publication_type	publication_year	number	author	title	doi	reported_at
Proceeding	2023	1	Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi		https://doi.org/10.1149/11201.0109ecst	2024-04-25 08:16:45 +0900
Proceeding	2019	1	Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura	Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress	https://doi.org/10.1109/edtm.2019.8731167	2024-04-25 08:16:45 +0900
Proceeding	2017	1	Toshihide Nabatame	Trapping mechanism of charge trap capacitor with Al2O3/High-k/Al2O3 multilayer	https://doi.org/10.1149/07901.0131ecst	2024-04-25 08:16:45 +0900
Proceeding	2016	1	Thang Duy Dao, Satoshi Ishii, Kai Chen, Takahiro Yokoyama, Toshihide Nabatame, Tadaaki Nagao	Aluminum infrared plasmonic perfect absorbers for wavelength selective devices	https://doi.org/10.1117/12.2238514	2024-04-25 08:16:45 +0900
Proceeding	2015	1	DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki	Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography		2024-04-25 08:16:45 +0900
Proceeding	2015	2	T. Nabatame	Hetero interface of ionic/covalent oxides for Nano-electronics	https://doi.org/10.1149/06701.0173ecst	2024-04-25 08:16:45 +0900
Proceeding	2012	1	NABATAME, Toshihide, KIMURA, Masayuki, YAMADA, Hiroyuki, OHI, Akihiko, CHIKYOW, Toyohiro, Tomoji Ohishi	(TaC)1-xAlx電極からのAl拡散によるHfO2ゲートスタックにおけるVfbシフトのメカニズム		2024-04-25 08:16:45 +0900
Proceeding	2011	1	Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow	high-k/SiO2/Siスタック構造における酸素移動がVfbシフトへ及ぼす役割	https://doi.org/10.1149/1.3572296	2024-04-25 08:16:45 +0900
Proceeding	2010	1	Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow	Hf-酸化物ゲートスタックのＶｆｂシフトへ及ぼす酸素の役割	https://doi.org/10.1109/icsict.2010.5667509	2024-04-25 08:16:45 +0900
Proceeding	2010	2	Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow	Pt/high-k/SiO2/Si MOSキャパシタにおけるイオン性/共有結合性酸化物のヘテロ界面がVfbシフトへ果たす役割	https://doi.org/10.1149/1.3481592	2024-04-25 08:16:45 +0900
Proceeding	2009	1	Toriumi Akira, NABATAME, Toshihide	High-kゲートスタックにおける予期せぬVfbシフト -その起源は上部または下部界面のどちら？-		2024-04-25 08:16:45 +0900