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研究論文 TSV

2020
  1. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide. Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors. IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685 10.1109/ted.2020.2972979
  2. Haihua Wu, Zilong Zhang, Liwen Sang, Tiefu Li, Jianqiang You, Masataka Imura, Yasuo Koide, Meiyong Liao. Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS. Corrosion Science. 170 (2020) 108651 10.1016/j.corsci.2020.108651
  3. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang. Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor. Journal of Alloys and Compounds. 829 (2020) 154542 10.1016/j.jallcom.2020.154542
  4. Zilong Zhang, Haihua Wu, Liwen Sang, Yukiko Takahashi, Jian Huang, Linjun Wang, Masaya Toda, Indianto Mohammad Akita, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing. ACS Applied Materials & Interfaces. 12 [20] (2020) 23155-23164 10.1021/acsami.0c06593
  5. Zilong Zhang, Yuanzhao Wu, Liwen Sang, Haihua Wu, Jian Huang, Linjun Wang, Yukiko Takahashi, Runwei Li, Satoshi Koizumi, Masaya Toda, Indianto Mohammad Akita, Yasuo Koide, Meiyong Liao. Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures. Materials Research Letters. 8 [5] (2020) 180-186 10.1080/21663831.2020.1734680
  6. Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide. Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond. AIP Advances. 10 [5] (2020) 055114 10.1063/5.0008167
  7. Haihua Wu, Zilong Zhang, Liwen Sang, Tiefu Li, Jianqiang You, Yingjie Lu, Yasuo Koide, Meiyong Liao. Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators. Diamond and Related Materials. 103 (2020) 107711 10.1016/j.diamond.2020.107711
  8. Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography. RSC Advances. 10 [4] (2020) 1878-1882 10.1039/c9ra08882b
2019
  1. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang. Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates. Applied Sciences. 9 [14] (2019) 2895 10.3390/app9142895
  2. Bing Ren, Jijun Zhang, Meiyong Liao, Jian Huang, Liwen Sang, Yasuo Koide, Linjun Wang. High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal. Optics Express. 27 [6] (2019) 8935 10.1364/oe.27.008935
  3. Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. High Current Output Hydrogenated Diamond Triple-Gate MOSFETs. IEEE Journal of the Electron Devices Society. 7 (2019) 561-565 10.1109/jeds.2019.2915250
  4. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors. IEEE Electron Device Letters. 40 [11] (2019) 1748-1751 10.1109/led.2019.2942967
  5. Mingchao Yang, Liwen Sang, Meiyong Liao, Masataka Imura, Hongdong Li, Yasuo Koide. Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas. physica status solidi (a). 216 [24] (2019) 1900538 10.1002/pssa.201900538
  6. Zilong Zhang, Haihua Wu, Liwen Sang, Jian Huang, Yukiko Takahashi, Linjun Wang, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor. Carbon. 152 (2019) 788-795 10.1016/j.carbon.2019.06.072
  7. Liwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide. Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates. Applied Physics Letters. 115 [17] (2019) 172103 10.1063/1.5124904
  8. Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide. Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors. Japanese Journal of Applied Physics. 58 [10] (2019) 100915 10.7567/1347-4065/ab476a
  9. Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489
  10. Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono. Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. Microelectronic Engineering. 216 (2019) 111040 10.1016/j.mee.2019.111040
  11. J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C. Journal of Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
  12. Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata. Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer. CrystEngComm. 21 [27] (2019) 4036-4041 10.1039/c9ce00463g
  13. Meiyong Liao, Liwen Sang, Takehiro Shimaoka, Masataka Imura, Satoshi Koizumi, Yasuo Koide. Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases. Advanced Electronic Materials. 5 [5] (2019) 1800832 10.1002/aelm.201800832
  14. Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography. CrystEngComm. 21 [14] (2019) 2281-2285 10.1039/c8ce01906a
  15. Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide. 71Ga NMR characterization of an n-doped free-standing gallium nitride wafer. Japanese Journal of Applied Physics. 58 [3] (2019) 031003 10.7567/1347-4065/aafd1a
  16. Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi. Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing. Semiconductor Science and Technology. 34 [3] (2019) 034001 10.1088/1361-6641/aafdbd
  17. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang. High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states. Journal of Physics D: Applied Physics. 52 [8] (2019) 085105 10.1088/1361-6463/aaf5ba
  18. Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography. Physical Review Applied. 11 [2] (2019) 10.1103/physrevapplied.11.024072
  19. Meiyong Liao, Liwen Sang, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide. Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation. Advanced Materials Technologies. 4 [2] (2019) 1800325 10.1002/admt.201800325
2018
  1. IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
  2. Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Characterization of a 4-inch GaN wafer by X-ray diffraction topography. CrystEngComm. 20 [48] (2018) 7761-7765 10.1039/c8ce01440j
  3. Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide. Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates. Nanoscale Research Letters. 13 [1] (2018) 10.1186/s11671-018-2804-y
  4. Masataka Imura, Yuichi Ota, Ryan G. Banal, Meiyong Liao, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide. Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy. physica status solidi (a). 215 [21] (2018) 1800282 10.1002/pssa.201800282
  5. Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang. Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments. Journal of Alloys and Compounds. 767 (2018) 600-605 10.1016/j.jallcom.2018.07.150
  6. Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto, Yasuo Koide. Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001). Japanese Journal of Applied Physics. 57 [9] (2018) 098003 10.7567/jjap.57.098003
  7. Haihua Wu, Liwen Sang, Yumeng Li, Tokuyuki Teraji, Tiefu Li, Masataka Imura, Jianqiang You, Yasuo Koide, Masaya Toda, Meiyong Liao. Reducing intrinsic energy dissipation in diamond-on-diamond mechanical resonators toward one million quality factor. Physical Review Materials. 2 [9] (2018) 10.1103/physrevmaterials.2.090601
  8. Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer. Applied Physics Express. 11 [8] (2018) 081002 10.7567/apex.11.081002
  9. Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer. AIP Advances. 8 [7] (2018) 075318 10.1063/1.5042098
  10. LIU, Jiangwei. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
  11. Yanfang Lou, Chulho Song, Yanna Chen, Loku Singgappulige Rosantha Kumara, Natalia Palina, Okkyun Seo, Satoshi Hiroi, Kentaro Kajiwara, Masato Hoshino, Kentaro Uesugi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates. CrystEngComm. 20 [20] (2018) 2861-2867 10.1039/c8ce00229k
  12. Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide. A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface. Journal of Applied Physics. 123 [16] (2018) 161599 10.1063/1.5002176
  13. Liwen Sang, Bing Ren, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors. Journal of Applied Physics. 123 [16] (2018) 161423 10.1063/1.5010952
  14. J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide. Annealing effects on hydrogenated diamond NOR logic circuits. Applied Physics Letters. 112 [15] (2018) 153501 10.1063/1.5022590
  15. 井村 将隆, バナル ライアン, 廖 梅勇, 松元 隆夫, 熊本 明仁, 柴田 直哉, 幾原 雄一, 小出 康夫. 窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価. 日本結晶成長学会誌. 45 [1] (2018) 05-1-05-11 10.19009/jjacg.3-45-1-05
  16. Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 123 [9] (2018) 095701 10.1063/1.5016574
  17. 廖 梅勇, 井村 将隆, サン リウエン, 寺地 徳之, 小泉 聡, 小出 康夫. 単結晶ダイヤモンドMEMSデバイスの研究. NEW DIAMOND. 34 [1] (2018) 12-16
2017
  1. Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Kazuya Terabe. Magnetic Control of Magneto-Electrochemical Cell and Electric Double Layer Transistor. Scientific Reports. 7 [1] (2017) 10.1038/s41598-017-11114-2
  2. Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, Yasuo Koide. Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001). Japanese Journal of Applied Physics. 56 [12] (2017) 128004 10.7567/jjap.56.128004
  3. Haihua Wu, Liwen Sang, Tokuyuki Teraji, Tiefu Li, Kongping Wu, Masataka Imura, Jianqiang You, Yasuo Koide, Meiyong Liao. Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient. Carbon. 124 (2017) 281-287 10.1016/j.carbon.2017.08.069
  4. Toshichika Aoki, Tokuyuki Teraji, Yasuo Koide, Kenji Shiojima. Displacement current of Au/p-diamond Schottky contacts. Materials Science in Semiconductor Processing. 70 (2017) 207-212 10.1016/j.mssp.2016.12.012
  5. Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide. Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate. physica status solidi (a). 214 [11] (2017) 1700463 10.1002/pssa.201700463
  6. T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide. Homoepitaxial diamond chemical vapor deposition for ultra-light doping. Materials Science in Semiconductor Processing. 70 (2017) 197-202 10.1016/j.mssp.2016.11.012
  7. Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, Yasuo Koide. Electron microscopy studies of the intermediate layers at the SiO2/GaN interface. Japanese Journal of Applied Physics. 56 [11] (2017) 110312 10.7567/jjap.56.110312
  8. T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, Y. Koide. Mechanism of reverse current increase of vertical-type diamond Schottky diodes. Journal of Applied Physics. 122 [13] (2017) 135304 10.1063/1.4994570
  9. 寺地 徳之, 小出 康夫. パワーデバイス用ダイヤモンド結晶. 電気学会誌. 137 [10] (2017) 689-692 10.1541/ieejjournal.137.689
  10. Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes. Applied Physics Letters. 111 [12] (2017) 122102 10.1063/1.4994627
  11. Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  12. J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide. Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters. Journal of Applied Physics. 121 [22] (2017) 224502 10.1063/1.4985066
  13. J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Applied Physics Letters. 110 [20] (2017) 203502 10.1063/1.4983091
  14. Bing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance. Applied Physics Express. 10 [5] (2017) 051001 10.7567/apex.10.051001
  15. Jiangwei Liu, Yasuo Koide. Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors. BIOSENSORS AND BIODETECTION. 1572 (2017) 217-232 10.1007/978-1-4939-6911-1_15
  16. Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 121 [9] (2017) 095703 10.1063/1.4977201
  17. Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide. Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE. physica status solidi (a). 214 [2] (2017) 1600727 10.1002/pssa.201600727
  18. Meiyong Liao, Masaya Toda, Liwen Sang, Tokuyuki Teraji, Masataka Imura, Yasuo Koide. Improvement of the quality factor of single crystal diamond mechanical resonators. Japanese Journal of Applied Physics. 56 [2] (2017) 024101 10.7567/jjap.56.024101
  19. Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel. Journal of Applied Physics. 121 [2] (2017) 025702 10.1063/1.4972979
  20. Ryan G. Banal, Masataka Imura, Yasuo Koide. Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate. Study of Grain Boundary Character. (2017) 43-58 10.5772/66177
2016
  1. Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide. Design and fabrication of high-performance diamond triple-gate field-effect transistors. Scientific Reports. 6 [1] (2016) 10.1038/srep34757
  2. Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, Liwen Sang. Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric. Applied Physics Express. 9 [12] (2016) 121002 10.7567/apex.9.121002
  3. Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang. Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy. Journal of Applied Physics. 120 [18] (2016) 185305 10.1063/1.4967394
