. 108 [11] (2010) 113504 10.1063/1.3517091
  2. Jing Lin, Benjamin Dierre, Yang Huang, Yoshio Bando, Chengchun Tang, Takashi Sekiguchi, Dmitri Golberg. Spatially resolved cathodoluminescence of individual BN-coated CaS:Eu nanowires. Nanoscale. 3 [2] (2010) 598-602 10.1039/c0nr00700e
  3. Benjamin Dierre, Xiaoli Yuan, Kazuyuki Ueda, Takashi Sekiguchi. Hydrogen released from bulk ZnO single crystals investigated by time-of-flight electron-stimulated desorption. Journal of Applied Physics. 108 [10] (2010) 104902 10.1063/1.3505750
  4. Liwen Sang, Masaki Takeguchi, Woong Lee, Yoshiko Nakayama, Mickael Lozac'h, Takashi Sekiguchi, Masatomo Sumiya. Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template. Applied Physics Express. 3 [11] (2010) 111004 10.1143/apex.3.111004
  5. Filippo Fabbri, Francesca Rossi, Giovanni Attolini, Giancarlo Salviati, Salvatore Iannotta, Lucrezia Aversa, Roberto Verucchi, Marco Nardi, Naoki Fukata, Benjamin Dierre, Takashi Sekiguchi. Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2core/shell self-organized nanowires. Nanotechnology. 21 [34] (2010) 345702 10.1088/0957-4484/21/34/345702
  6. U. K. Gautam, M. Imura, C. S. Rout, Y. Bando, X. Fang, B. Dierre, L. Sakharov, A. Govindaraj, T. Sekiguchi, D. Golberg, C. N. R. Rao. Unipolar assembly of zinc oxide rods manifesting polarity-driven collective luminescence. Proceedings of the National Academy of Sciences. 107 [31] (2010) 13588-13592 10.1073/pnas.1008240107
  7. Naoki Fukata, Keisuke Sato, Masanori Mitome, Yoshio Bando, Takashi Sekiguchi, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert L. Snyder. Doping and Raman Characterization of Boron and Phosphorus Atoms in Germanium Nanowires. ACS Nano. 4 [7] (2010) 3807-3816 10.1021/nn100734e
  8. Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices. Journal of Electronic Materials. 39 [6] (2010) 684-687 10.1007/s11664-010-1168-6
  9. Masayuki Fukuzawa, Masayoshi Yamada, Md. Rafiqul Islam, Jun Chen, Takashi Sekiguchi. Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon. Journal of Electronic Materials. 39 [6] (2010) 700-703 10.1007/s11664-010-1164-x
  10. B. Dierre, X. L. Yuan, N. Armani, F. Fabbri, G. Salviati, K. Ueda, T. Sekiguchi. Effects of Chemical Treatment on the Luminescence of ZnO. Journal of Electronic Materials. 39 [6] (2010) 761-765 10.1007/s11664-010-1124-5
  11. Bin Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Evidence for a general mechanism modulating carrier lifetime in SiC. Physical Review B. 81 [23] (2010) 10.1103/physrevb.81.233203
  12. Yutao Han, Xiang Wu, Guozhen Shen, Benjamin Dierre, Lihong Gong, Fengyu Qu, Yoshio Bando, Takashi Sekiguchi, Fabbri Filippo, Dmitri Golberg. Solution Growth and Cathodoluminescence of Novel SnO2 Core−Shell Homogeneous Microspheres. The Journal of Physical Chemistry C. 114 [18] (2010) 8235-8240 10.1021/jp100942m
  13. Chun Li, Yoshio Bando, Benjamin Dierre, Takashi Sekiguchi, Yang Huang, Jing Lin, Dmitri Golberg. Effect of Size-Dependent Thermal Instability on Synthesis of Zn2SiO4-SiO x Core–Shell Nanotube Arrays and Their Cathodoluminescence Properties. Nanoscale Research Letters. 5 [4] (2010) 773-780 10.1007/s11671-010-9556-7
  14. Baodan Liu, Yoshio Bando, Aimin Wu, Xin Jiang, Benjamin Dierre, Takashi Sekiguchi, Chengchun Tang, Masanori Mitome, Dmitri Golberg. 352 nm ultraviolet emission from high-quality crystalline AlN whiskers. Nanotechnology. 21 [7] (2010) 075708 10.1088/0957-4484/21/7/075708
  15. Benjamin Dierre, Xiaoli Yuan, Takashi Sekiguchi. Low-energy cathodoluminescence microscopy for the characterization of nanostructures. Science and Technology of Advanced Materials. 11 [4] (2010) 043001 10.1088/1468-6996/11/4/043001
  16. Yongzhao YAO, Takashi SEKIGUCHI, Takeshi OHGAKI, Yutaka ADACHI, Naoki OHASHI. Investigation on buffer layer for InN growth by molecular beam epitaxy. Journal of the Ceramic Society of Japan. 118 [1374] (2010) 152-156 10.2109/jcersj2.118.152
  17. Ujjal K. Gautam, Yoshio Bando, Pedro M. F. J. Costa, Xiaosheng Fang, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Inorganically filled carbon nanotubes: Synthesis and properties. Pure and Applied Chemistry. 82 [11] (2010) 10.1351/pac-con-09-12-08
  18. Shiro Shimada, Hiroki Otani, Akira Miura, Takashi Sekiguchi, Masaaki Yokoyama. Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO. Journal of Crystal Growth. 312 [3] (2010) 452-456 10.1016/j.jcrysgro.2009.11.001
2009
  1. Junqing Hu, Zhigang Chen, Huihui Chen, Haihua Chen, Yuelin Song, Yangang Sun, Rujia Zou, Jun Ni, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg, Yoshio Bando. Single-crystal MgS nanotubes: synthesis and properties. CrystEngComm. 12 [4] (2009) 1286-1289 10.1039/b919643a
  2. WANG Yan, Shen Bo, DIERRE, Benjamin, SEKIGUCHI, Takashi, Xu Fu-Jun. Effect of hydrogenation on the luminescence evolution of GaN under low energy electron beam irradiation. ACTA PHYSICA SINICA. 58 [11] (2009) 7864-7868
  3. Laura Lazzarini, Giancarlo Salviati, Filippo Fabbri, Mingzheng Zha, Davide Calestani, Andrea Zappettini, Takashi Sekiguchi, Benjamin Dierre. Unpredicted Nucleation of Extended Zinc Blende Phases in Wurtzite ZnO Nanotetrapod Arms. ACS Nano. 3 [10] (2009) 3158-3164 10.1021/nn900558q
  4. Bin Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers. Journal of Applied Physics. 106 [7] (2009) 074502 10.1063/1.3236579
  5. Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes. physica status solidi (RRL) - Rapid Research Letters. 3 [7-8] (2009) 266-268 10.1002/pssr.200903204
  6. Kazuhiro Kumagai, Takashi Sekiguchi, Katsutoshi Fukuda, Takayoshi Sasaki. Secondary Electron Imaging of Monolayer Titania Nanosheets. Applied Physics Express. 2 [10] (2009) 105504 10.1143/apex.2.105504
  7. Baodan Liu, Yoshio Bando, Benjamin Dierre, Takashi Sekiguchi, Chengchun Tang, Masanori Mitome, Aimin Wu, Xin Jiang, Dmitri Golberg. The synthesis, structure and cathodoluminescence of ellipsoid-shaped ZnGa2O4nanorods. Nanotechnology. 20 [36] (2009) 365705 10.1088/0957-4484/20/36/365705
  8. Tianyou Zhai, Xiaosheng Fang, Yoshio Bando, Benjamin Dierre, Baodan Liu, Haibo Zeng, Xijin Xu, Yang Huang, Xiaoli Yuan, Takashi Sekiguchi, Dmitri Golberg. Characterization, Cathodoluminescence, and Field-Emission Properties of Morphology-Tunable CdS Micro/Nanostructures. Advanced Functional Materials. 19 [15] (2009) 2423-2430 10.1002/adfm.200900295
  9. Yong-Zhao Yao, Takashi Sekiguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi, Hanako Okuno, Masaki Takeguchi. Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 95 [4] (2009) 041913 10.1063/1.3189262
  10. Y. Wang, B. Dierre, T. Sekiguchi, Y. Z. Yao, X. L. Yuan, F. J. Xu, B. Shen. Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27 [4] (2009) 611-613 10.1116/1.3130148
  11. Bin Chen, Jun Chen, Takashi Sekiguchi, Mitsuhiro Saito, Koji Kimoto. Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon. Journal of Applied Physics. 105 [11] (2009) 113502 10.1063/1.3129583
  12. Benjamin Dierre, Xiao L. Yuan, Kazuo Inoue, Naoto Hirosaki, Rong-Jun Xie, Takashi Sekiguchi. Role of Si in the Luminescence of AlN:Eu,Si Phosphors. Journal of the American Ceramic Society. 92 [6] (2009) 1272-1275 10.1111/j.1551-2916.2009.03048.x
  13. Xiaosheng Fang, Yoshio Bando, Meiyong Liao, Ujjal K. Gautam, Chunyi Zhi, Benjamin Dierre, Baodan Liu, Tianyou Zhai, Takashi Sekiguchi, Yasuo Koide, Dmitri Golberg. Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors. Advanced Materials. 21 [20] (2009) 2034-2039 10.1002/adma.200802441
  14. Wei Lin, Dierre Benjamin, Shuping Li, Takashi Sekiguchi, Shun Ito, Junyong Kang. Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells. Crystal Growth & Design. 9 [4] (2009) 1698-1701 10.1021/cg8003867
  15. B. Dierre, X.L. Yuan, T. Ishigaki, K. Ueda, T. Sekiguchi. Hydrogen desorption effect on cathodoluminescence of ZnO. Superlattices and Microstructures. 45 [4-5] (2009) 321-325 10.1016/j.spmi.2008.12.015
  16. Woong Lee, Jun Chen, Bin Chen, Jiho Chang, Takashi Sekiguchi. Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon. Applied Physics Letters. 94 [11] (2009) 112103 10.1063/1.3099001
  17. Takahiro Yamada, Hisanori Yamane, Yongzhao Yao, Masaaki Yokoyama, Takashi Sekiguchi. Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor. Materials Research Bulletin. 44 [3] (2009) 594-599 10.1016/j.materresbull.2008.07.007
  18. Kazuhiro Kumagai, Takashi Sekiguchi. Sharing of secondary electrons by in-lens and out-lens detector in low-voltage scanning electron microscope equipped with immersion lens. Ultramicroscopy. 109 [4] (2009) 368-372 10.1016/j.ultramic.2009.01.005
  19. Yang Huang, Yoshio Bando, Chengchun Tang, Chunyi Zhi, Takeshi Terao, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Thin-walled boron nitride microtubes exhibiting intense band-edge UV emission at room temperature. Nanotechnology. 20 [8] (2009) 085705 10.1088/0957-4484/20/8/085705
  20. Zhi-Gang Chen, Jin Zou, Dai-Wei Wang, Li-Chang Yin, Gang Liu, Qingfeng Liu, Cheng-Hua Sun, Xiangdong Yao, Feng Li, Xiao-Li Yuan, Takashi Sekiguchi, Gao Qing Lu, Hui-Ming Cheng. Field Emission and Cathodoluminescence of ZnS Hexagonal Pyramids of Zinc Blende Structured Single Crystals. Advanced Functional Materials. 19 [3] (2009) 484-490 10.1002/adfm.200801178
  21. Jun Kobayashi, Hideyuki Sekiwa, Miyuki Miyamoto, Isao Sakaguchi, Yoshiki Wada, Takashi Sekiguchi, Yutaka Adachi, Hajime Haneda, Naoki Ohashi. Growth of Bulky Single Crystalline Films of (Zn,Mg)O Alloy Semiconductors by Liquid Phase Epitaxy. Crystal Growth & Design. 9 [2] (2009) 1219-1224 10.1021/cg801211m
  22. Zhi-Gang Chen, Jin Zou, Gang Liu, Feng Li, Hui-Ming Cheng, Takashi Sekiguchi, Min Gu, Xiang-Dong Yao, Lian-Zhou Wang, Gao Qing Lu. Long wavelength emissions of periodic yard-glass shaped boron nitride nanotubes. Applied Physics Letters. 94 [2] (2009) 023105 10.1063/1.3069278
  23. Junqing Hu, Hao Jiang, Zhigang Chen, Yangang Sun, Yoshio Bando, Takashi Sekiguchi, Dmitri Golberg. Uniform, thin and continuous graphitic carbon tubular coatings on CdS nanowires. Journal of Materials Chemistry. 19 [8] (2009) 1093 10.1039/b814674h
  24. Ujjal K. Gautam, L. S. Panchakarla, Benjamin Dierre, Xiaosheng Fang, Yoshio Bando, Takashi Sekiguchi, A. Govindaraj, Dmitri Golberg, C. N. R. Rao. Solvothermal Synthesis, Cathodoluminescence, and Field-Emission Properties of Pure and N-Doped ZnO Nanobullets. Advanced Functional Materials. 19 [1] (2009) 131-140 10.1002/adfm.200801259
2008
  1. Makoto Suzuki, Yusuke Ominami, Takashi Sekiguchi, Cary Y. Yang. Secondary electron imaging of embedded defects in carbon nanofiber via interconnects. Applied Physics Letters. 93 [26] (2008) 263110 10.1063/1.3063053
  2. Makoto Suzuki, Kazuhiro Kumagai, Takashi Sekiguchi, Alan M. Cassell, Tsutomu Saito, Cary Y. Yang. Secondary electron emission from freely supported nanowires. Journal of Applied Physics. 104 [11] (2008) 114306 10.1063/1.3032910
  3. Y.J. Zhang, J.B. Wang, X.L. Zhong, Y.C. Zhou, X.L. Yuan, T. Sekiguchi. Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films. Solid State Communications. 148 [9-10] (2008) 448-451 10.1016/j.ssc.2008.09.014
  4. N. Fukata, M. Mitome, Y. Bando, M. Seoka, S. Matsushita, K. Murakami, J. Chen, T. Sekiguchi. Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation. Applied Physics Letters. 93 [20] (2008) 203106 10.1063/1.3033226
  5. Sato Tomonari, Kondo Yasuhiro, SEKIGUCHI, Takashi, Suemasu Takashi. Sb Surfactant Effect on Defect Evolution in Compressively Strained In0:80Ga0:20As. APPLIED PHYSICS EXPRESS. 1 [11] (2008) 111202-1-111202-3
  6. F. Fabbri, A. Cavallini, G. Attolini, F. Rossi, G. Salviati, B. Dierre, N. Fukata, T. Sekiguchi. Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide. Materials Science in Semiconductor Processing. 11 [5-6] (2008) 179-181 10.1016/j.mssp.2008.10.004
  7. Jun Chen, Bin Chen, Takashi Sekiguchi, Masayuki Fukuzawa, Masayoki Yamada. Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon. Applied Physics Letters. 93 [11] (2008) 112105 10.1063/1.2983649
  8. Jian Yan, Xiaosheng Fang, Lide Zhang, Yoshio Bando, Ujjal K. Gautam, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Structure and Cathodoluminescence of Individual ZnS/ZnO Biaxial Nanobelt Heterostructures. Nano Letters. 8 [9] (2008) 2794-2799 10.1021/nl801353c
  9. Duanjun Cai, Junyong Kang, Pierre Gibart, Bernard Beaumont, Takachi Sekiguchi, Shun Ito. Band-edge emission enhancement by longitudinal stress field in GaN. Applied Physics Letters. 93 [8] (2008) 081908 10.1063/1.2973673
  10. B. Dierre, X. L. Yuan, T. Sekiguchi. Luminescence evolution of ZnO single crystal under low-energy electron beam irradiation. Journal of Applied Physics. 104 [4] (2008) 043528 10.1063/1.2973190
  11. Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri. Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode. Applied Physics Letters. 93 [3] (2008) 033514 10.1063/1.2960339
  12. J. Chen, X. Yuan, T. Sekiguchi. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique. Scanning. 30 [4] (2008) 347-353 10.1002/sca.20116
  13. Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current. Applied Physics Letters. 92 [26] (2008) 262103 10.1063/1.2952829
  14. B. Dierre, X.L. Yuan, N. Hirosaki, T. Kimura, R-J. Xie, T. Sekiguchi. Luminescence distribution of Yb-doped Ca-α-SiAlON phosphors. Journal of Materials Research. 23 [06] (2008) 1701-1705 10.1557/jmr.2008.0208
  15. Yong-zhao Yao, Takashi Sekiguchi, Naoki Ohashi, Yutaka Adachi, Takeshi Ohgaki. Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In∕N ratio by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 92 [21] (2008) 211910 10.1063/1.2937833
  16. Shaoyun Huang, Naoki Fukata, Maki Shimizu, Tomohiro Yamaguchi, Takashi Sekiguchi, Koji Ishibashi. Classical Coulomb blockade of a silicon nanowire dot. Applied Physics Letters. 92 [21] (2008) 213110 10.1063/1.2937406
  17. Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi, Yoshiaki Hara. Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk. Applied Physics Letters. 92 [19] (2008) 192114 10.1063/1.2929744
  18. Hui-Li Li, Rong-Jun Xie, Naoto Hirosaki, Berjamin Dierre, Takashi Sekiguchi, Yoshiyoki Yajima. Preparation and Cathodoluminescence of Mg-Doped and Zn-Doped GaN Powders. Journal of the American Ceramic Society. 91 [5] (2008) 1711-1714 10.1111/j.1551-2916.2008.02338.x
  19. B. Dierre, X. L. Yuan, N. Ohashi, T. Sekiguchi. Effects of specimen preparation on the cathodoluminescence properties of ZnO nanoparticles. Journal of Applied Physics. 103 [8] (2008) 083551 10.1063/1.2904858
  20. SEKIGUCHI, Takashi, Yuan, Xiaoli, KOIZUMI, Satoshi, TANIGUCHI, Takashi. Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique. Beam Injection Based Nanocharacterization of Advanced Materials. (2008) 139-152
  21. Fang, Ujjal K. Gautam, Yoshio Bando, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Multiangular Branched ZnS Nanostructures with Needle-Shaped Tips:  Potential Luminescent and Field-Emitter Nanomaterial. The Journal of Physical Chemistry C. 112 [12] (2008) 4735-4742 10.1021/jp711498m
  22. Yongzhao Yao, Takashi Sekiguchi, Yoshiki Sakuma, Naoki Ohashi, Yutaka Adachi, Hanako Okuno, Masaki Takeguchi. InN Growth by Plasma-Assisted Molecular Beam Epitaxy with Indium Monolayer Insertion. Crystal Growth & Design. 8 [3] (2008) 1073-1077 10.1021/cg700947g
  23. Wei-Qiang Han, Hua-Gen Yu, Chunyi Zhi, Jianbin Wang, Zhenxian Liu, Takashi Sekiguchi, Yoshio Bando. Isotope Effect on Band Gap and Radiative Transitions Properties of Boron Nitride Nanotubes. Nano Letters. 8 [2] (2008) 491-494 10.1021/nl0726151
