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中払 周
Address
305-0044 茨城県つくば市並木1-1 [アクセス]
  • 論文・発表

[研究論文] |[書籍] |[会議録] |[口頭発表] |[特許]

研究論文 TSV

2019
  1. Nurul Fariha Ahmad, Katsuyoshi Komatsu, Takuya Iwasaki, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta, Yutaka Wakayama, Abdul Manaf Hashim, Yoshifumi Morita, Satoshi Moriyama, Shu Nakaharai. Fabry–Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts. Scientific Reports. 9 [1] (2019) 10.1038/s41598-019-39909-5
  2. Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Shu Nakaharai, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Keiji Ueno, Hidekazu Tanaka. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides. ACS Applied Materials & Interfaces. 11 [40] (2019) 36871-36879 10.1021/acsami.9b13763
  3. Bablu Mukherjee, Amir Zulkefli, Ryoma Hayakawa, Yutaka Wakayama, Shu Nakaharai. Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes. ACS Photonics. 6 [9] (2019) 2277-2286 10.1021/acsphotonics.9b00580
  4. Elisseos Verveniotis, Yuji Okawa, Shu Nakaharai, Shinichi Ogawa, Tomonobu Nakayama, Masakazu Aono, Christian Joachim. Observation of room temperature electronic localization through a single graphene layer on sapphire. Japanese Journal of Applied Physics. 58 [5] (2019) 055007 10.7567/1347-4065/ab0884
  5. Nurul Fariha Ahmad, Takuya Iwasaki, Katsuyoshi Komatsu, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta, Yutaka Wakayama, Abdul Manaf Hashim, Yoshifumi Morita, Satoshi Moriyama, Shu Nakaharai. Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime. Applied Physics Letters. 114 [2] (2019) 023101 10.1063/1.5067296
2016
  1. 中払 周, 小川 真一, 塚越 一仁, 佐藤 信太郎, 横山 直樹. ウェハスケール・トップダウン加工でのグラフェントランジスタ試作. カーボンナノチューブ・グラフェンの 応用研究最前線. (2016) 201-207
  2. 中払 周. 遷移金属ダイカルコゲナイド半導体α−MoTe2のトランジスタ極性制御. カルコゲナイド系層状物質の最新研究. (2016) 204-216
  3. Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning. ACS Applied Materials & Interfaces. 8 [23] (2016) 14732-14739 10.1021/acsami.6b02036
  4. Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi. Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts. Nano Letters. 16 [4] (2016) 2720-2727 10.1021/acs.nanolett.6b00390
  5. Shunpei Takeshita, Sadashige Matsuo, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Tomonori Arakawa, Kensuke Kobayashi. Anomalous behavior of 1/f noise in graphene near the charge neutrality point. Applied Physics Letters. 108 [10] (2016) 103106 10.1063/1.4943642
2015
  1. Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Kensuke Kobayashi. Parity effect of bipolar quantum Hall edge transport around graphene antidots. Scientific Reports. 5 [1] (2015) 10.1038/srep11723
  2. Sadashige Matsuo, Shunpei Takeshita, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Kensuke Kobayashi. Edge mixing dynamics in graphene p–n junctions in the quantum Hall regime. Nature Communications. 6 [1] (2015) 10.1038/ncomms9066
  3. Yen-Fu Lin, Yong Xu, Che-Yi Lin, Yuen-Wuu Suen, Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi. Origin of Noise in Layered MoTe2Transistors and its Possible Use for Environmental Sensors. Advanced Materials. 27 [42] (2015) 6612-6619 10.1002/adma.201502677
