publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at
Paper 2024 1 Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide ECS Journal of Solid State Science and Technology 13 4 045002 https://doi.org/10.1149/2162-8777/ad3959 2024-04-20 19:01:10 +0900
Paper 2024 2 Fumikazu Mizutani, Makoto Mizui, Nobutaka Takahashi, Mari Inoue, Toshihide Nabatame Journal of Vacuum Science & Technology A 42 2 https://doi.org/10.1116/6.0003178 2024-04-20 19:01:10 +0900
Paper 2023 1 Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Yang Sun, Jin Hu, Jiangwei Liu, Daiming Tang, Han Zhang, Zhaoshun Gao, Hongxuan Guo, Hideki Yoshikawa, Shigeo Tanuma Science and Technology of Advanced Materials: Methods 3 1 https://doi.org/10.1080/27660400.2023.2230870 2024-04-20 19:01:10 +0900
Paper 2023 2 生田目 俊秀 電子デバイスへ向けた原子層堆積法で作製した金属酸化膜の研究 表面技術 74 3 137 140 2024-04-20 19:01:10 +0900
Paper 2023 3 Takashi Onaya, Toshihide Nabatame, Takahiro Nagata, Kazuhito Tsukagoshi, Jiyoung Kim, Chang-Yong Nam, Esther H.R. Tsai, Koji Kita Solid-State Electronics 210 108801 https://doi.org/10.1016/j.sse.2023.108801 2024-04-20 19:01:10 +0900
Paper 2023 4 Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi ECS Transactions 112 1 109 117 https://doi.org/10.1149/11201.0109ecst 2024-04-20 19:01:10 +0900
Paper 2023 5 Jin-Hyun Kim, Takashi Onaya, Hye Ryeon Park, Yong Chan Jung, Dan N. Le, Minjong Lee, Heber Hernandez-Arriaga, Yugang Zhang, Esther H. R. Tsai, Chang-Yong Nam, Toshihide Nabatame, Si Joon Kim, Jiyoung Kim ACS Applied Electronic Materials 5 9 4726 4745 https://doi.org/10.1021/acsaelm.3c00733 2024-04-20 19:01:10 +0900
Paper 2023 6 Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide ECS Journal of Solid State Science and Technology 12 5 055007 https://doi.org/10.1149/2162-8777/acd1b4 2024-04-20 19:01:10 +0900
Paper 2022 1 Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide ECS Journal of Solid State Science and Technology 11 8 085010 https://doi.org/10.1149/2162-8777/ac8a70 2024-04-20 19:01:10 +0900
Paper 2022 2 Ibrahima Gueye, Riku Kobayashi, Shigenori Ueda, Toshihide Nabatame, Kazuhito Tsukagoshi, Atsushi Ogura, Takahiro Nagata "Operando hard X-ray photoelectron spectroscopy study of buried interface chemistry of Au/InO1.16C0.04/Al2O3/p+-Si stacks" Applied Surface Science 593 153272 https://doi.org/10.1016/j.apsusc.2022.153272 2024-04-20 19:01:10 +0900
Paper 2022 3 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) APL Materials 10 5 051110 https://doi.org/10.1063/5.0091661 2024-04-20 19:01:10 +0900
Paper 2021 1 Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition Journal of Vacuum Science & Technology A 39 6 062405 https://doi.org/10.1116/6.0001334 2024-04-20 19:01:10 +0900
Paper 2021 2 Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide Study of HfO2-based High-k gate Insulators for GaN Power Device ECS Transactions 113 120 https://doi.org/10.1149/10404.0113ecst 2024-04-20 19:01:10 +0900
Paper 2021 3 Tomomi Sawada, Toshihide Nabatame, Takashi Onaya, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures ECS Transactions 121 128 https://doi.org/10.1149/10404.0121ecst 2024-04-20 19:01:10 +0900
Paper 2021 4 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−xO2-Based Metal-Ferroelectric-Semiconductor ECS Transactions 129 135 https://doi.org/10.1149/10404.0129ecst 2024-04-20 19:01:10 +0900
Paper 2021 5 Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress Japanese Journal of Applied Physics 60 SC SCCM01 https://doi.org/10.35848/1347-4065/abe685 2024-04-20 19:01:10 +0900