  24. Akira Miura, Shiro Shimada, Takashi Sekiguchi, Masaaki Yokoyama, Bunsyo Mizobuchi. Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3. Journal of Crystal Growth. 310 [3] (2008) 530-535 10.1016/j.jcrysgro.2007.11.068
  25. Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi. Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current. Applied Physics Letters. 92 [4] (2008) 042117 10.1063/1.2835904
2007
  1. Yoshihiro Irokawa, Yoshiki Sakuma, Takashi Sekiguchi. Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes. Japanese Journal of Applied Physics. 46 [12] (2007) 7714-7716 10.1143/jjap.46.7714
  2. Shin-ichiro Yanagiya, Yuji Iseki, Takamasa Kaito, Atsushi Mori, Chihiro Kaito, Takashi Sekiguchi, Tetsuo Inoue. Growth of ZnS nano-crystallites in gel and their characterization. Materials Chemistry and Physics. 105 [2-3] (2007) 250-252 10.1016/j.matchemphys.2007.04.057
  3. Jun Chen, Takashi Sekiguchi. Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon. Japanese Journal of Applied Physics. 46 [10A] (2007) 6489-6497 10.1143/jjap.46.6489
  4. E. M. Shishonok, T. Taniguchi, T. Sekiguchi. Luminescence investigations of cubic boron nitride doped with beryllium. Physics of the Solid State. 49 [10] (2007) 1884-1890 10.1134/s1063783407100125
  5. X. L. Yuan, B. Dierre, J. B. Wang, B. P. Zhang, T. Sekiguchi. Spatial Distribution of Impurities in ZnO Nanotubes Characterized by Cathodoluminescence. Journal of Nanoscience and Nanotechnology. 7 [9] (2007) 3323-3327 10.1166/jnn.2007.661
  6. L. Q. Xu, J.   H. Zhan, J. Q. Hu, Y. Bando, X. L. Yuan, T. Sekiguchi, M. Mitome, D. Golberg. High-Yield Synthesis of Rhombohedral Boron Nitride Triangular Nanoplates. Advanced Materials. 19 [16] (2007) 2141-2144 10.1002/adma.200700366
  7. N. Hirosaki, R.-J. Xie, K. Inoue, T. Sekiguchi, B. Dierre, K. Tamura. Blue-emitting AlN:Eu2+ nitride phosphor for field emission displays. Applied Physics Letters. 91 [6] (2007) 061101 10.1063/1.2767182
  8. Qing Huang, Yoshio Bando, Atula Sandanayaka, Chengchun Tang, Jinbin Wang, Takashi Sekiguchi, Chunyi Zhi, Dmitri Golberg, Yasuyuki Araki, Osamu Ito, Fangfang Xu, Lian Gao. Photoinduced Charge Injection and Bandgap-Engineering of High-Specific-Surface-Area BN Nanotubes using a Zinc Phthalocyanine Monolayer. Small. 3 [8] (2007) 1330-1335 10.1002/smll.200700145
  9. SEKIGUCHI, Takashi, CHEN, Jun, Yuan, Xiaoli. 電子線誘起電流法(EBIC)を使ったシリコン系機能材料の特性評価. 顕微鏡. 42 [2] (2007) 84-88
  10. Takahiro Yamada, Hisanori Yamane, Takenari Goto, Takafumi Yao, Yongzhao Yao, Takashi Sekiguchi. Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere. Crystal Research and Technology. 42 [7] (2007) 713-717 10.1002/crat.200610893
  11. Shiro Shimada, Yoko Miura, Akira Miura, Takashi Sekiguchi. Synthesis and Characterization of Ge-Doped GaN Crystalline Powders Deposited on Graphite and Silica Glass Substrates. Crystal Growth & Design. 7 [7] (2007) 1251-1255 10.1021/cg068014p
  12. Benjamin Dierre, Rong-Jun Xie, Naoto Hirosaki, T. Sekiguchi. Blue emission of Ce3+ in lanthanide silicon oxynitride phosphors. Journal of Materials Research. 22 [07] (2007) 1933-1941 10.1557/jmr.2007.0231
  13. Hui Zhang, Rongguo Xie, T. Sekiguchi, Xiangyang Ma, Deren Yang. Cathodoluminescence and its mapping of flower-like ZnO, ZnO/ZnS core–shell and tube-like ZnS nanostructures. Materials Research Bulletin. 42 [7] (2007) 1286-1292 10.1016/j.materresbull.2006.10.012
  14. Jun-Ichi Niitsuma, Takashi Sekiguchi, Xiao-Li Yuan, Yuji Awano. Electron Beam Nanoprocessing of a Carbon Nanotube Film Using a Variable Pressure Scanning Electron Microscope. Journal of Nanoscience and Nanotechnology. 7 [7] (2007) 2356-2360 10.1166/jnn.2007.420
  15. Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, T. Sekiguchi. Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation. Physical Review B. 75 [24] (2007) 10.1103/physrevb.75.245206
  16. N. Mizuochi, J. Isoya, J. Niitsuma, T. Sekiguchi, H. Watanabe, H. Kato, T. Makino, H. Okushi, S. Yamasaki. Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth. Journal of Applied Physics. 101 [10] (2007) 103501 10.1063/1.2727380
  17. Xingbo Liang, Lei Wang, Xiangyang Ma, Dongsheng Li, Peihong Cheng, Deren Yang, Jun Chen, Takashi Sekiguchi. Enhanced red electroluminescence from a polycrystalline diamond film/Si heterojunction structure. Applied Physics Letters. 90 [16] (2007) 161123 10.1063/1.2730584
  18. N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, T. Oshima, N. Uchida, K. Murakami, T. Tsurui, S. Ito. Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation. Applied Physics Letters. 90 [15] (2007) 153117 10.1063/1.2721377
  19. Tsunenobu Onodera, Hidetoshi Oikawa, Akito Masuhara, Hitoshi Kasai, Takashi Sekiguchi, Hachiro Nakanishi. Silver-Deposited Polydiacetylene Nanocrystals Produced by Visible-Light-Driven Photocatalytic Reduction. Japanese Journal of Applied Physics. 46 [No. 14] (2007) L336-L338 10.1143/jjap.46.l336
  20. Xia Feng, Junyong Kang, Wataru Inami, Xiaoli Yuan, Masami Terauchi, Takashi Sekiguchi, Shin Tsunekawa, Shun Ito, Toshio Sakurai. ZnO Films Grown on Si Substrates with Au Nanocrystallites as Nuclei. Crystal Growth & Design. 7 [3] (2007) 564-568 10.1021/cg060237s
  21. L.-W. Yin, M.-S. Li, Y. Bando, D. Golberg, X. L. Yuan, T. Sekiguchi. Tailoring the Optical Properties of Epitaxially Grown Biaxial ZnO/Ge, and Coaxial ZnO/Ge/ZnO and Ge/ZnO/Ge Heterostructures. Advanced Functional Materials. 17 [2] (2007) 270-276 10.1002/adfm.200600065
2006
  1. SEKIGUCHI, Takashi, Yuan, Xiaoli. カソードルミネッセンスによる半導体ナノ構造の観察. まてりあ. 45 [12] (2006) 899-899
  2. J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada. Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. Applied Physics Letters. 89 [22] (2006) 222104 10.1063/1.2392988
  3. Guozhen Shen, Yoshio Bando, Changhui Ye, Xiaoli Yuan, Takashi Sekiguchi, Dmitri Golberg. Single-Crystal Nanotubes of II3–V2 Semiconductors. Angewandte Chemie International Edition. 45 [45] (2006) 7568-7572 10.1002/anie.200602636
  4. N. Fukata, J. Chen, T. Sekiguchi, N. Okada, K. Murakami, T. Tsurui, S. Ito. Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation. Applied Physics Letters. 89 [20] (2006) 203109 10.1063/1.2372698
  5. SEKIGUCHI, Takashi, CHEN, Jun, Shun ITO. 電子線誘起電流(EBIC)法を用いた多結晶シリコンにおける粒界の電気的活性度評価. まてりあ. 45 [10] (2006) 729-733
  6. Rongguo Xie, Dongsheng Li, Hui Zhang, Deren Yang, Minhua Jiang, Takashi Sekiguchi, Baodan Liu, Yoshi Bando. Low-Temperature Growth of Uniform ZnO Particles with Controllable Ellipsoidal Morphologies and Characteristic Luminescence Patterns. The Journal of Physical Chemistry B. 110 [39] (2006) 19147-19153 10.1021/jp0605449
  7. NAGATA, Takahiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. 集束イオンビームCVD法によるGaN立体構造の作製と評価. BULLETIN OF THE JAPAN ELECTRONIC MATERIALS SOCIETY(日本電子材料技術協会会報). 37 (2006) 37-39
  8. Yongzhao Yao, Takashi Sekiguchi, Yoshiki Sakuma, Makoto Miyamura, Yasuhiko Arakawa. Cathodoluminescence characterization of GaN quantum dots grown on 6H–SiC substrate by metal-organic chemical vapor deposition. Scripta Materialia. 55 [8] (2006) 679-682 10.1016/j.scriptamat.2006.06.031
  9. J. Q. Hu, Y. Bando, J. H. Zhan, X. L. Yuan, T. Sekiguchi, C. Z. Li, D. Golberg. Silica Fibers with Triangular Cross Sections. Advanced Materials. 18 [14] (2006) 1852-1856 10.1002/adma.200600082
  10. Rongguo Xie, Dongsheng Li, Deren Yang, Takashi Sekiguchi, Minhua Jiang. Thermal-desorption induced enhancement and patterning of ultraviolet emission in chemically grown ZnO. Nanotechnology. 17 [11] (2006) 2789-2793 10.1088/0957-4484/17/11/011
  11. G. Z. Shen, Y. Bando, C. Y. Zhi, X. L. Yuan, T. Sekiguchi, D. Golberg. Single-crystalline cubic structured InP nanosprings. Applied Physics Letters. 88 [24] (2006) 243106 10.1063/1.2208933
  12. Rongguo Xie, Takashi Sekiguchi, Takamasa Ishigaki, Naoki Ohashi, Dongsheng Li, Deren Yang, Baodan Liu, Yoshio Bando. Enhancement and patterning of ultraviolet emission in ZnO with an electron beam. Applied Physics Letters. 88 [13] (2006) 134103 10.1063/1.2189200
  13. N. Mizuochi, H. Watanabe, H. Okushi, S. Yamasaki, J. Niitsuma, T. Sekiguchi. Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence. Applied Physics Letters. 88 [9] (2006) 091912 10.1063/1.2176860
  14. Jun-ichi Niitsuma, Xiao-li Yuan, Satoshi Koizumi, Takashi Sekiguchi. Nanoprocessing of Diamond Using a Variable Pressure Scanning Electron Microscope. Japanese Journal of Applied Physics. 45 [No. 2] (2006) L71-L73 10.1143/jjap.45.l71
  15. Tsunenobu Onodera, Zhenquan Tan, Akito Masuhara, Hidetoshi Oikawa, Hitoshi Kasai, Hachiro Nakanishi, Takashi Sekiguchi. Silver-Coated Polydiacetylene Nanocrystals Fabricated Using Surfactants as Binder. Japanese Journal of Applied Physics. 45 [1B] (2006) 379-383 10.1143/jjap.45.379
  16. Rongguo Xie, Takashi Sekiguchi, Dongsheng Li, Deren Yang, Minhua Jiang. Precise Fabrication of Point Defects in Self-Assembled Three-Dimensional Macroporous Photonic Crystals. The Journal of Physical Chemistry B. 110 [3] (2006) 1107-1110 10.1021/jp056153w
  17. Jinhua Zhan, Yoshio Bando, Junqing Hu, Longwei Yin, Xiaoli Yuan, Takashi Sekiguchi, Dmitri Golberg. Hollow and Polygonous Microtubes of Monocrystalline Indium Germanate. Angewandte Chemie International Edition. 45 [2] (2006) 228-231 10.1002/anie.200502870
2005
  1. X.L. Yuan, J. Niitsuma, T. Sekiguchi, M. Takase, T. Taniguchi. Characterization of p–n junction formed at the boundary of facets in cubic-BN using scanning electron microscope. Diamond and Related Materials. 14 [11-12] (2005) 1955-1959 10.1016/j.diamond.2005.08.011
  2. Chunyi Zhi, Yoshio Bando, Chengchun Tang, Rongguo Xie, Takashi Sekiguchi, Dmitri Golberg. Perfectly Dissolved Boron Nitride Nanotubes Due to Polymer Wrapping. Journal of the American Chemical Society. 127 [46] (2005) 15996-15997 10.1021/ja053917c
  3. Long-Wei Yin, Yoshio Bando, Dmitri Golberg, Alexandre Gloter, Mu-Sen Li, Xiaoli Yuan, Takashi Sekiguchi. Porous BCN Nanotubular Fibers:  Growth and Spatially Resolved Cathodoluminescence. Journal of the American Chemical Society. 127 [47] (2005) 16354-16355 10.1021/ja054887g
  4. T. Nagata, P. Ahmet, T. Sekiguchi, T. Chikyow. Low-temperature growth of GaN microcrystals from position-controlled Ga droplets arrayed by a low-energy focused ion beam system. Journal of Crystal Growth. 283 [3-4] (2005) 328-331 10.1016/j.jcrysgro.2005.06.010
  5. Haruki Ryoken, Isao Sakaguchi, Naoki Ohashi, Takashi Sekiguchi, Shunichi Hishita, Hajime Haneda. Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method. Journal of Materials Research. 20 [10] (2005) 2866-2872 10.1557/jmr.2005.0353
  6. Eiji Kimura, Takashi Sekiguchi, Hidetoshi Oikawa, Junichi Niitsuma, Yoshihiko Nakayama, Hiroyuki Suzuki, Masashi Kimura, Kazuhiro Fujii, Tatsuo Ushiki. Cathodoluminescence imaging for identifying uptaken fluorescence materials in Kupffer cells using scanning electron microscopy. Archives of Histology and Cytology. 67 [3] (2005) 263-270 10.1679/aohc.67.263
  7. J. Q. Hu, Y. Bando, J. H. Zhan, M. Y. Liao, D. Golberg, X. L. Yuan, T. Sekiguchi. Single-crystalline nanotubes of IIB-VI semiconductors. Applied Physics Letters. 87 [11] (2005) 113107 10.1063/1.2042634
  8. J NIITSUMA, X YUAN, S ITO, T SEKIGUCHI. Processing of carbon nanotubes with electron beams in gas atmospheres. Scripta Materialia. 53 [6] (2005) 703-705 10.1016/j.scriptamat.2005.05.028
  9. Chunyi Zhi, Yoshio Bando, Chengchun Tang, Dmitri Golberg, Rongguo Xie, Takashi Sekiguchi. Large-scale fabrication of boron nitride nanohorn. Applied Physics Letters. 87 [6] (2005) 063107 10.1063/1.2009056
  10. Jun-ichi Niitsuma, Hidetoshi Oikawa, Eiji Kimura, Tatsuo Ushiki, Takashi Sekiguchi. Cathodoluminescence investigation of organic materials. Microscopy. 54 [4] (2005) 325-330 10.1093/jmicro/dfi043
  11. T. Nagata, P. Ahmet, Y. Sakuma, T. Sekiguchi, T. Chikyow. GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition. Applied Physics Letters. 87 [1] (2005) 013103 10.1063/1.1968435
  12. Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi. Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination. Physica B: Condensed Matter. 364 [1-4] (2005) 162-169 10.1016/j.physb.2005.04.008
  13. J CHEN, T SEKIGUCHI, R XIE, P AHMET, T CHIKYO, D YANG, S ITO, F YIN. Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon. Scripta Materialia. 52 [12] (2005) 1211-1215 10.1016/j.scriptamat.2005.03.010
  14. Naoto Hirosaki, Rong-Jun Xie, Koji Kimoto, Takashi Sekiguchi, Yoshinobu Yamamoto, Takayuki Suehiro, Mamoru Mitomo. Characterization and properties of green-emitting β-SiAlON:Eu2+ powder phosphors for white light-emitting diodes. Applied Physics Letters. 86 [21] (2005) 211905 10.1063/1.1935027
  15. Chunyi Zhi, Yoshio Bando, Chengchun Tang, Dmitri Golberg, Rongguo Xie, Takashi Sekigushi. Phonon characteristics and cathodolumininescence of boron nitride nanotubes. Applied Physics Letters. 86 [21] (2005) 213110 10.1063/1.1938002
  16. Z.Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, T. Sekiguchi. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition. Applied Surface Science. 244 [1-4] (2005) 377-380 10.1016/j.apsusc.2004.10.093
  17. R.-J. Xie, N. Hirosaki, M. Mitomo, K. Uheda, T. Suehiro, X. Xu, Y. Yamamoto, T. Sekiguchi. Strong Green Emission from α-SiAlON Activated by Divalent Ytterbium under Blue Light Irradiation. The Journal of Physical Chemistry B. 109 [19] (2005) 9490-9494 10.1021/jp050580s
  18. X. L. Yuan, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Ito, S. G. Ri. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2. Applied Physics Letters. 86 [16] (2005) 162102 10.1063/1.1905802
  19. J. Hu, Y. Bando, J. Zhan, X. Yuan, T. Sekiguchi, D. Golberg. Self-Assembly of SiO2 Nanowires and Si Microwires into Hierarchical Heterostructures on a Large Scale. Advanced Materials. 17 [8] (2005) 971-975 10.1002/adma.200401789
  20. Tadashi Mitsui, Takashi Sekiguchi, Daisuke Fujita, Nobuyuki Koguchi. Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots. Japanese Journal of Applied Physics. 44 [4A] (2005) 1820-1824 10.1143/jjap.44.1820
  21. Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira. Microvoid formation in hydrogen-implantedZnOprobed by a slow positron beam. Physical Review B. 71 [11] (2005) 10.1103/physrevb.71.115213
  22. R. Buckmaster, J.H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe, T. Yao. GaN nanodot fabrication by implant source growth. Microelectronics Journal. 36 [3-6] (2005) 456-459 10.1016/j.mejo.2005.02.009
  23. Naoki Ohashi, Naoki Ebisawa, Takashi Sekiguchi, Isao Sakaguchi, Yoshiki Wada, Tadashi Takenaka, Hajime Haneda. Yellowish-white luminescence in codoped zinc oxide. Applied Physics Letters. 86 [9] (2005) 091902 10.1063/1.1871349
  24. B. D. Liu, Y. Bando, C. C. Tang, D. Golberg, R. G. Xie, T. Sekiguchi. Synthesis and optical study of crystalline GaP nanoflowers. Applied Physics Letters. 86 [8] (2005) 083107 10.1063/1.1875732
  25. J. H. Song, Y. Z. Yoo, Kiyomi Nakajima, Toyohiro Chikyow, Takashi Sekiguchi, Hideomi Koinuma. Nonpolar a-plane GaN film on Si(100) produced using a specially designed lattice-matched buffer: A fresh approach to eliminate the polarization effect. Journal of Applied Physics. 97 [4] (2005) 043531 10.1063/1.1849830
  26. Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe, Takashi Sekiguchi, Tsurekawa S., Hamada S., Shibata M., Kawahara K., Watanabe T., SEKIGUCHI, Takashi. Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature. Zeitschrift für Metallkunde. 96 [2] (2005) 197-206