  4. Elisseos Verveniotis, Yuji Okawa, Marina V. Makarova, Yasuo Koide, Jiangwei Liu, Břetislav Šmíd, Kenji Watanabe, Takashi Taniguchi, Katsuyoshi Komatsu, Takeo Minari, Xuying Liu, Christian Joachim, Masakazu Aono. Self-assembling diacetylene molecules on atomically flat insulators. Physical Chemistry Chemical Physics. 18 [46] (2016) 31600-31605 10.1039/c6cp06749b
  5. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors. Journal of Applied Physics. 120 [12] (2016) 124504 10.1063/1.4962851
  6. Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors. Journal of Applied Physics. 120 [11] (2016) 115307 10.1063/1.4962854
  7. Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas. Scientific Reports. 6 [1] (2016) 10.1038/srep23683
  8. Tao Ji, Qian Liu, Rujia Zou, Yangang Sun, Kaibing Xu, Liwen Sang, Meiyong Liao, Yasuo Koide, Li Yu, Junqing Hu. An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction. Advanced Functional Materials. 26 [9] (2016) 1400-1410 10.1002/adfm.201504464
  9. Daisuke INOUE, Atsushi MIURA, Tsuyoshi NOMURA, Hisayoshi FUJIKAWA, Kazuo SATO, Naoki IKEDA, Daiju TSUYA, Yoshimasa SUGIMOTO, Yasuo KOIDE. Optical Filters Based on Nano-Sized Hole and Slit Patterns in Aluminum Films. IEICE Transactions on Electronics. E99.C [3] (2016) 358-364 10.1587/transele.e99.c.358
  10. Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond. Applied Physics Letters. 108 [1] (2016) 012105 10.1063/1.4939650
2015
  1. Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya, Shinobu Onoda, Takeshi Ohshima, Lachlan J. Rogers, Fedor Jelezko, Philipp Neumann, Jörg Wrachtrup, Satoshi Koizumi. Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation. physica status solidi (a). 212 [11] (2015) 2365-2384 10.1002/pssa.201532449
  2. J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, Y. Koide. Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors. Journal of Applied Physics. 118 [11] (2015) 115704 10.1063/1.4930294
  3. Ryan G. Banal, Masataka Imura, Yasuo Koide. Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer. AIP Advances. 5 [9] (2015) 097143 10.1063/1.4931159
  4. Jiangwei Liu, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric. Scientific Reports. 4 [1] (2015) 10.1038/srep06395
  5. Jiangwei Liu, Meiyong Liao, Masataka Imura, Hirotaka Oosato, Eiichiro Watanabe, Yasuo Koide. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond. Diamond and Related Materials. 54 (2015) 55-58 10.1016/j.diamond.2014.10.004
  6. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties. Journal of Applied Physics. 117 [10] (2015) 105706 10.1063/1.4914908
  7. Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures. Applied Physics Letters. 106 [8] (2015) 083506 10.1063/1.4913597
2014
  1. Meiyong Liao, Masaya Toda, Liwen Sang, Shunichi Hishita, Shuji Tanaka, Yasuo Koide. Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators. Applied Physics Letters. 105 [25] (2014) 251904 10.1063/1.4904990
  2. Alexandre Fiori, Tokuyuki Teraji, Yasuo Koide. Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface. physica status solidi (a). 211 [10] (2014) 2363-2366 10.1002/pssa.201431216
  3. A. Fiori, T. Teraji, Y. Koide. Diamond Schottky diodes with ideality factors close to 1. Applied Physics Letters. 105 [13] (2014) 133515 10.1063/1.4897315
  4. J Alvarez, M Boutchich, J P Kleider, T Teraji, Y Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics. 47 [35] (2014) 355102 10.1088/0022-3727/47/35/355102
  5. J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor. Applied Physics Letters. 105 [8] (2014) 082110 10.1063/1.4894291
  6. LIAO, Meiyong, KOIDE, Yasuo, SANG, Liwen. Nanostructured Wide-bandgap Semiconductors for Ultraviolet Detection. Austin Journal of Nanomedicine & Nanotechnology. 2 [5] (2014) 1029-1-1029-2
  7. J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide. Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material. Journal of Physics D: Applied Physics. 47 [24] (2014) 245102 10.1088/0022-3727/47/24/245102
  8. Satoshi Yamasaki, Etienne Gheeraert, Yasuo Koide. Doping and interface of homoepitaxial diamond for electronic applications. MRS Bulletin. 39 [06] (2014) 499-503 10.1557/mrs.2014.100
  9. Tokuyuki Teraji, Yasuo Koide, Toshimichi Ito. Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces. Thin Solid Films. 557 (2014) 241-248 10.1016/j.tsf.2013.11.132
  10. Liwen Sang, Meiyong Liao, Qifeng Liang, Masaki Takeguchi, Benjamin Dierre, Bo Shen, Takashi Sekiguchi, Yasuo Koide, Masatomo Sumiya. A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure. Advanced Materials. 26 [9] (2014) 1414-1420 10.1002/adma.201304335
  11. Wei Tian, Chao Zhang, Tianyou Zhai, Song-Lin Li, Xi Wang, Jiangwei Liu, Xiao Jie, Dequan Liu, Meiyong Liao, Yasuo Koide, Dmitri Golberg, Yoshio Bando. Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms. ADVANCED MATERIALS. 26 [19] (2014) 3088-3093 10.1002/adma.201305457
  12. Jan Čermák, Yasuo Koide, Daisuke Takeuchi, Bohuslav Rezek. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond. Journal of Applied Physics. 115 [5] (2014) 053105 10.1063/1.4864420
2013
  1. 小出 康夫, 廖 梅勇, 井村 将隆. ダイヤモンドを用いた光·電子デバイスの開発. Journal of Smart Processing. 2 [5] (2013) 224-229 10.7791/jspmee.2.224
  2. Rujia Zou, Zhenyu Zhang, Junqing Hu, Liwen Sang, Yauso Koide, Meiyong Liao. High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts. Nanotechnology. 24 [49] (2013) 495701 10.1088/0957-4484/24/49/495701
  3. Liwen Sang, Junqing Hu, Rujia Zou, Yasuo Koide, Meiyong Liao. Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures. Scientific Reports. 3 [1] (2013) 10.1038/srep02368
  4. M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi. Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy. Applied Physics Letters. 103 [16] (2013) 162110 10.1063/1.4826094
  5. Jiangwei Liu, Shaoheng Cheng, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide. Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy. Diamond and Related Materials. 38 (2013) 24-27 10.1016/j.diamond.2013.06.005
  6. J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide. Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors. Journal of Applied Physics. 114 [8] (2013) 084108 10.1063/1.4819108
  7. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. Normally-off HfO2-gated diamond field effect transistors. Applied Physics Letters. 103 [9] (2013) 092905 10.1063/1.4820143
  8. Masataka Imura, Ujjal Gautam, Kiyomi Nakajima, Yasuo Koide, Hiroshi Amano, Kenji Tsuda. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <112̄0 > and <11̄00 > Zone-Axes of AlN for Polarity Determination. Japanese Journal of Applied Physics. 52 [8S] (2013) 08JE15 10.7567/jjap.52.08je15
  9. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p&#8211;i&#8211;n Homojunction Solar Cells. JAPANESE JOURNAL OF APPLIED PHYSICS. 52 [8] (2013) 08JF04-1-08JF04-4
  10. Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Hiroyuki Takeda, Meiyong Liao, AnLi Yang, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasuo Koide, Keisuke Kobayashi, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Tsutomu Araki, Yasushi Nanishi. Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 114 [3] (2013) 033505 10.1063/1.4812570
  11. Tokuyuki Teraji, Takashi Taniguchi, Satoshi Koizumi, Yasuo Koide, Junichi Isoya. Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment. Applied Physics Express. 6 [5] (2013) 055601 10.7567/apex.6.055601
  12. J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, Y. Koide. Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction. Journal of Applied Physics. 113 [12] (2013) 123706 10.1063/1.4798366
  13. J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide. Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric. Applied Physics Letters. 102 [11] (2013) 112910 10.1063/1.4798289
2012
  1. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond. Applied Physics Letters. 101 [25] (2012) 252108 10.1063/1.4772985
  2. Shaoheng Cheng, Liwen Sang, Meiyong Liao, Jiangwei Liu, Masataka Imura, Hongdong Li, Yasuo Koide. Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices. Applied Physics Letters. 101 [23] (2012) 232907 10.1063/1.4770059
  3. Daisuke Inoue, Tsuyoshi Nomura, Atsushi Miura, Hisayoshi Fujikawa, Kazuo Sato, Naoki Ikeda, Daiju Tsuya, Yoshimasa Sugimoto, Yasuo Koide. Polarization Filters for Visible Light Consisting of Subwavelength Slits in an Aluminum Film. Journal of Lightwave Technology. 30 [22] (2012) 3463-3467 10.1109/jlt.2012.2220756
  4. Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, Meiyong Liao, Imura Masataka, Yasuo Koide, Jean-Paul Kleider. Amorphous silicon diamond based heterojunctions with high rectification ratio. Journal of Non-Crystalline Solids. 358 [17] (2012) 2110-2113 10.1016/j.jnoncrysol.2011.12.067
  5. Meiyong Liao, Liwen Sang, Tokuyuku Teraji, Masataka Imura, Jose Alvarez, Yasuo Koide. Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors. Japanese Journal of Applied Physics. 51 [9R] (2012) 090115 10.1143/jjap.51.090115
  6. Tokuyuki Teraji, Takashi Taniguchi, Satoshi Koizumi, Kenji Watanabe, Meiyong Liao, Yasuo Koide, Junichi Isoya. Chemical Vapor Deposition of $^{12}$C Isotopically Enriched Polycrystalline Diamond. Japanese Journal of Applied Physics. 51 (2012) 090104 10.1143/jjap.51.090104
  7. T. Teraji, M. Y. Liao, Y. Koide. Localized mid-gap-states limited reverse current of diamond Schottky diodes. Journal of Applied Physics. 111 [10] (2012) 104503 10.1063/1.4712437
  8. Meiyong Liao, Zouwen Rong, Shunichi Hishita, Masataka Imura, Satoshi Koizumi, Yasuo Koide. Nanoelectromechanical switch fabricated from single crystal diamond: Experiments and modeling. Diamond and Related Materials. 24 (2012) 69-73 10.1016/j.diamond.2011.10.026
  9. Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano. Development of AlN/diamond heterojunction field effect transistors. Diamond and Related Materials. 24 (2012) 206-209 10.1016/j.diamond.2012.01.020
  10. Eiichiro Watanabe, Arolyn Conwill, Daiju Tsuya, Yasuo Koide. Low contact resistance metals for graphene based devices. Diamond and Related Materials. 24 (2012) 171-174 10.1016/j.diamond.2012.01.019
  11. 井村 将隆, 廖 梅勇, 小出 康夫. 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ. NEW DIAMOND. 28 [2] (2012) 36-38
  12. L. W. Sang, M. Y. Liao, Y. Koide, M. Sumiya. InGaN photodiodes using CaF2 insulator for high-temperature UV detection. physica status solidi (c). 9 [3-4] (2012) 953-956 10.1002/pssc.201100374
  13. Naoki IKEDA, Yoshimasa SUGIMOTO, Masayuki OCHIAI, Daijyu TSUYA, Yasuo KOIDE, Daisuke INOUE, Atsushi MIURA, Tsuyoshi NOMURA, Hisayoshi FUJIKAWA, Kazuo SATO. Color Filter Based on Surface Plasmon Resonance Utilizing Sub-Micron Periodic Hole Array in Aluminum Thin Film. IEICE Transactions on Electronics. E95-C [2] (2012) 251-254 10.1587/transele.e95.c.251
  14. So Nagashima, Terumitsu Hasebe, Daiju Tsuya, Taku Horikoshi, Masayuki Ochiai, Shuntaro Tanigawa, Yasuo Koide, Atsushi Hotta, Tetsuya Suzuki. Controlled formation of wrinkled diamond-like carbon (DLC) film on grooved poly(dimethylsiloxane) substrate. Diamond and Related Materials. 22 (2012) 48-51 10.1016/j.diamond.2011.12.013
  15. Kiyoshi ASAKAWA, Yoshimasa SUGIMOTO, Naoki IKEDA, Daiju TSUYA, Yasuo KOIDE, Yoshinori WATANABE, Nobuhiko OZAKI, Shunsuke OHKOUCHI, Tsuyoshi NOMURA, Daisuke INOUE, Takayuki MATSUI, Atsushi MIURA, Hisayoshi FUJIKAWA, Kazuo SATO. Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics. IEICE Transactions on Electronics. E95-C [2] (2012) 178-187 10.1587/transele.e95.c.178
  16. 廖 梅勇, 菱田 俊一, 小泉 聡, 小出 康夫. 単結晶ダイヤモンドNEMSスイッチ. NEW DIAMOND. 104 [1] (2012) 28-29
2011
  1. Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya. Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer. Applied Physics Letters. 99 [16] (2011) 161109 10.1063/1.3654155
  2. Shinya Ohmagari, Tokuyuki Teraji, Yasuo Koide. Non-destructive detection of killer defects of diamond Schottky barrier diodes. Journal of Applied Physics. 110 [5] (2011) 056105 10.1063/1.3626791
  3. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. High-temperature ultraviolet detection based on InGaN Schottky photodiodes. Applied Physics Letters. 99 [3] (2011) 031115 10.1063/1.3615291
  4. L Li, Y X Zhang, X S Fang, T Y Zhai, M Y Liao, H Q Wang, G H Li, Y Koide, Y Bando, D Golberg. Sb2O3nanobelt networks for excellent visible-light-range photodetectors. Nanotechnology. 22 [16] (2011) 165704 10.1088/0957-4484/22/16/165704
  5. Meiyong Liao, Yasuo Koide. Carbon-Based Materials: Growth, Properties, MEMS/NEMS Technologies, and MEM/NEM Switches. Critical Reviews in Solid State and Materials Sciences. 36 [2] (2011) 66-101 10.1080/10408436.2011.572748