Paper 2021 6 Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates Japanese Journal of Applied Physics 60 6 068003 https://doi.org/10.35848/1347-4065/ac0260 2024-04-20 19:01:10 +0900
Paper 2021 7 Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis APL Materials 9 3 031111 https://doi.org/10.1063/5.0035848 2024-04-20 19:01:10 +0900
Paper 2021 8 Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3 Japanese Journal of Applied Physics 60 3 030903 https://doi.org/10.35848/1347-4065/abde54 2024-04-20 19:01:10 +0900
Paper 2021 9 Jaemyung Kim, Okkyun Seo, L. S. R. Kumara, Toshihide Nabatame, Yasuo Koide, Osami Sakata Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography CrystEngComm 23 7 1628 1633 https://doi.org/10.1039/d0ce01572e 2024-04-20 19:01:10 +0900
Paper 2021 10 Liwen Sang, Bing Ren, Toshihide Nabatame, Masatomo Sumiya, Meiyong Liao Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate Journal of Alloys and Compounds 853 157356 https://doi.org/10.1016/j.jallcom.2020.157356 2024-04-20 19:01:10 +0900
Paper 2021 11 Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing Journal of Vacuum Science & Technology A 39 1 012401 https://doi.org/10.1116/6.0000626 2024-04-20 19:01:10 +0900
Paper 2020 1 上殿明良, Marcel Dickmann, Werner Egger, 生田目 俊秀, Christoph Hugenschmidt, 石橋章司 陽電子消滅を用いたAl2O3/GaN の空隙・空孔型欠陥の評価 Positron sciences 15 11 16 2024-04-20 19:01:10 +0900
Paper 2020 2 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition Applied Physics Letters 117 23 232902 https://doi.org/10.1063/5.0029709 2024-04-20 19:01:10 +0900
Paper 2020 3 Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer ECS Transactions 98 3 63 70 https://doi.org/10.1149/09803.0063ecst 2024-04-20 19:01:10 +0900
Paper 2020 4 Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor AIP Advances 10 6 065215 https://doi.org/10.1063/5.0012687 2024-04-20 19:01:10 +0900
Paper 2020 5 Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Hajime Kiyono Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor Journal of Vacuum Science & Technology A 38 3 032409 https://doi.org/10.1116/6.0000078 2024-04-20 19:01:10 +0900
Paper 2020 6 Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma Journal of Vacuum Science & Technology A 38 2 022412 https://doi.org/10.1116/1.5134738 2024-04-20 19:01:10 +0900
Paper 2020 7 Ha Hoang, Yuki Ueta, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates Thin Solid Films 698 137860 https://doi.org/10.1016/j.tsf.2020.137860 2024-04-20 19:01:10 +0900
Paper 2020 8 Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography RSC Advances 10 4 1878 1882 https://doi.org/10.1039/c9ra08882b 2024-04-20 19:01:10 +0900
Paper 2020 9 Hai Dang Ngo, Kai Chen, Ørjan S. Handegård, Anh Tung Doan, Thien Duc Ngo, Thang Duy Dao, Naoki Ikeda, Akihiko Ohi, Toshihide Nabatame, Tadaaki Nagao Nanoantenna Structure with Mid-Infrared Plasmonic Niobium-Doped Titanium Oxide Micromachines 11 1 23 https://doi.org/10.3390/mi11010023 2024-04-20 19:01:10 +0900
Paper 2019 1 Hai Dang Ngo, Thien Duc Ngo, Akemi Tamanai, Kai Chen, Nguyen Thanh Cuong, Orjan S. Handegard, Annemarie Pucci, Naoto Umezawa, Toshihide Nabatame, Tadaaki Nagao Structure and optical properties of sputter deposited pseudobrookite Fe2TiO5 thin films CrystEngComm 21 1 34 40 https://doi.org/10.1039/c8ce01475b 2024-04-20 19:01:10 +0900
Paper 2019 2 生田目 俊秀 Characteristics of Several High-k Gate Insulators for GaN Power Device ECS Transactions 109 117 https://doi.org/10.1149/09204.0109ecs 2024-04-20 19:01:10 +0900