  27. Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe, Takashi Sekiguchi. Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature. Zeitschrift für Metallkunde. 96 [2] (2005) 197-206 10.3139/146.101020
  28. Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi. Recombination activity of Σ3 boundaries in boron-doped multicrystalline silicon: Influence of iron contamination. Journal of Applied Physics. 97 [3] (2005) 033701 10.1063/1.1836009
  29. J. Zhan, Y. Bando, J. Hu, T. Sekiguchi, D. Golberg. Single-Catalyst Confined Growth of ZnS/Si Composite Nanowires. Advanced Materials. 17 [2] (2005) 225-230 10.1002/adma.200400585
  30. Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira. Production and recovery of defects in phosphorus-implanted ZnO. Journal of Applied Physics. 97 [1] (2005) 013528 10.1063/1.1821636
2004
  1. J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido, S. Tsurekawa. Electron-beam-induced current study of grain boundaries in multicrystalline silicon. Journal of Applied Physics. 96 [10] (2004) 5490-5495 10.1063/1.1797548
  2. T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe, K. Nakajima. Molten metal flux growth and properties of CrSi2. Journal of Alloys and Compounds. 383 [1-2] (2004) 319-321 10.1016/j.jallcom.2004.04.037
  3. J. Q. Hu, Y. Bando, J. H. Zhan, F. F. Xu, T. Sekiguchi, D. Golberg. Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections. Advanced Materials. 16 [16] (2004) 1465-1468 10.1002/adma.200400016
  4. Y Watanabe, H Hibino, S Bhunia, K Tateno, T Sekiguchi. Site-controlled InP nanowires grown on patterned Si substrates. Physica E: Low-dimensional Systems and Nanostructures. 24 [1-2] (2004) 133-137 10.1016/j.physe.2004.04.002
  5. Noriko Saito, Hajime Haneda, Takashi Sekiguchi, Takamasa Ishigaki, Kunihito Koumoto. Effect of Postdeposition Annealing on Luminescence from Zinc Oxide Patterns Prepared by the Electroless Deposition Process. Journal of The Electrochemical Society. 151 [8] (2004) H169 10.1149/1.1763143
  6. S. Nara, T. Sekiguchi, J. Chen. High quality multicrystalline silicon grown by multi-stage solidification control method. The European Physical Journal Applied Physics. 27 [1-3] (2004) 389-392 10.1051/epjap:2004063
  7. T. Sekiguchi, Q. Liu, T. Tanaka, J. Hu, Y. Zhu, Y. Bando. Cathodoluminescence study of widegap-semiconductor nanowires. The European Physical Journal Applied Physics. 27 [1-3] (2004) 107-109 10.1051/epjap:2004062
  8. X. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito. Study of dislocations in strained-Si/Si0.8Ge0.2heterostructures by EBIC, TEM and etching techniques. The European Physical Journal Applied Physics. 27 [1-3] (2004) 337-340 10.1051/epjap:2004119-7
  9. Katsuhiko Ooshita, Tetsuo Inoue, Takashi Sekiguchi, Shin-ichiro Yanagiya, Atsushi Mori. Flux growth of ZnS single crystals and their characterization. Journal of Crystal Growth. 267 [1-2] (2004) 74-79 10.1016/j.jcrysgro.2004.03.067
  10. Tae-Won Kim, Tadashi Kawazoe, Shunsuke Yamazaki, Motoichi Ohtsu, Takashi Sekiguchi. Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires. Applied Physics Letters. 84 [17] (2004) 3358-3360 10.1063/1.1723696
  11. X. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito. Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique. Applied Physics Letters. 84 [17] (2004) 3316-3318 10.1063/1.1734688
  12. T. Sekiguchi. Cathodoluminescence study of one-dimensional free-standing widegap-semiconductor nanostructures: GaN nanotubes, Si3N4 nanobelts and ZnS/Si nanowires. Journal of Electron Microscopy. 53 [2] (2004) 203-208 10.1093/jmicro/53.2.203
  13. Z.Q. Chen, M. Maekawa, SEKIGUCHI, Takashi, R. Suzuki, A. Kawasuso. Ion-implantation induced defects in ZnO studied by a slow positron beam. MATERIALS SCIENCE FORUM. 445 [446] (2004) 57-59
  14. J. Q. Hu, Y. Bando, T. Sekiguchi, F. F. Xu, J. H. Zhan. Two-dimensional extremely thin single-crystalline α-Si3N4 microribbons. Applied Physics Letters. 84 [5] (2004) 804-806 10.1063/1.1644911
  15. Y.-Z. Yoo, T. Sekiguchi, T. Chikyow, M. Kawasaki, T. Onuma, S. F. Chichibu, J. H. Song, H. Koinuma. V defects of ZnO thin films grown on Si as an ultraviolet optical path. Applied Physics Letters. 84 [4] (2004) 502-504 10.1063/1.1643535
  16. Junqing Hu, Yoshio Bando, Zongwen Liu, Fangfang Xu, Takashi Sekiguchi, Jinhua Zhan. Uniform Micro-Sized ?- and ?-Si3N4 Thin Ribbons Grown by a High-Temperature Thermal-Decomposition/Nitridation Route. Chemistry - A European Journal. 10 [2] (2004) 554-558 10.1002/chem.200305390
  17. J Chen, T Sekiguchi, S Nara, D Yang. The characterization of high quality multicrystalline silicon by the electron beam induced current method. Journal of Physics: Condensed Matter. 16 [2] (2004) S211-S216 10.1088/0953-8984/16/2/025
  18. Z Q Chen, T Sekiguchi, X L Yuan, M Maekawa, A Kawasuso. N+ion-implantation-induced defects in ZnO studied with a slow positron beam. Journal of Physics: Condensed Matter. 16 [2] (2004) S293-S299 10.1088/0953-8984/16/2/035
  19. T Sekiguchi, S Koizumi, T Taniguchi. Characterization of p–n junctions of diamond and c-BN by cathodoluminescence and electron-beam-induced current. Journal of Physics: Condensed Matter. 16 [2] (2004) S91-S97 10.1088/0953-8984/16/2/011
  20. Junqing Hu, Yoshio Bando, Zongwen Liu, Jinhua Zhan, Dmitri Golberg, Takashi Sekiguchi. Synthesis of Crystalline Silicon Tubular Nanostructures with ZnS Nanowires as Removable Templates. Angewandte Chemie International Edition. 43 [1] (2004) 63-66 10.1002/anie.200352483
  21. Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira. Evolution of voids inAl+-implanted ZnO probed by a slow positron beam. Physical Review B. 69 [3] (2004) 10.1103/physrevb.69.035210

Books TSV

2016
  1. SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. 2016 , 343-373
2015
  1. 関口 隆史. 電子線誘起電流、カソードルミネッセンス. シリコン結晶技術. 2015 , 422-426
2013
  1. 関口 隆史. CL, EBIC. 薄膜の評価技術ハンドブック. 2013 , 75-78
2011
  1. 関口 隆史. シリコン歪み格子とその応用―歪シリコン,シリコンゲルマニウム混晶の物性制御―. バンドギャップエンジニアリング ―次世代高効率デバイスへの挑戦―. 2011 , 208-214
2009
  1. 知京 豊裕, 吉武 道子, 関口 隆史. 半導体・電子材料界面の構築. 第3版 現代界面コロイド化学の基礎. 2009 , 211-212

Proceedings TSV

2017
  1. SEKIGUCHI, Takashi, LEE, Woong, LUO, Xianjia, KIMURA, Takashi, CHO, Yujin. Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2017, 1700054-1-1700054-4
  2. YOSHIMURA, Kenichi, CHO, Yujin, LUO, Xianjia, KIMURA, Takashi, SEKIGUCHI, Takashi. Cathodoluminescnece study of pn-junctions in widegap materials using cross sectional polishing. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2017, 1700096-1-1700096-4
  3. Toshihide Agemura, IWAI, Hideo, SEKIGUCHI, Takashi. Development of fountain detectors for spectroscopy of secondary electron in SEM. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2017, 1700057-1-1700057-5
2015
  1. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 50 cm Size Seed Cast Si Ingot Growth and its Characterization. SOLID STATE PHENOMENA 2015, 30-34
  2. Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Orientation Dependency of Dislocation Generation in Si Growth Process. SOLID STATE PHENOMENA 2015, 15-20
  3. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2015, 1094-1098
  4. Chen Ning Zhang, Tetsuo Uchikoshi, Li Hong Liu, Benjamin Dierre, Yu Jin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Textured Beta-Sialon:Eu<sup>2+</sup> Phosphor Deposits Fabricated by Electrophoretic Deposition (EPD) Process within a Strong Magnetic Field: Preparation Process and Photoluminescence (PL) Properties Depending on Orientation. KEY ENGINEERING MATERIALS 2015, 268-273
  5. Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada. Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique. SOLID STATE PHENOMENA 2015, 35-40
2014
  1. JIPTNER, Karolin, Bing Gao, HARADA, Hirofumi, PRAKASH, Ronit Roneel, MIYAMURA, Yoshiji, Masayuki Fukuzawa, Koichi Kakimoto, SEKIGUCHI, Takashi. Determination of thermal stress induced dislocations and relation to residual strain in cast-grown Si ingots. Proc. of Crystal Si Solar Cells & Modules 2014, 82-85
  2. MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi, Satoshi Nakano, Koichi Kakimoto. 50 cm square mono Si ingot growth by seed cast method. Proc on Crystalline Si Solar Cells & Modules 2014, 159-163
  3. JIPTNER, Karolin, HARADA, Hirofumi, MIYAMURA, Yoshiji, Bing Gao, Masayuki Fukuzawa, Koichi Kakimoto, SEKIGUCHI, Takashi. Reduction of dislocation density by cooling optimization in Si crystal growth. Reduction of dislocation density by cooling optimization in Si crystal growth 2014, 176-181
  4. CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, Atsushi Ogura, SEKIGUCHI, Takashi. Understanding of inhomogeneous dislocation distribution in multicrystalline silicon. SOLID STATE PHENOMENA 2014, 77-82
2013
  1. CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi. An investigation of the impact of crystal orientation on dislocation distribution in multicrystalline silicon. Proceedings of 7th International Workshop on Crystalline Silicon Solar Cells 2013, 138-141
  2. JIPTNER, Karolin, Fukuzawa Masayuki, MIYAMURA, Yoshiji, HARADA, Hirofumi, Kakimoto Koichi, SEKIGUCHI, Takashi. ANALYSIS OF RESIDUAL STRAIN AND DISLOCATION DENSITY IN SEED-CAST SI INGOTS. ANALYSIS OF RESIDUAL STRAIN AND DISLOCATION DENSITY IN SEED-CAST SI INGOTS 2013, 9999-9999
  3. JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, Kakimoto Koichi, SEKIGUCHI, Takashi. Origin of dislocations in Si ingots grown by seeded directional solidification. Proceedings of CSSC7 2013, 9999-9999
  4. Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 10 cm Diameter Mono Cast Si Growth and its Characterization. SOLID STATE PHENOMENA 2013, 89-93
  5. MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi, Koichi Kakimoto, Satoshi Nakano. Crystal growth of 50 cm square single crystal Si by directional solidification. Proceedings of CSSC7 2013, 97-100
  6. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method. SOLID STATE PHENOMENA 2013, 94-99
2012
  1. Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura. Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique. MATERIALS SCIENCE FORUM 2012, 133-136
  2. Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si. MATERIALS SCIENCE FORUM 2012, 123-128
  3. Karolin Jiptner, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Takashi Sekiguchi. Effect of Si<sub>3</sub>N<sub>4</sub> Coating on Strain and Fracture of Si Ingots. MATERIALS SCIENCE FORUM 2012, 247-250
  4. Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe. Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction. MATERIALS SCIENCE FORUM 2012, 153-156
  5. JIPTNER, Karolin, FUKUZAWA Masayuki, MIYAMURA, Yoshiji, HARADA, Hirofumi, KAKIMOTO Koichi, SEKIGUCHI, Takashi. Reduction of residual strain in cast-grown Si ingots by heat control in the low temperature region. Reduction of residual strain in cast-grown Si ingots by heat control in the low temperature region 2012, 83-86
  6. Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi. Structural Study of Small Angle Grain Boundaries in Multicrystalline Si. MATERIALS SCIENCE FORUM 2012, 157-160
2011
  1. Tachibana Tomihisa, Sameshima Takashi, Kojima Takuto, Arafune Koji, Kakimoto Koichi, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi, Ohshita Yoshio, Ogura Atshushi. STUDY OF CRYSTALLINE DEFECT GENERATION CAUSED BY LIGHT ELEMENT IMPURITIES IN SILICON SUBSTRATE. Technical digest of PVSEC-21 2011, 2D-1P-15-2D-1P-15
  2. Kazuhiro Kumagai, Yuanzhao Yao, Jun Chen, Takashi Sekiguchi. Image instability during the electrical measurement in scanning electron microscope. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2011, 1407-1411
  3. PAKDEL, Amir, ZHI, Chunyi, BANDO, Yoshio, WATANABE, Kentaro, SEKIGUCHI, Takashi, NAKAYAMA, Tomonobu, GOLBERG, Dmitri. Nonwetting and Optical Properties of Hexagonal Boron Nitride Films. proceedings of M3 2012 2011, 9999-9999
  4. Kazuhiro Kumagai, Takashi Sekiguchi. Secondary electron imaging of titania thin film for surface potential analysis. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2011, 1293-1296
2010
  1. IROKAWA, Yoshihiro, MATSUKI, Nobuyuki, SUMIYA, Masatomo, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro, Sumida Yasunobu, Yoshitaka Nakano. Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2010, 1928-1930
  2. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks. ECS Transcations 2010, 299-313
  3. Ujjal K. Gautam, Yoshio Bando, Pedro M. F. J. Costa, Xiaosheng Fang, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg. Inorganically filled carbon nanotubes: Synthesis and properties. PURE AND APPLIED CHEMISTRY 2010, 2097-2109
  4. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar. Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs. SOLID STATE PHENOMENA 2010, 461-466
  5. SEKIGUCHI, Takashi, LEE, Woong, CHEN, Jun, CHEN, Bin. D-line emission from small angle grain boundaries in multicrystalline Si. Solid state phenomena 2010, 561-565
  6. CHEN, Jun, CHEN, Bin, LEE, Woong, Masayuki Fukuzawa, Masayoshi Yamada, SEKIGUCHI, Takashi. Grain Boundaries in Multicrystalline Si. SOLID STATE PHENOMENA 2010, 19-26
2009
  1. YAO, Yongzhao, OGAKI, Takeshi, MATSUMOTO, Kenji, SAKAGUCHI, Isao, WADA, Yoshiki, HANEDA, Hajime, SEKIGUCHI, Takashi, OHASHI, Naoki. Growth and characterization of isotopic natGa15N by molecular-beam epitaxy. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2009, S707-S710
  2. DIERRE, Benjamin, Yuan, Xiaoli, SEKIGUCHI, Takashi. Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals. MICROELECTRONICS JOURNAL 2009, 262-264
  3. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri. Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films. SUPERLATTICES AND MICROSTRUCTURES 2009, 295-300
  4. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Electron Beam Induced Current Investigation of Stress-Induced Leakage and Breakdown Processes in High-k stacks. IEEE IRPS 2009 Proceedings 2009, 333-338
  5. Ohyanagi Takasumi, CHEN, Bin, SEKIGUCHI, Takashi, Yamaguchi Hirotaka, Hirofumi Matsuhata. EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes. MATERIALS SCIENCE FORUM 2009, 707-710
  6. F.Fabbri, D. Natalini, Anna Cavallini, SEKIGUCHI, Takashi, R. Nipoti, F. Moscatelli. Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes. SUPERLATTICES AND MICROSTRUCTURES 2009, 383-387
  7. YAO, Yongzhao, OGAKI, Takeshi, MATSUMOTO, Kenji, SAKAGUCHI, Isao, WADA, Yoshiki, HANEDA, Hajime, SEKIGUCHI, Takashi, OHASHI, Naoki. Growth and characterization of isotopic natGa15N by molecular-beam epitaxy. Proceedings of SPIE 2009, 72162D-1-72162D-7
  8. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Doping and segregation of impurity atoms in silicon nanowires. PHYSICA B-CONDENSED MATTER 2009, 5200-5202
  9. R.S. Yu, Masaki Maekawa, Atsuo Kawasuso, SEKIGUCHI, Takashi, B.Y. Wang, X.B. Qin, Q.Z. Wang. Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2009, 3097-3099
2008
  1. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Electron-beam-induced current characterization of high-k dielectrics. Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials 2008, 74-77
  2. HUANG, Yang, BANDO, Yoshio, TANG, Chengchun, ZHI, Chunyi, TERAO, Takeshi, SEKIGUCHI, Takashi, GOLBERG, Dmitri. BN MICROTUBES EXHIBITING INTENSE NEAR-BAND-GAP UV EMISSION / BN MICROTUBES EXHIBITING INTENSE NEAR-BAND-GAP UV EMISSION. Proceedings of 2008 International Conference on CARBON 2008, 9999-9999
  3. DIERRE, Benjamin, Yuan, Xiaoli, HIROSAKI, Naoto, XIE, Rong-Jun, SEKIGUCHI, Takashi. Luminescence properties of Ca- and Yb-codoped. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 2008, 80-83