  4. Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen-Fu Lin, Song-Lin Li, Kazuhito Tsukagoshi. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors. ACS Nano. 9 [6] (2015) 5976-5983 10.1021/acsnano.5b00736
  5. Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi, Songlin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit. Japanese Journal of Applied Physics. 54 [4S] (2015) 04DN06 10.7567/jjap.54.04dn06
  6. Mahito Yamamoto, Sudipta Dutta, Shinya Aikawa, Shu Nakaharai, Katsunori Wakabayashi, Michael S. Fuhrer, Keiji Ueno, Kazuhito Tsukagoshi. Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2. Nano Letters. 15 [3] (2015) 2067-2073 10.1021/nl5049753
2014
  1. Song-Lin Li, Katsuyoshi Komatsu, Shu Nakaharai, Yen-Fu Lin, Mahito Yamamoto, Xiangfeng Duan, Kazuhito Tsukagoshi. Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers. ACS Nano. 8 [12] (2014) 12836-12842 10.1021/nn506138y
  2. Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song-Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors. IEEE Transactions on Nanotechnology. 13 [6] (2014) 1039-1043 10.1109/tnano.2014.2313134
  3. Katsuyoshi Komatsu, Shinya Kasai, Song-Lin Li, Shu Nakaharai, Nobuhiko Mitoma, Mahito Yamamoto, Kazuhito Tsukagoshi. Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier. Applied Physics Express. 7 [8] (2014) 085101 10.7567/apex.7.085101
  4. Yen-Fu Lin, Yong Xu, Sheng-Tsung Wang, Song-Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen-Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi. Ambipolar MoTe2Transistors and Their Applications in Logic Circuits. Advanced Materials. 26 [20] (2014) 3263-3269 10.1002/adma.201305845
  5. K Tsukagoshi, S-L Li, H Miyazaki, A Aparecido-Ferreira, S Nakaharai. Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics. Journal of Physics D: Applied Physics. 47 [9] (2014) 094003 10.1088/0022-3727/47/9/094003
2013
  1. Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song-Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Current on-off operation of graphene transistor with dual gates and He ion irradiated channel. physica status solidi (c). 10 [11] (2013) 1608-1611 10.1002/pssc.201300262
  2. Yen-Fu Lin, Wenwu Li, Song-Lin Li, Yong Xu, Alex Aparecido-Ferreira, Katsuyoshi Komatsu, Huabin Sun, Shu Nakaharai, Kazuhito Tsukagoshi. Barrier inhomogeneities at vertically stacked graphene-based heterostructures. Nanoscale. 6 [2] (2013) 795-799 10.1039/c3nr03677d
  3. 中払 周, 佐藤信太郎. 新しいグラフェントランジスター. パリティ. 28 [10] (2013) 40-42
  4. Song-Lin Li, Katsunori Wakabayashi, Yong Xu, Shu Nakaharai, Katsuyoshi Komatsu, Wen-Wu Li, Yen-Fu Lin, Alex Aparecido-Ferreira, Kazuhito Tsukagoshi. Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors. Nano Letters. 13 [8] (2013) 3546-3552 10.1021/nl4010783
  5. Mei Yin Chan, Katsuyoshi Komatsu, Song-Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates. Nanoscale. 5 [20] (2013) 9572 10.1039/c3nr03220e