Paper 2019 3 Sumio Sugisaki, Tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mutsumi Kimura Memristive characteristic of an amorphous Ga-Sn-O thin-film device Scientific Reports 9 1 https://doi.org/10.1038/s41598-019-39549-9 2024-04-20 19:01:10 +0900
Paper 2019 4 Liwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates Applied Physics Letters 115 17 172103 https://doi.org/10.1063/1.5124904 2024-04-20 19:01:10 +0900
Paper 2019 5 Thang Duy Dao, Satoshi Ishii, Anh Tung Doan, Yoshiki Wada, Akihiko Ohi, Toshihide Nabatame, Tadaaki Nagao On-Chip Quad-Wavelength Pyroelectric Sensor for Spectroscopic Infrared Sensing Advanced Science 6 20 1900579 https://doi.org/10.1002/advs.201900579 2024-04-20 19:01:10 +0900
Paper 2019 6 Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors Japanese Journal of Applied Physics 58 10 100915 https://doi.org/10.7567/1347-4065/ab476a 2024-04-20 19:01:10 +0900
Paper 2019 7 Ha Hoang, Kazutaka Sasaki, Tatsuki Hori, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara Silicon-doped indium oxide – a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method IOP Conference Series: Materials Science and Engineering 625 012002 https://doi.org/10.1088/1757-899x/625/1/012002 2024-04-20 19:01:10 +0900
Paper 2019 8 Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi Si-incorporated amorphous indium oxide thin-film transistors Japanese Journal of Applied Physics 58 9 090506 https://doi.org/10.7567/1347-4065/ab2b79 2024-04-20 19:01:10 +0900
Paper 2019 9 Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors Microelectronic Engineering 216 111040 https://doi.org/10.1016/j.mee.2019.111040 2024-04-20 19:01:10 +0900
Paper 2019 10 Erika Maeda, Toshihide Nabatame, Kazuya Yuge, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Koji Shiozaki, Hajime Kiyono Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing Microelectronic Engineering 216 111036 https://doi.org/10.1016/j.mee.2019.111036 2024-04-20 19:01:10 +0900
Paper 2019 11 Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique AIP Advances 9 8 085319 https://doi.org/10.1063/1.5098489 2024-04-20 19:01:10 +0900
Paper 2019 12 Thang Duy Dao, Chung Vu Hoang, Natsuki Nishio, Naoki Yamamoto, Akihiko Ohi, Toshihide Nabatame, Masakazu Aono, Tadaaki Nagao Dark-Field Scattering and Local SERS Mapping from Plasmonic Aluminum Bowtie Antenna Array Micromachines 10 7 468 https://doi.org/10.3390/mi10070468 2024-04-20 19:01:10 +0900
Paper 2019 13 Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer CrystEngComm 21 27 4036 4041 https://doi.org/10.1039/c9ce00463g 2024-04-20 19:01:10 +0900
Paper 2019 14 Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 ECS Transactions 92 3 3 13 https://doi.org/10.1149/09203.0003ecst 2024-04-20 19:01:10 +0900
Paper 2019 15 Toshihide Nabatame, Ippei Yamamoto, Tomomi Sawada, Akihiko Ohi, Thang Duy Dao, Tomoji Ohishi, Tadaaki Nagao Change of Electrical Properties of Rutile- and Anatase-TiO2 Films By Atomic Layer Deposited Al2O3 ECS Transactions 92 3 15 21 https://doi.org/10.1149/09203.0015ecst 2024-04-20 19:01:10 +0900
Paper 2019 16 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition Microelectronic Engineering 215 111013 https://doi.org/10.1016/j.mee.2019.111013 2024-04-20 19:01:10 +0900
Paper 2019 17 Thang Duy Dao, Anh Tung Doan, Satoshi Ishii, Takahiro Yokoyama, Handegård Sele Ørjan, Dang Hai Ngo, Tomoko Ohki, Akihiko Ohi, Yoshiki Wada, Chisato Niikura, Shinsuke Miyajima, Toshihide Nabatame, Tadaaki Nagao MEMS-Based Wavelength-Selective Bolometers Micromachines 10 6 416 https://doi.org/10.3390/mi10060416 2024-04-20 19:01:10 +0900