  4. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. CHARACTERIZATION OF LEAKAGE BEHAVIORS OF HIGH-K GATE STACKS BY ELECTRON-BEAM-INDUCED CURRENT. IEEE IRPS 2008 Proceedings 2008, 584-588
  5. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong. Electrical and optical activities of small-angle grain boundaries in multicrystalline silicon. Publication name Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials 2008, 140-143
  6. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Oyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, FILIPPOFabbri. EBIC study of dislocations and stacking faults in 4H-SiC homoepitaxial films. Publication name Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials 2008, 299-303
  7. FUKATA, Naoki, Satoshi Matsushita, Naoya Okada, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Impurity doping in silicon nanowires synthesized by laser ablation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 2008, 589-592
  8. DIERRE, Benjamin, Yuan, Xiaoli, YAO, Yongzhao, YOKOYAMA, Masaaki, SEKIGUCHI, Takashi. Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 2008, S307-S310
  9. IROKAWA, Yoshihiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi. Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2008, 2985-2987
  10. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Akimasa Kinishita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime Okumura. Electron-Beam Induced Current Study of Electrical activity of dislocations in 4H-SiC homoepitaxial films. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 2008, S219-S223
  11. F. Fabbri, A. Cavallini, G. Attolini, F. Rossi, G. Salviati, B. Dierre, N. Fukata, T. Sekiguchi. Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2008, 179-181
2007
  1. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, UMEZAWA, Naoto, OHMORI, Kenji, CHIKYOW, Toyohiro, Hasunuma Ryu, Yamabe Kikuo, Inumiya Seiji, Nara Yasuo. Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique. Solid State Phenomena 2007, 449-454
  2. Yuan, Xiaoli, CHEN, Jun, Ri Sungi , Ito Shun, SEKIGUCHI, Takashi. Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2007, 3030-3036
  3. CHEN, Jun, SEKIGUCHI, Takashi, ITO Shun, YANG Deren. Carrier recombination activities and structural properties of small-angle boundaries in multicrystalline silicon. Solid State Phenomena 2007, 9-14
  4. XIE, Rong-Jun, HIROSAKI, Naoto, INOUE, Kazuo, SEKIGUCHI, Takashi, DIERRE, Benjamin, K.Tamura. Blue-emitting AlN:Eu2+ phosphors for field emission displays. Proceedings of IDW 2007, 891-894
  5. FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation. SOLID STATE PHENOMENA 2007, 553-558
  6. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, Shun Ito, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Carrier doping of silicon nanowires synthesized by laser Ablation. Mater. Res. Soc. Symp. Proc. 2007, 99999-99999
  7. YAO, Yongzhao, SEKIGUCHI, Takashi, SAKUMA, Yoshiki, OHASHI, Naoki. The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH 2007, 521-524
  8. FUKATA, Naoki, S. Matsudhits, CHEN, Jun, SEKIGUCHI, Takashi, K. Murakami. Impurity doping in silicon nanowires. The Forum on the Science and Technology of Silicon Materials 2007 2007, 299-303
  9. FUKATA, Naoki, S. MAtsushita, T. Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, N. Uchida, K. Murakami. Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. PHYSICA B-CONDENSED MATTER 2007, 523-526
  10. CHEN, Jun, SEKIGUCHI, Takashi, Yang Deren. Electron Beam Induced Current Study of Grain Boundaries in Multicrystalline Si. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2007, 2908-2917
2006
  1. OHASHI, Naoki, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime, KOBAYASHI Kazuyoshi, MASUDA Hidetoshi, CHAZONO Hirokazu, FUJIMOTO, Masayuki. ZnO Light-Emission Array Fabricated into Nanometer Scale Pits on Silicon Substrate. Materials Research Society Proceedings 2006, 04.1-04.6
  2. 石川由加里, NIITSUMA, Junichi, 田中滋, 根崎大, 岡本光弘, 山下正史, SEKIGUCHI, Takashi, 柴田典義. Luminescent Characteristics of Undoped and Er-doped ZnO Thin Films. KEY ENGINEERING MATERIALS 2006, 189-192
  3. Yuan, Xiaoli, B.P. Zhang, NIITSUMA, Junichi, SEKIGUCHI, Takashi. Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2006, 146-150
  4. Yuan, Xiaoli, L. Lazzarini, G. Salviati, SEKIGUCHI, Takashi. Cathodoluminescence characterization of SnO2 bicrystal nanoribbons grown by vapor transport technique. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2006, 331-336
  5. NAGATA, Takahiro, PARHAT, AHMET, YAMAUCHI, Yasushi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Three-Dimensional GaN Nano Structure Fabrication by Focused Ion Beam Chemical Vapor Deposition. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2006, 250-252
  6. TANAKAShigeru, ISHIKAWAYukari, OHASHI, Naoki, NIITSUMA, Junichi, SEKIGUCHI, Takashi, SHIBATANoriyoshi. Near-Infrared Light Emission from Er-doped ZnO Thin Film in Micropits. KEY ENGINEERING MATERIALS 2006, 113-116
  7. LI, Jiguang, Wang, Xiaohui, KAMIYAMA, Hiroshi, ISHIGAKI, Takamasa, SEKIGUCHI, Takashi. RF plasma processing of Er-doped TiO2 luminescent nanoparticles. THIN SOLID FILMS 2006, 292-296
  8. Shupingp Li, Zhilai Fang, Hangayng Chen, Jinchai Li, Xiaohong Chen, Yuan, Xiaoli, SEKIGUCHI, Takashi, Qiming Wang, Junyong Kang. Defect influence on luminescence efficiency of GaN-based LEDs. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2006, 371-374
  9. SEKIGUCHI, Takashi, Rakesh, CHANDRA, YAO, Yongzhao, Yuan, Xiaoli, Koichi Tsuji, Kang Junyong. Effect of the oblique excitation and detection on the cathodoluminescence spectra. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2006, 19-24
  10. OGAKI, Takeshi, SUGIMURA, Shigeaki, RYOKEN, Haruki, OHASHI, Naoki, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime. Interfacial structure of GaN and InN thin films grown on ZnO substrate. KEY ENGINEERING MATERIALS 2006, 79-82
2004
  1. OIKAWA, Hidetoshi, 増原陽人, 笠井均, MITSUI, Tadashi, SEKIGUCHI, Takashi, 中西八郎. Organic and Polymer Nanocrystals: Their Optical Properties and Function. Handai Nanophotonics (H. Masuhara and S. Kawata eds.), Elsevier 2004, 205-224
  2. MITSUI, Tadashi, SEKIGUCHI, Takashi. Observation of Polarization Property in Near-field Optical Imaging by a Polarization Maintaining Fiber Probe. Journal of Electron Microscopy 2004, 209-215
  3. Yuan, Xiaoli, SEKIGUCHI, Takashi, 李成奇, 伊藤俊. Electron-beam-induced current analysis of dislocations in strained Si/Si0.8Ge0.2. Proc. of the 4th International Symposium on Advanced Science and Technology of Silicon Materials 2004, 144-151
  4. Y. Nakayama, H. Suzuki, M. Kimura, K. Fujii, H. Ito, SEKIGUCHI, Takashi, OIKAWA, Hidetoshi, NIITSUMA, Junichi, E. Kimura, T. Ushiki. Natural-SEM-CL system for biological application. Proc. of 8th APEM 2004, 163-164
  5. SEKIGUCHI, Takashi, 渡辺義夫. CL characterization of InP nanowires grown on Si substrates. Proc. 8th Asia-Pacific Conf. on Electron Microscopy 2004, 366-367
  6. 謝栄国, SEKIGUCHI, Takashi, CHEN, Jun, 楊徳仁, 伊藤俊. Comparison of Grain Boundaries in Multicrystalline Si Ingot and Artificial Grain Boundaries in Bonded Si Wafers. Proc. of the 4th International Symposium on Advanced Science and Technology of Silicon Materials 2004, 424-428
  7. NIITSUMA, Junichi, OIKAWA, Hidetoshi, SEKIGUCHI, Takashi, 牛木辰男, 木村英二, 山田貴穂, 中山佳彦, 鈴木宏征, 藤井和博, 伊藤寛征. Development of Fluorescent Materials for Bio-Cathodoluminescence. Proceedings of the 8th Asia-Pacific Conference on Electron Microscopy 2004, 165-166

Presentations TSV

2018
  1. 陳 君, イ ウェイ, ジョ ユージン, 木村 隆, 関口 隆史, 埋橋 淳, 宝野 和博, 大久保 忠勝, Shinya Takashima, Masaharu Edo. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  2. イ ウェイ, 陳 君, 木村 隆, 埋橋 淳, Tetsuya Takeuchi, Satoshi Kamiyama, 大久保 忠勝, 宝野 和博, 関口 隆史. Cathodoluminescence Characterization of Core-shell GaN Nanowires. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  3. 陳 君, イ ウェイ, 木村 隆, 生田目 俊秀, 関口 隆史. Wafer-Scale Analysis of GaN by Imaging CL Technique. The International Workshop on Nitride Semiconductors (IWN2018). 2018
  4. YI, Wei, CHEN, Jun, Shun Ito, TANG, Daiming, CHO, Yujin, OSHIMA, Yuichi, SEKIGUCHI, Takashi. Cathodoluminescence study of stacking faults and dislocations in bulk GaN. 19th International Microscopy Congress. 2018
  5. Shun Ito, CHEN, Jun, YI, Wei, Peng Wang, SEKIGUCHI, Takashi. Investigation of the electrical and optical properties of dislocations in SrTiO3 by EBIC/CL. The 14th BIAMS Conference. 2018
  6. CHEN, Jun, SEKIGUCHI, Takashi. APPLICATIONS OF EBIC IN SEMICONDUCTOR RESEARCH. MPM3. 2018
  7. CHEN, Jun, YI, Wei, SEKIGUCHI, Takashi, Kozo Fujiwara . INVESTIGATION OF SILICON DENDRITES BY ELECTRON-BEAM-INDUCED CURRENT. CSSC10. 2018
  8. 角谷 正友, 福田 清貴, 上田 茂典, 浅井 祐哉, ジョ ユージン, 関口 隆史, 上殿明良, 尾沼猛儀, サン リウエン, 山口智広, 本田徹. III-V 族窒化物の価電子帯構造およびギャップ内準位の評価. 第65回応用物理学会春季学術講演会. 2018
  9. イ ウェイ, 陳 君, 関口 隆史, 伊藤俊. カソードルミネッセンスによるm面GaNの積層欠陥に関する評価. 第65回応用物理学会春季学術講演会. 2018
  10. ジョ ユージン, 武田 隆史, 高橋 向星, 木村 隆, 解 栄軍, 廣崎 尚登, 関口 隆史. Effect of Mn-doping on the properties of Mn, Mg-codopedγ-AlON green phosphor. JSAP spring meeting 2018. 2018
  11. 陳 君, イ ウェイ, 関口 隆史, 生田目 俊秀, 江戸雅晴. 電子線誘起電流法によるGaN Schottky領域の転位と電流リーク箇所の観察. 第65回応用物理学会春季学術講演会. 2018
2017
  1. CHO, Yujin, YAO, Yuanzhao, LUO, Xianjia, KIMURA, Takashi, SEKIGUCHI, Takashi. Cathodoluminescence properties of pn junctions in GaN using oblique cutting methods. Defects-Recognition, Imaging and Physics in Semiconductors. 2017
  2. CHEN, Jun, YI, Wei, CHO, Yujin, NABATAME, Toshihide, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Investigation of GaN MIS Interfaces by Electron-beam-induced Current. The 17th conference on Defects-Recognition, Imaging and Physics . 2017
  3. SEKIGUCHI, Takashi, KIMURA, Takashi, LUO, Xianjia, CHO, Yujin, MITSUISHI, Kazutaka, OHKUBO, Tadakatsu, UZUHASHI, Jun, HONO, Kazuhiro, Masaharu Edo, Shinya Takashima. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. DRIP XVII (Defects-Recognition, Imaging and Physics in Semicondu. 2017
  4. AGEMURA, Toshihide, KIMURA, Takashi, IWAI, Hideo, SEKIGUCHI, Takashi. Secondary electron imaging of Si device structures using fountain. GADEST2017. 2017
  5. SEKIGUCHI, Takashi, PRAKASH, Ronit Roneel, LUO, Xianjia, JIPTNER, Karolin, CHEN, Jun. Statistical consideration on the grain boundary evolution in multicrystalline Si. GADEST2017. 2017
  6. 秋元 創, 竹口 雅樹, 関口 隆史, 橋本 綾子. ガス雰囲気下加熱TEM試料ホルダーの開発. NIMS-TIMS合同ポスター発表会. 2017
  7. 秋元 創, 竹口 雅樹, 関口 隆史, 橋本 綾子. ガス雰囲気下加熱TEM試料ホルダーの開発. 第78回 応用物理学会 秋季学術講演会. 2017
  8. CHO, Yujin, Benjamin Dierre, TAKEDA, Takashi, XIE, Rong-Jun, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Advanced Cathodoluminescence techniques for Single fluorescent particles Analysis. Joint Symposium on Electronic Materials. 2017
  9. CHEN, Jun, Shun Ito, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. EBIC/CL Study of SrTiO3. Collaborative Conference on Materials Research (CCMR) 2017. 2017
  10. CHO, Yujin, LUO, Xianjia, KIMURA, Takashi, SEKIGUCHI, Takashi. Cathodoluminescence study of pn junctions and heterointefaces in GaN . Collaborative Conference on Materials Research (CCMR) 2017. 2017
  11. 関口 隆史. 半導体材料のカソードルミネッセンス・電子線誘起電流による機能評価. 日本顕微鏡学会第73回学術講演会. 2017
  12. 関口 隆史, 揚村 寿英, 岩井 秀夫. 倒立型噴水検出器によるナノシートの低エネルギー透過電子像観察. 日本顕微鏡学会第73回学術講演会. 2017
  13. 関口 隆史, 木村 隆, 羅 顕佳, ジョ ユージン. 斜め研磨を用いたGaN材料の断面カソードルミネッセンス観察. 日本顕微鏡学会第73回学術講演会. 2017
  14. SEKIGUCHI, Takashi. SEM Cathodoluminescence/EBIC study of widegap semiconductors and devices. Microscopy of Semiconducting Materials (MSM XX). 2017
  15. AGEMURA, Toshihide, IWAI, Hideo, SEKIGUCHI, Takashi. Low energy secondary electron imaging of pn junctions in Si and GaN using fountain detector. Microscopy of Semiconducting Materials (MSM-XX). 2017
  16. 関口 隆史, 岩井 秀夫, 揚村 寿英, 木村 隆. 斜め研磨を用いたGaN表面近傍のカソードルミネッセンス観察. 第64回応用物理学会春季学術講演会. 2017
  17. 武田 隆史, 解 栄軍, ジョ ユージン, 高橋 向星, 関口 隆史, 小山 幸典, 廣崎 尚登. 不純物制御したBNからの近紫外線発光(I)合成と発光特性. 第64回応用物理学会春季学術講演会. 2017
  18. 陳 君, 伊藤俊, 関口 隆史, 知京 豊裕. カソードルミネッセンス法によるSrTiO3の酸素欠損評価. 第64回応用物理学会春季学術講演会 . 2017
  19. 岩井 秀夫, 揚村 寿英, 木村 隆, 関口 隆史. アウトレンズタイプSEM用低エネルギーSE検出器の開発と応用例. 共用・計測合同 シンポジウム2017. 2017
  20. CHEN, Jun, Jianyong Li, Shun Ito, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. CL/EBIC/TEM Study of Nb-doped SrTiO3 Single Crystal. MANA International Symposium 2017. 2017
2016
  1. AGEMURA, Toshihide, IWAI, Hideo, KIMURA, Takashi, SEKIGUCHI, Takashi. Development of low energy SE detector for out-lens type SEMs and its applications. PSA-16. 2016
  2. 羅 顕佳, 大島 祐一, ジョ ユージン, 関口 隆史. カソードルミネッセンスによってGa-とN-GaNの貫通転位の分類. The 77rd JSAP Autumn Meeting, 2016. 2016
  3. SEKIGUCHI, Takashi. Cathodoluminescence and EBIC study of widegap semiconductors and devices. 16th Europeal Microscopy Congress. 2016
  4. 秋元 創, 橋本 綾子, 竹口 雅樹, 関口 隆史. ガス雰囲気下でのグラフェン-金属ナノ粒子のin-situ観察に向けた TEM試料ホルダーの開発. TIAナノグリーン・サマースクール. 2016
  5. 関口 隆史, 臼井和也, 伊藤学, 井本勇吉, 佐藤寿和, 本郷健一, 伊藤俊. 噴水検出器用曲面バイアスグリッドの製作. 日本顕微鏡学会第72回学術講演会. 2016
  6. 揚村 寿英, 岩井 秀夫, 関口 隆史. アウトレンズ型低エネルギー二次電子検出器の開発 (II). 日本顕微鏡学会第72回学術講演会. 2016
  7. 関口 隆史, 岩井 秀夫, 揚村 寿英, 木村 隆. 噴水検出器による半導体・金属・絶縁体の二次電子観察. 日本顕微鏡学会第72回学術講演会. 2016
  8. CHO, Yujin, TAKAHASHI, Kohsei, TAKEDA, Takashi, XIE, Rong-Jun, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Cross-sectional CL observation for Oxynitride phosphors. Beam Injection Assessment of Microstructure in Semiconductor . 2016
  9. SEKIGUCHI, Takashi, IWAI, Hideo, KIMURA, Takashi, AGEMURA, Toshihide. Fountain Detectors Are Go - Low Energy Secondary Electron Imaging for Various Semiconductors. BIAMS2016. 2016
  10. AGEMURA, Toshihide, IWAI, Hideo, KIMURA, Takashi, SEKIGUCHI, Takashi. Development of a low energy secondary electron detector for out-lens SEM and its application of semiconductor heterostructures. BIAMS2016. 2016
  11. SEKIGUCHI, Takashi, OSHIMA, Yuichi, CHO, Yujin, LUO, Xianjia. Cathodoluminescence Classification of Threading Dislocations in bulk GaN. BIAMS2016. 2016
  12. CHEN, Jun, Shun Ito, Jianyong Li, LUO, Xianjia, SEKIGUCHI, Takashi. EBIC Investigation of Dislocation Loops in SrTiO3. The 13th International Conference BIAMS . 2016
  13. 関口 隆史. カソードルミネッセンスを使ったGaN材料・デバイスの評価. 学振第151委員会研究会. 2016
  14. CHIKYOW, Toyohiro, NGUYEN, Nam, MATSUDA, Asahiko, YAYAMA, Tomoe, NAGATA, Takahiro, CHO, Yujin, SEKIGUCHI, Takashi, Uesugi Kenjiro, Nunoue Shinya, Fukushima Noboru, Teramoto Takashi, Christian Dussarrat, Kimura Takako. Epitaxial grwoth of GaN on Si with buffers for future devioces. INC12. 2016
  15. 羅 顕佳, 陳 君, 関口 隆史. Investigation of Σ3 Generation on Random Grain Boundary in Multicrystalline Silicon. The 63rd JSAP Spring Meeting, 2016. 2016
  16. 関口 隆史, 木村 隆, 岩井 秀夫. 噴水型低エネルギー二次電子検出器による金属合金の観察. 第63回応用物理学会春季学術講演会. 2016
  17. 陳 君, 李建永, 伊藤俊, 羅 顕佳, 関口 隆史. SrTiO3 抵抗スイッチング挙動とNbドーピングの関係. 第63回応用物理学会春季学術講演会. 2016
  18. アルジョカ ステリアン, ビジョラ ガルシア, 猪股 大介, 新井 祐輔, ジョ ユージン, 関口 隆史, 島村 清史. Ce:YAG single-crystal powder phosphors for white LEDs. 日本セラミックス協会2016年年会. 2016
  19. 瀬川 浩代, ジョ ユージン, 関口 隆史, 廣崎 尚登. ソーダボロシリケートガラス中でのSiAlON蛍光体の発光特性変化. 日本セラミックス協会2016年年会. 2016
  20. 関口 隆史. カソードルミネッセンス・電子線誘起電流(EBIC)−光や誘起電流で半導体材料・素子の機能を評価する−. SEMの物理学分科会研究会. 2016
  21. 関口 隆史. 最近の走査電子顕微鏡の進化と噴水型二次電子検出器の提案. 第46回表面分析研究会. 2016
2015
  1. CHEN, Jun, SEKIGUCHI, Takashi. The transition of resistance switching mode in SrTiO3 by Nb doping. 25th Annual Meeting of MRS-J (2015). 2015
  2. 関口 隆史. 低エネルギー二次電子検出器の開発と像観察. 第7回電子線応用技術研究会. 2015
  3. SEKIGUCHI, Takashi, IWAI, Hideo, Agemura Toshihide, KIMURA, Takashi. Low Energy Secondary Electron Imaging for Various Semiconductors using Fountain Detector. EAMC2. 2015
