publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at Paper 2024 1 Yuto Uematsu, Takafumi Ishibe, Takaaki Mano, Akihiro Ohtake, Hideki T. Miyazaki, Takeshi Kasaya, Yoshiaki Nakamura Nature Communications 15 1 https://doi.org/10.1038/s41467-023-44165-3 2024-03-28 18:09:43 +0900 Paper 2024 2 Akihiro Ohtake, Takaaki Mano Japanese Journal of Applied Physics 63 3 03SP10 https://doi.org/10.35848/1347-4065/ad2032 2024-03-28 18:09:43 +0900 Paper 2023 1 Akihiro Ohtake, Takayuki Suga, Shunji Goto, Daisuke Nakagawa, Jun Nakamura Scientific Reports 13 1 https://doi.org/10.1038/s41598-023-45142-y 2024-03-28 18:09:43 +0900 Paper 2023 2 Xu Yang, Shisheng Li, Naoki Ikeda, Akihiro Ohtake, Yoshiki Sakuma Applied Surface Science 636 157756 https://doi.org/10.1016/j.apsusc.2023.157756 2024-03-28 18:09:43 +0900 Paper 2023 3 Akihiro Ohtake, Xu Yang Crystal Growth & Design 23 7 5001 5007 https://doi.org/10.1021/acs.cgd.3c00244 2024-03-28 18:09:43 +0900 Paper 2023 4 Takaaki Mano, Akihiro Ohtake, Takuya Kawazu, Hideki T. Miyazaki, Yoshiki Sakuma ACS Applied Materials & Interfaces 15 24 29636 29642 https://doi.org/10.1021/acsami.3c05725 2024-03-28 18:09:43 +0900 Paper 2022 1 Akihiro Ohtake, Xu Yang, Jun Nara Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy npj 2D Materials and Applications 6 1 https://doi.org/10.1038/s41699-022-00310-y 2024-03-28 18:09:43 +0900 Paper 2021 1 Takaaki Mano, Akihiro Ohtake, Neul Ha, Takeshi Noda, Yoshiki Sakuma, Takashi Kuroda, Kazuaki Sakoda Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy Crystal Growth & Design 21 7 3947 3953 https://doi.org/10.1021/acs.cgd.1c00276 2024-03-28 18:09:43 +0900 Paper 2021 2 Akihiro Ohtake, Yoshiki Sakuma Two-Dimensional WSe2/MoSe2 Heterostructures Grown by Molecular-Beam Epitaxy The Journal of Physical Chemistry C 125 20 11257 11261 https://doi.org/10.1021/acs.jpcc.1c02780 2024-03-28 18:09:43 +0900 Paper 2021 3 Marco Abbarchi, Takaaki Mano, Takashi Kuroda, Akihiro Ohtake, Kazuaki Sakoda Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy Nanomaterials 11 2 443 https://doi.org/10.3390/nano11020443 2024-03-28 18:09:43 +0900 Paper 2020 1 Akihiro Ohtake, Takaaki Mano, Yoshiki Sakuma Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates Scientific Reports 10 1 https://doi.org/10.1038/s41598-020-61527-9 2024-03-28 18:09:43 +0900 Paper 2020 2 Akihiro Ohtake, Yoshiki Sakuma Effect of Substrate Orientation on MoSe2/GaAs Heteroepitaxy The Journal of Physical Chemistry C 124 9 5196 5203 https://doi.org/10.1021/acs.jpcc.9b11278 2024-03-28 18:09:43 +0900 Paper 2019 1 Akihiro Ohtake, Yoshiki Sakuma Heteroepitaxy of MoSe2 on Si(111) substrates: Role of surface passivation Applied Physics Letters 114 5 053106 https://doi.org/10.1063/1.5083974 2024-03-28 18:09:43 +0900 Paper 2018 1 Akihiro Ohtake, Shunji Goto, Jun Nakamura Atomic structure and passivated nature of the Se-treated GaAs(111)B surface Scientific Reports 8 1 https://doi.org/10.1038/s41598-018-19560-2 2024-03-28 18:09:43 +0900 Paper 2018 2 Akihiro Ohtake, Takaaki Mano, Kazutaka Mitsuishi, Yoshiki Sakuma Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers ACS Omega 3 11 15592 15597 https://doi.org/10.1021/acsomega.8b02359 2024-03-28 18:09:43 +0900 Paper 2017 1 Akihiro Ohtake, Yoshiki Sakuma Evolution of Surface and Interface Structures in Molecular-Beam Epiaxy of MoSe2 on GaAs(111)A and (111)B Crystal Growth & Design 17 1 363 367 https://doi.org/10.1021/acs.cgd.6b01605 2024-03-28 18:09:43 +0900 Paper 2016 1 Takaaki Mano, Kazutaka Mitsuishi, Neul Ha, Akihiro Ohtake, Andrea Castellano, Stefano Sanguinetti, Takeshi Noda, Yoshiki Sakuma, Takashi Kuroda, Kazuaki Sakoda Growth of metamorphic InGaAs on GaAs(111)A: counteracting lattice mismatch by inserting a