Paper 2019 18 Anh Tung Doan, Takahiro Yokoyama, Thang Duy Dao, Satoshi Ishii, Akihiko Ohi, Toshihide Nabatame, Yoshiki Wada, Shigenao Maruyama, Tadaaki Nagao A MEMS-based Quad-wavelength Hybrid Plasmonic–pyroelectric Infrared Detector Micromachines 10 6 413 https://doi.org/10.3390/mi10060413 2024-04-20 19:01:10 +0900
Paper 2019 19 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers APL Materials 7 6 061107 https://doi.org/10.1063/1.5096626 2024-04-20 19:01:10 +0900
Paper 2019 20 Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma AIP Advances 9 4 045019 https://doi.org/10.1063/1.5081727 2024-04-20 19:01:10 +0900
Paper 2019 21 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography CrystEngComm 21 14 2281 2285 https://doi.org/10.1039/c8ce01906a 2024-04-20 19:01:10 +0900
Paper 2019 22 Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide 71Ga NMR characterization of an n-doped free-standing gallium nitride wafer Japanese Journal of Applied Physics 58 3 031003 https://doi.org/10.7567/1347-4065/aafd1a 2024-04-20 19:01:10 +0900
Paper 2019 23 Ahmed A.M. El-Amir, Takeo Ohsawa, Toshihide Nabatame, Akihiko Ohi, Yoshiki Wada, Masaru Nakamura, Xiuwei Fu, Kiyoshi Shimamura, Naoki Ohashi Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing Materials Science in Semiconductor Processing 91 222 229 https://doi.org/10.1016/j.mssp.2018.11.033 2024-04-20 19:01:10 +0900
Paper 2019 24 Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing Semiconductor Science and Technology 34 3 034001 https://doi.org/10.1088/1361-6641/aafdbd 2024-04-20 19:01:10 +0900
Paper 2019 25 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata "Mapping of a Lattice-Plane Tilting in a
GaN
Wafer Using Energy-Resolved X-Ray Diffraction Topography" Physical Review Applied 11 2 https://doi.org/10.1103/physrevapplied.11.024072 2024-04-20 19:01:10 +0900
Paper 2019 26 Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors Applied Physics Express 12 1 011009 https://doi.org/10.7567/1882-0786/aaf62a 2024-04-20 19:01:10 +0900
Paper 2019 27 Ha Hoang, Tatsuki Hori, To-oru Yasuda, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara Si-doping effect on solution-processed In-O thin-film transistors Materials Research Express 6 2 026410 https://doi.org/10.1088/2053-1591/aaecf9 2024-04-20 19:01:10 +0900
Paper 2018 1 色川芳宏, 三石和貴, 生田目俊秀, 木本浩司, 小出康夫 Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy JAPANESE JOURNAL OF APPLIED PHYSICS 57 11 2024-04-20 19:01:10 +0900
Paper 2018 2 Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Characterization of a 4-inch GaN wafer by X-ray diffraction topography CrystEngComm 20 48 7761 7765 https://doi.org/10.1039/c8ce01440j 2024-04-20 19:01:10 +0900
Paper 2018 3 Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates Nanoscale Research Letters 13 1 https://doi.org/10.1186/s11671-018-2804-y 2024-04-20 19:01:10 +0900
Paper 2018 4 Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto, Yasuo Koide Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001) Japanese Journal of Applied Physics 57 9 098003 https://doi.org/10.7567/jjap.57.098003 2024-04-20 19:01:10 +0900
Paper 2018 5 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer Applied Physics Express 11 8 081002 https://doi.org/10.7567/apex.11.081002 2024-04-20 19:01:10 +0900
Paper 2018 6 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques ECS Transactions 86 6 31 38 https://doi.org/10.1149/08606.0031ecst 2024-04-20 19:01:10 +0900