  6. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator. Applied Physics Letters. 98 [10] (2011) 103502 10.1063/1.3562326
  7. Liang Li, Yong Zhang, Xiaosheng Fang, Tianyou Zhai, Meiyong Liao, Xueliang Sun, Yasuo Koide, Yoshio Bando, Dmitri Golberg. WO3 nanowires on carbon papers: electronic transport, improved ultraviolet-light photodetectors and excellent field emitters. Journal of Materials Chemistry. 21 [18] (2011) 6525 10.1039/c0jm04557h
  8. Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide, Hiroshi Amano. Demonstration of diamond field effect transistors by AlN/diamond heterostructure. physica status solidi (RRL) - Rapid Research Letters. 5 [3] (2011) 125-127 10.1002/pssr.201105024
  9. Daisuke Inoue, Atsushi Miura, Tsuyoshi Nomura, Hisayoshi Fujikawa, Kazuo Sato, Naoki Ikeda, Daiju Tsuya, Yoshimasa Sugimoto, Yasuo Koide. Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes. Applied Physics Letters. 98 [9] (2011) 093113 10.1063/1.3560467
  10. Liang Li, Erwin Auer, Meiyong Liao, Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Alois Lugstein, Yasuo Koide, Yoshio Bando, Dmitri Golberg. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts. Nanoscale. 3 [3] (2011) 1120 10.1039/c0nr00702a
2010
  1. Meiyong Liao, Shunichi Hishita, Eiichiro Watanabe, Satoshi Koizumi, Yasuo Koide. Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches. Advanced Materials. 22 [47] (2010) 5393-5397 10.1002/adma.201003074
  2. Liang Li, Pooi See Lee, Chaoyi Yan, Tianyou Zhai, Xiaosheng Fang, Meiyong Liao, Yasuo Koide, Yoshio Bando, Dmitri Golberg. Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts. Advanced Materials. 22 [45] (2010) 5145-5149 10.1002/adma.201002608
  3. Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, Yasuo Koide, François Jomard, Dominique Planson, Pierre Brosselard, Nicolas Dheilly, Bertrand Vergne, Sigo Scharnholz. Extreme dielectric strength in boron doped homoepitaxial diamond. Applied Physics Letters. 97 [22] (2010) 223501 10.1063/1.3520140
  4. Yanbo Li, Takero Tokizono, Meiyong Liao, Miao Zhong, Yasuo Koide, Ichiro Yamada, Jean-Jacques Delaunay. Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection. Advanced Functional Materials. 20 [22] (2010) 3972-3978 10.1002/adfm.201001140
  5. Tianyou Zhai, Mingfu Ye, Liang Li, Xiaosheng Fang, Meiyong Liao, Yongfang Li, Yasuo Koide, Yoshio Bando, Dmitri Golberg. Single-Crystalline Sb2Se3 Nanowires for High-Performance Field Emitters and Photodetectors. Advanced Materials. 22 [40] (2010) 4530-4533 10.1002/adma.201002097
  6. Chun Li, Yoshio Bando, Meiyong Liao, Yasuo Koide, Dmitri Golberg. Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire. Applied Physics Letters. 97 [16] (2010) 161102 10.1063/1.3491212
  7. Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy. physica status solidi (c). 7 [10] (2010) 2365-2367 10.1002/pssc.200983900
  8. Liang Li, Xiaosheng Fang, Tianyou Zhai, Meiyong Liao, Ujjal K Gautam, Xingcai Wu, Yasuo Koide, Yoshio Bando, Dmitri Golberg. Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts. Advanced Materials. 22 [37] (2010) 4151-4156 10.1002/adma.201001413
  9. Liang Li, Peicai Wu, Xiaosheng Fang, Tianyou Zhai, Lun Dai, Meiyong Liao, Yasuo Koide, Hongqiang Wang, Yoshio Bando, Dmitri Golberg. Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors. Advanced Materials. 22 [29] (2010) 3161-3165 10.1002/adma.201000144
  10. Meiyong Liao, Chun Li, Shunichi Hishita, Yasuo Koide. Batch production of single-crystal diamond bridges and cantilevers for microelectromechanical systems. Journal of Micromechanics and Microengineering. 20 [8] (2010) 085002 10.1088/0960-1317/20/8/085002
  11. Tianyou Zhai, Ying Ma, Liang Li, Xiaosheng Fang, Meiyong Liao, Yasuo Koide, Jiannian Yao, Yoshio Bando, Dmitri Golberg. Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping. Journal of Materials Chemistry. 20 [32] (2010) 6630 10.1039/c0jm01013h
  12. LIAO, Meiyong, KOIDE, Yasuo. Current Progress of Pressure Sensors for Harsh Environments Based on Wide-Bandgap Semiconductors. Recent Patents on Materials Science . 3 [2] (2010) 96-105
  13. Tianyou Zhai, Haimei Liu, Huiqiao Li, Xiaosheng Fang, Meiyong Liao, Liang Li, Haoshen Zhou, Yasuo Koide, Yoshio Bando, Dmitri Golberg. Centimeter-Long V2O5 Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties. Advanced Materials. 22 [23] (2010) 2547-2552 10.1002/adma.200903586
  14. Guang-chao Chen, Meiyong Liao, Masataka Imura, Kiyomi Nakajima, Yoshimasa Sugimoto, Yasuo Koide. Fabrication and electrical properties of SrTiO3/diamond junctions. Diamond and Related Materials. 19 [4] (2010) 319-323 10.1016/j.diamond.2009.08.004
  15. Tianyou Zhai, Xiaosheng Fang, Meiyong Liao, Xijin Xu, Liang Li, Baodan Liu, Yasuo Koide, Ying Ma, Jiannian Yao, Yoshio Bando, Dmitri Golberg. Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors. ACS Nano. 4 [3] (2010) 1596-1602 10.1021/nn9012466
  16. Yiuri Garino, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide, Toshimichi Ito. Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study. physica status solidi (a). 207 [6] (2010) 1460-1463 10.1002/pssa.200925448
  17. Xiaosheng Fang, Yoshio Bando, Meiyong Liao, Tianyou Zhai, Ujjal K. Gautam, Liang Li, Yasuo Koide, Dmitri Golberg. An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability. Advanced Functional Materials. 20 [3] (2010) 500-508 10.1002/adfm.200901878
  18. Yasuo Koide, M.Y. Liao, M. Imura. Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector. Diamond and Related Materials. 19 [2-3] (2010) 205-207 10.1016/j.diamond.2009.08.016
  19. Meiyong Liao, Yasuhito Gotoh, Hiroshi Tsuji, Kiyomi Nakajima, Masataka Imura, Yasuo Koide. Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties. Journal of Applied Physics. 107 [2] (2010) 024101 10.1063/1.3282706
  20. Meiyong Liao, Kiyomi Nakajima, Masataka Imura, Yasuo Koide. Improved ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond using CaF2 layer. Applied Physics Letters. 96 [1] (2010) 012910 10.1063/1.3291056
  21. Masataka Imura, Kiyomi Nakajima, Meiyong Liao, Yasuo Koide, Hiroshi Amano. Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy. Journal of Crystal Growth. 312 [3] (2010) 368-372 10.1016/j.jcrysgro.2009.11.017
  22. Meiyong Liao, Xi Wang, Tokuyuku Teraji, Satoshi Koizumi, Yasuo Koide. Light intensity dependence of photocurrent gain in single-crystal diamond detectors. Physical Review B. 81 [3] (2010) 10.1103/physrevb.81.033304
2009
  1. Xiaosheng Fang, Shenglin Xiong, Tianyou Zhai, Yoshio Bando, Meiyong Liao, Ujjal K. Gautam, Yasuo Koide, Xiaogang Zhang, Yitai Qian, Dmitri Golberg. High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors. Advanced Materials. 21 [48] (2009) 5016-5021 10.1002/adma.200902126
  2. Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, F. Yoshifusa. Schottky photodiode using submicron thick diamond epilayer for flame sensing. Nano-Micro Letters. 1 [1] (2009) 30-33 10.1007/bf03353603
  3. 小出 康夫. ダイヤモンド電子デバイスのための半導体物理. NEW DIAMOND. 95 [4] (2009) 9-16
  4. Yiuri Garino, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide, Toshimichi Ito. p-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation. physica status solidi (a). 206 [9] (2009) 2082-2085 10.1002/pssa.200982217
  5. Tokuyuki Teraji, Yasuo Koide, Toshimichi Ito. High-temperature stability of Au/p-type diamond Schottky diode. physica status solidi (RRL) - Rapid Research Letters. 3 [6] (2009) 211-213 10.1002/pssr.200903151
  6. T. Teraji, Y. Garino, Y. Koide, T. Ito. Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment. Journal of Applied Physics. 105 [12] (2009) 126109 10.1063/1.3153986
  7. Meiyong Liao, Masataka Imura, Xiaosheng Fang, Kiyomi Nakajima, Guangchao Chen, Yasuo Koide. Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor. Applied Physics Letters. 94 [24] (2009) 242901 10.1063/1.3156030
  8. Jose, LIAO, Meiyong, Jean-Paul Kleider, KOIDE, Yasuo, IMURA, Masataka. Ultraviolet Detectors Based on Ultraviolet&#8211;Ozone Modified Hydrogenated Diamond Surfaces. APPLIED PHYSICS EXPRESS. 2 [6] (2009) 065501-1-065501-3
  9. Xiaosheng Fang, Yoshio Bando, Meiyong Liao, Ujjal K. Gautam, Chunyi Zhi, Benjamin Dierre, Baodan Liu, Tianyou Zhai, Takashi Sekiguchi, Yasuo Koide, Dmitri Golberg. Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors. Advanced Materials. 21 [20] (2009) 2034-2039 10.1002/adma.200802441
  10. 羽田 肇, 小出 康夫. 物理センサ:研究・開発の考え方とその動向. セラミックス. 44 [3] (2009) 134-138
  11. 小出 康夫. ダイヤモンドを用いた紫外線センサの開発. セラミックス. 44 [3] (2009) 161-166
2005
  1. Shozo Kono, Yasuo Koide. Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity. Japanese Journal of Applied Physics. 44 [12] (2005) 8378-8382 10.1143/jjap.44.8378
  2. Yasuo Koide, Meiyong Liao, Jose Alvarez. Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor. MATERIALS TRANSACTIONS. 46 [9] (2005) 1965-1968 10.2320/matertrans.46.1965
  3. Meiyong Liao, Jose Alvarez, Yasuo Koide. Thermal Stability of Diamond Photodiodes Using Tungsten Carbide as Schottky Contact. Japanese Journal of Applied Physics. 44 [11] (2005) 7832-7838 10.1143/jjap.44.7832
  4. 小出 康夫, 廖 梅勇, アルバレッツ ホセ アントニオ. 熱安定ダイヤモンド新紫外線フォトダイオードの開発. ニューダイヤモンドフォーラム. 79 [4] (2005) 32-33
  5. Jose Alvarez, Meiyong Liao, Yasuo Koide. Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond. Applied Physics Letters. 87 [11] (2005) 113507 10.1063/1.2048807
  6. Yasuo Koide, Meiyong Liao, Jose Alvarez, KOIDE, Yasuo, 村上正紀. Narrow and Wide-Bandgap Semiconductor Materials. MATERIALS TRANSACTIONS. 46 [9] (2005) 1957-1957
  7. Meiyong Liao, Yasuo Koide, Jose Alvarez. Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact. Applied Physics Letters. 87 [2] (2005) 022105 10.1063/1.1992660
  8. Yasuo Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, T. Sakai. Admittance spectroscopy for phosphorus-doped n-type diamond epilayer. Applied Physics Letters. 86 [23] (2005) 232105 10.1063/1.1944896
  9. Yasuo Koide. Enhancement of donor ionization in phosphorus-doped n-diamond. Applied Surface Science. 244 [1-4] (2005) 26-29 10.1016/j.apsusc.2004.09.125
  10. 小出 康夫, 鈴木恒則. 教育シンポジウム「崖っ淵の科学教育」. 応用物理. 74 [3] (2005) 378-378
  11. Yasuo Koide. Analysis for Electron Concentrations in n-Diamond/III–Nitride Heterostructure and Phosphorus δ-Doped Structure in Diamond. Japanese Journal of Applied Physics. 44 [1A] (2005) 55-59 10.1143/jjap.44.55
2004
  1. 小出 康夫. ダイヤモンドのドーピング制御. 応用物理学会薄膜・表面物理分科会NEW LETTER. 122 (2004) 15-22
  2. 村上正紀, KOIDE, Yasuo, 守山実希, 着本享. Development of Electrode Materials for Semiconductor Devices. MATERIALS SCIENCE FORUM. 475 (2004) 1705-1714
  3. Yasuo Koide. Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor. Diamond and Related Materials. 13 [11-12] (2004) 1963-1966 10.1016/j.diamond.2004.07.006
  4. 小出 康夫. ダイヤモンド電子デバイスの展望. NEW DIAMOND. 74 (2004) 36-36
  5. Yasuo Koide. Analysis of Electron Statistics Involving Compensation and Deep-Dopant Effects for Phosphorus-Doped n-Type Diamond. Japanese Journal of Applied Physics. 43 [6A] (2004) 3307-3310 10.1143/jjap.43.3307
  6. 大貫仁, 長野隆洋, 小出 康夫, 中谷亮一, 赤星晴夫. 電子・情報デバイスの材料戦略概要ー化合物半導体ー. まてりあ. 43 [1] (2004) 3-6

会議録 TSV

2012
  1. L. W. Sang, M. Y. Liao, Y. Koide, M. Sumiya. InGaN photodiodes using CaF2 insulator for high-temperature UV detection. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2012, 953-956
  2. Eiichiro Watanabe, Arolyn Conwill, Daiju Tsuya, Yasuo Koide. Low contact resistance metals for graphene based devices. DIAMOND AND RELATED MATERIALS. 2012, 171-174
  3. 井上大介, 三浦篤志, 野村壮史, 藤川久喜, 佐藤和夫, 杉本 喜正, 津谷 大樹, 池田 直樹, 小出 康夫. プラズモニックカラーフィルター. 次世代ナノ技術に関する時限研究専門委員会第1回研究会講演集. 2012, 27-35
  4. Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano. Development of AlN/diamond heterojunction field effect transistors. DIAMOND AND RELATED MATERIALS. 2012, 206-209
  5. Meiyong Liao, Zouwen Rong, Shunichi Hishita, Masataka Imura, Satoshi Koizumi, Yasuo Koide. Nanoelectromechanical switch fabricated from single crystal diamond: Experiments and modeling. DIAMOND AND RELATED MATERIALS. 2012, 69-73
2010
  1. IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Amano Hiroshi. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy. DIAMOND AND RELATED MATERIALS. 2010, 131-133
  2. IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Amano Hiroshi. Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH. 2010, 1325-1328
  3. 池田 直樹, 津谷 大樹, 杉本 喜正, 小出 康夫, 三浦篤志, 井上大介, 野村壮士, 藤川久喜, 佐藤和夫. アルミニウム表面プラズモンカラーフィルタ. 電子情報通信学会技術研究報告 信学技報. 2010, 129-132