  6. Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Shingo Suzuki, Song-Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Conduction Tuning of Graphene Based on Defect-Induced Localization. ACS Nano. 7 [7] (2013) 5694-5700 10.1021/nn401992q
  7. 中払 周, 塚越 一仁. ランダムなポテンシャル擾乱を導入したグラフェンの金属‐絶縁体転移と電気伝導の電界制御. パリティ. 28 [5] (2013) 32-34
  8. 中払 周. 新しいグラフェントランジスタの動作原理とその応用. マテリアルステージ. 13 [2] (2013) 56-59

書籍 TSV

2016
  1. NAKAHARAI, Shu, OGAWA Shinichi, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki . ウェハスケール・トップダウン加工でのグラフェントランジスタ試作. カーボンナノチューブ・グラフェンの 応用研究最前線. 2016 , 201-207
2012
  1. TSUKAGOSHI, Kazuhito, NAKAHARAI, Shu. グラフェンの伝導電荷極性制御と素子化の試み. グラフェンの機能と応用展望II. 2012 , 196-206

会議録 TSV

口頭発表 TSV

2019
  1. 守田佳史, 森山悟士, 小松 克伊, 遠藤 滉亮, 岩崎 拓哉, 中払 周, 野口裕, 渡辺 英一郎, 若山裕, 津谷 大樹, 渡邊 賢司, 谷口 尚. Superconductivity in Bilayer Graphene/hBN Superlattices II – More on Experiments and Possible Scenarios –. RPGR2019, The 11th annual Recent Progress in Graphene & Two-dimensional Materials Research Conference. 2019
  2. 中払周, ヌルルファリハビンチ アマド, 小松 克伊, 岩崎 拓哉, 渡邊 賢司, 若山裕, 谷口 尚, アブドゥル マナフ ハシム, 守田佳史, 水田 博, 森山悟士. Fabry–Pérot resonances in narrowly separated p-n interfaces in hBN/graphene/hBN with quantum point contact. Recent Progress in Graphene & 2D Materials Research. 2019
  3. MUKHERJEE Bablu, IWASAKI Takuya, Bin ZULKEFLI Mohd Amir, WATANABE Kenji, TANIGUCHI Takashi, WAKAYAMA Yutaka, NAKAHARAI Shu. 2D van-der-Waals Multilayer-ReS2/h-BN/Graphene Heterostructures Based Non-Volatile Memory Device for IoT Era. International Conference on Materials for Advanced Technologies (ICMAT). 2019
2018
  1. IWASAKI, Takuya, Gabriel Agbonlahor, Manoharan Muruganathan, Masashi Akabori, Yoshifumi Morita, MORIYAMA, Satoshi, WAKAYAMA, Yutaka, Hiroshi Mizuta, NAKAHARAI, Shu. ヘリウムイオン照射グラフェンの負の磁気抵抗. 第79回春季応用物理学会学術講演会. 2018
  2. Bin ZULKEFLI, Mohd Amir, MUKHERJEE, Bablu, WATANABE, Kenji, TANIGUCHI, Takashi, WAKAYAMA, Yutaka, NAKAHARAI, Shu. ReS2/SiO2とReS2/hBN 電界効果トランジスタの電荷トラップとヒストリシス特性. The 79th JSAP Autumn Meeting 2018. 2018
  3. NAKAHARAI, Shu, MUKHERJEE, Bablu, Bin ZULKEFLI, Mohd Amir, UENO Keiji, WAKAYAMA, Yutaka. Role of Traps in Few Layer n-ReS2 Phototransistor on top of p-MoTe2 Layer. 79th JSAP Autumn Meeting 2018. 2018
  4. マッカージーバブル, ズルケフリアミール, 早川竜馬, 若山裕, 中払周. Few-Layer ReS2 based Vertical p-n van der Waals Junction for Photosensing. SSDM 2018, 50th annual conference. 2018
  5. NURUL FARIHA BINTI, Ahmad, KOMATSU, Katsuyoshi, MORIYAMA, Satoshi, Yoshifumi Morita, WATANABE, Kenji, TANIGUCHI, Takashi, Abdul Manaf Hashim, WAKAYAMA, Yutaka, NAKAHARAI, Shu. Gap Width Dependence of Transport through Quantum Point Contact in hBN/Graphene/hBN in the Quantum Hall Regime. 50th International Conference on Solid State Devices and Materia. 2018
  6. MUKHERJEE, Bablu, Bin ZULKEFLI, Mohd Amir, HAYAKAWA, Ryoma, WAKAYAMA, Yutaka, NAKAHARAI, Shu. Few-Layer ReS2 based Vertical p-n van der Waals Junction for Photosensing. SSDM 2018, 50th annual conference. 2018
  7. NAKAHARAI, Shu, Shinich Ogawa, VERVENIOTIS, Elissaios, OKAWA, Yuji, AONO, Masakazu, JOACHIM, Christian. In-situ measurement of electron conduction modulation in graphene by helium ion beam irradiation. 2nd international HeFIB conference on Helium and emerging Focuse. 2018