Paper 2018 7 Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer AIP Advances 8 7 075318 https://doi.org/10.1063/1.5042098 2024-04-20 19:01:10 +0900
Paper 2018 8 Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory Thin Solid Films 655 48 53 https://doi.org/10.1016/j.tsf.2018.02.010 2024-04-20 19:01:10 +0900
Paper 2018 9 Yanfang Lou, Chulho Song, Yanna Chen, Loku Singgappulige Rosantha Kumara, Natalia Palina, Okkyun Seo, Satoshi Hiroi, Kentaro Kajiwara, Masato Hoshino, Kentaro Uesugi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates CrystEngComm 20 20 2861 2867 https://doi.org/10.1039/c8ce00229k 2024-04-20 19:01:10 +0900
Paper 2018 10 生田目 俊秀, 木村 将之, 弓削 雅津也, 井上万里, 池田 直樹, 大石友司, 大井 暁彦 原子層堆積法の酸化ガスがAl2O3膜の電気特性へ及ぼす影響 JOURNAL OF THE SURFACE SCIENCE SOCIETY OF JAPAN 61 5 280 285 2024-04-20 19:01:10 +0900
Paper 2018 11 Akira Uedono, Toshihide Nabatame, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Masatomo Sumiya, Shoji Ishibashi Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams Journal of Applied Physics 123 15 155302 https://doi.org/10.1063/1.5026831 2024-04-20 19:01:10 +0900
Paper 2018 12 Ramu Pasupathi Sugavaneshwar, Satoshi Ishii, Thang Duy Dao, Akihiko Ohi, Toshihide Nabatame, Tadaaki Nagao Fabrication of Highly Metallic TiN Films by Pulsed Laser Deposition Method for Plasmonic Applications ACS Photonics 5 3 814 819 https://doi.org/10.1021/acsphotonics.7b00942 2024-04-20 19:01:10 +0900
Paper 2018 13 生田目 俊秀 原子層堆積法を用いた酸化物薄膜スタックの電気特性制御と多値メモリー 応用物理 87 1 25 28 2024-04-20 19:01:10 +0900
Paper 2017 1 Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, Yasuo Koide Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001) Japanese Journal of Applied Physics 56 12 128004 https://doi.org/10.7567/jjap.56.128004 2024-04-20 19:01:10 +0900
Paper 2017 2 Tomomi Sawada, Toshihide Nabatame, Thang Duy Dao, Ippei Yamamoto, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama, Tomoji Ohishi, Atsushi Ogura, Tadaaki Nagao plasma-enhanced atomic layer deposition法によるRuO2下部電極の表面平滑性の改善及びRuO2/TiO2/Al2O3/TiO2/RuO2キャパシタの特性 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 6 061503 https://doi.org/10.1116/1.4998425 2024-04-20 19:01:10 +0900
Paper 2017 3 Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, Yasuo Koide Electron microscopy studies of the intermediate layers at the SiO2/GaN interface Japanese Journal of Applied Physics 56 11 110312 https://doi.org/10.7567/jjap.56.110312 2024-04-20 19:01:10 +0900
Paper 2017 4 Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes Applied Physics Letters 111 12 122102 https://doi.org/10.1063/1.4994627 2024-04-20 19:01:10 +0900
Paper 2017 5 Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura Improvement in ferroelectricity of HfxZr1-xO2 thin film using ZrO2 seed layer Applied Physics Express 10 8 081501 https://doi.org/10.7567/apex.10.081501 2024-04-20 19:01:10 +0900
Paper 2017 6 Kunji Shigeto, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame Radial Interference Contrast in in-situ SEM Observation of Metal Oxide Semiconductor Film Crystallization Microscopy and Microanalysis 23 S1 1512 1513 https://doi.org/10.1017/s1431927617008224 2024-04-20 19:01:10 +0900
Paper 2017 7 Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow Effect of Y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis Japanese Journal of Applied Physics 56 6S1 06GF11 https://doi.org/10.7567/jjap.56.06gf11 2024-04-20 19:01:10 +0900