  4. Y. Sugimoto, N. Ikeda, D. Tsuya, N. Ozaki, H. Oda, A. Yamanaka, A. Miura, T. Nomura, D. Inoue, H. Fujikawa, S. Ohkouchi, Y. Watanabe, Y. Koide, K. Satoh, K. Asakawa. Nanophotonics technology for advanced quantum dot/photonic crystal device and metal/semiconductor plasmonic device. IEEE XPLORE DIGITAL LIBRARY. 2010
  5. SUGIMOTO, Yoshimasa, IKEDA, Naoki, TSUYA, Daiju, Hisaya Oda, Kuon Inoue, Atsushi Miura, Daisuke Inoue, Tsuyoshi Nomura, Hisayoshi Fujikawa, Kazuo Sato, Nobuhiko Ozaki, Shunsuke Ohkouchi, WATANABE Yoshinori, KOIDE, Yasuo, ASAKAWA, Kiyoshi. RECENT DEVELOPMENT OF NANOPHOTONIC INTEGRATED DEVICES AND MATERIALS. COMPOUND SEMICONDUCTOR PHOTONICS Materials, Devices and Integration. 2010, 142-144
  6. Kiyoshi Asakawa, SUGIMOTO, Yoshimasa, IKEDA, Naoki, TSUYA, Daiju, KOIDE, Yasuo, WATANABE, Yoshinori, Nobuhiko Ozaki, Denish Kumar v, Takeshi Nomura, Daisuke Inoue, Atsushi Miura, Hisayoshi Fujikawa, Kazuo Sato. Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device. IEEE CONFERENCE PROCEEDINGS CAOL 2010. 2010, 18-24
  7. Yasuo Koide, M.Y. Liao, M. Imura. Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector. DIAMOND AND RELATED MATERIALS. 2010, 205-207
  8. Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2010, 2365-2367
2006
  1. KOIDE, Yasuo, LIAO, Meiyong, ALVAREZ, Jose Antonio. Photovoltaic Schottky-type UV-photodiode using B-doped p-diamond epilayer. Proceedings of EMS-25. 2006, 100-101
2005
  1. KOIDE, Yasuo, LIAO, Meiyong, ALVAREZ, Jose Antonio. Development of thermally stable, visible-blind deep-ultraviolet diamond photodiode. The EMS24. 2005, 21-22
  2. LIAO, Meiyong, ALVAREZ, Jose Antonio, KOIDE, Yasuo. Tungsten carbide Schottky contact to diamond for thermally stable photodiode . DIAMOND AND RELATED MATERIALS. 2005, 2003-2006
  3. KOIDE, Yasuo. Theoretical analysis of electron statistics for n-type diamond. MATERIALS SCIENCE FORUM. 2005, 1719-1724
  4. KOIDE, Yasuo, KOIZUMI, Satoshi, KANDA, Hisao, 鈴木真理子, 吉田博昭, 佐久間尚志, 小野富男, 酒井忠司. Admittance spectroscopy of phosphorus-doped n-diamond homoepitaxial layer. DIAMOND AND RELATED MATERIALS. 2005, 2011-2014
  5. KOIDE, Yasuo, KOIZUMI, Satoshi, KANDA, Hisao, 鈴木真理子, 吉田博昭, 佐久間尚志, 小野富男, 酒井忠司. Admittance spectroscopy of phosphorus-doped n-diamond epilayer. The 24th EMS Proceedings. 2005, 327-328

口頭発表 TSV

2020
  1. NABATAME, Toshihide, Takashi Onaya, Erika Maeda, Masashi Hirose, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo. Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices. 20th International conference on Atomic Layer Deposition (ALD/ALE 2020). 2020
  2. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Diamond Nano-/Micro-Fin Channels for Metal-Oxide-Semiconductor Field-Effect Transistors. The 13th MANA International Symposium 2020 jointly with ICYS. 2020
  3. 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 大井 暁彦, 池田 直樹, 色川 芳宏, 小出 康夫, 清野肇. Al2O3/β-Ga2O3スタック構造のPMA効果と界面特性の関係. 電子デバイス界面テクノロジー研究会 ー材料・プロセス・デバイス特性の物理ー. 2020
2019
  1. NABATAME, Toshihide, IROKAWA, Yoshihiro, 塩崎 宏司, KOIDE, Yasuo. Electrical properties of GaN MOS capacitors with ALD-High-k gate insulators. MATERIALS RESEARCH MEETING 2019. 2019
  2. ジャン ジロン, SANG, Liwen, ウ ハイファ, Jian Huang, Linjun Wang, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. Galfenol-Ti-Diamond Multilayer MEMS Resonator for Magnetic Sensor Working up to 500oC . 2019 IEEE International Electron Devices Meeting (IEDM). 2019
  3. KOIDE, Yasuo. Future prospect of diamond materials for semiconductor industry in 5G era. Carbontech 2019. 2019
  4. 廣瀨 雅史, NABATAME, Toshihide, 前田 瑛里香, OHI, Akihiko, KOIDE, Yasuo, IROKAWA, Yoshihiro, IKEDA, Naoki, 清野肇. Influence of post-metallization annealing on the characteristics of Pt/Al2O3/n-β-Ga2O3 capacitors after post-deposition annealing. 2019 IWDTF. 2019
  5. SANG, Liwen, 任 兵, ENDO, Raimu, MASUDA, Takuya, NABATAME, Toshihide, SUMIYA, Masatomo, KOIDE, Yasuo, LIAO, Meiyong. Enhanced doping efficiency of p-GaN grown on free standing GaN substrates. The 9th Asia-Pacific Workshop on Widegap Semiconductors. 2019
  6. LIAO, Meiyong, SANG, Liwen, KOIZUMI, Satoshi, IMURA, Masataka, KOIDE, Yasuo. On-chip Single Crystal Diamond MEMS. 第33回ダイヤモンドシンポジウム講演プログラム. 2019
  7. LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo. Development of boron-doped diamond metal-semiconductor field-effect transistors. 第33回ダイヤモンドシンポジウム. 2019
  8. NABATAME, Toshihide, 前田 瑛里香, INOUE, Mari, 廣瀨 雅史, 清野肇, IROKAWA, Yoshihiro, 塩崎宏司, KOIDE, Yasuo. Characteristics of several High-k gate insulators for GaN power device. 236th ECS Meeting. 2019
  9. 三石 和貴, 木本 浩司, 色川 芳宏, 生田目 俊秀, 小出 康夫. 電子顕微鏡による電子材料評価技術の最近の発展. 第 38 回電子材料シンポジウム (EMS38). 2019
  10. 井村 将隆, 津田 俊輔, 長田 貴弘, 山下 良之, 吉川 英樹, 小林 啓介, 小出 康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし. InGaNの表面-バルク電子状態評価. 第80回応用物理学会秋季学術講演会. 2019
  11. 土屋 敬志, 髙栁 真, 井村 将隆, 小出 康夫, 樋口透, 寺部 一弥. Liイオン伝導性固体電解質における電気二重層効果の確認. 第80回応用物理学会秋季学術講演会. 2019
  12. 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 大井 暁彦, 池田 直樹, 色川 芳宏, 岩井 秀夫, 安福 秀幸, 川田 哲, 高橋誠, 伊藤和博, 小出 康夫, 清野肇. Pt/Al2O3/β-Ga2O3 MOSキャパシタの熱処理温度による電気特性の変化. 第80回応用物理学会秋季学術講演. 2019
  13. LIAO, Meiyong, SANG, Liwen, IMURA, Masataka, KOIZUMI, Satoshi, KOIDE, Yasuo. On-chip Single Crystal Diamond MEMS with Electrical Actuation and Sensing. 2019年 第80回応用物理学会秋季学術講演会. 2019
  14. 小出 康夫. 次世代パワー半導体デバイス開発における材料学的課題. 第80回応用物理学会秋季学術講演会 シンポジウム. 2019
  15. LIU, Jiangwei, KOIDE, Yasuo. High current output T-type and triple-gate hydrogenated diamond MOSFETs. 30th International Conference on Diamond and Carbon Materials. 2019
  16. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. Electrical properties of hydrogenated diamond MOSFETs after annealing at 500 °C. 30th International Conference on Diamond and Carbon Materials. 2019
  17. Orlando Auciello, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo. Science/Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics. 7th International Symposium on Integrated Functionalities. 2019
  18. 廣瀨 雅史, NABATAME, Toshihide, 前田 瑛里香, IKEDA, Naoki, OHI, Akihiko, IROKAWA, Yoshihiro, KOIDE, Yasuo, 清野肇. Influence of surface cleaning process on initial growth of ALD-Al2O3 and electrical properties of Pt/Al2O3/β-Ga2O3 MOS capacitors. ALD2019. 2019
  19. HIROSE, Masafumi, NABATAME, Toshihide, YUGE, Kazuya, MAEDA, Erika, OHI, Akihiko, IKEDA, Naoki, IROKAWA, Yoshihiro, IWAI, Hideo, 安福 秀幸, KAWADA, Satoshi, KOIDE, Yasuo. Influence of post-deposition annealing on electrical characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. INFOS 2019. 2019
  20. TSUCHIYA, Takashi, TAKAYANAGI, Makoto, IMURA, Masataka, KOIDE, Yasuo, 樋口 透, TERABE, Kazuya. In-situ Control of Hole Density in Hydrogen-Terminated Diamond Achieved with All-Solid-State Electric Double Layer Transistor. 22nd International Conference on Solid State Ionics (SSI-22). 2019
  21. KOIDE, Yasuo. Advanced diamond FET and MEMS devices. 2019 international Symposium on Single Crystal Diamond and Electronics. 2019
  22. LIAO, Meiyong, ウ ハイファ, SANG, Liwen, IMURA, Masataka, TERAJI, Tokuyuki, KOIDE, Yasuo. Ultra-high quality factors and high-reliability diamond mechanical resonators on diamond. 13th Conference on New Diamond and Nano Carbons (NDNC2019. 2019
  23. IMURA, Masataka, OOSATO, Hirotaka, LIAO, Meiyong, KOIDE, Yasuo. Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET. 13th Conference on New Diamond and Nano Carbons (NDNC2019). 2019
  24. Orlando Auciello, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo, Geunhee Lee. Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics. 13th New Diamond and Nano Carbon Conference(NDNC 2019). 2019
  25. LIAO, Meiyong, SANG, Liwen, SHIMAOKA, Takehiro, IMURA, Masataka, KOIZUMI, Satoshi, KOIDE, Yasuo. Metal-insulator-metal-semiconductor (MIMS) field-effect transistors based on semiconductor diamond with controllable threshold voltages . The 13th New Diamond and Nano Carbon Conference(NDNC 2019). 2019
  26. KOIDE, Yasuo. Wide Bandgap III-Nitride and Diamond Devices and Characterization. 32nd IEEE International Conference on Microelectronic Test Structures "32nd ICMTS Conference". 2019
  27. 小出 康夫. 次世代省エネルギー半導体デバイス開発における材料学的課題. ファインケミカルジャパン2019(共催:ジャパンライフサイエンスウィーク). 2019
  28. YUGE, Kazuya, NABATAME, Toshihide, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, 上殿 明良, SANG, Liwen, KOIDE, Yasuo, 大石 知司. Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. Electron Devices Technology and Manufacturing Conference. 2019
  29. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Development of hydrogenated diamond triple-gate fin-type MOSFETs. 第66回応用物理学会 春季学術講演会. 2019
  30. 井村 将隆, 大里 啓孝, 廖 梅勇, 小出 康夫. メタルマスクを用いた(111)ダイヤモンド選択成長と水素終端ダイヤモンド FET への応用. 第66回応用物理学会 春季学術講演会. 2019
  31. SEO, Okkyun, KIM, Jaemyung, HIROI, Satoshi, IROKAWA, Yoshihiro, NABATAME, Toshihide, KOIDE, Yasuo, SAKATA, Osami. Characterization of a GaN wafer and a homo-epitaxial layer by synchrotron X-ray topography techniques. The 66th JSAP Spring Meeting, 2019. 2019
  32. LIAO, Meiyong, ウ ハイファ, SANG, Liwen, IMURA, Masataka, KOIZUMI, Satoshi, KOIDE, Yasuo. Electrical readout of diamond MEMS resonators. 2019年 第66回応用物理学会春季学術講演会. 2019
  33. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. Operations of Hydrogenated Diamond MOSFETs After Annealing at 500 °C. MANA International Symposium 2019. 2019
  34. 弓削 雅津也, 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, 上殿明殿, サン リウエン, 小出 康夫, 大石知司. Al2O3/n-GaN界面での伝導帯/価電子帯近傍の界面準位密度に関する研究. 膜・表面物理分科会、シリコンテクノロジー分科会. 2019
  35. 廣瀨雅史, 生田目俊秀, 弓削雅津也, 前田瑛里香, 大井暁彦, 池田直樹, 色川芳宏, 小出康夫. Al2O3絶縁膜を用いたn-GaN及びn-β-Ga2O3キャパシタの電気特性の比較. 第24回電子デバイス界面テクノロジー研究会. 2019
  36. LIAO, Meiyong, ウ ハイファ, SANG, Liwen, TERAJI, Tokuyuki, IMURA, Masataka, KOIDE, Yasuo. Ultrahigh Quality factor diamond MEMS resonator. The 6th French Japanese workshop on diamond power devices. 2019
2018
  1. 髙栁 真, 土屋 敬志, 井村 将隆, 小出 康夫, Tohru Higuchi, 寺部 一弥. 固体電気二重層トランジスタを用いた水素終端ダイヤモンドのキャリア制御. 第28回日本MRS年次大会. 2018
  2. SANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Interface trap states at p-GaN MO(I)S capacitors with different gate dielectrics. IWN2018. 2018
  3. KIM, Jaemyung, SEO, Okkyun, SONG, ChulHo, HIROI, Satoshi, CHEN, Yanna, IROKAWA, Yoshihiro, NABATAME, Toshihide, KOIDE, Yasuo, SAKATA, Osami. Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography. IWN 2018. 2018
  4. 任 兵, SUMIYA, Masatomo, Jian Huang, Ke Tang, LIAO, Meiyong, KOIDE, Yasuo, Linjun Wang, SANG, Liwen. Interface trap characterization of Al2O3/GaN MOS capacitors on GaN substrate with surface treatments. IWN2018. 2018
  5. 太田優一, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. Band alignment of wurtzite BN related alloys. International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018
  6. IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Crystalline intermediate layers in oxides/GaN(0001). International Workshop on Nitride Semiconductors 2018. 2018
  7. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, BANAL, Ganipan Ryan, YOSHIKAWA, Hideki, YANGAnli, YAMASHITA, Yoshiyuki, 小林啓介, KOIDE, Yasuo, 山口智広, 金子昌充, 荒木努, 名西やすし. Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy. International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018
  8. NABATAME, Toshihide, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo. Study of High-k gate insulator for GaN power device by atomic layer deposition. 31st International Microprocesses and Nanotechnology Conference. 2018
  9. IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, SUZUKI, Taku, YUGE, Kazuya, OHI, Akihiko, NABATAME, Toshihide, OHNISHI, Tsuyoshi, KIMOTO, Koji, KOIDE, Yasuo. Comprehensive Study of Native Oxides on GaN(0001). International Workshop on Nitride Semiconductors 2018. 2018
  10. 坂田 修身, キム ジェミョン, ソ オッキュン, ソン チョルホ, チェン ヤナ, 廣井 慧, 色川 芳宏, 生田目 俊秀, 小出 康夫. ホモエピタキシャルGaN (0001)格子面の方位マッピング. 日本結晶学会2018年度年会. 2018
  11. KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN gate. 4th E-MRS & MRS-J SYMPOSIUM. 2018
  12. LIU, Jiangwei, KOIDE, Yasuo. Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits. E-MRS & MRS-J BILATERAL SYMPOSIUM. 2018
  13. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YOSHIKAWA, Hideki, YAMASHITA, Yoshiyuki, 小林啓介, KOIDE, Yasuo, 山口智広, 荒木努, 名西やすし. Surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0&lt;x&lt;1) epilayers by hard X-ray photoelectron spectroscopy. 第37回電子材料シンポジウム. 2018
  14. 井村 将隆, 小出 康夫, 荒木努, 名西やすし. InGaN系窒化物半導体の表面―バルク電子状態評価. 第110回研究会・特別公開シンポジウム 「紫外発光デバイスの最前線と. 2018
  15. SANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers. 応用物理学会. 2018