  4. CHO, Yujin, DIERRE, Benjamin, TAKAHASHI, Kohsei, TAKEDA, Takashi, FUKATA, Naoki, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Improvement of luminescence properties and particle growth of AlN phosphors by Si-doping. ECS 228th Meeting. 2015
  5. JIPTNER, Karolin, Bing Gao, Hirofumi Harada, MIYAMURA, Yoshiji, Koichi Kakimoto, SEKIGUCHI, Takashi. Interaction of dislocations in Si growth by directional solidification based on crystallographic orientation: experiment and simulation. European PV Solar Energy Conference and Exhibition. 2015
  6. 関口 隆史, 岩井 秀夫, 木村 隆. 噴水型低エネルギー二次電子検出器による半導体pn接合の観察. 2015年 第76回応用物理学会秋季学術講演会. 2015
  7. ジョ ユージン, 湯 代明, ディエール バンジャマン, 高橋 向星, 廣崎 尚登, 関口 隆史. TEM and CL analysis of Si-doped AlN powders. The 76th JSAP Autumn meeting. 2015
  8. CHEN, Jun, SEKIGUCHI, Takashi, Jianyong Li, Shun Ito . Investigation of dislocations in different Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching . The 16th DRIP conference. 2015
  9. LUO, Xianjia, PRAKASH, Ronit Roneel, CHEN, Jun, JIPTNER, Karolin, SEKIGUCHI, Takashi. Investigation of Σ3 Generation on Radom Grain Boundary in Multicrystalline Silicon. The 16th DRIP conference. 2015
  10. SEKIGUCHI, Takashi, IWAI, Hideo, KIMURA, Takashi. SEM observation of p-n junction in semiconductors using fountain secondary electron detector. DRIP16. 2015
  11. CHO, Yujin, DIERRE, Benjamin, TAKAHASHI, Kohsei, FUKATA, Naoki, TAKEDA, Takashi, HIROSAKI, Naoto, SEKIGUCHI, Takashi. What about doping Si into AlN powder?. Joint Symposium on Electronic Materials 2015 (JSEM2015). 2015
  12. CHO, Yujin, TAKAHASHI, Kohsei, DIERRE, Benjamin, TAKEDA, Takashi, HIROSAKI, Naoto, SEKIGUCHI, Takashi. A comparison between GPS and HIP methods for Si-doped AlN powders synthesis. Phosphor safari 2015. 2015
  13. 関口 隆史. SEMの二次電子検出器-何をどう見るか. 学振132委員会/ 第216研究会. 2015
  14. 関口 隆史, 岩井 秀夫. アウトレンズ型低エネルギー二次電子検出器を用いた像観察と二次電子スペクトル. 日本顕微鏡学会第71回学術講演会. 2015
  15. 関口 隆史, 岩井 秀夫. アウトレンズ型低エネルギー二次電子検出器の開発. 日本顕微鏡学会第71回学術講演会. 2015
  16. CHO, Yujin, DIERRE, Benjamin, TAKAHASHI, Kohsei, FUKATA, Naoki, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Enhancement of particle growth and luminescence of AlN by Si-doping. INC11. 2015
  17. MIYAMURA, Yoshiji, SEKIGUCHI, Takashi, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, PRAKASH, Ronit Roneel, Satoshi Nakano, Koichi Kakimoto. Single Seed Cast Si growth of 50 cm square ingots. 8th Int. Workshop on Crystak Silicon for Solar Cells . 2015
  18. PRAKASH, Ronit Roneel, JIPTNER, Karolin, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi. Grain Boundary Evolution in Multicrystalline Silicon Grown from Microcrystalline Silicon Template. 8th Int. Workshop on Crystak Silicon for Solar Cells . 2015
  19. ジョ ユージン, 高橋 向星, ディエール バンジャマン, 解 栄軍, 廣崎 尚登, 関口 隆史. Microscopic approach for optimizing the growth conditions of LaAl(Si6-zAlz)(N10-zOz)(z~1):Ce3+ blue phosphor . The 62nd JSAP spring meeting. 2015
  20. プラカッシュ ロニト ロニル, イプトナー カロリン, 宮村 佳児, 陳 君, 原田 博文, 関口 隆史. Impact of Grain Boundary Interactions on Grain Structure of Multicrystalline Silicon. The 62nd JSAP Spring Meeting. 2015
  21. 豊満 直樹, 原田 善之, サン リウエン, 関口 隆史, 山口智広, 本田徹, 角谷 正友. InGaN薄膜表面に形成されたピットのCLと不純物との相関. 第62回応用物理学会春季学術講演会. 2015
  22. 陳 君, 李建永, 伊藤俊, 関口 隆史. SrTiO3電気抵抗スイッチングに関する転位の影響. 第62回応用物理学会春季学術講演会. 2015
  23. 高橋 向星, ジョ ユージン, 武田 隆史, 舟橋 司朗, 解 栄軍, 関口 隆史, 廣崎 尚登, 高橋向星. 粉末合成したA3B8X12型新緑色窒化物蛍光体のカソードルミネッセンス観察. 2015年 第62回応用物理学会春季学術講演会. 2015
  24. 中浦 拓也, 原田 善之, 長田 貴弘, 関口 隆史, 知京 豊裕, 鈴木 摂, 石垣 隆正, 角谷 正友. MOCVD法を用いて成長したNドープZnO膜のアニール効果. 第62回応用物理学会春季学術講演会. 2015
  25. JIPTNER, Karolin, Bing Gao, Hirofumi Harada, MIYAMURA, Yoshiji, Koichi Kakimoto, SEKIGUCHI, Takashi. Dislocation structures in Si for photovoltaic application. MANA International Symposium 2015. 2015
2014
  1. PRAKASH, Ronit Roneel, JIPTNER, Karolin, MIYAMURA, Yoshiji, CHEN, Jun, HARADA, Hirofumi, SEKIGUCHI, Takashi. Impact of Growth Rate on Multicrystalline Silicon Grown from Small Randomly Oriented Seeds. The 6th World Conference on Photovoltaic Energy Conversion. 2014
  2. 宮村佳児, 原田博文, JIPTNERKarolin, 関口隆史, S. Nakano, K. Kakimoto. Improvement of 50cm square mono cast Si for solar cell application. WCPEC-6. 2014
  3. CHO, Yujin, DIERRE, Benjamin, TAKEDA, Takashi, TAKAHASHI, Kohsei, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Effect of Si-doping on the luminescence and particle growth of AlN phosphors. The phosphor safari 2014. 2014
  4. PRAKASHRonit Roneel, JIPTNERKarolin, 陳君, 宮村佳児, 原田博文, 関口隆史. Extended Defects in multicrystalline silicon grown by directional solidification using polycrystalline template. The 7th forum on the Science and Technology of Silicon Materials. 2014
  5. JIPTNER, Karolin, Bing Gao, HARADA, Hirofumi, Masayuki Fukuzawa, MIYAMURA, Yoshiji, Koichi Kakimoto, SEKIGUCHI, Takashi. Residual strain and dislocations in directional solidified Si ingots analyzed using FZ single crystals. 9th European PV Solar Energy Conference and Exhibition (EUPVSEC. 2014
  6. 陳 君, 李建永, イ ウェイ, 小椋厚志, 関口 隆史. 電子線誘起電流法によるSrTiO3結晶中の転位の電気特性評価. 第75回応用物理学会秋季学術講演会. 2014
  7. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 原田 博文, 関口 隆史. Grain Boundary Electrical Activity and Growth in Multicrystalline Silicon. The 75th JSAP Autumn Meeting 2014. 2014
  8. 宮村 佳児, 原田 博文, 関口 隆史, 中野 智, 柿本 浩一. mono Si 結晶表面の晶癖線. 第75 回応用物理学会秋季学術講演会. 2014
  9. 高橋 向星, ディエール バンジャマン, ジョ ユージン, 関口 隆史, 武田 隆史, 解 栄軍, 廣崎 尚登. LaAl(Si6-zAlz)(N10-zOz) (z~1) : Ce3+青色蛍光体のカソードルミネッセンス解析. 第75回応用物理学会秋季学術講演会. 2014
  10. ジョ ユージン, ディエール バンジャマン, 武田 隆史, 深田 直樹, 廣崎 尚登, 関口 隆史. Conditions and mechanism for crystal growth of Si-doped AlN powders. The 75th JSAP fall meeting. 2014
  11. 王 暁君, 解 栄軍, B. Dierre, 武田 隆史, 末廣 隆之, 廣崎 尚登, 関口 隆史. AlN:Mn2+のカソードルミネッセンス. 第75回応用物理学会秋季学術講演会. 2014
  12. 関口 隆史. EBICによるワイドギャップ半導体結晶欠陥評価. 第2回「つくば連携研究」合同研究会. 2014
  13. PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi. Evolution of grain boundaries in multicrystalline Si ingots grown by cast method. 24th WS of Crystal Si Solar Cells & Modules. 2014
  14. TAKAHASHI, Kohsei, DIERRE, Benjamin, CHO, Yujin, SEKIGUCHI, Takashi, XIE, Rong-Jun, HIROSAKI, Naoto. Cathodoluminescence Analysis of LaAl(Si6-zAlz)(N10-zOz) (z~1) : Ce3+ Blue Phosphor. BIAMS12. 2014
  15. FUKATA, Naoki, SEKIGUCHI, Takashi, BANDO, Yoshio, YU, Mingke, JEVASUWAN, Wipakorn, Kouichi Murakami, Zhong Lin Wang. Doping and characterization of impurity atoms in Si and Ge nanowires. BIAMS 12. 2014
  16. CHO, Yujin, DIERRE, Benjamin, TAKEDA, Takashi, TAKAHASHI, Kohsei, FUKATA, Naoki, HIROSAKI, Naoto, SEKIGUCHI, Takashi. Defect evolution in AlN particle with Si-doping. BIAMS12. 2014
  17. JIPTNER, Karolin, Bing Gao, HARADA, Hirofumi, MIYAMURA, Yoshiji, PRAKASH, Ronit Roneel, Masayuki Fukuzawa, Tomihisa Tachibana, Takuto Kojima, Koichi Kakimoto, SEKIGUCHI, Takashi. Correlation between residual strain and dislocation density in silicon cast growth determined by SIRP and XRT. Beam Injection Assessment in Semiconductor Materials 12. 2014
  18. CHEN, Jun, LI, Jian-Yong, SEKIGUCHI, Takashi. Electron-beam-induced current study of dislocation related defects in (111) SrTiO3 single crystals. The 12th BIAMS Conference. 2014
  19. CHEN, Jun, Masayuki Fukuzawa, GAO, Hong, Deren Yang, SEKIGUCHI, Takashi. Characterization of Strain in Multicrystalline Silicon: Correlation between Grain Boundary Character and Strain. The 12th BIAMS Conference. 2014
  20. SEKIGUCHI, Takashi. Direct visualization of defects in gate stack structures by EBIC. TIA-LETIセミナー. 2014
  21. 関口 隆史. SN 離型材の評価. NIMS-DENKA次世代材料研究センター 第2回 連携推進会議. 2014
  22. XIE, Rong-Jun, HIROSAKI, Naoto, TAKEDA, Takashi, SUEHIRO, Takayuki, Benjamin Dierre, SEKIGUCHI, Takashi. Cathodoluminescence and applications of nitride phosphors. 4th International Symposiums on SiAlONs and Non-oxides. 2014
  23. 渡辺 健太郎, 馬場 正和, 野久尾 毅, 関口 隆史, 山根 久典, 末益 崇. Probe-EBIC法によるSi基板上BaSi2薄膜の少数キャリア拡散長評価. 日本顕微鏡学会 第70回学術講演会. 2014
  24. ジョ ユージン, ディエール バンジャマン, 武田 隆史, 高橋 向星, 深田 直樹, 廣崎 尚登, 関口 隆史. Influence of Si-doping on the luminescence and defect evolution of AlN. The 61st JSAP spring meeting. 2014
  25. イプトナー カロリン, Bing Gao, 宮村 佳児, 原田 博文, 柿本浩一, 関口 隆史. Thermal stress induced dislocation distribution in seed-cast and CZ Si ingots. 第61回応用物理学会春季学術講演会 . 2014
  26. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. ナノプローブCL法によるZnOナノロッドの曲げ変形とバンドギャップの歪シフトのその場評価. 2014年春季&lt;第61回&gt;応用物理学会. 2014
  27. 陳 君, 福澤理行, プラカッシュ ロニト ロニル, 李 建永, イプトナー カロリン, 宮村 佳児, 原田 博文, 関口 隆史. 多結晶シリコン中粒界性格と歪みの関係. 第61回応用物理学会春季学術講演会. 2014
  28. 宮村 佳児, 原田 博文, 陳 君, 関口 隆史, 中野 智, 柿本浩一. 50cm 角mono cast Si 結晶成長 (Ⅱ). 第61 回応用物理学会春季学術講演会. 2014
  29. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Grain Evolution in Multicrystalline Silicon Grown from Small Randomly Oriented Seeds. 61st JSAP Spring Meeting 2014. 2014
  30. FUKATA, Naoki, MITOME, Masanori, SEKIGUCHI, Takashi, BANDO, Yoshio, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert Snyder. Characterization of selective doping and stress in Si/Ge and Ge/Si core-shell nanowires. TNT Japan. 2014
2013
  1. ジョ ユージン, ディエール バンジャマン, 武田 隆史, 廣崎 尚登, 高橋 向星, 深田 直樹, 関口 隆史. Defects dependence in AlN with Si doping. 10th Materials Science School for Young Scientists. 2013
  2. FUKATA, Naoki, MITOME, Masanori, SEKIGUCHI, Takashi, BANDO, Yoshio, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert Snyder. Characterization of selective doping and stress in Si/Ge and Ge/Si core-shell nanowires. NANOWIRES2013. 2013
  3. WATANABE, Kentaro, OH, Seungjun, VOLK, Janos, NAGATA, Takahiro, WAKAYAMA, Yutaka, SEKIGUCHI, Takashi. Growth history of ZnO nanorods visualized by cathodoluminescence technique. ACSIN-12/ICSPM21. 2013
  4. PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, JIPTNER, Karolin, MIYAMURA, Yoshiji, CHEN, Jun, LI, Jian-Yong, HARADA, Hirofumi, CHEN Jun. Directional Growth of Multicrystalline Silicon from Crucible and Microcrystal Template. 7th International Workshop on Crystalline Silicon Solar Cells. 2013
  5. 渡辺 健太郎, オウ セウンジン, フォルク ヤノシュ, 長田 貴弘, 若山 裕, 関口 隆史. 溶液成長ZnOナノロッドの成長異方性と電気特性. 2013年秋季&lt;第74回&gt;応用物理学会. 2013
  6. 渡辺 健太郎, 馬場 正和, 野久尾 毅, 関口 隆史, 末益 崇. Si(111)基板上BaSi2薄膜の接合・結晶粒の電気特性. 2013年秋季&lt;第74回&gt;応用物理学会. 2013
  7. 陳 斌, 関口 隆史, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Effect of Transition Metal Impurities on the Defects in 4H-SiC: Insights from EBIC/CL Characterization . 2013 JSAP-MRS. 2013
  8. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Directional Growth of Multicrystalline Silicon from Microcrystal Feedstock. JSAP Autumn Meeting 2013. 2013
  9. サン リウエン, 廖 梅勇, リャン チーフェン, 竹口 雅樹, ディエール バンジャマン, 関口 隆史, 小出 康夫, 角谷 正友. Multilevel intermediate-band solar cells based on III-Nitrides. 2013年 第74回応用物理学会秋季学術講演会. 2013
  10. ジョ ユージン, ディエール バンジャマン, 武田 隆史, 高橋 向星, 深田 直樹, 廣崎 尚登, 関口 隆史. Structural and optical properties of Si3N4-doped AlN as UV emitters . JSAP Autumn Meeting 2013. 2013
  11. MIYAMURA, Yoshiji, CHEN, Jun, PRAKASH, Ronit Roneel, JIPTNER, Karolin, HARADA, Hirofumi, SEKIGUCHI, Takashi. Dislocation generation and propagation across the grain boundaries and seed interfaces in cast Si. Defects Recognition, Imaging and Physics in Semiconductors. 2013
  12. SEKIGUCHI, Takashi, LI, Jian-Yong, CHEN, Jun, WATANABE, Kentaro, KUMAGAI, Kazuhiro, Atsushi Oguira. Focused Ion Beam Imaging of Defects in Si Materials for Photovoltaic and Semiconductor Use. Defects Recognition, Imaging and Physics in Semiconductors. 2013
  13. SEKIGUCHI, Takashi. Material Science in Tsukuba / Activity of NIMS and Tsukuba Innovation Arena. Joint Symposium on Electronic Materials 2013. 2013
  14. CHO, Yujin, DIERRE, Benjamin, TAKEDA, Takashi, TAKAHASHI, Kohsei, HIROSAKI, Naoto, FUKATA, Naoki, SEKIGUCHI, Takashi. Influence of Si-doping on the structure and optical properties of AlN. The 16th Joint Symposium on Electronic Materials. 2013
  15. MIYAMURA, Yoshiji, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, PRAKASH, Ronit Roneel, Satoshi Nakano, SEKIGUCHI, Takashi, Bin Gao, Koichi Kakimoto. Crystal growth of 50 cm square single crystal Si by directional solidification and its characterization . 17th International Conference on Crystal Growth and Epitaxy - IC. 2013
  16. PRAKASHRonit Roneel, 関口隆史, JIPTNERKarolin, 宮村佳児, 陳君, Kakimoto Koichi, 原田博文. Modelling of Unidirectional Solidification of Multicrystalline Si. 17th International Conference on Crystal Growth and Epitaxy . 2013
  17. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi. Estimation of Energy Acceptance of Secondary Electron Detectors in Scanning Electron Microscopy. Microscopy & Microanalysis. 2013
  18. FUKATA, Naoki, KAMINAGA, Jun, SEKIGUCHI, Takashi, HISHITA, Shunichi, Kouichi Murakami. Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires. ICDS27. 2013
  19. WATANABE, Kentaro, VOLK, Janos, OH, Seungjun, NAGATA, Takahiro, WAKAYAMA, Yutaka, SEKIGUCHI, Takashi. Growth history of individual ZnO nanorod visualized by cathodoluminescence technique. NIMS Conference 2013. 2013
  20. 渡辺 健太郎, 馬場 正和, 野久尾 毅, 関口 隆史, 山根 久典, 末益 崇. Probe-EBIC法によるSi(111)基板上BaSi2薄膜の接合・結晶粒評価. 日本顕微鏡学会 第69回学術講演会. 2013
  21. 関口 隆史, 渡辺 健太郎, 熊谷 和博, 片根 純一, 小室 浩之, 平島 智康, 坂上 万里, 伊東 祐博. SEMの像観察用検出器を用いたGaN材料のカソードルミ. 日本顕微鏡学会 第69回学術講演会 . 2013
  22. 熊谷 和博, 関口 隆史. Si基板上の組成傾斜をもつ金属薄膜の二次電子像コントラスト形成 . 日本顕微鏡学会 第69回学術講演会 . 2013
  23. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. CL法によるZnOナノワイヤの成長機構の評価. 日本顕微鏡学会 第69回学術講演会. 2013
  24. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, CHEN, Jun, NGUYEN, Nam, SEKIGUCHI, Takashi, YAMASHITA, Yoshiyuki, YAGYU, Shinjiro, YOSHITAKE, Michiko, NGUYEN Nam. New materials discovery and their application for future nano electronics. INC9. 2013
  25. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Grain Growth Behavior of Directionally Grown Multicrystalline Silicon. 60th JSAP Spring Meeting 2013. 2013
  26. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. 極低温ナノプローブCL法によるZnOナノワイヤの光学・電気特性評価. 2013年春季&lt;第60回&gt;応用物理学会. 2013
  27. 宮村 佳児, 原田 博文, 関口 隆史, 中野智, 柿本浩一. 50cm 角mono cast Si 結晶成長. 第60 回応用物理学会春季学術講演会. 2013
  28. 陳 君, プラカッシュ ロニト ロニル, 李 建永, イプトナー カロリン, 宮村 佳児, 原田 博文, 関口 隆史. 多結晶シリコン中転位分布の不均一性の解析. 第60回応用物理学会春季学術講演会 . 2013
  29. 渡辺 健太郎, 馬場 正和, 関口 隆史, 山根 久典, 末益 崇. Probe-EBIC法によるSi(111)基板上BaSi2薄膜の接合・結晶粒評価. 2013年春季&lt;第60回&gt;応用物理学会. 2013
  30. 神永 惇, 滝口亮, 鈴木 慶太郎, 菱田 俊一, 関口 隆史, 村上浩一, 深田 直樹. シリコンナノワイヤ中のP原子の熱酸化過程での偏析挙動. 第60回応用物理学会春季学術講演会. 2013
  31. 知京 豊裕, 長田 貴弘, 生田目 俊秀, 山下 良之, 関口 隆史, 陳 君, Yongxun Lui, 昌原明植. ナノスケール機能性酸化物の多様性と次世代デバイスへの期待. 第60回応用物理学会春季学術講演会. 2013
  32. イプトナー カロリン, 福澤理行, 宮村 佳児, 原田 博文, 柿本浩一, 関口 隆史. シードキャストシリコンインゴット中の残留歪の評価. 2013年 第60回応用物理学会春季学術講演会. 2013
  33. 関口 隆史. SEMを用いた半導体材料の電気的・光学的特性評価−EBIC/CL. 第2回「微量元素分析・マッピング技術」研究会. 2013
  34. 関口 隆史. 太陽電池用多結晶シリコン中の粒界と金属不純物の関係−EBIC/CLによる評価. 専門研究会「シリコン太陽電池の金属不純物評価とゲッタリング技術」. 2013
  35. SOMU, Kumaragurubaran, CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, YAGYU, Shinjiro, CHEN, Jun, SEKIGUCHI, Takashi. COMBINATORIAL MATERIALS EXPLORATION FOR THE GATE STACK IN ADVANCED CMOS DEVICES. Second international workshop on advanced functional nanomateria. 2013
2012
  1. CHIKYOW, Toyohiro, OHI, Akihiko, NABATAME, Toshihide, NAGATA, Takahiro, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi, OHMORI, Kenji. COMBINATORIAL MATERIALS EXPLORATION ON HIGH-K GATE OXIDE AND METAL GATE FOR FUTURE CMOS DEVICES. ISAEM-2012 -AMDI-3. 2012
  2. CHEN, Jun, LI, Jian-Yong, SEKIGUCHI, Takashi. Investigation of resistance switching mechanism in Pt/SrTiO3 Schottky junction by an electron-beam-induced current technique. ICEAN-2012. 2012
  3. TAKADA, Kazunori, XU, Xiaoxiong, FUKUDA, Katsutoshi, KUMAGAI, Kazuhiro, WATANABE, Ken, AKATSUKA, Kosho, HANG, Buithi, OSADA, Minoru, SAKAGUCHI, Isao, OHNISHI, Tsuyoshi, SEKIGUCHI, Takashi, SASAKI, Takayoshi. Interface structures in solid-state lithium batteries with sulfide electrolytes . PRiME 2012. 2012