Paper 2017 8 Hani Esmael Jan, Ha Hoang, Tsubasa Nakamura, Tomoaki Koga, Toshiaki Ina, Tomoya Uruga, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame, Akihiko Fujiwara Amorphous In-Si-O Films Fabricated via Solution Processing Journal of Electronic Materials 46 6 3610 3614 https://doi.org/10.1007/s11664-017-5506-9 2024-04-20 19:01:11 +0900
Paper 2017 9 Xu Gao, Meng-Fang Lin, Bao-Hua Mao, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Toshihide Nabatame, Zhi Liu, Kazuhito Tsukagoshi, Sui-Dong Wang Correlation between active layer thickness and ambient gas effect in IGZO thin-film transistors Journal of Physics D: Applied Physics 50 2 025102 https://doi.org/10.1088/1361-6463/50/2/025102 2024-04-20 19:01:11 +0900
Paper 2016 1 Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, Liwen Sang Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric Applied Physics Express 9 12 121002 https://doi.org/10.7567/apex.9.121002 2024-04-20 19:01:11 +0900
Paper 2016 2 Nobuhiko Mitoma, Bo Da, Hideki Yoshikawa, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takio Kizu, Akihiko Fujiwara, Kazuhito Tsukagoshi Phase transitions from semiconductive amorphous to conductive polycrystalline in Indium silicon oxide thin films Applied Physics Letters 109 22 221903 https://doi.org/10.1063/1.4968810 2024-04-20 19:01:11 +0900
Paper 2016 3 Tung S. Bui, Thang D. Dao, Luu H. Dang, Lam D. Vu, Akihiko Ohi, Toshihide Nabatame, YoungPak Lee, Tadaaki Nagao, Chung V. Hoang Metamaterial-enhanced vibrational absorption spectroscopy for the detection of protein molecules Scientific Reports 6 1 https://doi.org/10.1038/srep32123 2024-04-20 19:01:11 +0900
Paper 2016 4 Tomoji Ohishi, Yoshimi Yamazaki, Toshihide Nabatame Preparation, structure and gas barrier characteristics of poly silazane-derived silica thin film formed on PET by simultaneously applying ultraviolet-irradiation and heat-treatment Frontiers in Nanoscience and Nanotechnology 2 4 https://doi.org/10.15761/fnn.1000126 2024-04-20 19:01:11 +0900
Paper 2016 5 Liudmila Alekseeva, Toshihide Nabatame, Toyohiro Chikyow, Anatolii Petrov Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers Japanese Journal of Applied Physics 55 8S2 08PB02 https://doi.org/10.7567/jjap.55.08pb02 2024-04-20 19:01:11 +0900
Paper 2016 6 Takio Kizu, Shinya Aikawa, Toshihide Nabatame, Akihiko Fujiwara, Kazuhiro Ito, Makoto Takahashi, Kazuhito Tsukagoshi Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage Journal of Applied Physics 120 4 045702 https://doi.org/10.1063/1.4959822 2024-04-20 19:01:11 +0900
Paper 2016 7 Thang Duy Dao, Satoshi Ishii, Takahiro Yokoyama, Tomomi Sawada, Ramu Pasupathi Sugavaneshwar, Kai Chen, Yoshiki Wada, Toshihide Nabatame, Tadaaki Nagao Hole Array Perfect Absorbers for Spectrally Selective Mid-Wavelength Infrared Pyroelectric Detectors ACS Photonics 3 7 1271 1278 https://doi.org/10.1021/acsphotonics.6b00249 2024-04-20 19:01:11 +0900
Paper 2016 8 Yu Wang, Takio Kizu, Lei Song, Yujia Zhang, Sai Jiang, Jun Qian, Qijing Wang, Yi Shi, Youdou Zheng, Toshihide Nabatame, Kazuhito Tsukagoshi, Yun Li High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer Journal of Materials Chemistry C 4 34 7917 7923 https://doi.org/10.1039/c6tc01768a 2024-04-20 19:01:11 +0900
Paper 2016 9 Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow Thin-film growth of (110) rutile TiO2 on (100) Ge substrate by pulsed laser deposition Japanese Journal of Applied Physics 55 6S1 06GG06 https://doi.org/10.7567/jjap.55.06gg06 2024-04-20 19:01:11 +0900