  16. 廖 梅勇, ウ ハイファ, サン リウエン, 井村 将隆, 寺地 徳之, 小出 康夫. 超高品質因子を持つ単結晶ダイヤモンドMEMS共振子. 第79回応用物理学会秋季学術講演会. 2018
  17. キム ジェミョン, ソ オッキュン, ソン チョルホ, 廣井 慧, チェン ヤナ, 色川 芳宏, 生田目 俊秀, 小出 康夫, 坂田 修身. Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography. JSAP Autumn Meeting 2018. 2018
  18. 廣瀨 雅史, 生田目 俊秀, 弓削 雅津也, 前田 瑛里香, 大井 暁彦, 色川 芳宏, 小出 康夫, 池田 直樹. 表面処理方法がβ-Ga2O3/Al2O3/Pt MOSキャパシタの電気特性へ及ぼす影響. 第79回応用物理学会秋季学術講演会. 2018
  19. 大西 剛, 三石 和貴, 小出 康夫, 色川 芳宏, 鈴木 拓, 弓削 雅津也, 大井 暁彦, 生田目 俊秀, 木本 浩司. GaN(0001)自然酸化膜の複合的評価. 第79回応用物理学会秋季学術講演会. 2018
  20. 廣瀨 雅史, 生田目 俊秀, 弓削 雅津也, 前田 瑛里香, 大井 暁彦, 色川 芳宏, 小出 康夫, 池田 直樹. 表面処理方法がβ-Ga2O3/Al2O3/Pt MOSキャパシタの電気特性へ及ぼす影響. 第79回応用物理学会秋季学術講演会. 2018
  21. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Development of AlN/Diamond heterostructure formation and unique interface property. European Materials Research Society (E-MRS) 2018 Fall Meeting. 2018
  22. 小出 康夫, 生田目 俊秀, 色川 芳宏, 三石 和貴. GaN系絶縁膜制御技術. 応用物理学会 特別シンポジウム:GaNのエピタキシャル成長とデバイス. 2018
  23. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. High-quality diamond epitaxial layer growth and electron devices application. SSDM2018. 2018
  24. 石戸谷 章, 川田 哲, 岩井 秀夫, 伊藤 真二, 西尾 満章, 岩撫 暁生, 小出 康夫. 窒化ガリウムウェハー中の微量成分分析. 日本分析化学会 第67年会. 2018
  25. YUGE, Kazuya, NABATAME, Toshihide, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, Akira Uedono, SANG, Liwen, KOIDE, Yasuo, Tomoji Ohishi. Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement. Solid State Devices and Materials. 2018
  26. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Enhancement-mode hydrogenated diamond MOSFETs. 29th International Conference on Diamond and Carbon Materials. 2018
  27. 井村 将隆, 小出 康夫, 荒木努, 名西やすし. 硬X線光電子分光法を用いたInGaN系窒化物半導体の表面―バルク電子状態評価. 第10回 ナノ構造・エピタキシャル成長講演会. 2018
  28. 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, サン リウエン, 小出 康夫, 大石知司. Al2O3/n-GaNキャパシタの自然酸化膜層が電気特性へ及ぼす影響. シリコン材料・デバイス研究会 (SDM). 2018
  29. 小出 康夫, 坂田 修身, 渡邊 賢司, 三石 和貴, 生田目 俊秀, 色川 芳宏. p-GaN中の結晶欠陥の複合的な評価. 応用物理学会 結晶工学分科 会第149回結晶工学分科会研究会. 2018
  30. LIAO, Meiyong, KOIDE, Yasuo. Single crystal diamond MEMS: Concpet, Fabrication, and Applications. International Conference on Expanding Frontiers of Carbon MEMS. 2018
  31. YUGE, Kazuya, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, SANG, Liwen, Tomoji Ohishi, KOIDE, Yasuo. Role of a native oxide interlayer on electrical characteristics of Al2O3/n-GaN capacitors. Joint ISTDM/ISCI 2018 Conference. 2018
  32. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. Logic circuits using depletion/Enhancement-modes H-diamond MOSFETs. 12th New Diamond and Nano Carbons Conference NDNC2018. 2018
  33. 小出康夫. 評価基盤領域 成果報告. 省エネルギー社会の実現に資する次世代半導体研究開発第2回公開シン. 2018
  34. 小出 康夫. 評価基盤領域 成果報告. 省エネルギー社会の実現に資する次世代半導体研究開発第2回公開シン. 2018
  35. 土屋 敬志, 井村 将隆, 小出 康夫, 寺部 一弥. 磁気で動作する電気二重層トランジスタ. 第65回 応用物理学会 春季学術講演会. 2018
  36. 弓削 雅津也, 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, サン リウエン, 知京 豊裕, 小出 康夫, 大石 知司. Al2O3/n-GaNキャパシタの酸化ガリウム界面層が電気特性へ及ぼす影響. 第65回応用物理学会春季学術講演会. 2018
  37. 井村 将隆, 津田 俊輔, 長田 貴弘, 山下 良之, 吉川 英樹, 小林 啓介, 小出 康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし. Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化. 第65回応用物理学会春季学術講演会. 2018
  38. TSUCHIYA, Takashi, IMURA, Masataka, KOIDE, Yasuo, TERABE, Kazuya. Magnetic Control of Electric Double Layer Transistor. MANA International Symposium 2018. 2018
  39. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. III-nitride/diamond heterojunction. 4th JST Sakura Science Workshop. 2018
  40. TSUCHIYA, Takashi, IMURA, Masataka, KOIDE, Yasuo, TERABE, Kazuya. Magnetic Control of Electric Double Layer Transistor. Nanotech 2018 第17回 国際ナノテクノロジー総合展・技術会議. 2018
  41. 劉 江偉, 小出 康夫. ダイヤモンド論理回路チップの開発. SATテクノロジーショーケース2018. 2018
2017
  1. 色川 芳宏, 鈴木 拓, 弓削 雅津也, 大井 暁彦, 生田目 俊秀, 木本 浩司, 大西 剛, 三石 和貴, 小出 康夫. Surface analysis of native oxides on GaN(0001): An LEIS and RHEED study. 第18回「イオンビームによる表面・界面解析」特別研究会. 2017
  2. 廖 梅勇, ウ ハイファ, サン リウエン, 寺地 徳之, 井村 将隆, 小出 康夫. 超高品質因子を持つ単結晶ダイヤモンドMEMS振動子. 第31回ダイヤモンドシンポジウム. 2017
  3. 寺地 徳之, フィオーリ ジヨーンイヴ アレクサンドレ, 桐谷 範彦, 谷本 智, ゲラール エチェン, 小出 康夫. 炭化タングステン縦型ダイヤモンドショットキーダイオードの漏れ電流増加機構. 第31回ダイヤモンドシンポジウム. 2017
  4. Yuichi Ota, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. Electronic and optical properties of BAlN. International Workshop on UV Materials and Devices 2017. 2017
  5. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp. International Workshop on UV Materials and Devices 2017. 2017
  6. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. III-nitride/diamond hybrid systems. 3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN. 2017
  7. KOIDE, Yasuo. Depletion/Enhancement-modes control of H-diamond MOSFETs. OIST Diamond Workshop 2017. 2017
  8. LIAO, Meiyong, WU, Haihua, SANG, Liwen, TERAJI, Tokuyuki, IMURA, Masataka, KOIDE, Yasuo. ltra-high quality factor single crystal diamond MEMS resonators. OIST Diamond Workshop 2017” (ODW2017). . 2017
  9. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Microstructure and electrical property of AlN/Diamond(111) heterojunction. OIST Diamond WS2017. 2017
  10. IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo, NAKAYAMA, Yoshiko, TAKEGUCHI, Masaki, Shunsuke Mizutani , Takuya Tabata, Souta Nakagawa, Yoshio Honda, Masashi Yamaguchi, Hiroshi Amano. Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron. The 11th International Symposium on Semiconductor Light Emitting. 2017
  11. 劉 江偉, 小出 康夫. ダイヤモンドMOSFET論理回路の開発. NIMS WEEK 2017. 2017
  12. LIAO, Meiyong, KOIDE, Yasuo. Semiconductor diamond: from fundamental to applications. The 8th Asia-Pacific Workshop on Widegap Semiconductors. 2017
  13. TERAJI, Tokuyuki, Haihua Wu, SANG, Liwen, WU, Kongping, IMURA, Masataka, KOIDE, Yasuo, LIAO, Meiyong. Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient. EMRS 2017 Fall meeting. 2017
  14. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. Normally-on/off control of diamond FETs and logic circuit demonstration. The 2017 E-MRS Fall Meeting and Exhibit. 2017
  15. KOIDE, Yasuo. Development of normally-on/off diamond MOSFETs and logic circuits. Schulich symposium. 2017
  16. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Logic circuits with hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  17. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 st. 28th International Conference on Diamond and Carbon Materials. 2017
  18. LIAO, Meiyong, WU, Haihua, SANG, Liwen, TERAJI, Tokuyuki, IMURA, Masataka, KOIDE, Yasuo. Surface effect and improvement of the quality factor of single crystal diamond NEMS resonators . 28th International Conference on Diamond and Carbon Materials. 2017
  19. LIU, Jiangwei, OOSATO, Hirotaka, WANG, Xi, LIAO, Meiyong, KOIDE, Yasuo. Fabrication of triple-gate hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  20. KOIDE, Yasuo. Updates on Nanotechnology Development in Japan 2016-2017. 14TH ASIA NANO FORUM SUMMIT (ANFOS2017) . 2017
  21. LIAO, Meiyong, SANG, Liwen, IMURA, Masataka, KOIDE, Yasuo. Interface states governed photoelectrical properties of diamond deep-ultraviolet detector. The 29th International Conference on Defects in Semiconductors. 2017
  22. KOIDE, Yasuo, LIAO, Meiyong, IMURA, Masataka. Mechanism of photoconductivity gain and persistent photoconductivity for diamond Deep-Ultraviolet photodetector. 29th International Conference on Defects in Semiconductors. 2017
  23. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. The influence of interface states on the CaF2/p-GaN metal-insulator-semiconductor capacitors. International Conference on Defects in Semiconductors(CDS) 2017. 2017
  24. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. Strain and dislocations in the InGaN-based intermediate-band solar cel ls. International Conference on Defects in Semiconductors. 2017
  25. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. Strain and dislocations in the InGaN-based intermediate-band solar cells. International Conference on Defects in Semiconductors(ICDS) 2017. 2017
  26. LIU, Jiangwei, OOSATO, Hirotaka, LIAO, Meiyong, IMURA, Masataka, Eiichiro Watanabe, KOIDE, Yasuo. Diamond logic circuits with depletion- and enhancement-mode MOSFETs. 29th International Conference on Defects in Semiconductors. 2017
  27. REN, Bing, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo, SANG, Liwen. Fixed Charge and Trap States in Ni/Al2O3/GaN MIS Schottky Barrier Diodes for Power Device. International Conference on Defects in Semiconductors(ICDS) 2017. 2017
  28. WU, Kongping, SANG, Liwen, IMURA, Masataka, KOIDE, Yasuo, LIAO, Meiyong. Effect of surface hydrogen termination on the interface electronic properties of TiO2/diamond heterostructure. The 29th International Conference on Defects in Semiconductors . 2017
  29. IMURA, Masataka, Ota Yuichi, BANAL, Ganipan Ryan, KOIDE, Yasuo. Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy. 29th International Conference on Defects in Semiconductors. 2017
  30. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOIDE, Yasuo, KOBAYASHI, Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Ke Wang, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy. 12th International Conference on Nitride Semiconductors (ICNS12). 2017
  31. 小出 康夫. マテリアルズインフォマティクス最前線. New Diamond and Nano Carbon Conference, (NDNC2017). 2017
  32. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. D/E-mode control of diamond FETs and logic circuit demonstration. Conference on Single Crystal Diamond and Electronics (SCDE2017). 2017
  33. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). The 11th Conference on New Diamond and Nano Carbons (NDNC2017). 2017
  34. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. High-current triple-gate H-diamond MOSFET. New Diamond and Nano Carbon Conference, (NDNC2017). 2017
  35. TERAJI, Tokuyuki, J. Isoya, KOIZUMI, Satoshi, KOIDE, Yasuo. Homoepitaxial chemical vapor deposition of diamond film for ultra-light doping. The 11th International Conference on New Diamond and Nano Carbon. 2017
  36. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Enhancement-mode Hydrogenated Diamond MOSFETs and MOSFET Logic Circuits. 1st Workshop of &quot;LEADER&quot;. 2017
  37. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Diamond NOT and NOR logic circuits. 第64回応用物理学会春季学術講演会. 2017
  38. サン リウエン, 任 兵, 廖 梅勇, 角谷 正友, 小出 康夫. Growth rate dependence and leakage mechanism for vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates . 第64回応用物理学会春季学術講演会. 2017
  39. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017
  40. ウ ハイファ, サン リウエン, 小出 康夫, 廖 梅勇. High quality factor submicron-thick single crystal diamond cantilevers. つくば医工連携フォーラム 2017. 2017
2016
  1. LIAO, Meiyong, Masaya Toda, SANG, Liwen, TERAJI, Tokuyuki, IMURA, Masataka, KOIDE, Yasuo. High-quality factor diamond mechanical resonators. 第30回ダイヤモンドシンポジウム. 2016
  2. WUKongping, LIAO, Meiyong, KOIDE, Yasuo. Theoretical analysis of the interface electronics states of anatase TiO2/diamond interface. 第30回ダイヤモンドシンポジウム. 2016
  3. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. Fabrication of hydrogenated diamond MOSFET logic circuits. 第30回ダイヤモンドシンポジウム. 2016
  4. VERVENIOTIS, Elissaios, CERMAK Jan, OKAWA, Yuji, KOIDE, Yasuo, KROMKA Alexander, LEDINSKY Martin, JOACHIM, Christian, REZEK Bohuslav. Synthetic diamond thin films for electronics: functionalization, electronic transport and possible applications. 6th International Symposium on Transparent Conductive Materials. 2016
  5. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOIDE, Yasuo, KOBAYASHI, Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Ke Wang, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy. International Workshop on Nitride Semiconductors 2016 (IWN2016). 2016
  6. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Recent Developments in Diamond MOSFET Electronic Devices. ICYS Workshop FY2016. 2016
  7. ZHANG, Kexiong, SUMIYA, Masatomo, LIAO, Meiyong, KOIDE, Yasuo, SANG, Liwen. InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas. International Workshop on Nitride Semiconductors (IWN 2016). 2016
  8. 廖 梅勇, 戸田 雅也, サン リウエン, 寺地 徳之, 井村 将隆, 小出 康夫. 単結晶ダイヤモンド機械共振子の品質係数の向上. 第77回応用物理学会秋季学術講演会. 2016
  9. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. Hydrogenated diamond NOT and NOR logic gates composed of enhancement-mode and depletion-mode MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  10. 青木 俊周, 寺地 徳之, 小出 康夫, 塩島 謙次. 界面顕微光応答法を用いたAu/p形ダイヤモンドショットキー接触の2次元評価. 第77回応用物理学会秋季学術講演会. 2016
  11. バナル ガニパン ライアン, 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere. The 77th JSAP Autumn Meeting, 2016. 2016