2016
  1. NAKAHARAI, Shu. Transition Metal Dichalcogenide Semiconductors for Low-Power Nanoelectronics. 4th Malaysia 2D Materials and Carbon Nanotube Workshop. 2016
  2. MATSUO Sadashige, TAKESHITA Shunpei, TANAKA Takahiro, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito, MORIYAMA Takahiro, ONO Teruo, KOBAYASHI Kensuke. グラフェン量子ホール状態におけるpn接合でのショット雑音. 日本物理学会 2016年秋季大会 . 2016
  3. MATSUO Sadashige, TAKESHITA Shunpei, TANAKA Takahiro, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito, MORIYAMA Takahiro, ONO Teruo, KOBAYASHI Kensuke. Edge mixing dynamics in a quantum Hall pn junction of graphene. 9 Intl Conf on Physics&Applic of SpinRelated Phenomena in Solids. 2016
  4. MAKAROVA, Marina Vadimovna, OKAWA, Yuji, NAKAHARAI, Shu, VERVENIOTIS, Elissaios, TANIGUCHI, Takashi, JOACHIM, Christian, AONO, Masakazu. Electrical studies of flat diacetylene layers on h-BN using nanoelectrodes. ISOME 2016. 2016
  5. YAMAMOTO, Mahito, NAKAHARAI, Shu, UENO Keiji, TSUKAGOSHI, Kazuhito. WSe2表面酸化物のp型コンタクト・ドーパント応用. 第63回応用物理学会春季学術講演会. 2016
  6. NAKAHARAI, Shu, YAMAMOTO, Mahito, UENO Keiji, TSUKAGOSHI, Kazuhito. Weak Fermi Level Pinning Effect in Schottky Junction of α-MoTe2. APS March Meeting 2016. 2016
  7. NAKAHARAI, Shu, YAMAMOTO, Mahito, UENO Keiji, TSUKAGOSHI, Kazuhito. Schottky Barrier Control in α-MoTe2 for Ambipolar Carrier Transport. MANA International Symposium 2016. 2016
  8. YAMAMOTO, Mahito, KIZU, Takio, NAKAHARAI, Shu, UENO Keiji, TSUKAGOSHI, Kazuhito. Optoelectronic memory based on single-layer WSe2 covered with WOx. MANA International Symposium 2016. 2016
2015
  1. YAMAMOTO, Mahito, NAKAHARAI, Shu, UENO Keiji, TSUKAGOSHI, Kazuhito. WSe2原子層の層数制御酸化とその界面. 第76回応用物理学会秋季学術講演会. 2015
  2. NAKAHARAI, Shu, YAMAMOTO, Mahito, UENO Keiji, LIN, Yen-Fu, LI, Songlin, TSUKAGOSHI, Kazuhito. 遷移金属ダイカルコゲナイドα-MoTe2 のショットキー接合における注入キャリアの極性. 第76回応用物理学会秋季学術講演会. 2015
  3. Takeshita Shunpei, Matsuo Sadashige, Tanaka Takahiro, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito, Moriyama Takahiro, Ono Teruo, Kobayashi Kensuke. Bias-voltage-dependent 1/f noise in graphene device. Joint Conference EP2DS-21 / MSS-17. 2015
  4. MAKAROVA, Marina Vadimovna, VERVENIOTIS, Elissaios, NAKAHARAI, Shu, TANIGUCHI, Takashi, OKAWA, Yuji, AONO, Masakazu. Cleaning of Graphene and h-BN Surfaces after Lithography Process. EM-NANO 2015. 2015
  5. NAKAHARAI, Shu, IIJIMA Tomohiko , OGAWA Shinichi , YAGI Katsunori , HARADA Naoki, HAYASHI Kenjiro, KONDO Daiyu, TAKAHASHI Makoto, LI, Songlin, YAMAMOTO, Mahito, LIN, Yen-Fu, UENO Keiji, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. 原子薄膜の電気的極性可変トランジスタ. 第182回 表面・界面・シリコン材料研究委員会研究集会. 2015
  6. NAKAHARAI, Shu. Quantum Transport of Charge Carriers in Graphene and its Application to Nanoelectronics. 2015 International Conference on Low Dimensional Science. 2015
  7. Takeshita Shunpei , Matsuo Sadashige, Tanaka Takahiro , NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito, Moriyama Takahiro, Ono Teruo, Kobayashi Kensuke. グラフェン p-n接合における 1/ f雑音の測定. 日本物理学会第70回年次大会. 2015