Paper 2016 10 Kattareeya Taweesup, Ippei Yamamoto, Toyohiro Chikyow, Gobboon Lothongkum, Kazutoshi Tsukagoshi, Tomoji Ohishi, Sukkaneste Tungasmita, Patama Visuttipitukul, Kazuhiro Ito, Makoto Takahashi, Toshihide Nabatame Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide Thin Solid Films 598 126 130 https://doi.org/10.1016/j.tsf.2015.11.070 2024-04-20 19:01:11 +0900
Paper 2015 1 Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura Ga-In-Zn-O薄膜トランジスタにAl2O3層を形成した電気特性への影響 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 6 061506 https://doi.org/10.1116/1.4928763 2024-04-20 19:01:11 +0900
Paper 2015 2 Takio Kizu, Nobuhiko Mitoma, Miki Miyanaga, Hideaki Awata, Toshihide Nabatame, Kazuhito Tsukagoshi Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors Journal of Applied Physics 118 12 125702 https://doi.org/10.1063/1.4931422 2024-04-20 19:01:11 +0900
Paper 2015 3 Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition Thin Solid Films 591 105 110 https://doi.org/10.1016/j.tsf.2015.08.031 2024-04-20 19:01:11 +0900
Paper 2015 4 Thang Duy Dao, Kai Chen, Satoshi Ishii, Akihiko Ohi, Toshihide Nabatame, Masahiro Kitajima, Tadaaki Nagao Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al2O3–Al Trilayers ACS Photonics 2 7 964 970 https://doi.org/10.1021/acsphotonics.5b00195 2024-04-20 19:01:11 +0900
Paper 2015 5 Shimaa A. Abdellatef, Riho Tange, Takeshi Sato, Akihiko Ohi, Toshihide Nabatame, Akiyoshi Taniguchi Nanostructures control the hepatocellular responses to a cytotoxic agent “cisplatin” BioMed Research International 2015 1 10 https://doi.org/10.1155/2015/925319 2024-04-20 19:01:11 +0900
Paper 2015 6 Shinya Aikawa, Nobuhiko Mitoma, Takio Kizu, Toshihide Nabatame, Kazuhito Tsukagoshi Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors Applied Physics Letters 106 19 192103 https://doi.org/10.1063/1.4921054 2024-04-20 19:01:11 +0900
Paper 2015 7 Yongxun Liu, Toshihide Nabatame, Num Nguyen, Takashi Matsukawa, Kazuhiko Endo, Shinichi O’uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories Japanese Journal of Applied Physics 54 4S 04DD04 https://doi.org/10.7567/jjap.54.04dd04 2024-04-20 19:01:11 +0900
Paper 2015 8 Thang Duy Dao, Gui Han, Nono Arai, Toshihide Nabatame, Yoshiki Wada, Chung Vu Hoang, Masakazu Aono, Tadaaki Nagao Plasmon-mediated photocatalytic activity of wet-chemically prepared ZnO nanowire arrays Physical Chemistry Chemical Physics 17 11 7395 7403 https://doi.org/10.1039/c4cp05843g 2024-04-20 19:01:11 +0900
Paper 2015 9 Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng-Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants Applied Physics Letters 106 4 042106 https://doi.org/10.1063/1.4907285 2024-04-20 19:01:11 +0900
Paper 2015 10 Meng-Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing proces AIP Advances 5 1 017116 https://doi.org/10.1063/1.4905903 2024-04-20 19:01:11 +0900
Paper 2015 11 Toshihide Nabatame, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Toyohiro Chikyo Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer charge trap capacitors Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 1 01A118 https://doi.org/10.1116/1.4901231 2024-04-20 19:01:11 +0900
Paper 2014 1 Wei Ou-Yang, Nobuhiko Mitoma, Takio Kizu, Xu Gao, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors Applied Physics Letters 105 16 163503 https://doi.org/10.1063/1.4898815 2024-04-20 19:01:11 +0900
Paper 2014 2 I. A. Vladymyrskyi, M. V. Karpets, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, F. Ganss, G. Beddies, M. Albrecht, I. M. Makogon Influence of the substrate choice on the L10 phase formation of post-annealed Pt/Fe and Pt/Ag/Fe thin films Journal of Applied Physics 116 4 044310 https://doi.org/10.1063/1.4891477 2024-04-20 19:01:11 +0900