  12. 劉 江偉, 大里 啓孝, 王 煕, 廖 梅勇, 小出 康夫. Fabrication of triple-gate fin-type hydrogenated diamond MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  13. BANAL, Ganipan Ryan, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors. International Conference on Diamond and Carbon Materials 2016. 2016
  14. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, KOIDE, Yasuo, MATSUMOTO Takao, SHIBATA Naoya, IKUHARA Yuuichi. Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Heterojunctions Prepared by MOVPE. International Conference on Diamond and Carbon Materials 2016. 2016
  15. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. AFM Conference 2016. 2016
  16. VERVENIOTIS, Elissaios, CERMAK Jan, OKAWA, Yuji, KOIDE, Yasuo, KROMKA Alexander, REZEK Bohuslav. Microscopically charged synthetic diamond as a functional interface for self-assembly of nanoparticles. AFM Conference 2016. 2016
  17. IMURA, Masataka, Ota Yuichi, BANAL, Ganipan Ryan, KOIDE, Yasuo. Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy. International workshop on UV materials and devices (IWUMD-2016). 2016
  18. IMURA, Masataka, Ota Yuichi, BANAL, Ganipan Ryan, KOIDE, Yasuo. Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy. 電子材料シンポジウム35. 2016
  19. Toshichika Aoki, TERAJI, Tokuyuki, KOIDE, Yasuo, Kenji Shiojima. Displacement Current of Au/p-type Diamond Schottky Contacts. ISCSI-VII/ISTDM2016. 2016
  20. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. High-k TiO2 on Diamond for Electronic Devices: Capacitor, Field-effect Transistor, and Logic Inverter. 10th International Conference on New Diamond and Nano Carbons. 2016
  21. LIAO, Meiyong, Masaya Toda, SANG, Liwen, HISHITA, Shunichi, IMURA, Masataka, Shuji Tanaka, KOIDE, Yasuo. Single Crystal Diamond Micromechanical and Nanomechanical Resonators. The 10th International Conference on New Diamond and Nano Carbon. 2016
  22. VERVENIOTIS, Elissaios, CERMAK Jan, OKAWA, Yuji, KOIDE, Yasuo, KROMKA Alexander, REZEK Bohuslav. Microscopically charged synthetic diamond as a functional interface for self-assembly of nanoparticles. 2016 E-MRS Spring Meeting and Exhibit. 2016
  23. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. 2016 E-MRS Spring Meeting and Exhibit. 2016
  24. 小出 康夫. パワー半導体材料の高品質化および光電子素子応用に関する研究. 日本金属学会2016年春季(第156回)大会. 2016
  25. バナル ガニパン ライアン, 井村 将隆, 小出 康夫. Structural quality of AlN epilayer grown on atomic layer deposition (ALD)-Al2O3/ sapphire substrate. The Japan Society of Applied Physics Spring Meeting, 2016. 2016
  26. サン リウエン, ジャン クーシオン, 角谷 正友, 廖 梅勇, 小出 康夫. PチャネルInGaN/GaN ヘテロ構造金属酸化物半導体電界効果トランジスタ. 応用物理学会春季学術講演会. 2016
  27. 廖 梅勇, 戸田 雅也, サン リウエン, 菱田 俊一, 井村 将隆, 田中秀治, 小出 康夫. 単結晶ダイヤモンド機械共振子のエネルギー散逸機構. 第63回応用物理学会春季学術講演会. 2016
  28. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. High-k TiO2 Films Deposition on Hydrogenated-diamond. 第63回応用物理学会春季学術講演会. 2016
  29. 塩島謙次, 青木俊周, 寺地 徳之, 小出 康夫. Au/p形ダイヤモンドショットキー接触の変位電流-p形GaNショットキー接触との比較-. 第63回応用物理学会春季学術講演会. 2016
  30. IMURA, Masataka, KOIDE, Yasuo. Heterojunction Field-Effect Transistors with Widegap AlN and Diamond Semiconductors. EMN Meeting on Field-Effect Transistors 2016. 2016
  31. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. MANA International Symposium 2016. 2016
  32. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Enhancement mode hydrogenated diamond MISFETs. MANA International Symposium 2016. 2016
  33. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k oxide gated diamond field effect transistor. WCSM-2016. 2016
  34. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of Normally Off Diamond Metal-insulator-semiconductor field-effect transistors. ICYS Workshop 2016. 2016
  35. 小出 康夫. 世界で活躍し,イノベーションを起こす実践的技術者育成に向けて. 技術科学大学と高専機構が連携・協働した教育改革中間報告会. 2016
2015
  1. 小出 康夫. ダイヤモンド電子デバイス. 日本真空学会2015年12月研究例会. 2015
  2. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, Jose Pinero, Daniel Araujo, KOIDE, Yasuo. Smart nano-scale interlayer formation for SBD electrical properties stable above 600K. 2015 MRS Fall Meeting & Exhibit. 2015
  3. LIAO, Meiyong, LIU, Jiangwei, SANG, Liwen, David Coatchup, Jiangling Li, IMURA, Masataka, KOIDE, Yasuo, Haitao Ye. Impedance Analysis of Hydrogen-Terminated Diamond MOS Structure. MRS Fall Meeting 2015 . 2015
  4. KOIDE, Yasuo. Diamond MOSFETs with high-k gate oxides. 2015 MRS Fall Meeting. 2015
  5. 井村 将隆, バナル ガニパン ライアン, 劉 江偉, 小出 康夫. AlN/ダイヤモンド及びダイヤモンド/AlN/サ ファイア上のヘテロエピタキシャル成長. 第29回ダイヤモンドシンポジウム. 2015
  6. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Control of normally-on/off in hydrogenated-diamond MISFET. 第29回ダイヤモンドシンポジウム. 2015
  7. IMURA, Masataka, OTAYuichi, BANAL, Ganipan Ryan, KOIDE, Yasuo. Effect of Boron incorporation on the structural quality of AlBN layers grown by MOVPE. 6th International Symposium on Growth of III-Nitrides(ISGN-6). 2015
  8. BANAL, Ganipan Ryan, IMURA, Masataka, KOIDE, Yasuo. Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate. The 6th International Symposium on Growth of III-Nitrides. 2015
  9. 小出 康夫. ダイヤモンド電子デバイス. 第9回ワイドギャップ半導体セミナー. 2015
  10. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. ZrO2 on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET. 第76回応用物理学会秋季講演会. 2015
  11. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, Jose Pinero, Daniel Araujo, 小出 康夫. Nano-scale interlayer formation for stable SBD electrical properties. 76th JSAP Autumn Meeting, 2015. 2015
  12. バナル ガニパン ライアン, 井村 将隆, 劉 江偉, 小出 康夫. ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET. The Japan Society of Applied Physics Autumn Meeting, 2015. 2015
  13. KOIDE, Yasuo, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, BANAL, Ganipan Ryan, Matsumoto Takao, Shibata Naoya, Ikuhara Yuichi. Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs. ICDCM 2015. 2015
  14. 小出 康夫. NIMSにおけるMaterials Informaticsの取り組み. 未来研究イニシアティブ グリーンナノマテリアル&quot;ものづくり&q. 2015
  15. KOIDE, Yasuo. Current status and prospect for power semiconductor diamond. 第34回電子材料シンポジウム 34th Electronic Materials Symposium. 2015
  16. KOIDE, Yasuo. H-Diamond MOSFETs with high-k oxide gate. the 3rd French-Japanese Workshop “Diamond power devices”. 2015
  17. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, KOIDE, Yasuo. Oxycarbide Formation for Ideal and Thermally Stable Diamond Schottky-barrier Diodes. 3rd - French-Japanese workshop on diamond power devices. 2015
  18. KOIDE, Yasuo. E and D-modes Diamond MOSFETs. OMNT Diamond 2015. 2015
  19. 小出 康夫. マテリアル工学特別講義5. 東京大学大学院マテリアル工学専攻. 2015
  20. KOIDE, Yasuo. Diamond Field Effect Transisot, Deep-UV sensor, and MEMS Devices. 2015 Collaborative Conference on 3D and Materials Research. 2015
  21. KOIDE, Yasuo. III-Nitride and Diamond Devices. SCDE 2015. 2015
  22. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, Jose Pinero, Daniel Araujo, KOIDE, Yasuo. Interlayer effects on the electrical property of WC/diamond Schottky diodes. 9th International Conference on New Diamond and Nano Carbons. 2015
  23. LIAO, Meiyong, LIU, Jiangwei, SANG, Liwen, David Coatchup, Jiangling Li, IMURA, Masataka, Haitao Ye, KOIDE, Yasuo. Impedance Spectroscopy of Diamond MOS Structure. the 9th International Conference on New Diamonds and Nano Carbon. 2015
  24. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Hydrogenated-diamond MISFET logic inverter. 9th International Conference on New Diamond and Nano Carbons. 2015
  25. KOIDE, Yasuo. High-k oxide gate Diamond FETs. 2015 MRS Spring Meeting & Exhibition. 2015
  26. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. Diamond FETs using heterojunction and high-k dielectrics. ISPlasma2015 / IC-PLANTS2015. 2015
  27. バナル ガニパン ライアン, 井村 将隆, 小出 康夫. Elimination of samll-angle grain boundary in AlN grown on sapphire substrate. The Japan Society of Applied Physics Spring Meeting, 2015. 2015
  28. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, Jose Pinero, Daniel Araujo, 小出 康夫. Role of the oxygen interlayer on electrical properties of WC/p-diamond Schottky diodes. The 62nd JSAP Spring Meeting, 2015. 2015
  29. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Atomic Layer Deposited High-k Insulators on Hydrogenated-diamond for Field Effect Transistors. MANA International Symposium 2015. 2015
  30. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, Jose Pinero, Daniel Araujo, KOIDE, Yasuo. Influence of the surface termination on the ideality of diamond Schottky diodes. Hasselt Diamond Workshop 2015 SBDD XX . 2015
  31. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Diamond Ring Oscillator. ICYS Workshop 2015. 2015
2014
  1. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, KOIDE, Yasuo. Thermally Stable p-Diamond Schottky Barrier Diodes at 600 K. 2014 MRS Fall Meeting & Exhibit. 2014
  2. KOIDE, Yasuo. Diamond Electronic Devices for Future Application. APMC2014. 2014
  3. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor. The 4th Annual World Congress of Nano-S&T. 2014
  4. 劉 江偉, 小出 康夫. Diamond logic inverter fabrication. NIMS forum 2014. 2014
  5. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. Diamond FETs using heterojunction and high-k dielectrics. EuMIC2014. 2014
  6. 小出 康夫. ダイヤモンド半導体の光・電子デバイス応用. 2014年日本金属学会秋季講演大会. 2014
  7. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫, 松元隆夫, 柴田直哉, 幾原雄一. AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察 と電気的特性評価. 第75回応用物理学会秋季学術講演会. 2014
  8. 上田諒浩, 宮田大輔, 徳田規夫, 井村 将隆, 小出 康夫, 小倉政彦, 山崎聡, 猪熊孝夫. ウェットアニールダイヤモンド(111)上 ALD-Al2O3 膜を用いたMOS キャパシタの電気的特性. 第75回応用物理学会秋季学術講演会. 2014
  9. 小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇. 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発. 第75回応用物理学会秋季学術講演会. 2014
  10. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor. 第75回応用物理学会秋季学術講演会. 2014
  11. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, 小出 康夫. WC/p-diamond interface reaction at 600 K for stable diodes. 75th JSAP Autumn Meeting 2014. 2014
  12. KOIDE, Yasuo. Diamond FETs with high-k oxide gate dielectrics. International Conference on Diamond and Carbon Materials 2014. 2014
  13. FIORI, Jean-Yves Alexandre, TERAJI, Tokuyuki, KOIDE, Yasuo. Schottky-Barrier Inhomogeneities in WC/p-diamond at High Temperature. Solid State Devices and Materials 2014. 2014
  14. IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. International Conference on Solid State Devices and Materials. 2014
  15. TOKUDA Norio, MIYATA Daisuke, UEDA Akihiro, CHONAN Tatsuma, MINAMIYAMA Takuma, INOKUMA Takao, IMURA, Masataka, KOIDE, Yasuo, OGURA Masahiko, MAKINO Toshiharu, TAKEUCHI Daisuke, YAMASAKI Satoshi. Atomically controlled diamond surfaces and interfaces. International Conference on Diamond and Carbon Materials . 2014
  16. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication. International Conference on Diamond and Carbon Materials. 2014
  17. 小出 康夫. TIA-nano共用装置活用における成果 . 第5回TIA-nano公開シンポジウム. 2014
  18. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. HfO2 on hydrogenated-diamond for field effect transistors. IUMRS-ICA 2014. 2014
  19. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Recent progress of field effect transistors by AlN/Diamond Heterostructure. The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014). 2014
  20. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Multilevel intermediate-band solar cell based on III-Nitrides. The International Workshop on Nitride Semiconductors (IWN2014). 2014
  21. KOIDE, Yasuo. DIAMOND FIELD EFFECT TRANSITORS WITH HIGH-K GATE INSULATOR. IMRC 2014, Cancun, Mexico. 2014
  22. IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. 第33回電子材料シンポジウム. 2014
  23. 寺地 徳之, 谷口 尚, 渡邊 賢司, 小泉 聡, 小出 康夫, J. Isoya. 同位体制御されたダイヤモンド成長のためのメタンガス高効率利用. 第33回電子材料シンポジウム(EMS33). 2014
  24. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 . 14th International Conference on Atomic Layer Deposition. 2014
  25. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Diamond metal-insulator-semiconductor field effect transistor logic inverters. 2014 International Symposium on Single Crystal Diamond Electroni. 2014
  26. KOIDE, Yasuo. Diamond Electronic and Photonic Devices. 2014 International Symposium on Single Crystal Diamond Electroni. 2014
  27. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro, KOIDE, Yasuo. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  28. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of low on-resistance diamond field effect transistors. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  29. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro. Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  30. 小出 康夫. 金属/半導体界面−GaAs, ZnSe, GaN, SiC, そしてダイヤモンド−. 半導体界面制御技術第154委員会第91回研究会. 2014
