HOME > Profile > NABATAME, Toshihide
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
- Keywords
半導体CMOS、電子デバイス、ナノ薄膜形成技術、材料物性評価
PublicationsNIMS affiliated publications since 2004.
Research papers
- 生田目 俊秀. 電子デバイスへ向けた原子層堆積法で作製した金属酸化膜の研究. 表面技術. (2023) 137-140
- NABATAME, Toshihide. Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. (2019) 109-117 10.1149/09204.0109ecs
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
Books
Proceedings
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). (2019) 10.1109/edtm.2019.8731167
- Toshihide Nabatame. Trapping mechanism of charge trap capacitor with Al2O3/High-k/Al2O3 multilayer. ECS transactions. (2017) 131-138 10.1149/07901.0131ecst
- Thang Duy Dao, Satoshi Ishii, Kai Chen, Takahiro Yokoyama, Toshihide Nabatame, Tadaaki Nagao. Aluminum infrared plasmonic perfect absorbers for wavelength selective devices. SPIE Proceedings . (2016) 10.1117/12.2238514
Presentations
- NABATAME, Toshihide. Trapping mechanism of charge trap capacitor with Al2O3/High-k/Al2O3 multilayer. ULSI vs. TFT6. 2017
- NABATAME, Toshihide. Hetero interface of ionic/covalent oxides for Nano-electronics. ULSI vs. TFT 5. 2015
- 武田 大樹, 女屋 崇, 生田目 俊秀, 喜多 浩之. 界面形成手法によるSiO2/β-Ga2O3(001)バンドアライメントの違いの考察. 2023年 第70回応用物理学会春季学術講演会. 2023
Misc
- TSUYA, Daiju, WATANABE, Eiichiro, NABATAME, Toshihide. NIMSが提供するマスクレス露光プロセス技術. 金属. 87 [12] (2017) 1033-1038
- DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki. Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography. Proceedings of CLEO-PR 2015. (2015) 25E3_7-1-25E3_7-2
Patents
- No. 6292507 水素拡散障壁を備える半導体デバイス及びその製作方法 (2018)
- No. 6252903 薄膜トランジスタおよびその製造方法 (2017)
- No. 7162833 半導体装置の製造方法 (2022)
- No: 2012060055 ゲート電極及びその製造方法 (2012)
- No: 2015103677 薄膜トランジスタ及びその製造方法 (2015)
- No: 2015144173 薄膜トランジスタの構造、薄膜トランジスタの製造方法および半導体装置 (2015)