Paper 2014 3 Xu Gao, Shinya Aikawa, Nobuhiko Mitoma, Meng-Fang Lin, Takio Kizu, Toshihide Nabatame, Kazuhito Tsukagoshi Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors Applied Physics Letters 105 2 023503 https://doi.org/10.1063/1.4890312 2024-04-20 19:01:11 +0900
Paper 2014 4 Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials Journal of Low Power Electronics and Applications 4 2 153 167 https://doi.org/10.3390/jlpea4020153 2024-04-20 19:01:11 +0900
Paper 2014 5 Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyo, Masayuki Kimura, Hiroyuki Yamada, Tomoji Ohishi Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 3 03D121 https://doi.org/10.1116/1.4869059 2024-04-20 19:01:11 +0900
Paper 2014 6 Takio Kizu, Shinya Aikawa, Nobuhiko Mitoma, Maki Shimizu, Xu Gao, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability Applied Physics Letters 104 15 152103 https://doi.org/10.1063/1.4871511 2024-04-20 19:01:11 +0900
Paper 2014 7 Shimaa Abdellatef, Akihiko Ohi, Toshihide Nabatame, Akiyoshi Taniguchi The Effect of Physical and Chemical Cues on Hepatocellular Function and Morphology International Journal of Molecular Sciences 15 3 4299 4317 https://doi.org/10.3390/ijms15034299 2024-04-20 19:01:11 +0900
Paper 2014 8 Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Takio Kizu, Maki Shimizu, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies Applied Physics Letters 104 10 102103 https://doi.org/10.1063/1.4868303 2024-04-20 19:01:11 +0900
Paper 2014 9 Shimaa A. Abdellatef, Akihiko Ohi, Toshihide Nabatame, Akiyoshi Taniguchi Induction of hepatocyte functional protein expression by submicron/nano-patterning substrates to mimic in vivo structures Biomater. Sci. 2 3 330 338 https://doi.org/10.1039/c3bm60191a 2024-04-20 19:01:11 +0900
Paper 2013 1 I. A. Vladymyrskyi, M. V. Karpets, F. Ganss, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, G. Beddies, M. Albrecht, Iu. M. Makogon Influence of the annealing atmosphere on the structural properties of FePt thin films Journal of Applied Physics 114 16 164314 https://doi.org/10.1063/1.4827202 2024-04-20 19:01:11 +0900
Paper 2013 2 Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications Applied Physics Letters 103 17 172105 https://doi.org/10.1063/1.4822175 2024-04-20 19:01:11 +0900
Paper 2013 3 Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame, Toyohiro Chikyow Ta2O5キャップを用いたHfO2/Si界面のSiO2の薄膜化 Journal of Applied Physics 114 1 014106 https://doi.org/10.1063/1.4811691 2024-04-20 19:01:11 +0900
Paper 2013 4 Shinya Aikawa, Peter Darmawan, Keiichi Yanagisawa, Toshihide Nabatame, Yoshiyuki Abe, Kazuhito Tsukagoshi Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor Applied Physics Letters 102 10 102101 https://doi.org/10.1063/1.4794903 2024-04-20 19:01:11 +0900
Paper 2012 1 Toshihide Nabatame, Masayuki Kimura, Hiroyuki Yamada, Akihiko Ohi, Tomoji Ohishi, Toyohiro Chikyow Hfからなるhigh-k誘電体で酸素移動がフラットバンド電圧シフトへ及ぼす影響 Thin Solid Films 520 8 3387 3391 https://doi.org/10.1016/j.tsf.2011.10.086 2024-04-20 19:01:11 +0900
Paper 2011 1 Pattira Homhuan, Toshihide Nabatame, Toyohiro Chikyow, Sukkaneste Tungasmita Effect of Y Content in (TaC)1-xYx Gate Electrodes on Flatband Voltage Control for Hf-Based High-k Gate Stacks Japanese Journal of Applied Physics 50 10 10PA03 https://doi.org/10.1143/jjap.50.10pa03 2024-04-20 19:01:11 +0900