  31. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Normally-off HfO2/diamond field effect transistors fabrication. 2014年 第61回応用物理学会春季学術講演会. 2014
  32. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, 小出 康夫. WC/p-diamond Schottky Diode Behaviour at High Temperature. 2014年 第61回応用物理学会春季学術講演会. 2014
  33. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化. 第61回応用物理学会春季学術講演会. 2014
  34. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆, 大里 啓孝, 渡辺 英一郎, 津谷 大樹. Al2O3およびHfO2/水素終端ダイヤモンド界面の周波数分散特性. 第61回応用物理学会春季学術講演会. 2014
  35. 小出 康夫. 多種多様なマテリアル・かたち・サイズに対応するNIMS研究支援. 施設共用によるイノベーションの創出. 2014
  36. 小出 康夫. NIMSの共用施設/低炭素ハブ拠点・ナノテクプラットフォーム. つくば共用研究施設の活用によるイノベーション創出 産総研・NIMS・. 2014
  37. KOIDE, Yasuo. Diamond devices -Deep UV detector, heterojunction FET, and MEMS switches. Asia Nano Forum Summit Young Scientist Program (ANFYSP) Workshop. 2014
  38. 小出 康夫. 高効率電力変換用パワーデバイス材料開発とデバイスの実証. 文科省GRENE事業先進環境材料分野H25成果報告会. 2014
2013
  1. 小出 康夫. III族窒化物およびHigh-k材料を用いたダイヤモンド電子デバイス. 日本学術振興会第161委員会第84回・第162委員会第87回研究会. 2013
  2. 寺地 徳之, 谷口 尚, 小泉 聡, 小出 康夫, 磯谷順一. 原料ガスの高効率利用による同位体濃縮ダイヤモンドの合成. SiC及び関連半導体研究 第22回講演会. 2013
  3. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. HfO2/diamond電界効果トランジスタの作成. 第27回ダイヤモンドシンポジウム. 2013
  4. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, 小出 康夫. 炭化タングステン/p型ダイヤモンドショットキー界面の熱的安定性. 第27回ダイヤモンドシンポジウム. 2013
  5. KOIDE, Yasuo. Materials and Devices Research in NIMS. Fraunhofer Institute for Applied Physics Meeting. 2013
  6. 井村 将隆, 廖 梅勇, 小出 康夫. AlN/ダイヤモンドヘテロ接合を用いた電子デバイス. 第43回結晶成長国内会議 (NCCG-43). 2013
  7. 小出 康夫. NIMSの共用施設. 産総研オープンラボ講演会TIA-nano企画. 2013
  8. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. HfO2/Hydrogenated-diamond field effect transistors for power devices. 第13回 NIMSフォーラム. 2013
  9. LIAO, Meiyong, KOIDE, Yasuo. Diamond as a high-function semiconductor for photoelectronic and MEMS applications. IUPAC 9th International Conference on Novel Materials. 2013
  10. 小出 康夫. 北京の研究所. 日中科学技術交流協会訪中団報告会. 2013
  11. KOIDE, Yasuo. Diamond heterojunction and high-k Dielectric FETs. IEEE Nanotechnology Materials and Devices Conference. 2013
  12. TERAJI, Tokuyuki, TANIGUCHI, Takashi, WATANABE, Kenji, KOIZUMI, Satoshi, KOIDE, Yasuo, Junichi Isoya. Effective Use of Isotopically-Enriched Methane for Diamond Film Growth. 2013 JSAP-MRS Joint Symposia . 2013
  13. フィオーリ ジヨーンイヴ アレクサンドレ, 寺地 徳之, 小出 康夫. Homogeneity of WC p-type diamond Schottky interfaces. 第74回応用物理学会秋季学術講演会. 2013
  14. 井村 将隆, 津田 俊輔, 長田 貴弘, 武田 寛之, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMg-InNのエネルギーバンド分布評価. 第74回応用物理学会秋季学術講演会. 2013
  15. TERAJI, Tokuyuki, FIORI, Jean-Yves Alexandre, KOIDE, Yasuo. Reverse current transport at diamond Schottky barrier interfaces. 2013 JSAP-MRS Joint Symposia . 2013
  16. サン リウエン, 廖 梅勇, リャン チーフェン, 竹口 雅樹, ディエール バンジャマン, 関口 隆史, 小出 康夫, 角谷 正友. Multilevel intermediate-band solar cells based on III-Nitrides. 2013年 第74回応用物理学会秋季学術講演会. 2013
  17. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Electrical characteristics and band configuration of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor structure. 2013 JSAP-MRS Joint Symposia. 2013
  18. 廖 梅勇, 戸田 雅也, サン リウエン, 井村 将隆, 菱田 俊一, 田中秀治, 小出 康夫. 単結晶ダイヤモンドナノマシン共振特性のサイズ依存性. 2013年 第74回応用物理学会秋季学術講演会. 2013
  19. KOIDE, Yasuo. NIMS Nanofabrication Technology and Research. 第3回日中電子材料シンポジウム. 2013
  20. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors. International Conference on Diamond and Carbon Materials. 2013
  21. IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen a. International Conference on Diamond and Carbon Materials 2013. 2013
  22. TERAJI, Tokuyuki, TANIGUCHI, Takashi, WATANABE, Kenji, KOIZUMI, Satoshi, J. Isoya, KOIDE, Yasuo. Effective use of source gas for isotpically-enriched diamond growth. ICDCM2013. 2013
  23. TERAJI, Tokuyuki, FIORI, Jean-Yves Alexandre, KOIDE, Yasuo. Inhomogeneous Schottky barrier height at metal/diamond interfaces. ICDCM2013. 2013
  24. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Multilevel intermediate-band solar cells based on III-Nitrides. 10th International Conference on Nitride Semiconductors. 2013
  25. IMURA, Masataka, KOIDE, Yasuo, NAKAYAMA, Yoshiko, TAKEGUCHI, Masaki, TUMURAYA Takao, MIYAZAKI, Tsuyoshi, MIZUTANI Shunsuke, TABATA Takuya, NAKAGAWA Souta, YAMAGUCHI Masashi, AMANO Hiroshi. Atomic Structures and Formation Mechanism of Stacking Faults in In0.20Ga0.80N Nanowires Evaluated by Atomic Resolution STEM. International Conference on Nitride Semiconductors 2013. 2013
  26. KOIDE, Yasuo. Challenge to Development of Diamond Power Devices for Saving Energy. PRICM8. 2013
  27. 小出 康夫, 廖 梅勇, 井村 将隆. AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ. 応用物理学会応用電子物性分科会研究例会. 2013
  28. IMURA, Masataka, KOIDE, Yasuo, NAKAYAMA, Yoshiko, TAKEGUCHI, Masaki, TUMURAYA Takao, MIYAZAKI, Tsuyoshi, MIZUTANI Shunsuke, TABATA Takuya, NAKAGAWA Souta, YAMAGUCHI Masashi, AMANO Hiroshi. Atomic structures of InGaN nanowires investigated by STEM with Cs-corrected system . 第32回電子材料シンポジウム. 2013
  29. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors. NIMS Conference 2013. 2013
  30. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors. 2013 NIMS conference. 2013
  31. KOIDE, Yasuo. Challenge to Development of Diamond Power Devices for Energy Saving. The first French-Japanese Workshop &quot;Diamond power devices&q. 2013
  32. KOIDE, Yasuo. Challenge to Develop Diamond Electronic and Photonic Devices for Energy Saving. EM-NANO 2013. 2013
  33. TERAJI, Tokuyuki, KOIDE, Yasuo. p-type diamond Schottky interfaces &#8210; Current transport mechanisms and thermal stability &#8210;. ISCSI VI. 2013
  34. TERAJI, Tokuyuki, TANIGUCHI, Takashi, KOIZUMI, Satoshi, KOIDE, Yasuo, Junichi Isoya. Effective use of source gas for 12C enriched diamond growth. ISCSI VI. 2013
  35. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes. 2013 New Diamond and Nanocarbon. 2013
  36. LIU, Jiangwei, Shaoheng Cheng, LIAO, Meiyong, IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, KOIDE, Yasuo. Interfacial Electronic Band Alignment of Ta2O5/Hydrogen-terminated diamond Heterojunction Determined by X-ray Photoelectron Spec. 2013 New Diamond and Nanocarbon . 2013
  37. LIAO, Meiyong, Masaya Toda, SANG, Liwen, IMURA, Masataka, HISHITA, Shunichi, IKEDA, Naoki, Shuji Tanaka, KOIDE, Yasuo. Scaling single crystal diamond MEMS/NEMS resonators. 2013 New Diamond and Nanocarbon (NDNC2013) conference. 2013
  38. 廖 梅勇, 戸田 雅也, サン リウエン, 井村 将隆, 池田 直樹, 田中秀治, 小出 康夫. 単結晶ダイヤモンド機械共振特性の研究. 2013年 第60回応用物理学会春季学術講演会. 2013
  39. 井村 将隆, 小出 康夫, 中山 佳子, 竹口 雅樹, 水谷駿介, 田畑拓也, 中川慎太, 山口雅史, 天野浩. InGaNナノワイヤ中の積層欠陥の原子構造と生成メカニズム. 第60回応用物理学会春季学術講演会. 2013
  40. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. 原子層堆積法による水素終端ダイヤモンド上にAl2O3とHfO2の電子構造. 第60回応用物理学会春季学術講演会. 2013
  41. 寺地 徳之, 谷口 尚, 小泉 聡, 小出 康夫, 磯谷 順一. 同位体濃縮ダイヤモンド合成のためのメタンガス高効率利用. 第60回 応用物理学関係連合講演会. 2013
  42. 井村 将隆, 津田 俊輔, 長田 貴弘, 武田 寛之, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 山口智広, 金子昌充, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMgドープIn0.70Ga0.30Nの 表面-バルク電子状態評価. 第60回応用物理学会春季学術講演会. 2013
  43. 小出 康夫, 小寺秀俊. 微細加工プラットフォーム概要. 日本化学会第93春季年会(2013) 「特別企画」シンポジウム. 2013
  44. 小出 康夫. NIMS微細加工プラットフォームの紹介. 微細加工ナノプラットフォームコンソーシアムワークショップ. 2013
  45. 井村 将隆, 小出 康夫. 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ. SATテクノロジー・ショーケース2013. 2013
2012
  1. 廖 梅勇, サン リウエン, 菱田 俊一, 池田 直樹, 井村 将隆, 小泉 聡, 小出 康夫. ダイヤモンド・ナノマシンスイッチの創製. 第25回ダイヤモンドシンポジウム. 2012
  2. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 廖 梅勇, 小出 康夫, 天野浩, 松本翼, 山崎聡. 原子層堆積法により成膜したアルミナゲート 表面チャネルダイヤモンドFETの特性評価 . 第26回ダイヤモンドフォーラム. 2012
  3. 小出 康夫. ダイヤモンド半導体のパワーデバイス展開. 第53回真空に関する連合講演会. 2012
  4. KOIDE, Yasuo. Challenge to Development of Diamond Power Devices for Energy Saving. International Conference on Emerging Advanced Nanomaterials. 2012
  5. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, KOIDE, Yasuo, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, Kaneko Masamitsu, Kaneko Masamitsu, Yamaguchi Tomohiro, Uematsu Nao, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structure of Mg-doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy . International Workshop on Nitride Semiconductors 2012. 2012
  6. IMURA, Masataka, Ujjal Gautam, NAKAJIMA, Kiyomi, KOIDE, Yasuo, Amano Hiroshi, Tsuda Kenji. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along &lt;1120&gt; and &lt;1100&gt; Zone-Axes of AlN for Polarity Determination. International Workshop on Nitride Semiconductors 2012. 2012
  7. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Photo-electricity energy conversion devices based on InGaN film. International Workshop on Nitride Semiconductors 2012(IWN2012). 2012
  8. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Photoelectrical energy-conversion devices based on III-Nitride semiconductors. IWN 2012. 2012
  9. 小出 康夫. 微細加工ナノプラットフォーム観察と計測装置群. ナノテクノロジープラットフォームシンポジウム. 2012
  10. 小出 康夫. NIMS共用機器・設備の紹介・説明. つくばの公的研究機関・大学が保有する先端機器を活用しよう!. 2012
  11. TERAJI, Tokuyuki, TANIGUCHI, Takashi, KOIZUMI, Satoshi, WATANABE, Kenji, KOIDE, Yasuo, Junichi Isoya. Isotopically-enriched 12C diamond films. IUMRS-ICEM 2012. 2012
  12. LIAO, Meiyong, TERAJI, Tokuyuki, SANG, Liwen, IMURA, Masataka, KOIDE, Yasuo. Strategies to develop single crystal diamond deep-ultraviolet detectors. IUMRS-International Conference on Electronic Materials 2012. 2012
  13. LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Photoeletrical energy-conversion devices based on III-Nitride semiconductors. IUMRS Int'l Conf. on Electronic Materials (IUMRS-ICEM2012). 2012
  14. CHENG, Shaoheng, LIAO, Meiyong, KOIDE, Yasuo. High dielectric constant oxide on diamond for high power devices. IUMRS-International Conference on Electronic Materials 2012. 2012
  15. IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Diamond-FET using AlN/diamond heterojunction . IUMRS-International Conference on Electronic Material 2012. 2012
  16. KOIDE, Yasuo, G.C.Chen, LIAO, Meiyong, IMURA, Masataka. Electrical property of high-k insulator/p-diamond diodes for electric field controlling. IUMRS-ICEM2012. 2012
  17. TERAJI, Tokuyuki, KOIDE, Yasuo. p-type diamond Schottky diodes -current transport mechanisms and defects. IUMRS-ICEM 2012. 2012
  18. IMURA, Masataka, HAYAKAWA, Ryoma, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIAO, Meiyong, KOIDE, Yasuo, AMANO Hiroshi, Matsumoto Tsubasa , Yamasaki Satoshi. Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere. IUMRS-International Conference on Electronic Material 2012. 2012
  19. 廖 梅勇, サン リウエン, 池田 直樹, 井村 将隆, 小出 康夫. 単結晶ダイヤモンド・マイクロマシニングの研究. 2012年 秋季 第73回応用物理学会学術講演会. 2012
  20. 小出 康夫, G.C.Chen, 廖 梅勇, 井村 将隆. 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合. 第73回応用物理学会学術講演会. 2012
  21. サン リウエン, 廖 梅勇, 池田 直樹, 小出 康夫, 角谷 正友. 極薄AIN挿入によるInGaN太陽電池特性の向上. 第73回応用物理学会学術講演会. 2012
  22. サン リウエン, 廖 梅勇, 池田 直樹, 角谷 正友, 小出 康夫. 極薄AlN挿入によるInGaN太陽電池特性の向上. 2012年 秋季 第73回応用物理学会学術講演会. 2012
  23. 井村 将隆, 津田 俊輔, 長田 貴弘, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 金子昌充, 金子昌充, 山口智広, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたInNの表面電子状態評価. 第72回応用応用物理学会学術講演会. 2012
  24. LIAO, Meiyong, HISHITA, Shunichi, KOIZUMI, Satoshi, TERAJI, Tokuyuki, SANG, Liwen, IMURA, Masataka, KOIDE, Yasuo. Single crystal diamond MEMS/NEMS. International Conference on Diamond and Carbon Materials. 2012
  25. IMURA, Masataka, HAYAKAWA, Ryoma, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIAO, Meiyong, KOIDE, Yasuo, AMANO Hiroshi. Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure . International Conference on Diamond and Carbon Materials . 2012
  26. TERAJI, Tokuyuki, LIAO, Meiyong, KOIDE, Yasuo. Thermally-stable tungsten carbide/p-diamond Schottky diodes. ICDCM 2012. 2012
  27. TERAJI, Tokuyuki, TANIGUCHI, Takashi, KOIZUMI, Satoshi, WATANABE, Kenji, KOIDE, Yasuo, Junichi Isoya. Isotopically-enriched 12C diamond films grown by chemical vapour deposition. ICDCM 2012. 2012
  28. KOIDE, Yasuo, G.C.Chen, LIAO, Meiyong, IMURA, Masataka. High-k insulator/p-diamond structure for gate voltage controlling. International Conference on Diamond and Carbon Mateirals (ICDCM). 2012
  29. KOIDE, Yasuo. Challenge for Development of Diamond Electronic and Optical Devices for Energy Saving. Asia Nano Forum Summit 2012. 2012
  30. 井村 将隆, 津田 俊輔, 長田 貴弘, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 金子昌充, 金子昌充, 山口智広, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMgドープInNの表面およびバルク電子状態評価. 第31回電子材料シンポジウム. 2012