  8. NAKAHARAI, Shu, YAMAMOTO, Mahito, Ueno Keiji, LIN, Yen-Fu, LI, Songlin, TSUKAGOSHI, Kazuhito. Polarity-Reversible Transistors Based on Atomically-Thin Film of α-MoTe2. MANA International Symposium 2015 . 2015
  9. NAKAHARAI, Shu, YAMAMOTO, Mahito, Ueno Keiji, LIN, Yen-Fu, LI, Songlin, TSUKAGOSHI, Kazuhito. Electrostatic control of polarity of MoTe2 transistors with dual top gates. APS March Meeting 2015. 2015
2014
  1. LIN, Yen-Fu, XU, Yong, Wang Sheng-Tsung , LI, Songlin, YAMAMOTO, Mahito, FERREIRA, Alex Aparecido, LI, Wenwu, SUN, Huabin, NAKAHARAI, Shu, Jian Wen-Bin , Ueno Keiji, TSUKAGOSHI, Kazuhito. Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits. FON ’04. 2014
  2. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, YAGI Katsunori, HARADA Naoki, HAYASHI Kenjiro, KONDO Daiyu, TAKAHASHI Makoto, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Graphene Logic Circuits Based on Polarity Reversible Transistors. Recent Progress in Graphene Research 2014. 2014
  3. LIN, Yen-Fu, XU, Yong, WANG Sheng-Tsung , LI, Songlin, YAMAMOTO, Mahito, FERREIRA, Alex Aparecido, LI, Wenwu, SUN, Huabin, NAKAHARAI, Shu, JIAN Wen-Bin , UENO Keiji, TSUKAGOSHI, Kazuhito. Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits. Recent Progress in Graphene Research 2014(RPGR2014). 2014
  4. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, YAGI Katsunori, HARADA Naoki, HAYASHI Kenjiro, KONDO Daiyu, TAKAHASHI Makoto, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. CVD成長したグラフェンを用いたトランジスタのウェハスケール作製. 2014年第75回応用物理学会秋季学術講演会. 2014
  5. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, YAGI Katsunori, HARADA Naoki, HAYASHI Kenjiro, KONDO Daiyu, TAKAHASHI Makoto, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Wafer Scale Fabrication of Transistors on CVD-Grown Graphene and its Application to Inverter Circuit. International Conference on Solid State Devices and Materials. 2014
  6. TAKESHITA Shunpei , MATSUO Sadashige, TANAKA Takahiro, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito, MOEIYAMA Takahiro, ONO Teruo, KOBAYASHI Kensuke. グラフェンpn接合における伝導度測定とショット雑音の試み. 日本物理学会年次大会 秋季大会. 2014
  7. NAKAHARAI, Shu. Defect-Induced Metal-Insulator Transition in Graphene. Energy Materials Nanotechnology Summer Meeting. 2014
  8. S.Matsuo, T.Moriyama, T.Ono, K.Kobayashi, KOMATSU, Katsuyoshi, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito. PN接合を用いたグラフェン量子ホールエッジ状態のカイラリティ制御. 日本物理学会第69回年次大会. 2014
  9. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Defect-Induced Carrier Localization in Helium Ion Irradiated Graphene. IWEPNM 2014. 2014
  10. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Charge Transport Control of Graphene by Helium Ion Irradiation. MANA International Symposium 2014. 2014
  11. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Field Effect Control of Current in Ion Irradiated Graphene and its Application to Transistors. TNT Japan 2014. 2014
2013