  4. MIYAMURA, Yoshiji, CHEN, Jun, CHEN, Bin, HARADA, Hirofumi, Shun Ito, SEKIGUCHI, Takashi. Characterization of grain boundaries in multicrystalline Si ingots. CSSC6. 2012
  5. MIYAMURA, Yoshiji, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, LI, Jian-Yong, PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura , Masayuki Fukuzawa, Satoshi Nakano, Bin Gao, Koichi Kakimoto. 10 cm diameter mono cast Si growth and its characterization. CSSC6. 2012
  6. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoyuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Observation of Leakage Sites in High-k Gate Stack by Using an Electron-Beam-Induced Current Technique . IUMRS- ICEM2012. 2012
  7. XU, Xiaoxiong, TAKADA, Kazunori, FUKUDA, Katsutoshi, KUMAGAI, Kazuhiro, WATANABE, Ken, AKATSUKA, Kosho, HANG, Buithi, OSADA, Minoru, SAKAGUCHI, Isao, OHNISHI, Tsuyoshi, SEKIGUCHI, Takashi, SASAKI, Takayoshi. Improved rate capability at cathode interface in solid-state lithium batteries with sulfide electrolytes. IUMRS-ICEM2012. 2012
  8. 神永惇, 鈴木慶太郎, 深田 直樹, 菱田 俊一, 関口 隆史, 村上浩一. Siナノワイヤの結晶性回復と不純物の活性化. 秋季第72回応用物理学会学術講演会. 2012
  9. 李 雄, 渡辺 健太郎, 熊谷 和博, 関口 隆史. カソードルミネッセンスによるGaN厚膜の成長評価. 応用物理学会. 2012
  10. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. ナノプローブ・カソードルミネッセンス装置の開発と圧電性ナノ材料の応力印加その場評価への応用. 2012年秋季&lt;第73回&gt;応用物理学会. 2012
  11. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Impurity Decoration on Extended Defects in Multicrystalline Silicon. 73rd JSAP Autumn Meeting 2012. 2012
  12. 宮村 佳児, 原田 博文, イプトナー カロリン, 陳 君, プラカッシュ ロニト ロニル, 関口 隆史, 小島拓人, 大下祥雄, 小椋厚志, 福澤理行, 中野智, 高冰, 柿本浩一. 10cm径mono cast Si結晶成長. 応用物理学会. 2012
  13. 鈴木慶太郎, 横野茂輝, 神永惇, 深田 直樹, 関口 隆史, 菱田 俊一, 村上浩一. Si+イオン注入によるSiナノワイヤ中へのSiナノ結晶形成・制御. 秋季第72回応用物理学会学術講演会. 2012
  14. WATANABE, Kentaro, VOLK, Janos, R&#243;bert Erd&#233;ryi, SEKIGUCHI, Takashi. Development of nano-probe low-temperature cathodoluminescence system and its application to strained piezoelectric nano-rods. NSS7. 2012
  15. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi. SE image contrast formation of freestanding α-Si3N4 nanobelts. BIAMS11. 2012
  16. SEKIGUCHI, Takashi, MIYAMURA, Yoshiji, CHEN, Jun, JIPTNER, Karolin, PRAKASH, Ronit Roneel, LI, Jian-Yong, Ogura Atsushi, HARADA, Hirofumi. Characterization of mono-like Si ingots for PV application by using EBIC, XRT, IR. Beam Injection Assessment on Microstructures in Semiconductors. 2012
  17. 深田 直樹, 滝口亮, 石田慎哉, 横野茂樹, 関口 隆史, 村上浩一. シリコンナノワイヤへの不純物ドーピングと不純物の挙動 . シリコン材料・デバイス研究会. 2012
  18. 李 雄, 渡辺 健太郎, 熊谷 和博, 関口 隆史. SEM/CLを用いたHVPE-GaN厚膜中のピット型欠陥. 日本顕微鏡学会. 2012
  19. 渡辺 健太郎, 野久尾 毅, 陳 君, 関口 隆史. プローブEBIC 法による異種基板上AlInAs/GaInAs界面電子チャネル構造の欠陥評価 チャネル構造の欠陥評価. 日本顕微鏡学会 第68回学術講演会. 2012
  20. 熊谷 和博, 関口 隆史. 走査電子顕微鏡法における検出二次電子エネルギー評価. 日本顕微鏡学会第68回学術講演会. 2012
  21. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoyuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Investigation of local leakage sites in high-k/metal gate stacks by an electron-beam-induced current technique. The 8th International Nanotechnology Conference. 2012
  22. XU, Xiaoxiong, TAKADA, Kazunori, FUKUDA, Katsutoshi, KUMAGAI, Kazuhiro, AKATSUKA, Kosho, HANG, Buithi, OSADA, Minoru, OHNISHI, Tsuyoshi, SEKIGUCHI, Takashi, SASAKI, Takayoshi. TaO3 nanosheet with a mesh structure as an ionic material. INC8. 2012
  23. イプトナー カロリン, 福澤理行, 宮村 佳児, 原田 博文, 関口 隆史. 一方向凝固で育成したmono-like結晶の残留歪分布の解析. 2012年春季 第59回 応用物理学関係連合講演会 . 2012
  24. 陳 君, プラカッシュ ロニト ロニル, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. 多結晶シリコン中の粒界と転位の相互作用. 2012年春季 第59回 応用物理学関係連合講演会. 2012
2011
  1. イプトナー カロリン, Kawakami Hideki, 陳 君, Suemasu Takashi, 関口 隆史. SEM, EBSD and EBIC characterizations of epitaxial β-FeSi2 thin films on Si substrate. 2011 Tsukuba Nanotechnology Symposium. 2011
  2. 北澤 英明, 児子 精祐, 原田 善之, 李 政祐, 加藤 誠一, 中野 嘉博, 大吉 啓司, 籾田 浩義, 大野 隆央, 柳町 治, 井上 純一, 熊谷 和博, 関口 隆史, 木戸 義勇. ナノ計測技術によるアルミナ系ReRAMデバイス開発. 第3回AIST-NIMS計測分析シンポジウム. 2011
  3. MIYAMURA, Yoshiji, JIPTNER, Karolin, HARADA, Hirofumi, FUKUZAWA Masayuki, Kakimoto Koichi, Kojima Takuto, Ohshita Yoshio, Tachibana Tomihisa, Ogura Atshushi, SEKIGUCHI, Takashi. GROWTH AND CHARACTERIZATION OF LARGE GRAIN MULTUCRISTALLINE SILICON. PVSEC-21. 2011
  4. JIPTNER, Karolin, Kawakami Hideki, CHEN, Jun, Takashi Suemasu, SEKIGUCHI, Takashi. Characterization of epitaxial b-FeSi2 thin films on Si substrate by SEM, EBIC and EBSD imaging. PVSEC-21. 2011
  5. FUKATA, Naoki, MITOME, Masanori, BANDO, Yoshio, SEKIGUCHI, Takashi, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert L. Snyder. Characterization of bonding structures and electrical activities of dopant atoms in Ge nanowires. 2011MRS Fall Meetings. 2011
  6. FUKATA, Naoki, Shinya Ishida, Shigeki Yokono, Ryo Takiguchi, SEKIGUCHI, Takashi, Kouichi Murakami. Segregation behaviors and radial distribution of dopant atoms in silicon nanowires. 2011MRS Fall Meetings. 2011
  7. CHEN, Jun, SEKIGUCHI, Takashi. An Investigation of Grain Boundaries in Multicrystalline Silicon . 1st Low Carbon Earth Summit (LCES-2011) . 2011
  8. 渡辺 健太郎, フォルク ヤノシュ, 関口 隆史. ZnO基板上に成長したZnOナノロッド三角格子構造の局所発光特性評価. International NIMS-MFA-LIOS joint workshop on MetalOxide/Poly NA. 2011
  9. 石田慎哉, 滝口亮, 横野茂輝, 鈴木慶太郎, 深田 直樹, 菱田 俊一, 関口 隆史, 村上浩一. SiナノワイヤへのホットインプランテーションによるPドーピング. 秋季第72回応用物理学会学術講演会. 2011
  10. 高 冰, 中野 智, 柿本 浩一, 原田 博文, 宮村 佳児, 関口 隆史. 一方向性凝固法を用いた単結晶の種結晶成長中における坩堝近傍での多結晶発生の抑制. 応用物理学会学術講演会. 2011
  11. 深田 直樹, 三留 正則, 関口 隆史, 板東 義雄, Zhong Lin Wang. CVD法を利用したPドープGeナノワイヤの成長. 秋季第72回応用物理学会学術講演会. 2011
  12. 立花福久, 鮫島崇, 小島拓人, 新船幸二, 柿本浩一, 宮村 佳児, 原田 博文, 関口 隆史, 大下祥雄, 小椋厚志. 種結晶を用いて作製したシリコン基板中の結晶欠陥に関する評価(2). 応用物理学会学術講演会. 2011
  13. 滝口亮, 鈴木慶太郎, 深田 直樹, 菱田 俊一, 陳 君, 関口 隆史, 村上浩一. 低温オゾン酸化によるSiNWs中のB偏析抑制効果. 秋季第72回応用物理学会学術講演会. 2011
  14. JIPTNER, Karolin, HARADA, Hirofumi, LI, Jian-Yong, MIYAMURA, Yoshiji, PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi. Formation of SiC and Si3N4 particles in directional solidification Si-growth. Joint Seminar for Eelectronic Materials (JSEM) 2011. 2011
  15. CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. combinatorial materials research and screening for future nano electronics. the 6th CSIRO Advanced Materials Conference & Workshops . 2011
  16. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoykuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Characterization of High-k Gate Stacks by EBIC Technique. International Nanotechnology Conference on Communication and Coo. 2011
  17. CHIKYOW, Toyohiro, YOSHITAKE, Michiko, NABATAME, Toshihide, NAGATA, Takahiro, SEKIGUCHI, Takashi. New materials research for future nano electronics in NIMS. The 7th International Nanotechnology Conference. 2011
  18. 熊谷 和博, 児子 精祐, 関口 隆史, 北澤 英明, 木戸 義勇. ReRAM用陽極酸化AlOxのON-OFF状態のSEM観察. 日本顕微鏡学会第67 回学術講演会. 2011
  19. 原田 博文, 宮村 佳児, 渡辺 健太郎, 関口 隆史. 鋳造法による高品質単結晶育成の現状と課題. 2011年春季第58回応用物理学会学術講演会. 2011
  20. 渡辺 健太郎, S&#233;bastien Cueff, Christophe Labb&#233;, Xavier Portier, Richard Rizk, 関口 隆史. ErドープSiナノ結晶を含むSiO2膜のカソードルミネッセンス評価. 2011年春季&lt;第58回&gt;応用物理学会. 2011
  21. 立花福久, 鮫島崇, 小島拓人, 新船幸二, 柿本浩一, 宮村 佳児, 原田 博文, 関口 隆史, 大下祥雄, 小椋厚志. 種結晶を用いて一方向凝固法で作製したシリコン基板の評価. 2011年春季第58回応用物理学会学術講演会. 2011
2010
  1. FUKATA, Naoki, SATO, Keisuke, MITOME, Masanori, BANDO, Yoshio, SEKIGUCHI, Takashi. Doping and characterization of boron and phosphorus atoms in Ge nanowires. 5th Workshop on Nanowire Growth. 2010
  2. FUKATA, Naoki, SATO, Keisuke, MITOME, Masanori, SEKIGUCHI, Takashi, BANDO, Yoshio, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert L. Snyder, SEKIGUCHI Takashi. Doping and characterization of boron and phosphorus atoms in Ge nanowires. 2010 MRS Fall Meeting. 2010
  3. XIE, Rong-Jun, HIROSAKI, Naoto, DIERRE, Benjamin, SEKIGUCHI, Takashi. Eu2+-doped AlN-SiC Solid Solutions: Synthesis, Cathodoluminescence and Potential Applications. The 17th International Display Workshops (IDW '10). 2010
  4. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, NGUYEN, Nam, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. Combinatorial materials design and its application for nano device in future. International Workshop on Materials Discovery by Scale-Bridging . 2010
  5. LI, Jian-Yong, CHEN, Jun, OHASHI, Naoki, OKUSHI, Hideyo, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime. Characterization of Pt/SrTiO3:Nb junctions by electron beam induced current. 3rd International Congress on Ceramics. 2010
  6. XIE, Rong-Jun, HIROSAKI, Naoto, TAKEDA, Takashi, DIERRE, Benjamin, SEKIGUCHI, Takashi. Photoluminescence and Cathodoluminescence of Nitride Phosphors. 3rd International Congress on Ceramics. 2010
  7. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong, ONODERA, Hisashi. EBIC and Cathodoluminescence Study on the Grain Boundaries and Fe Impurities in Multicrytstalline Si . Si forum:シリコン材料の科学と技術フォーラム2010. 2010
  8. 熊谷 和博, 関口 隆史. 低加速電圧走査型電子顕微鏡法におけるコントラスト形成と表面ポテンシャル観察. 第30回表面科学学術講演会. 2010
  9. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Combinatorial approach for selection of new gate stack materials. RUSNANO2010. 2010
  10. WATANABE, Kentaro, DIERRE, Benjamin, FABBRI, Filippo, SEKIGUCHI, Takashi. Cathodoluminescence studies of Er-doped Si nanocrystals in SiO2 film. 6th Nano-Scale Spectroscopy and Nanotechnology. 2010
  11. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi. Image Formation of Low-voltage Scanning Electron Microscopy - Secondary Electron Detection and Titania Thin Film Observation . The 6th International Workshop on Nano-scale Spectroscopy and Na. 2010
  12. OHASHI, Naoki, OKUSHI, Hideyo, LI, Jian-Yong, CHEN, Jun, UEDA, Shigenori, YOSHIKAWA, Hideki, YAMASHITA, Yoshiyuki, KOBAYASHI, Keisuke, SEKIGUCHI, Takashi, HANEDA, Hajime. Resistance switching at Pt/SrTiO3:Nb interface. MS&T Materials Science & Technology Conference & Exhibition 2010. 2010
  13. SEKIGUCHI, Takashi, CHEN, Jun, CHIKYOW, Toyohiro. Characterization of high-k dielectric films for MOSFET using Electron Beam Induced Current. IUMRS-ICA 2010. 2010
  14. 李 建永, 大橋 直樹, 陳 君, 大串 秀世, 関口 隆史, 羽田 肇. 電子ビーム誘起電流によるPt/SrTi1-xNbxO3接合の抵抗スイッチング特性評価. 応用物理学会講演会2010年(平成22年)秋季講演会. 2010
  15. 石田慎哉, 横野茂輝, 滝口亮, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. シリコンナノワイヤ中への水素導入効果. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  16. 横野茂輝, 石田慎哉, 滝口亮, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのO2+イオン注入効果. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  17. SEKIGUCHI, Takashi, CHEN, Jun, ONODERA, Hisashi, PRAKASH, Ronit Roneel. EBIC/CL classification of small angle grain boundaries in multicrystalline Si. E-MRS fall meeting. 2010
  18. 滝口亮, 石田慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. Siナノワイヤ中のBアクセプタ濃度分布の定量評価. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  19. 小野寺 尚志, 閻 紀旺, 伊藤 俊, 関口 隆史. ナノ構造を有するSi切りくずの熱処理効果. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  20. PRAKASHRonit Roneel, 小野寺尚志, 陳君, 陳斌, 関口隆史. Impurity decoration on extended defects in multicrystalline Silicon. Joint Symposium on Electronic Materials 2010. 2010
  21. 李 雄, Hyunjae Lee, Jiho Chang, Takafumi Yao, 渡辺 健太郎, 原田 博文, 関口 隆史. Orientation dependence of defect propagation in lateral epitaxial overgrown (11-20) GaN on r-plane (1-102) sapphire. Joint symposium on electronic materias 2010. 2010
  22. イプトナー カロリン, 英輝川上, 陳 君, 末益, 関口 隆史. EBIC analysis of β-FeSi2/Si heterostructures for photovoltaic application. JSEM. 2010
  23. 小野寺尚志, 閻紀旺, 原田博文, 伊藤 俊, 関口隆史. Room temperature luminescence from nanoscale silicon chips. Joint Symposium on Electronic Materials 2010. 2010
  24. 関口 隆史. 結晶シリコン太陽電池とシリサイド太陽電池の比較/EBICによるアプローチ. つくばナノテク産学独連携人材育成プログラム. 2010
  25. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi. Secondary Electron Imaging of Titania Thin Film for Surface Potential Analysis. BIAMS 2010. 2010
  26. LI, Jian-Yong, CHEN, Jun, OKUSHI, Hideyo, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime, OHASHI, Naoki. Characterization of Pt/SrTiO3:Nb junction showing resistance switching behavior. 7th Asian Meeting on Electroceramics (AMEC-7). 2010
  27. OHASHI, Naoki, ADACHI, Yutaka, SAKAGUCHI, Isao, LI, Baoe, LI, Jian-Yong, WILLIAMS, Jesse Robert, MATSUMOTO, Kenji, OGAKI, Takeshi, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, OKUSHI, Hideyo, CHEN, Jun, SEKIGUCHI, Takashi, HANEDA, Hajime. Charge compensation in oxide semiconductors. International Symposium on Compound Semiconductor Week 2010. 2010
  28. 熊谷 和博, 関口 隆史. 自立α-Si3N4ナノベルトからの二次電子放出と像形成. 日本顕微鏡学会第66回学術講演会. 2010
  29. 関口 隆史, 熊谷 和博. 100V電顕のススメ. 日本顕微鏡学会第66回学術講演会. 2010
  30. CHIKYOW, Toyohiro, NAGATA, Takahiro, CHEN, Jun, SEKIGUCHI, Takashi, YOSHITAKE, Michiko, NABATAME, Toshihide. Strategy for new materials discovery for future nano electronics. International Nanotechnology Conference 6 (INC6). 2010
  31. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi, CHEN, Jun. Landscape of Materials Design for Future Nano Electronics and High-throughput Materials Exploration. 1st Singapore-Japan Workshop on Advances in nanomaterials. 2010
  32. 関口 隆史, 陳 君. 太陽電池用多結晶Siにおける結晶粒界の電気的・光学的作用. 日本金属学会 2010年春期大会. 2010
  33. 陳 君, 関口 隆史, 深田 直樹, 高瀬 雅美, 根本 善弘, 蓮沼隆, 山部紀久夫, 佐藤基之, 山田啓作, 知京 豊裕. EBICとTEMによる絶縁膜破壊したHigh-kゲートスタック構造の観察. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  34. 解 栄軍, 廣崎 尚登, 武田 隆史, ディエール バンジャマン, 関口 隆史. b-サイアロン緑色蛍光体の電子線励起特性. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  35. 横野茂輝, 齋藤直之, 石田 慎哉, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのO2+イオン注入効果. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  36. 李 雄, 熊谷 和博, Jiho Chang, Hyunjae. Lee, Takafumi yao, 関口 隆史. カソードルミネッセンスによるHVPEで成長したGaN厚膜上のVピットの評価. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  37. 関口 隆史, 陳 君, 福澤理行. 太陽電池用多結晶シリコンにおける粒界の電気的・光学的・機械的特性. 2010年春期 第57回 応用物理学会. 2010
  38. 石田 慎哉, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのPイオン注入. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  39. 深田 直樹, 齋藤直之, 石田 慎哉, 横野茂輝, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピング. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  40. 小野寺 尚志, 閻紀旺, 関口 隆史. ナノ構造を有するSi切りくずの発光特性. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  41. 陳 君, 関口 隆史, 深田 直樹, 高瀬 雅美, 根本 善弘, 蓮沼隆, 山部紀久夫, 佐藤基之, 山田啓作, 知京 豊裕. EBICとTEMによってHigh-kゲートスタック構造のリーク電流欠陥の研究. 第10回High-kネット報告会. 2010
  42. OHASHI, Naoki, LI, Jian-Yong, CHEN, Jun, ADACHI, Yutaka, SAKAGUCHI, Isao, LI, Baoe, ZHEN, Yuhua, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, OKUSHI, Hideyo, SEKIGUCHI, Takashi, HANEDA, Hajime. Oxide semiconductors for optoelectronics. MANA International Symposium 2010. 2010
  43. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. EBIC and TEM Investigations of Current Leakage Sites in High-k Gate Stacks. MANA International Symposium 2010. 2010
  44. 熊谷 和博, 関口 隆史. 低加速電圧SEMの二次電子検出とチタニア薄膜観察への応用. 物性研短期研究会「顕微分光とナノサイエンスの発展」. 2010
  45. LIN, Jing, BANDO, Yoshio, HUANG, Yang, TANG, Chengchun, DIERRE, Benjamin, SEKIGUCHI, Takashi, GOLBERG, Dmitri. Structural Characterization and Cathodoluminescence of Individual BN Layers-Sheathed CaS:Eu nanowires . IEEE International NanoElectronics Conference (INEC) 2010. 2010
2009
  1. SEKIGUCHI, Takashi. Electrical, optical and mechanical properties of multicrystalline Si for photovoltaic. 關鍵能源材料與製程國際研討會. 2009
  2. FUKATA, Naoki, Naoyuki Saito, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, MITOME, Masanori, BANDO, Yoshio, Kouichi Murakami. Doping and characterization of impurity atoms in Si and Ge nanowires. The 3rd International Conference on One-dimensional Nanomaterial. 2009