thin InAs interlayer Crystal Growth & Design 16 9 5412 5417 https://doi.org/10.1021/acs.cgd.6b00899 2024-03-28 18:09:43 +0900 Paper 2016 2 Akira Akaishi, Kenta Funatsuki, Akihiro Ohtake, Jun Nakamura First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 × 2) surface Japanese Journal of Applied Physics 55 8S1 08NB21 https://doi.org/10.7567/jjap.55.08nb21 2024-03-28 18:09:43 +0900 Paper 2016 3 Akihiro Ohtake, Atsushi Hagiwara, Kazuya Okukita, Kenta Funatsuki, Jun Nakamura Mn-Induced Surface Reconstructions on GaAs(001) The Journal of Physical Chemistry C 120 11 6050 6062 https://doi.org/10.1021/acs.jpcc.5b12309 2024-03-28 18:09:43 +0900 Paper 2015 1 Neul Ha, Takaaki Mano, Ying-Lin Chou, Yu-Nien Wu, Shun-Jen Cheng, Juanita Bocquel, Paul M. Koenraad, Akihiro Ohtake, Yoshiki Sakuma, Kazuaki Sakoda, Takashi Kuroda Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion Physical Review B 92 7 https://doi.org/10.1103/physrevb.92.075306 2024-03-28 18:09:43 +0900 Paper 2015 2 Bongseok Choi, Masanobu Iwanaga, Hideki T. Miyazaki, Yoshimasa Sugimoto, Akihiro Ohtake, Kazuaki Sakoda Overcoming metal-induced fluorescence quenching on plasmo-photonic metasurfaces coated by a self-assembled monolayer Chemical Communications 51 57 11470 11473 https://doi.org/10.1039/c5cc04426j 2024-03-28 18:09:43 +0900 Paper 2015 3 Neul Ha, Takaaki Mano, Takashi Kuroda, Kazutaka Mitsuishi, Akihiro Ohtake, Andrea Castellano, Stefano Sanguinetti, Takeshi Noda, Yoshiki Sakuma, Kazuaki Sakoda Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A Japanese Journal of Applied Physics 54 4S 04DH07 https://doi.org/10.7567/jjap.54.04dh07 2024-03-28 18:09:43 +0900 Paper 2015 4 Akihiro Ohtake, Neul Ha, Takaaki Mano Extremely high- and low-density of Ga droplets on GaAs{111}A,B: Surface-polarity dependence Crystal Growth & Design 15 1 485 488 https://doi.org/10.1021/cg501545n 2024-03-28 18:09:43 +0900 Paper 2014 1 Noriyuki Miyata, Akihiro Ohtake, Masakazu Ichikawa, Takahiro Mori, Tetsuji Yasuda Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces Applied Physics Letters 104 23 232104 https://doi.org/10.1063/1.4882643 2024-03-28 18:09:43 +0900 Paper 2014 2 Akihiro Ohtake, Takaaki Mano, Atsushi Hagiwara, Jun Nakamura Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions Crystal Growth & Design 14 6 3110 3115 https://doi.org/10.1021/cg500355f 2024-03-28 18:09:43 +0900 Paper 2014 3 Akihiro Ohtake, Takaaki Mano, Noriyuki Miyata, Takahiro Mori, Tetsuji Yasuda Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors Applied Physics Letters 104 3 032101 https://doi.org/10.1063/1.4862542 2024-03-28 18:09:43 +0900 Paper 2013 1 Akihiro Ohtake, Atsushi Hagiwara, Jun Nakamura Controlled incorporation of Mn in GaAs: Role of surface reconstructions Physical Review B 87 16 https://doi.org/10.1103/physrevb.87.165301 2024-03-28 18:09:43 +0900 Paper 2012 1 Akihiro Ohtake Cation-anion mixed-dimer structure of Al-induced (2×4) reconstruction on InAs(001) Surface Science 606 23-24 1886 1891 https://doi.org/10.1016/j.susc.2012.07.034 2024-03-28 18:09:43 +0900 Paper 2012 2 Akihiro Ohtake, Toru Akiyama Tomonori Ito As-rich (2×2) surface reconstruction on GaAs(111)A Surface Science 606 23-24 1864 1870 https://doi.org/10.1016/j.susc.2012.07.029 2024-03-28 18:09:43 +0900 Paper 2012 3 Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi Japanese Journal of Applied Physics 51 6R 065701 https://doi.org/10.1143/jjap.51.065701 2024-03-28 18:09:43 +0900 Paper 2011 1 Akihiro Ohtake, Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda Japanese Journal of Applied Physics 50 10 10PD01 https://doi.org/10.1143/jjap.50.10pd01 2024-03-28 18:09:43 +0900 Paper 2011 2 Akihiro Ohtake Atomic-scale characterization of the N incorporation