publication_type publication_year number author title doi reported_at Proceeding 2019 1 Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress https://doi.org/10.1109/edtm.2019.8731167 2024-03-29 20:28:36 +0900 Proceeding 2015 1 DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography 2024-03-29 20:28:36 +0900 Proceeding 2012 1 NABATAME, Toshihide, KIMURA, Masayuki, YAMADA, Hiroyuki, OHI, Akihiko, CHIKYOW, Toyohiro, Tomoji Ohishi (TaC)1-xAlx電極からのAl拡散によるHfO2ゲートスタックにおけるVfbシフトのメカニズム 2024-03-29 20:28:36 +0900 Proceeding 2011 1 Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow high-k/SiO2/Siスタック構造における酸素移動がVfbシフトへ及ぼす役割 https://doi.org/10.1149/1.3572296 2024-03-29 20:28:36 +0900 Proceeding 2010 1 Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow Hf-酸化物ゲートスタックのVfbシフトへ及ぼす酸素の役割 https://doi.org/10.1109/icsict.2010.5667509 2024-03-29 20:28:36 +0900 Proceeding 2010 2 Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow Pt/high-k/SiO2/Si MOSキャパシタにおけるイオン性/共有結合性酸化物のヘテロ界面がVfbシフトへ果たす役割 https://doi.org/10.1149/1.3481592 2024-03-29 20:28:36 +0900