  1. TSUKAGOSHI, Kazuhito, LI, Songlin, CHAN, Mei Yin, LIN, Yen-Fu, LI, Wenwu, NAKAHARAI, Shu. Scattering property in two-dimensional semiconductive atomic-scale films. 2D Materials and Devices Beyond Graphene. 2013
  2. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Field Effect Control of Carrier Conduction in He Ion Irradiated Graphene. AVS 60th International Symposium and Exhibition. 2013
  3. LIN, Yen-Fu, LI, Wenwu, LI, Songlin, XU, Yong, FERREIRA, Alex Aparecido, KOMATSU, Katsuyoshi, SUN, Huabin, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito. Barrier inhomogeneities at vertically stacked graphene-based heterostructures. Recent Progress in Graphene Research (RPGR2013). 2013
  4. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, LI, Songlin, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. Defect-Induced Localization of Carriers in Graphene and its Applications to Electronics. The 5th International Conference on Recent Progress in Graphene . 2013
  5. NAKAHARAI, Shu, T.Iijima, S.Ogawa, TSUKAGOSHI, Kazuhito, S.Sato, N.Yokoyama. Current On-Off Operation of Graphene Transistor with Dual Gates and He Ion Irradiated Channerent-rectification. ISCS2013. 2013
  6. FERREIRA, Alex Aparecido, MIYAZAKI, Hisao, LI, Songlin, KOMATSU, Katsuyoshi, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito. Electrically controlled bilayer graphene junctions with an enhanced current-rectification. SCS2013. 2013
  7. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. デュアルゲート構造とヘリウムイオン照射チャネルを有するグラフェントランジスタの極性可変動作. 応用物理学会春季学術講演会. 2013
  8. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. al-GElectrostatically-Reversible Polarity of Duated Graphene Transistors with He Ion Irradiated Channel. Functionality-Enhanced Devices Workshop (FED. 2013
  9. TSUKAGOSHI, Kazuhito, MIYAZAKI, Hisao, LI, Songlin, FERREIRA, Alex Aparecido, CHAN, Mei Yin, KOMATSU, Katsuyoshi, NAKAHARAI, Shu. Band engineering in bilayer graphene for future electron-devices. 第44回フラーレン・ナノチューブ・グラフェン総合シンポジウム. 2013
  10. NAKAHARAI, Shu, IIJIMA Tomohiko, OGAWA Shinichi, TSUKAGOSHI, Kazuhito, SATO Shintaro, YOKOYAMA Naoki. デュアルゲート構造とヘリウムイオン照射チャネルを有するグラフェントランジスタの極性可変動作. 「グリーン・ナノエレクトロニクスのコア技術開発」2013年 成果報告. 2013
  11. CHAN, Mei Yin, KOMATSU, Katsuyoshi, LI, Songlin, XU, Yong, DARMAWAN, Peter, KURAMOCHI, Hiromi, NAKAHARAI, Shu, FERREIRA, Alex Aparecido, WATANABE, Kenji, TANIGUCHI, Takashi, TSUKAGOSHI, Kazuhito. Approaching an inherent transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates. MANA International Symposium 2013. 2013
2012
  1. NAKAHARAI, Shu, Tomohiko Iijima, Shinich Ogawa, Shingo Suzuki, TSUKAGOSHI, Kazuhito, Shintaro Sato, Naoki Yokoyama. Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Reconfigurable CMOS Applications. IEEE International Electron Devices Meeting (IEDM). 2012
  2. FERREIRA, Alex Aparecido, MIYAZAKI, Hisao, LI, Songlin, KOMATSU, Katsuyoshi, NAKAHARAI, Shu, TSUKAGOSHI, Kazuhito. Enhanced current-rectification in bilayer graphene with an electrically tuned sloped band gap, . 2012 A3 Symposium of Emerging Materials: Nanomaterials for Energ. 2012

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