on GaAs(001) Journal of Applied Physics 110 3 033506 https://doi.org/10.1063/1.3609066 2024-03-28 18:09:43 +0900 Paper 2011 3 Akihiro Ohtake, Kazutaka Mitsuishi Polarity controlled InAs{111} films grown on Si(111) Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 3 031804 https://doi.org/10.1116/1.3589807 2024-03-28 18:09:43 +0900 Paper 2010 1 Takaaki Mano, Marco Abbarchi, Takashi Kuroda, Brian McSkimming, Akihiro Ohtake, Kazutaka Mitsuishi, Kazuaki Sakoda Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting Applied Physics Express 3 6 065203 https://doi.org/10.1143/apex.3.065203 2024-03-28 18:09:43 +0900 Paper 2010 2 Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda, Akihiro Ohtake Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures Applied Physics Express 3 3 035701 https://doi.org/10.1143/apex.3.035701 2024-03-28 18:09:43 +0900 Paper 2009 1 Akihiro Ohtake, Motoi Hirayama, Jun Nakamura, Akiko Natori Physical Review B 80 23 https://doi.org/10.1103/physrevb.80.235329 2024-03-28 18:09:43 +0900 Paper 2009 2 Akihiro Ohtake, Tetsuji Yasuda, Noriyuki Miyata Anisotropic kinetics on growing Ge(001) surfaces Surface Science 603 5 826 830 https://doi.org/10.1016/j.susc.2008.12.038 2024-03-28 18:09:43 +0900 Paper 2008 1 YASUDA Testuji, MIYATA Noriyuki, OHTAKE, Akihiro Influence of Initial Surface Reconstruction on the Interface Structure of HfO2/GaAs APPLIED SURFACE SCIENCE 7565 7568 2024-03-28 18:09:43 +0900 Paper 2008 2 Akihiro Ohtake Surface reconstructions on GaAs(001) Surface Science Reports 63 7 295 327 https://doi.org/10.1016/j.surfrep.2008.03.001 2024-03-28 18:09:43 +0900 Paper 2008 3 Akihiro Ohtake, Jun Nara, Tetsuji Yasuda, Noriyuki Miyata Ge-induced (1x2) surface reconstruction on GaAs(001): A precursor to As segregation Physical Review B 77 19 https://doi.org/10.1103/physrevb.77.195309 2024-03-28 18:09:43 +0900 Paper 2007 1 Akihiro Ohtake Structure and composition of Ga-rich (6x6) reconstructions on GaAs(001) Physical Review B 75 15 https://doi.org/10.1103/physrevb.75.153302 2024-03-28 18:09:43 +0900 Paper 2006 1 Akihiro Ohtake Physical Review B 74 16 https://doi.org/10.1103/physrevb.74.165322 2024-03-28 18:09:43 +0900 Paper 2006 2 Akihiro Ohtake, Nobuyuki Koguchi Applied Physics Letters 89 8 083108 https://doi.org/10.1063/1.2338530 2024-03-28 18:09:43 +0900 Paper 2006 3 K. Seino, W. G. Schmidt, A. Ohtake Physical Review B 73 3 https://doi.org/10.1103/physrevb.73.035317 2024-03-28 18:09:43 +0900 Paper 2006 4 Akihiro Ohtake Physical Review B 73 3 https://doi.org/10.1103/physrevb.73.033301 2024-03-28 18:09:43 +0900 Paper 2004 1 Akihiro Ohtake, Pavel Kocán, Kaori Seino, Wolf G. Schmidt, Nobuyuki Koguchi Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the(4×6)Phase Physical Review Letters 93 26 https://doi.org/10.1103/physrevlett.93.266101 2024-03-28 18:09:43 +0900 Paper 2004 2 Pavel Kocán, Akihiro Ohtake, Nobuyuki Koguchi Structural features of Ga-rich GaAs(001) surfaces: Scanning tunneling microscopy study Physical Review B 70 20 https://doi.org/10.1103/physrevb.70.201303 2024-03-28 18:09:43 +0900 Paper 2004 3 Norihisa Oyama, Akihiro Ohtake, Shiro Tsukamoto, Nobuyuki Koguchi, Takahisa Ohno Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations Japanese Journal of Applied Physics 43 No. 11A L1422 L1424 https://doi.org/10.1143/jjap.43.l1422 2024-03-28 18:09:43 +0900 Paper 2004 4 OHTAKE, Akihiro, 中村淳, KOGUCHI, Nobuyuki, 名取晃子 GaAs(001)-c(4x4)表面のGa-Asダイマー構造 SURFACE SCIENCE 58 62 2024-03-28 18:09:43 +0900 Paper 2004 5 Akihiro Ohtake, Pavel Kocán, Jun Nakamura, Akiko Natori, Nobuyuki Koguchi Kinetics in Surface Reconstructions on GaAs(001) Physical Review Letters 92 23 https://doi.org/10.1103/physrevlett.92.236105 2024-03-28 18:09:43 +0900