  3. FUKATA, Naoki, Naoyuki Saito, Shinya Ishida, Shigeki Yokono, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Impurity doping in silicon nanowires during and after synthesis by ion implantation. 2009 MRS Fall Meeting. 2009
  4. FUKATA, Naoki, CHEN, Jun, SEKIGUCHI, Takashi, Masanori Seoka, Naoyuki Saito, Kouichi Murakami. DOPING AND SEGREGATION OF IMPURITY ATOMS IN SILICON NANOWIRES SYNTHSIZED BY LASER ABLATION. The 10th International Conference on Laser Ablation. 2009
  5. 関口 隆史, 陳 君. 電子線誘起電流(EBIC)法による半導体材料・素子の評価. 第29回 LSIテスティングシンポジウム. 2009
  6. OHASHI, Naoki, SAKAGUCHI, Isao, OHSAWA, Takeo, ADACHI, Yutaka, HANEDA, Hajime, MATSUMOTO, Kenji, SEKIGUCHI, Takashi, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke. Charge compensation and defect structures in ZnO-related alloy crystals studied by hard-x-ray photoemission and solid state diffusion. Materials Science & Technology 2009 Conference and Exhibision. 2009
  7. 陳斌, 陳君, 関口隆史, Takasumi Ohyanagi, Akimasa Kinoshita, Hirofumi Matsuhata, Hajime Okumura. Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices. DRIP XIII. 2009
  8. SEKIGUCHI, Takashi, LEE, Woong, DIERRE, Benjamin, YOKOYAMA, Masaaki, Hun Jae Lee, Takafumi Yao, Jiho Chang. Cathodoluminescence characterization of free-standing GaN wafers. DRIP XIII. 2009
  9. DIERRE, Benjamin, Yuan, Xiaoli, Nicola ARMANI, Filippo FABBRI, Giancarlo SALVIATI, Kazuyuki UEDA, SEKIGUCHI, Takashi. Importance of the surface for the luminescence stability of ZnO. DRIP XIII. 2009
  10. 石田 慎哉, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. P イオン注入後のSi ナノワイヤの結晶性回復とP の電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  11. 深田 直樹, 齋藤直之, 石田 慎哉, 横野茂輝, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  12. 齋藤直之, 石田 慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. 短時間アニールを利用したBイオン注入Siナノワイヤの結晶性回復とBの電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  13. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Landscape of Combinatorial Materials Exploration and its application for nano scicence . China NANO 2009. 2009
  14. ZHAI, Tianyou, FANG, Xiaosheng, BANDO, Yoshio, DIERRE, Benjamin, LIU, Baodan, ZENG, Haibo, XU, Xijin, HUANG, Yang, Yuan, Xiaoli, SEKIGUCHI, Takashi, GOLBERG, Dmitri. Characterization, Cathodoluminescence and Field-Emission Properties of Morphology Tunable CdS Micro/Nanostructures . ChinaNANO 2009 . 2009
  15. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Landscape of materials design for future nano electronics and high-throughput materials exploration。 . Nano Korea 2009. 2009
  16. LEE, Woong, DIERRE, Benjamin, Mina Jung, Siyoung Kim, PARK, Seunghwan, Hyunjae Lee, Jiho Chang, Takafumi Yao, SEKIGUCHI, Takashi. Influence of the polarity of GaN grown on ZnO buffer layer. Joint Symposium on Electronic Materials. 2009
  17. ONODERA, Hisashi, JIWANG Yan, SEKIGUCHI, Takashi. Cathodoluminesence characterization of nanoscale silicon chips fabricated by diamond turning. Joint Symposium on Electronic Materials. 2009
  18. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Doping and segregation of impurity atoms in silicon nanowires. ICDS25. 2009
  19. DIERRE, Benjamin, Yuan, Xiaoli, INOUE, Kazuo, HIROSAKI, Naoto, TAKEDA, Takashi, XIE, Rong-Jun, SEKIGUCHI, Takashi. Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors. 22nd International Vacuum Nanoelectronics Conference (IVNC2009). 2009
  20. DIERRE, Benjamin, Yuan, Xiaoli, Kazuyuki UEDA, SEKIGUCHI, Takashi. H behaviour under low-energy electron beam irradiation in ZnO single crystal. STAC-3. 2009
  21. YAO, Yongzhao, OGAKI, Takeshi, MATSUMOTO, Kenji, SAKAGUCHI, Isao, WADA, Yoshiki, HANEDA, Hajime, SEKIGUCHI, Takashi, OHASHI, Naoki. Lattice constants of isotopic natGa15N grown on c-plane sapphire by molecular-beam epitaxy. STAC-3. 2009
  22. 熊谷 和博, 関口 隆史. 低加速SEMにおける像検出と像情報. 第33回表面分析研究会. 2009
  23. DIERRE, Benjamin, Yuan, Xiaoli, Ueda Kazuyuki, SEKIGUCHI, Takashi. Electron beam induced desorptions and their effects on the luminescence of ZnO. EMRS2009 ODYSSE Symposium. 2009
  24. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong, Masayuki Fukuzawa, Masayoshi Yamada. Electrical, Optical and Mechanical Properties . 3rd Int. Workshop on Crystalline Silicon Solar Cells. 2009
  25. 熊谷 和博, 関口 隆史. 低加速SEMにおけるIn-lens検出器とOut-lens検出器の電子検出特性. 日本顕微鏡学会第65 回学術講演会. 2009
  26. YAO, Yongzhao, OGAKI, Takeshi, FUKATA, Naoki, MATSUMOTO, Kenji, SAKAGUCHI, Isao, WADA, Yoshiki, HANEDA, Hajime, SEKIGUCHI, Takashi, OHASHI, Naoki. Lattice constants of isotopic natGa15N grown on c-plane sapphire by molecular-beam epitaxy. The international conference on nanophotonics 2009. 2009
  27. 佐藤具就, 近藤康洋, 関口 隆史, 末益崇. MOVPE成長したIn0.80Ga0.20As歪量子井戸の欠陥進展に与えるSbサーファクタント効果. 第56回応用物理学関係連合講演会. 2009
  28. 関口 隆史, 陳 君, 陳 斌, 李 雄. 多結晶Si 中の小角粒界の電気的・光学的作用. 第56回応用物理学関係連合講演会. 2009
  29. 解 栄軍, 廣崎 尚登, 武田 隆史, ディエール バンジャマン, 関口 隆史. 酸窒化物蛍光体の電子線励起特性. 2009年春季 第56回応用物理学関係連合講演会. 2009
  30. 陳 斌, 陳 君, 関口 隆史, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electrical property of stacking faults in 4H-SiC. Annual Meeting - JSAP The 56th Spring Meeting. 2009
  31. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 佐藤基之, 奈良安雄, 山田啓作. EBICによるHigh-k/metal gate構造内の電気ストレス誘起欠陥発生のその場観察. 2009年春季第56回応用物理学関係連合講演会 . 2009
  32. 関口 隆史, 陳 君, 福澤理行, 山田正良. 多結晶Siにおける欠陥と残留歪の関係. 第56回応用物理学関係連合講演会. 2009
  33. 石田慎哉, 瀬岡雅典, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへのPドーピングと電気的活性化. 春季第56回応用物理学会学術講演会. 2009
  34. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. Siナノワイヤ中にドープしたPおよびBの熱酸化過程での偏析挙動. 春季第56回応用物理学会学術講演会. 2009
  35. 横野茂輝, 瀬岡雅典, 齋藤直之, 石田慎哉, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. O2+およびAr+イオン注入後のSiナノワイヤ内部の結晶性回復過程. 春季第56回応用物理学会学術講演会. 2009
  36. 齋藤直之, 瀬岡雅典, 石田慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. Siナノワイヤへイオン注入したBの電気的活性化. 春季第56回応用物理学会学術講演会. 2009
  37. 深田 直樹, 関口 隆史, 齋藤直之, 瀬岡雅典, 村上浩一. ボトムアップ手法:レーザーアブレーションによるSiナノワイヤの作製と不純物ドーピング. 春季第56回応用物理学会学術講演会. 2009
  38. 矢口 大, 西村 聡之, 廣崎 尚登, 山本 吉信, 末廣 隆之, ディエール バンジャマン, 関口 隆史, 浜中廣見, 守吉佑介. AlN:Mnナノ粒子の合成と蛍光特性. 第47回セラミックス基礎科学討論会. 2009
2008
  1. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phosphorus donors and boron acceptors in silicon nanowires synthesized by laser ablation. 2008MRS FASLL MEETING. 2008
  2. SEKIGUCHI, Takashi, DIERRE, Benjamin, Wang, JinBin, CHEN, Bin, CHEN, Jun. Cathodoluminescence and EBIC characterization of smart semiconductor materials. Chinese Materials Research Society (C- MRS) . 2008
  3. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara. Electron-beam-induced current characterization of high-k dielectrics. The 5th International Symposium on Advanced Science and Technolo. 2008
  4. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Understanding of carrier transport in MOS device with high-k gate dielectric: an electron-beam-induced current study of leakage sites . 2008 International Workshop on Dielectric Thin Films (IWDTF-08). 2008
  5. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. B acceptors and P donors in silicon nanowires. 21st International Microprocesses and Nanotechnology Conference. 2008
  6. DIERRE, Benjamin, Yuan, Xiaoli, Ueda Kazuyuki, SEKIGUCHI, Takashi. Impact of the electron beam irradiation on the luminescence properties of ZnO single crystal. The 6th Asian Meeting on Electroceramics (AMEC-6). 2008
  7. YAO, Yongzhao, OGAKI, Takeshi, MATSUMOTO, Kenji, SAKAGUCHI, Isao, WADA, Yoshiki, HANEDA, Hajime, SEKIGUCHI, Takashi, OHASHI, Naoki. Growth and characterization of isotopic natGa15N by molecular-beam epitaxy . 6th Asian Meeting on Electroceramics. 2008
  8. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro. Imaging of Leakage Sites in High-k Gate Electrode by using Electron-beam-induced Current Technique. International Conference onSolid State Devices and Materials. 2008
  9. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack . The 2008 International Conference on Solid State Devices and Mat. 2008
  10. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. シリコンナノワイヤへの不純物ドーピングと欠陥評価. 第18回 格子欠陥フォーラム. 2008
  11. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. BおよびP を同時ドープしたSiナノワイヤでのキャリア補償効果. 2008年秋季 第69回応用物理学会学術講演会. 2008
  12. 瀬岡雅典, 深田 直樹, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. 熱酸化過程でのSiナノワイヤ中のPおよびBの偏析挙動. 2008年秋季 第69回応用物理学会学術講演会. 2008
  13. 齋藤直之, 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化. 2008年秋季 第69回応用物理学会学術講演会. 2008
  14. WANG, Yan, DIERRE, Benjamin, SEKIGUCHI, Takashi. Effect of hydrogenation on the electron irradiation properties of the unintentional doped GaN. 11th Joint Symposium of Electronic Materials (JSEM2008). 2008
  15. DIERRE, Benjamin, Yuan, Xiaoli, SEKIGUCHI, Takashi. Polarity and hydrogen effects on the luminescence evolutions of ZnO induced by electron beam. 11th Joint Symposium of Electronic Materials (JSEM2008). 2008
  16. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi. Correlation of electrical activity and structure of sigma 3 boundary in multicrystalline Si. 11th Joint Symposium of Electronic Materials (JSEM2008). 2008
  17. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi. Secondary Electron Detection in SEM- Difference of In-lens and Everhart Thornley Detector -. 11th Joint Symposium of Electronic Materials (JSEM2008). 2008
  18. HUANG, Yang, BANDO, Yoshio, TANG, Chengchun, ZHI, Chunyi, TERAO, Takeshi, SEKIGUCHI, Takashi, GOLBERG, Dmitri. BN MICROTUBES EXHIBITING INTENSE NEAR-BAND-GAP UV EMISSION. 2008 International Conference on CARBON, CARBON '08. 2008
  19. SEKIGUCHI, Takashi, WANG, Yan, DIERRE, Benjamin, YAO, Yongzhao, YOKOYAMA, Masaaki, NAKAGAWA, Ken, Kakinuma Shigeru. Standarization of GaN wafer charactrerization method by using cathodoluminescence. BIAMS 2008. 2008
  20. DIERRE, Benjamin, Yuan, Xiaoli, UEDA Kazuyuki , SEKIGUCHI, Takashi. Role of hydrogen on the luminescence properties of ZnO. BIAMS 2008. 2008
  21. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin. EBIC study of electrical activity of grain boundaries in multicrystalline Si - Impact of GB character and Fe contamination. E-MRS 2008 Spring Meeting. 2008
  22. CHEN, Jun, CHEN, Bin, SEKIGUCHI, Takashi, Masayuki Fukuzawa, Masayoki Yamada. Understanding of the Origin of Strong Recombination Activities at Small-Angle Grain Boundaries in Multicrystalline Si. The 4-th Asian Conference on Crystal Growth and Crystal Technolo. 2008
  23. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Shun Ito. Effect of boundary plane on the recombination activity of Σ3 boundaries in multicrystalline silicon. 4th Asian Conference on Crystal Growth and Crystal Technology. 2008
  24. 熊谷 和博, 関口 隆史. 低加速SEM像コントラストの加速電圧依存性. 日本顕微鏡学会第64回学術講演会. 2008
  25. YAO, Yongzhao, SEKIGUCHI, Takashi, SAKUMA, Yoshiki, OHASHI, Naoki, ADACHI, Yutaka, OKUNO, Hanako, TAKEGUCHI, Masaki. InN growth by plasma-assisted molecular beam epitaxy with In monolayer insertion. The 4th international nanotechnology conference on communication. 2008
  26. 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. Siナノ細線へのPおよびBのコドーピングと酸素アニールによるP原子・B原子の偏析挙動. 春季第55回応用物理学会学術講演会. 2008
  27. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 左藤基之, 奈良安雄, 山田啓作. Comparison of Leakage Behaviors in pMOS and nMOS with Poly-Si/HfSiON Gate Stacks by EBIC Technique. 2008年春季第55回応用物理学関係連合講演会 . 2008
  28. 黄少雲, 清水麻希, 山口智弘, 深田 直樹, 関口 隆史, 石橋幸治. n型Siナノワイヤ中の単電子輸送. 春季第55回応用物理学会学術講演会. 2008
  29. 深田 直樹, 松下聡, 陳 君, 関口 隆史, 内田紀行, 村上浩一. PドープSiナノワイヤ中の欠陥の水素・酸素による不活性化とドナー濃度制御. 春季第55回応用物理学会学術講演会. 2008
  30. 深田 直樹, 松下聡, 瀬岡雅典, 陳 君, 関口 隆史, 村上浩一. Siナノワイヤ中に単独ドープしたPおよびBの熱酸化過程での偏析挙動. 春季第55回応用物理学会学術講演会. 2008
  31. 関口 隆史, 陳 君, 陳 斌. 電子線誘起電流(EBIC)法によるSi系材料の欠陥物性評価/粒界の電気的特性を中心として. 2008年春季第55回応用物理学関係連合講演会. 2008
  32. 小林 純, 関和 秀幸, 宮本美幸, 大橋 直樹, 坂口 勲, 羽田 肇, 関口 隆史. 液相エピタキシー法による(Zn,Mg)O厚膜の成長. 日本セラミックス協会2008年年会. 2008
2007
  1. 深田 直樹, 松下聡, 岡田直也, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法で生成されたシリコンナノワイヤ中への不純物ドーピング. 第7回界面ナノアーキテクトニクスワークショップ. 2007
  2. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin. Electron-beam-induced current study of grain boundaries and their impurity decoration in multicrystalline Si. 2nd-International Workshop on Science and Technology of Crystall. 2007
  3. XIE, Rong-Jun, HIROSAKI, Naoto, INOUE, Kazuo, SEKIGUCHI, Takashi, DIERRE, Benjamin. Eu2+-activated AlN powder-A promising blue nitride for field emission displays. The 4th Int. Symp. on Displayand Lighting Phosphor Materials . 2007
  4. XIE, Rong-Jun, INOUE, Kazuo, SEKIGUCHI, Takashi, DIERRE, Benjamin. Blue-emitting AlN:Eu2+ phosphors for field emission displays. The 14th International Display Workshops. 2007
  5. SEKIGUCHI, Takashi. Observation of nanostructures by using UHV-low energy SEM. International Symposium on Future Prospects of Scanning Electron. 2007
  6. KUMAGAI, Kazuhiro, SEKIGUCHI, Takashi, FUKUDA, Katsutoshi, SASAKI, Takayoshi. An Application of Low-Voltage SEM for the Visualization of Nanosheets . 4th international Symposium on Practical Surface Analysis. 2007
  7. IROKAWA, Yoshihiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi. Effects of Surface States on Hydrogen Sensing Performance of Pt-GaN Schottky Diodes. The 34th International Symposium on Compound Semiconductors. 2007
  8. 関口 隆史. CL/EBICを用いたSi系材料の評価. KASTECセミナー. 2007
  9. 瀬岡雅典, 深田 直樹, 松下聡, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. Si ナノ細線へのP およびB のコドーピング. 2007年秋季第68回応用物理学会学術講演会. 2007
  10. 井上 和朗, 廣崎 尚登, 解 栄軍, 関口 隆史, ディエール バンジャマン, 田村清. AlN:Eu青色蛍光体の電子線励起発光特性. 2007年秋季第68回応用物理学会学術講演会. 2007
  11. 深田 直樹, 陳 君, 関口 隆史, 村上浩一, 池本夕佳, 森脇太郎. SPring-8 BL43IRビームラインを利用したSiナノ細線の赤外吸収分光. 2007年秋季第68回応用物理学会学術講演会. 2007
  12. SEKIGUCHI, Takashi. Activity of semiconductor material research in National Institute for Materials Science in Tsukuba. JSEM2007. 2007
  13. FUKATA, Naoki, Satoshi Matsushita, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami, Takao Tsurui. Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. 24th International Conference on Defects in Semiconductors. 2007
  14. 深田 直樹, 大島崇, 岡田直也, 松下聡, 鶴井隆雄, 陳 君, 関口 隆史, 村上浩一. Siナノ細線への熱酸化応力誘起とフォノン閉じ込め効果. 第127回結晶工学分科会研究会「IV族系半導体のひずみエンジニアリン. 2007
  15. 関口 隆史. 超高真空SEMから低真空SEMまで. 第30回表面分析研究会. 2007
  16. 瀬岡雅典, 松下聡, 深田 直樹, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. SiナノワイヤへのPドーピングと熱酸化によるPの偏析挙動. ナノ学会第5回大会. 2007
  17. 関口 隆史, ディエール バンジャマン, 袁 暁利, 横山 政昭. 低エネルギー電子線によって表面近傍の埋もれた構造を観察する試み. 日本顕微鏡学会第63回学術講演会. 2007
  18. 関口 隆史, ディエール バンジャマン, 袁 暁利, 横山 政昭. ナノ材料のカソードルミネッセンス測定―定量性の検討. 日本顕微鏡学会第63回学術講演会. 2007
  19. 関口 隆史, 平石 敬三. 低真空SEMを用いた高分子・炭素系材料の微細加工. 日本顕微鏡学会第63回学術講演会. 2007
  20. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 梅澤 直人, 大毛利 健治, 知京 豊裕, 蓮沼隆, 山部紀久夫, 犬宮誠治, 奈良安雄. Evolution of leakage sites in high-k dielectrics revealed by electron-beam-induced current (EBIC) technique. 2007年春季第54回応用物理学関係連合講演会. 2007
  21. 三浦章, 三浦洋子, 嶋田志郎, 関口 隆史, 横山 政昭, 溝渕文章. 連続原料供給されたGa2O3の炭素熱還元窒化によるGaN結晶育成. 2007年春季第54回応用物理学関係連合講演会. 2007
  22. 山田高広, 山根久典, 姚 永昭, 横山 政昭, 関口 隆史. Na蒸気を利用したNaフラックス法による窒化ガリウムの種結晶成長. 2007年春季第54回応用物理学関係連合講演会. 2007
  23. 岡田直也, 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 内田紀行, 村上浩一. BドープSiナノ細線の水素パッシベーションによる効果. 2007年春季第54回応用物理学関係連合講演会. 2007
  24. 三浦章, 三浦洋子, 嶋田志郎, 関口 隆史, 横山 政昭, 溝渕文章. Ga2O3とGeO2の同時炭素熱還元窒化による高輝度GeドープGaN結晶粉末の作製とその評価. 2007年春季第54回応用物理学関係連合講演会. 2007
  25. 井上 和朗, 廣崎 尚登, 解 栄軍, 関口 隆史, ディエール バンジャマン. 窒化物青色蛍光体の合成と発光特性. 2007年春季第54回応用物理学関係連合講演会. 2007
  26. 関口 隆史, ディエール バンジャマン, 袁 暁利. カソードルミネッセンス観察時のZnOバンド端発光の減少. 2007年春季第54回応用物理学関係連合講演会. 2007
  27. 松下聡, 深田 直樹, 瀬岡雅典, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. 熱酸化によるPドープSiナノワイヤ中のP原子の偏析挙動. 2007年春季第54回応用物理学関係連合講演会. 2007
  28. 深田 直樹, 岡田直也, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法により生成したSiナノ細線へのBドーピング. 2007年春季第54回応用物理学関係連合講演会. 2007
  29. 関口 隆史, 陳 君, 伊藤俊. 電子線誘起電流(EBIC)法を用いた多結晶Si中の粒界の電気的活性度評価. 2007年春季第54回応用物理学関係連合講演会. 2007
