publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at
Paper 2022 1 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita, Hiroyuki Ota, Yukinori Morita Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) APL Materials 10 5 051110 https://doi.org/10.1063/5.0091661 2023-09-24 17:12:21 +0900
Paper 2021 1 Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition Journal of Vacuum Science & Technology A 39 6 062405 https://doi.org/10.1116/6.0001334 2023-09-24 17:12:21 +0900
Paper 2021 2 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−xO2-Based Metal-Ferroelectric-Semiconductor ECS Transactions 129 135 https://doi.org/10.1149/10404.0129ecst 2023-09-24 17:12:21 +0900
Paper 2021 3 Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress Japanese Journal of Applied Physics 60 SC SCCM01 https://doi.org/10.35848/1347-4065/abe685 2023-09-24 17:12:21 +0900
Paper 2021 4 Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis APL Materials 9 3 031111 https://doi.org/10.1063/5.0035848 2023-09-24 17:12:21 +0900
Paper 2021 5 Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3 Japanese Journal of Applied Physics 60 3 030903 https://doi.org/10.35848/1347-4065/abde54 2023-09-24 17:12:21 +0900
Paper 2020 1 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition Applied Physics Letters 117 23 232902 https://doi.org/10.1063/5.0029709 2023-09-24 17:12:21 +0900
Paper 2020 2 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer ECS Transactions 98 3 63 70 https://doi.org/10.1149/09803.0063ecst 2023-09-24 17:12:21 +0900
Paper 2019 1 Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 ECS Transactions 92 3 3 13 https://doi.org/10.1149/09203.0003ecst 2023-09-24 17:12:21 +0900
Paper 2019 2 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition Microelectronic Engineering 215 111013 https://doi.org/10.1016/j.mee.2019.111013 2023-09-24 17:12:21 +0900
Paper 2019 3 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers APL Materials 7 6 061107 https://doi.org/10.1063/1.5096626 2023-09-24 17:12:21 +0900
Paper 2018 1 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques ECS Transactions 86 6 31 38 https://doi.org/10.1149/08606.0031ecst 2023-09-24 17:12:21 +0900
Paper 2018 2 Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory Thin Solid Films 655 48 53 https://doi.org/10.1016/j.tsf.2018.02.010 2023-09-24 17:12:21 +0900
Paper 2017 1 Tomomi Sawada, Toshihide Nabatame, Thang Duy Dao, Ippei Yamamoto, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama, Tomoji Ohishi, Atsushi Ogura, Tadaaki Nagao plasma-enhanced atomic layer deposition法によるRuO2下部電極の表面平滑性の改善及びRuO2/TiO2/Al2O3/TiO2/RuO2キャパシタの特性 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 6 061503 https://doi.org/10.1116/1.4998425 2023-09-24 17:12:21 +0900
Paper 2017 2 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura Improvement in ferroelectricity of HfxZr1-xO2 thin film using ZrO2 seed layer Applied Physics Express 10 8 081501 https://doi.org/10.7567/apex.10.081501 2023-09-24 17:12:21 +0900