  30. 深田 直樹, 大島崇, 岡田直也, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法により生成したSiナノ細線への不純物ドーピング. 筑波大学ナノサイエンス特別プロジェクト成果発表会. 2007
  31. 深田 直樹, 鶴井隆雄, 陳 君, 関口 隆史, 村上浩一. レーザーアブレーション法により生成したSiナノワイヤーへの不純物ドーピングと評価. High-Kネット研究会. 2007
  32. 関口 隆史. EBIC法を用いた次世代Si系材料の研究−歪Si薄膜のミスフィット転位の観察・high-k膜のリーク評価. 第116回KASTECセミナー. 2007
2006
  1. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Shun Ito, Noriyuki Uchida, Kouichi Murakami. Carrier doping in silicon nanowires synthesized by laser ablation. 2006 MRS FALL Meeting. 2006
  2. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, Shun Ito, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Carrier doping of silicon nanowires synthesized by laser ablation. 2006 MRS FASLL MEETING. 2006
  3. 関口 隆史. 「シリコン材料中の拡張欠陥の評価と制御」-EBIC法による太陽電池用多結晶Siの粒界の研究-. 第114回KASTECセミナー. 2006
  4. Yuan, Xiaoli, CHEN, Jun, SEKIGUCHI, Takashi, Ri Sunggi, Shun Ito. Electron-beam-induced current study of dislocations at the interface of strained Si/Si0.8Ge0.2. EDS2006. 2006
  5. CHEN, Jun, SEKIGUCHI, Takashi, Shun ITO. Small-angle grain boundaries in multicrystalline silicon. EDS2006. 2006
  6. SEKIGUCHI, Takashi, CHEN, Jun, Deren Yang. Electron Beam Induced Current Study of Grain Boundaries in Multicrystalline Si. EDS2006. 2006
  7. CHEN, Jun, Yuan, Xiaoli, SEKIGUCHI, Takashi. Advanced electron beam induced current study for various Si based materials. 16th International Microscopy Congress. 2006
  8. HIRAISHI, Keizo, NIITSUMA, Junichi, TAKASE, Masami, SEKIGUCHI, Takashi, Hiroyuki Suzuki, Yoshihiko Nakayama. Processing of carbon related materials and photoresists by using low-vacuum scanning electron microscope. 16th International Microscopy Congress. 2006
  9. YOKOYAMA, Masaaki, YAO, Yongzhao, Yuan, Xiaoli, SEKIGUCHI, Takashi. Cathodoluminescence Study of GaN films and GaN based heterostructures. 16th International Microscopy Congress. 2006
  10. SEKIGUCHI, Takashi, Yuan, Xiaoli, OHASHI, Naoki, YOKOYAMA, Masaaki. Effect of Excitation Condition on the Cathodoluminescence Property of ZnO nanocrystals. 16th International Microscopy Congress. 2006
  11. 岡田直也, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. レーザーアブレーション法により生成されたSiナノ細線中へのBドーピングと水素パッシベーション効果. 2006年秋季第67回応用物理学会学術講演会. 2006
  12. 関口 隆史, 陳 君, 高瀬 雅美, 深田 直樹, 梅澤 直人, 大毛利 健治, 知京 豊裕, 蓮沼隆, 山部紀久夫, 犬宮誠治, 奈良安雄. EBIC法によるHfSiON MOSFETのリーク箇所の観察. 日本応用物理学会. 2006
  13. FUKATA, Naoki, Takashi Oshima, Naoya Okada, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Detection of phonon confinement and boron local vibrational mode in one-dimensional silicon nanowires by micro-Raman scattering measurements. 20th International Conference on Raman Spectroscopy. 2006
  14. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, K. Yamabe, R. Hasunuma, Y. Akasaka, Seiji Inumiya, Yasuo Nara, Keisaku Yamada. Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current. The 8th International Workshop on BIAMS . 2006
  15. SEKIGUCHI, Takashi, DIERRE, Benjamin, Yuan, Xiaoli, OHASHI, Naoki, YOKOYAMA, Masaaki. Optimization of cathodoluminescnece condition for the study of ZnO nanoparticles. Beam Injection Assessment of Microstructures in Semiconductors. 2006
  16. 岡田直也, 深田 直樹, 大島崇, 陳 君, 関口 隆史, 村上浩一. レーザーアブレーション法により生成したBドープSiナノ細線のラマン散乱測定. 2006年春季第53回応用物理学関係連合講演会. 2006
  17. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, CHIKYOW, Toyohiro. Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method. 4th NIMS International Conference on Photonic Processes in Semic. 2006
  18. YAO, Yongzhao, SEKIGUCHI, Takashi, SAKUMA, Yoshiki, OHASHI, Naoki. Fabrication of GaN film by Molecular Beam Epitaxy for InN growth. 4th NIMS International Conference on Photonic Processes in Semic. 2006
  19. HIRAISHI, Keizo, SEKIGUCHI, Takashi, TAKASE, Masami. Processing of photo-resist by using LV-SEM under various environment. 4th NIMS Interntional Conference on Photonic Processes in Semico. 2006
  20. Yuan, Xiaoli, SEKIGUCHI, Takashi, OHASHI, Naoki. Accelerating voltage dependence of cathodoluminescence spectra . 4th NIMS International Conference on Photonic Processes in Semi. 2006
  21. 深田 直樹, 大島崇, 岡田直也, 陳 君, 関口 隆史, 木塚徳志, 鶴井隆雄, 伊藤俊, 内田紀行, 村上浩一. レーザーアブレーションで生成されたシリコンナノ細線中のフォノン閉じ込めとドーピング効果. つくばone-dayワークショップ:ナノとバイオの接点. 2006
  22. 深田 直樹, 大島崇, 岡田直也, 木塚徳志, 鶴井隆雄, 伊藤俊, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーションで生成されたシリコンナノ細線中のフォノン閉じ込めとドーピング. IAMF/ICYS Workshop 2006. 2006
  23. 関口 隆史. EBICによる多結晶Si中の粒界の電気的活性度評価. 九州大学応用力学研究所共同研究会. 2006
  24. 深田 直樹, 大島崇, 岡田直也, 木塚徳志, 鶴井隆雄, 伊藤俊, 関口 隆史, 村上浩一. シリコンナノ細線中の熱酸化応力誘起とフォノン閉じ込め効果. 結晶加工と評価技術第145委員会 第105回研究会. 2006
  25. OHASHI, Naoki, ISHIGAKI, Takamasa, OGAKI, Takeshi, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime. Defects in zinc oxide. Photonic West 2006. 2006
2005
  1. 袁 暁利, 関口 隆史. Cathodoluminescence study of semiconductor nanostructures. NIMS-NCU-CH Workshop. 2005
  2. NAGATA, Takahiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Nano rod fabrication of GaN by FIB assisted CVD. 2005 NIST-NIMS Combinatorial Nanomaterials Symposium. 2005
  3. FUKATA, Naoki, Takashi Oshima, Naoya Okada, Tokushi Kizuka, Takao Tsurui, Shun Ito, SEKIGUCHI, Takashi, Kouichi Murakami. Quantum confinement effect and manipulation of Si nanowires synthesized by laser ablation and self-limiting oxidation. 2005 MRS FALL MEETING. 2005
  4. 長田 貴弘, 佐久間 芳樹, 関口 隆史, 知京 豊裕. 集束イオンビームCVD法によるGaN立体構造の作製と評価. 日本電子材料技術協会第42回秋期講演大会. 2005
  5. SEKIGUCHI, Takashi, ITO Shun, Yuan, Xiaoli, XIE Rongguo, CHEN, Jun, DEREN Yang. EBIC and Cathodoluminescence characterization of artificial grain boundaries formed in direct-bonded Si wafers. 3rd Asian Conference on Crysdtal Growth and Crystal Technology. 2005
  6. 陳 君, 関口 隆史, 楊徳仁. EBIC study of hydrogen passivation on grain boundaries in multicrystalline silicon:Influence of GB character and impurity contam. 結晶シリコン太陽電池の高効率化における材料学的アプローチ. 2005
  7. 関口 隆史, 陳 君, 袁 暁利, 伊藤俊. EBICによる粒界物性評価. 結晶シリコン太陽電池の高効率化における材料学的アプローチ. 2005
  8. SEKIGUCHI, Takashi, Rakesh, CHANDRA, YAO, Yongzhao, Yuan, Xiaoli, 辻幸一, 康俊勇. Effect of the oblique excitation and detection on the cathodoluminescence spectra. DRIP XI. 2005
  9. 新妻 潤一, 袁 暁利, 鈴木宏征, 中山佳彦, 藤井和博, 関口 隆史. 低真空走査型電子顕微鏡によるダイヤモンド基板の形状加工. 2005年(平成17年)秋季第66回応用物理学会学術講演会. 2005
  10. ONODERA, TSUNENOBU, OIKAWA, Hidetoshi, 笠井均, 中西八郎, SEKIGUCHI, Takashi. Fabrication of Polymer-Metal Hybridized Nanocrystals and Their Optical Properties. The 8th SPSJ International Polymer Conference (IPC2005). 2005
  11. OHASHI, Naoki, MATSUMOTO, Kenji, RYOKEN, Haruki, SAKAGUCHI, Isao, ISHIGAKI, Takamasa, SEKIGUCHI, Takashi, WANG, Yuguang, HANEDA, Hajime. Charge compensation in Doped ZnO. Asian meeting on electroceramics 4. 2005
  12. 袁 暁利, 関口 隆史, 新妻 潤一, フウ ジンツィン. Observation of Si3N4 nanosheets by low energy electron beam. 日本顕微鏡学会. 2005
  13. 謝 栄国, 関口 隆史, Dongsheng Li, Deren Yang. Introduction of vacancies in self-assembled photonic crystals by electron beam irradiwtion in environmental SEM. 日本顕微鏡学会. 2005
  14. 横山政昭, 中川健, 関口 隆史. CLによる化合物半導体中の圧痕周辺の歪評価. 日本顕微鏡学会. 2005
  15. 新妻 潤一, 袁 暁利, 伊藤俊, 関口 隆史. 電子線照射によるガス雰囲気中CNTの形状加工. 日本顕微鏡学会第61回学術講演会. 2005
  16. ザン ジンフウ, 板東 義雄, フウ ジンツィン, 関口 隆史, ゴルバーグ デミトリ. ZnS/Siの複合ナノワイヤーの成長. 日本顕微鏡学会第61回学術講演会. 2005
  17. NIITSUMA, Junichi, Yuan, Xiaoli, KOIZUMI, Satoshi, SEKIGUCHI, Takashi. Nanoprocessing of carbon materials using variable pressure scanning electron microscope. The 10th International Conference on New Diamond Science and Tec. 2005
  18. SEKIGUCHI, Takashi, Yuan, Xiaoli, NIITSUMA, Junichi. Fabrication of UHV-SEM equipped with Auger and cathodoluminescence systems and its application to the study of semiconductors. Scanning. 2005
  19. 新妻 潤一, 袁 暁利, 鈴木宏征, 中山佳彦, 藤井和博, 関口 隆史. 低真空走査型電子顕微鏡による炭素系材料の形状加工. 2005年春季第52回応用物理学関係連合講演会. 2005
  20. 廣崎 尚登, 解 栄軍, 木本 浩司, 関口 隆史, 山本 吉信, 末廣 隆之. 緑色蛍光体(β-SiAlON:Eu2+)の発光特性. 第52回応用物理学関連連合講演会. 2005
  21. 小野寺 恒信, 及川 英俊, 笠井均, 中西八郎, 関口 隆史. 銀で被覆されたポリジアセチレン複合型ナノ結晶の作製(II). 2005年(平成17年)春季 第52回応用物理学関係連合講演会. 2005
  22. 大垣 武, 両見 春樹, 大橋 直樹, 坂口 勲, 関口 隆史, 羽田 肇. MBE法により酸化亜鉛基板上へ作製した窒化インヂウム薄膜の構造. 日本セラミックス協会2005年年会. 2005
  23. ONODERA, TSUNENOBU, OIKAWA, Hidetoshi, 笠井均, 中西八郎, SEKIGUCHI, Takashi. Silver-Coated Polydiacetylene Nanocrystals for a Nonlinear Optical Medium. 8th International Conference on Organic Nonlinear Optics (ICONO'. 2005
  24. 関口 隆史. SEMを使ったカソードルミネッセンスによる半導体ナノ構造評価. 量子ビーム理工学最前線. 2005
  25. ONODERA, TSUNENOBU, Tan Zhenquan, OIKAWA, Hidetoshi, 笠井均, 中西八郎, SEKIGUCHI, Takashi. Silver-coated polydiacetylene nanocrystals fabricated by using surfactant as a binder. 3rd International Conference on Molecular Electronics and Bioele. 2005
  26. OHASHI, Naoki, SAITO, Noriko, SAKAGUCHI, Isao, LI, DI, SEKIGUCHI, Takashi, HANEDA, Hajime. Controlling of structures and properties of oxide thin films and interfaces. Japan-US workshop on the future of sensors and sensor systems. 2005
2004
  1. SEKIGUCHI, Takashi. Opportunities for Brilliant Indian Students for carrying our Excellent Doctral Research in Japan. International Symposium of Research Students on Materials Scienc. 2004
  2. SEKIGUCHI, Takashi, Yuan, Xiaoli, OHASHI, Naoki, 横山政昭. Cathodoluminescence characterization of semiconductor nanostructures using low energy electron beam. 3rd International Workshop on Nanoscale Spectroscopy and Nanotec. 2004
  3. OHASHI, Naoki, WANG, Yuguang, SEKIGUCHI, Takashi, RYOKEN, Haruki, TAGUCHI, Hiroyuki, OGAKI, Takeshi, ISHIGAKI, Takamasa, HANEDA, Hajime. Defect Structures in ZnO Causing Visible Luminescence.. MRS 2004 fall meeting. 2004
  4. 謝栄国, SEKIGUCHI, Takashi, SAKODA, Kazuaki, DS. Li, D.Yang. Fabrication and self-assembly of Monodisperse Cadmium Sulfide hollow spheres. 1st International Symposium on the Functionality of Organized Na. 2004
  5. 姚永昭, SEKIGUCHI, Takashi. Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metalorganic chemical vapor deposition. 1st International Symposium on the Functionality of Organized Na. 2004
  6. AMEKURA, Hiroshi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, KONO, Kenichiro, TAKEDA, Yoshihiko, KISHIMOTO, Naoki. Zinc oxide nanoparticles in SiO2 fabricated by ion implantation combined with thermal oxidation. 1st International Symposium on the Functionality of Organized Na. 2004
  7. NAGATA, Takahiro, PARHAT, AHMET, YAMAUCHI, Yasushi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Position Controlled GaN Nano-Structures Fabrication by Focused Ion Beam System. 1st International Symposium on the Functionality of Organized Na. 2004
  8. OGAKI, Takeshi, SUGIMURA, Shigeaki, OHASHI, Naoki, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime. APPLICATION OF ZINC OXIDE SINGLE CRYSTALLLINE SUBSTRATES FOR GROWTH OF GALLIUM NITRIDE-BASED FILMS. 3rd International Workshop on ZnO and Related Materials. 2004
  9. 袁 暁利, 関口 隆史, 李成奇, 伊藤俊. EBIC characterization of dislocation distribution in strained Si/SiGe. 日本学術振興会第145委員会第101回研究会. 2004
  10. OHASHI, Naoki, OGAKI, Takeshi, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, ISHIGAKI, Takamasa, HANEDA, Hajime. IDENTIFICATION OF GREEN AND YELLOW LUMINESCENCE OF. 3rd Internatinoal Workship on Zinc Oxide. 2004
  11. 大垣 武, 杉村 茂昭, 大橋 直樹, 坂口 勲, 関口 隆史, 羽田 肇. MBE法によりZnO単結晶基板上に作製したGaN薄膜の構造と特性. 日本セラミックス協会第17回秋季シンポジウム. 2004
  12. 関口 隆史. フォーカス電子ビームによる半導体のカソードルミネッセンス観察. 日本物理学会2004年秋季大会. 2004
  13. 小野寺 恒信, 及川 英俊, 笠井均, 中西八郎, 関口 隆史. 銀で被覆されたポリジアセチレン複合型ナノ結晶の作製. 第65回応用物理学会学術講演会. 2004
  14. 袁 暁利, 関口 隆史, 李成奇, 伊藤俊. EBIC法による歪Si/SiGe薄膜界面の転位の評価. 2004年秋季応用物理学会学術講演会. 2004
  15. LI, Jiguang, Wang, Xiaohui, KAMIYAMA, Hiroshi, ISHIGAKI, Takamasa, SEKIGUCHI, Takashi. RF-Plasma processing of Er-doped TiO2 nanoparticles. 7th APCPST & 17th SPSM. 2004
  16. NIITSUMA, Junichi, OIKAWA, Hidetoshi, SEKIGUCHI, Takashi, 鈴木宏征, 中山佳彦, 藤井和博, 牛木辰男, 山田貴穂, 木村英二. Development of low-vacuum scanning electron microscope-cathodoluminescence for applications to life science. 9th International Conference on Electronic Materials. 2004
  17. OHASHI, Naoki, ISHIGAKI, Takamasa, SEKIGUCHI, Takashi, TAGUCHI, Hiroyuki, WANG, Yuguang, SAKAGUCHI, Isao, HANEDA, Hajime. Effect of hydrogen doping on the properties of zinc oxide and its related alloys. MRS Spring meeting 2004. 2004
  18. 三井 正, 関口 隆史. 偏光近接場光学顕微鏡を用いた有機光導波路中を伝播する光の直接観察. 第51回応用物理学関係連合講演会. 2004
  19. 大橋 直樹, 関口 隆史, 石垣 隆正, 羽田 肇. 酸化亜鉛の欠陥・界面の評価と制御. 2004年春季応用物理学関係連合講演会(シンポジウム). 2004
  20. 大垣 武, 杉村 茂昭, 大橋 直樹, 坂口 勲, 関口 隆史, 羽田 肇. MBE 法によりZnO(0001), (0001)基板上へ作製したGaN 薄膜の構造と特性. 2004年春季応用物理学関係連合講演会. 2004
  21. 大垣 武, 杉村 茂昭, 大橋 直樹, 坂口 勲, 関口 隆史, 羽田 肇. MBE法による酸化亜鉛基板上への窒化ガリウム薄膜作製. 2004年度日本セラミックス協会年会. 2004
  22. Yuan, Xiaoli, SEKIGUCHI, Takashi, TAKASE, Masami, TANIGUCHI, Takashi. Characterization of p-n junction formed at the boundary of facets in cubic-BN using scanning electron microscope. APF9. 2004
  23. SEKIGUCHI, Takashi, 渡辺義夫. Cathodoluminescence study of InP nanowires grown on Si substrates. APF9. 2004
  24. MITSUI, Tadashi, SEKIGUCHI, Takashi. Polarization Properties of Propagation Light in Polymer Optical Waveguide Observed by Near-field Scanning Optical Microscopy. The 9th International Symposium on Advanced Physical Fields (APF. 2004

Patents TSV

Registered patents
  1. No. 6440128 エネルギー弁別電子検出器及びそれを用いた走査電子顕微鏡 (2018)
  2. No. 6229183 電子線後方散乱回折測定装置 (2017)
  3. No. 5979667 金属ケイ化物形成方法 (2016)
  4. No. 5979664 シリコン結晶鋳造炉 (2016)
  5. No. 5500543 硫化亜鉛ナノベルト、紫外線検知センサー及びこれらの製造法 (2014)
  6. No. 5464429 四角形の断面を有する単結晶シリコンの育成方法 (2014)
  7. No. 5435600 IV族半導体ナノ細線の製造方法 (2013)
  8. No. 5294238 電子素子 (2013)
  9. No. 5077863 低真空走査型電子顕微鏡を用いた炭素系材料の微細加工方法とその装置 (2012)
  10. No. 4873705 窒化インジウム(InN)あるいは高インジウム組成を有する窒化インジウムガリウム(InGaN)エピタキシャル薄膜の形成方法 (2011)
  11. No. 4863460 半導体ナノ細線を用いたプローブ及びその製造方法 (2011)
  12. No. 4635184 酸化亜鉛蛍光体とその製造法及び発光装置 (2010)
  13. No. 4096060 近接場光学顕微鏡及びそれを用いた偏光評価方法 (2008)
  14. No. 3849011 黄色みを帯びた発光をする発光材料とその製造法 (2006)
  15. No. 3834657 光集積回路の作製方法 (2006)
  16. No. 3721399 酸化亜鉛紫外発光体の製造方法 (2005)
  17. No. 3579689 吸熱性反応を利用した機能性ナノ材料の製造方法 (2004)
Patent applications
  1. No. 2014062044 四角形の単結晶シリコンウェ−ハ (2014)
  2. No. 2010120136 ヘテロナノワイヤーとその製造方法 (2010)
  3. No. 2009042213 ガスセンサー素子 (2009)
  4. No. 2007333619 半導体ナノ細線を用いたプローブ及びその製造方法 (2007)
  5. No. 2007319988 IV族半導体ナノ細線の製造方法並びに構造制御方法 (2007)
  6. No. 2007084851 金属被覆型有機結晶の製造方法 (2007)
  7. No. 2006010585 カソードルミネッセンス専用測定装置 (2006)
  8. No. WO2004096949 酸化亜鉛蛍光体とその製造法及び発光装置 (2004)
International patents
  1. No. WO2016047538A1 ENERGY-DISCRIMINATION ELECTRON DETECTOR AND SCANNING ELECTRON MICROSCOPE IN WHICH SAME IS USED (2016)
  2. No. US20100183494A1 METHOD FOR PREPARING FUNCTIONAL NANOMATERIALS UTILIZING ENDOTHERMIC REACTION (2010)
  3. No. EP1454880A4 METHOD FOR PREPARING FUNCTIONAL NANO-MATERIAL UTILIZING ENDOTHERMIC REACTION (2009)
  4. No. US20090130329A1 METHOD FOR FABRICATING METAL-COATED ORGANIC CRYSTAL (2009)
  5. No. EP1630218A4 ZINC OXIDE PHOSPHOR, PROCESS FOR PRODUCING THE SAME AND LIGHT EMITTING DEVICE (2009)
  6. No. US20070158615A1 Zinc oxide phosphor, process die producing the same and light emitting device (2007)
  7. No. WO2007034583A1 PROCESS FOR PRODUCING METAL COVERING-TYPE ORGANIC CRYSTAL (2007)
  8. No. EP1630218A1 ZINC OXIDE PHOSPHOR, PROCESS FOR PRODUCING THE SAME AND LIGHT EMITTING DEVICE (2006)
  9. No. KR2005100698A ZINC OXIDE PHOSPHOR, PROCESS FOR PRODUCING THE SAME AND LIGHT EMITTING DEVICE (2005)
  10. No. US20050002849A1 Method for preparing functional nanomaterials utilizing endothermic reaction (2005)
  11. No. WO2004096949A1 ZINC OXIDE PHOSPHOR, PROCESS FOR PRODUCING THE SAME AND LIGHT EMITTING DEVICE (2004)
  12. No. EP1454880A1 METHOD FOR PREPARING FUNCTIONAL NANO-MATERIAL UTILIZING ENDOTHERMIC REACTION (2004)

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