  31. 井村 将隆, 小出 康夫, 中島 清美, 天野浩, 津田健治. TEM-CBED法を用いたAlNの極性決定評価. 第31回電子材料シンポジウム. 2012
  32. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 廖 梅勇, 小出 康夫, 天野浩, 松本翼, 山崎聡. pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ. 第31回電子材料シンポジウム. 2012
  33. KOIDE, Yasuo, LIAO, Meiyong, IMURA, Masataka, G. C. Chen. Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling . New Diamond and Nano Carbons Conference 2012. 2012
  34. LIAO, Meiyong, SANG, Liwen, IMURA, Masataka, IKEDA, Naoki, HISHITA, Shunichi, KOIDE, Yasuo. Single crystal diamond MEMS/NEMS: surface machining, devices, and simulation. New Diamond and Nano Carbons 2012. 2012
  35. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Photoelectrical energy-conversion devices based on III-Nitrde semiconductors. Nano Thailand 2012 conference. 2012
  36. LIAO, Meiyong, HISHITA, Shunichi, KOIZUMI, Satoshi, IMURA, Masataka, KOIDE, Yasuo. Diamond MEMS. Nanothailand 2012. 2012
  37. 廖 梅勇, 菱田 俊一, 井村 将隆, 小泉 聡, 小出 康夫. ダイヤモンド・ナノマシンスイッチ:シミュレーションと実験の比較. 2012年春季 第59回 応用物理学関係連合講演会. 2012
  38. 小出 康夫. ダイヤモンドの光伝導におけるアクセプタ/ドナー相互作用. 第59回応用物理学関係連合講演会. 2012
  39. IMURA, Masataka, HAYAKAWA, Ryoma, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIAO, Meiyong, KOIDE, Yasuo, Hiroshi Amano. Field Effect Transistors by AlN/Diamond Heterostructure - past & future -. Hasselt Diamond Workshop 2012 SBDD XVII. 2012
2011
  1. 廖 梅勇, 寺地 徳之, 井村 将隆, 小出 康夫. 種々ダイヤモンド薄膜を用いたダイヤモンド紫外線センサーの光応答特性. 第25回ダイヤモンドシンポジウム. 2011
  2. 廖 梅勇, 菱田 俊一, 小泉 聡, 小出 康夫. ダイヤモンド・ナノマシンスイッチの創製. 第25回ダイヤモンドシンポジウム. 2011
  3. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 廖 梅勇, 小出 康夫, 天野浩. AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発. 第25回ダイヤモンドシンポジウム. 2011
  4. 廖 梅勇, 小出 康夫. Simulation of single crystal diamond MEMS switch. COMSOL カンファレンス東京 2011. 2011
  5. 廖 梅勇, 菱田 俊一, 井村 将隆, 小泉 聡, 小出 康夫. ダイヤモンド・ナノマシンスイッチ. 日本金属学会2011年秋期(第149回)講演大会. 2011
  6. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 廖 梅勇, 小出 康夫, 天野浩. AlN/Diamondヘテロ接合型電界効果トランジスタの開発. 2011年日本金属学会秋期大会. 2011
  7. KOIDE, Yasuo. Challenge for Development of Diamond Electronic and Optical Devices. BIT. 2011
  8. KOIDE, Yasuo. Deep-Dopant Effect for Diamond Ultraviolet Sensor. Carbon-Based Nano-Materials and Devices, ECI Conference Seires. 2011
  9. LIAO, Meiyong, HISHITA, Shunichi, KOIDE, Yasuo. Low-power consumption diamond nanoelectromechnaical switch. IUPAC 7th International Conference on Novel Materials. 2011
  10. Mohamed Boutchich, Jos&#233; Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo, Jean-Paul Kleider. Amorphous silicon diamond based heterojunctions with high recti&#64257;cation ratio. Amorphous and nanocrystalline semiconductors 24. 2011
  11. 小出 康夫, 廖 梅勇, 井村 将隆. ダイヤモンドのデバイス展開―紫外線センサ・ヘテロ接合トランジスタ・MEMSスイッチ. 日本金属学会分科会シンポジウム . 2011
  12. TERAJI, Tokuyuki, FIORI, Jean-Yves Alexandre, Norihiko KIRITANI, Satoshi TANIMOTO, Shinya Ohmagari, KOIDE, Yasuo. Imperfections for diamond Schottky diodes. DIAMOND 2011. 2011
  13. IMURA, Masataka, HAYAKAWA, Ryoma, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIAO, Meiyong, KOIDE, Yasuo, AMANO Hiroshi. Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure. 22nd European Conference on Diamond, Diamond-like Materials, Car. 2011
  14. 廖 梅勇, 菱田 俊一, 井村 将隆, 小泉 聡, 小出 康夫. 高性能単結晶ダイヤモンド・ナノマシンスイッチ. 2011年秋季 第72回 応用物理学会学術講演会. 2011
  15. 寺地 徳之, 小出 康夫. 炭化タングステン/p 型ダイヤモンドショットキーダイオードの漏れ電流特性. 第72回 応用物理学会学術講演会. 2011
  16. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 廖 梅勇, 小出 康夫, 天野浩. AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ. 第72回応用応用物理学会学術講演会. 2011
  17. 渡辺 英一郎, 津谷 大樹, 小出 康夫. グラフェン素子のコンタクト抵抗評価. 平成23年度飯綱・サイエンスサマー道場. 2011
  18. 小出 康夫. 高感度ダイヤモンド深紫外線センサとセンシング機構. 第121回微小光学研究会. 2011
  19. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Effect of a super-thin AlN interlayer on the improvement of InGaN-based solar cell performance. 5th Asia-Pacific Workshop on Widegap Semiconductors. 2011
  20. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. High-performance metal-semiconductor-metal photodetectors using CaF2 as the insulator. 5th Asia-Pacific Workshop on Widegap Semiconductors. 2011
  21. Zhouwen Rong, LIAO, Meiyong, KOIDE, Yasuo, IMURA, Masataka. Modeling and simulation of single crystal diamond NEMS switch. International Conference on New Diamond and Nano Cabons 2011. 2011
  22. サン リウエン, 廖 梅勇, 池田 直樹, 小出 康夫, 角谷 正友. 極薄AlN 挿入によるInGaN 太陽電池特性の向上. 2011年春季 第58回 応用物理学関係連合講演会. 2011
  23. 廖 梅勇, 菱田 俊一, 小泉 聡, 小出 康夫. 単結晶ダイヤモンド・ナノマシンスイッチの開発. 2011年春季 第58回 応用物理学関係連合講演会 . 2011
  24. 井村 将隆, 早川 竜馬, 大里 啓孝, 渡辺 英一郎, 廖 梅勇, 天野 浩, 小出 康夫. AlN/ダイヤモンドヘテロ構造トランジスタ. 2011年春季 第58回 応用物理学関係連合講演会. 2011
  25. 寺地 徳之, フィオーリ ジヨーンイヴ アレクサンドレ, 桐谷範彦, 谷本 智, 小出 康夫. 炭化タングステン/p型ダイヤモンドショットキーダイオードの逆方向特性. 第58回 応用物理学関係連合講演会. 2011
  26. 小出 康夫. 低炭素化材料設計・創製ハブ拠点の整備構想. 4大学ナノナノ・マイクロファブリケーションコンソーシアム. 2011
  27. IMURA, Masataka, HAYAKAWA, Ryoma, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIAO, Meiyong, Hiroshi Amano, KOIDE, Yasuo. Demonstration of AlN/Diamond Heterostructure Field Effect Transistors. MANA International Symposium 2011 . 2011
  28. フィオーリ ジヨーンイヴ アレクサンドレ, 桐谷, 谷本, 大曲, 小出 康夫. Diamond Schottky interfaces with low barrier height patches. SBDD 2011. 2011
  29. 小出 康夫. NIMS ハブ拠点とダイヤモンド研究支援. 超低損失電力ダイヤモンドトランジスタの開発拠点. 2011
  30. 寺地 徳之, 小出 康夫. ダイヤモンドショットキーコンタクト. ダイヤモンドパワーデバイス研究交流会. 2011
  31. WATANABE, Eiichiro, TSUYA, Daiju, KOIDE, Yasuo. Contact Resistance in Graphene-Based Devices. Frontiers in Nanoscale Science and Technology Workshop 2011. 2011
2010
  1. 渡辺 英一郎, 津谷 大樹, 小出 康夫. 種々酸化膜/シリコン基板上に作製したグラフェンの電気伝導特性. 第24回ダイヤモンドシンポジウム. 2010
  2. 寺地 徳之, フィオーリ ジヨーンイヴ アレクサンドレ, 桐谷範彦, 谷本 智, 小出 康夫. 炭化タングステン/p型ダイヤモンドショットキーダイオードの耐圧特性. 第24回ダイヤモンドシンポジウム. 2010
  3. 渡辺 英一郎, 津谷 大樹, 小出 康夫. 伝送線路(TLM)法による多端子グラフェンデバイスのコンタクト抵抗評価. 第24回ダイヤモンドシンポジウム. 2010
  4. 廖 梅勇, 井村 将隆, 小出 康夫. マイクロマシン応力センサに向けた単結晶ダイヤモンド上のPZT薄膜成長. 第24回ダイヤモンドシンポジウム. 2010
  5. 小出 康夫. ダイヤモンドを用いた深紫外線センサ. 2010年日本学術振興会第125委員会第210回研究会. 2010
  6. 寺地 徳之, フィオーリ ジヨーンイヴ アレクサンドレ, 桐谷範彦, 谷本 智, 小出 康夫. 低ショットキー障壁パッチがもたらすダイヤモンドショットキーダイオード逆方向電流の増加. 第19回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会. 2010
  7. 廖 梅勇, 井村 将隆, 小出 康夫. フッ化カルシウム緩衝層を用いた単結晶ダイヤモンド上PZT薄膜. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  8. 小出 康夫. ここまで来ているダイヤモンド電子デバイス&#8722;はじめに−. 2010年秋季 第71回 応用物理学学術講演会. 2010
  9. Daisuke INOUE, Tsuyoshi NOMURA, Hisayoshi FUJIKAWA, K SATO, IKEDA, Naoki, TSUYA, Daiju, SUGIMOTO, Yoshimasa, KOIDE, Yasuo, ASAKAWA, Kiyoshi. Optical Properties of RGB Color Filter Comprising Aluminum Film with Surface Plasmon Enhanced Transmission through Sub-Wavelengt. THE INTERNATIONAL CONFERENCE ON NANOPHOTONICS 2010. 2010
  10. LIAO, Meiyong, Jose Alvarez, KOIDE, Yasuo, IMURA, Masataka, Jean-paul Kleider. Deep-ultraviolet detector using submicron thick diamond epi-layer: principle, device design, and application. The International Conference on Nanophotonics 2010. 2010
  11. LIAO, Meiyong, IMURA, Masataka, NAKAJIMA, Kiyomi, KOIDE, Yasuo, Yasuhito Gotoh , Hiroshi Tsuji. Integration of piezoelectric Pb(Zr0.52Ti0.48)O3 on single crystal diamond for MEMS pressure sensor . The 4th International Conference on New Diamond and Nano Carbon . 2010
  12. LIAO, Meiyong, WANG, Xi, TERAJI, Tokuyuki, KOIZUMI, Satoshi, KOIDE, Yasuo. Photocurrent gain in intrinsic diamond detectors with non-Ohmic contacts. The 4th International Conference on New Diamond and Nano Carbon . 2010
  13. IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Hiroshi Amano. Growth of AlN on (001), (110), and (111) diamond substrates . The 4th International Conference on New Diamond and Nano Carbons. 2010
  14. KOIDE, Yasuo. Deep-Dopant Effect for Diamond Electronic and Photonic Devices. NDNC2010. 2010
  15. 小出 康夫, 廖 梅勇, 井村 将隆, Jose, Jean-Paul. ダイヤモンド紫外線センサにおける永続的光伝導及び光伝導利得の機構―II―. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  16. 井村 将隆, 中島 清美, 廖 梅勇, 小出 康夫, 天野 浩. 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  17. 寺地 徳之, 小出 康夫. ダイヤモンドモットダイオード. 第57回 応用物理学関係連合講演会. 2010
  18. 廖 梅勇, 中島 清美, 井村 将隆, 小出 康夫. 単結晶ダイヤモンド上の強誘電体PZT薄膜の堆積. 2010年春季 第57回 応用物理学関係連合講演会 . 2010
  19. 廖 梅勇, 井村 将隆, 小出 康夫. ダイヤモンド/PZT接合を用いた金属‐強誘電体‐絶縁体‐半導体キャパシタの作製及びデバイス特性. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  20. IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Hiroshi Amano. Microstructure of AlN layer on (001) and (111) diamond substrates by metalorganic vapor phase epitaxy. MANA International Symposium 2010. 2010
  21. KOIDE, Yasuo, LIAO, Meiyong, IMURA, Masataka, Jose Alvarez, J-P. Kleider. Diamond UV detectors and sensing mechanism. SBDD 2010. 2010
  22. TERAJI, Tokuyuki, KOIDE, Yasuo, Toshimichi Ito. Stability of p-type diamond Schottky diode in high-temperature operation. SBDD 2010. 2010
2009
  1. 寺地 徳之, 小出 康夫, 伊藤利道. Au/p-diamondショットキー界面のキャリヤ輸送機構. 第18回SiC及び関連ワイドギャップ半導体講演会. 2009
  2. LIAO, Meiyong, NAKAJIMA, Kiyomi, IMURA, Masataka, KOIDE, Yasuo. Integration of Pb (Ti0.52Zr0.48)O3 on single crystal diamond. 2009 MRS Fall Meeting. 2009
  3. 寺地 徳之, ガリーノ ユーリ, 小出 康夫, 伊藤利道. 真空紫外線/オゾン処理を用いて形成したp型ダイヤモンドショットキーダイオード. 第23回ダイヤモンドシンポジウム. 2009
  4. 小出 康夫, 廖 梅勇, 井村 将隆, ホセアルバレッツ. ダイヤモンド紫外線センサにおける光伝導利得および永続的光伝導のメカニズム. 第23回ダイヤモンドシンポジウム. 2009
  5. 廖 梅勇, 寺地 徳之, 小泉 聡, 小出 康夫. 非オーミック電極型ダイヤモンド検出器で発現する光電流利得. 第23回ダイヤモンドシンポジウム. 2009
  6. LIAO, Meiyong, Jose Alvarez, IMURA, Masataka, KOIDE, Yasuo. ENGINEERING THE PHOTORESPONSE PROPERTIES OF DIAMOND DEEP-ULTRAVIOLET DETECTORS. International Symposium on Novel Materials and Their Synthesis. 2009
  7. 小出 康夫. ナノ加工技術を用いた光学フィルタ及び紫外線センサの開発. 平成21年度 第2回 SAITEC技術セミナー. 2009
  8. 小出 康夫, 廖 梅勇, 井村 将隆, J. Alvarez. ダイヤモンド紫外線センサにおける永続的光伝導及び光伝導利得の機構―I―. 日本金属学会2009年秋期大会. 2009
  9. 小出 康夫, 廖 梅勇, 井村 将隆, J. Alvarez. ダイヤモンド紫外線センサにおける永続的光伝導及び光伝導利得の機構―II―. 日本金属学会2009年秋期大会. 2009
  10. TERAJI, Tokuyuki, GARINO, Yiuri, KOIDE, Yasuo, Toshimichi Ito. Low reverse-current diamond Schottky diodes prepared by VUV/ozone treatment. Diamond 2009. 2009
  11. LIAO, Meiyong, WANG, Xi, TERAJI, Tokuyuki, IMURA, Masataka, KOIDE, Yasuo. Photocurrent gain dependence on deep-ultraviolet intensity in diamond detector. Diamond 2009. 2009
  12. TERAJI, Tokuyuki, GARINO, Yiuri, KOIDE, Yasuo, Toshimichi Ito. Low reverse-current diamond Schottky diodes prepared by VUV/ozone treatment. Diamond 2009. 2009
  13. IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Amano Hiroshi. Growth of AlN on (001) diamond substrate by MOVPE. 第28回電子材料シンポジウム(EMS28). 2009
  14. IKEDA, Naoki, TSUYA, Daiju, SUGIMOTO, Yoshimasa, KOIDE, Yasuo, ASAKAWA, Kiyoshi, Miura Atsushi, Inoue Daisuke, Tsuyoshi. Nomura, Hisayoshi. Fujikawa, Sato Kazuo. Systematic study on surface plasmon-enhanced extra-ordinary optical transmission in an aluminium-film hole-array. PECS VIII. 2009
  15. 寺地 徳之, ガリーノ ユーリ, 小出 康夫, 伊藤 利道. 低漏れ電流p型ダイヤモンド横型ショットキーダイオード. 第56回応用物理学関係連合講演会. 2009
  16. 廖 梅勇, 王 希, 寺地 徳之, 井村 将隆, 小出 康夫. ダイヤモンド・フォトディテクタおける光誘起する光電流利得特性. 2009年春季 第56回応用物理学関係連合講演会. 2009
  17. 小出 康夫, 廖 梅勇, 井村 将隆, J. Alvarez. ダイヤモンド紫外線センサにおける永続的光伝導及び光伝導利得の機構―I―. 2009年春季第56回応用物理学会学術講演会. 2009
  18. 井村 将隆, 中島 清美, 廖 梅勇, 小出 康夫, 天野 浩. MOVPE法によるダイヤモンド基板上の窒化アルミニウムの成長. 2009年春季 第56回応用物理学関係連合講演会. 2009
  19. 寺地 徳之, 小泉 聡, 小出 康夫. p型ボロンドープダイヤモンドへの熱処理を伴わないオーミック電極の形成. 第56回応用物理学関係連合講演会. 2009
  20. KOIDE, Yasuo. Development of diamond deep-UV photosensor for combustion flame. 定質センサ国際会議. 2009
  21. TERAJI, Tokuyuki, GARINO, Yiuri, KOIDE, Yasuo, Toshimichi ITO. Low-leakage p-diamond Schottky diodes with lateral configuration. SBDD 2009. 2009
  22. KOIDE, Yasuo. Diamond Ultra Violet Sensor. 早稲田大学アンビエントGCOE研究交流会. 2009
  23. IMURA, Masataka, KOIDE, Yasuo, LIAO, Meiyong, Jose Alvarez. Deep-ultraviolet Diamond-based Photodetector for high-power excimer lamp. MANA International Symposium 2009. 2009
  24. LIAO, Meiyong, FANG, Xiaosheng, IKEDA, Naoki, SUGIMOTO, Yoshimasa, KOIDE, Yasuo. Fabrication of Diamond Field Emitter Coated with Tungsten Carbide. The 4th IEEE-NEMS International Conference. 2009
2008
  1. 寺地 徳之, ガリーノ ユーリ, 小泉 聡, 小出 康夫, 伊藤利道. p型ホモエピタキシャルダイヤモンド薄膜に形成した横型ショットキーダイオード. 第17回シリコンカーバイド及び関連ワイドギャップ半導体研究会. 2008
  2. 寺地 徳之, 小泉 聡, 小出 康夫. p型ホウ素ドープダイヤモンドへの室温オーミックコンタクトの形成. 第22回ダイヤモンドシンポジウム. 2008
  3. 寺地 徳之, ガリーノ ユーリ, 小出 康夫, 伊藤利道. ダイヤモンドショットキーダイオードの界面輸送機構. 第22回ダイヤモンドシンポジウム. 2008
  4. ガリーノ ユーリ, 寺地 徳之, 小泉 聡, 小出 康夫, Toshimichi ITO . Charging behavior in reverse characteristics of diamond Schottky diodes. 第22回ダイヤモンドシンポジウム. 2008
  5. 井村 将隆, 廖 梅勇, 小出 康夫, Jose Alvarez. ダイヤモンド基板によるショットキーフォトダイオード特性への影響. 第22回 ダイヤモンドシンポジウム. 2008
  6. 廖 梅勇, Jose Alvarez, 井村 将隆, 小出 康夫. ダイヤモンドフォトディテクタの永続的光伝導のクエンチング. 第22回ダイヤモンドシンポジウム. 2008
  7. KOIDE, Yasuo, LIAO, Meiyong, IMURA, Masataka, ALVAREZ, Jose Antonio. Diamond deep-UV photodetector with high sensitivity and thermal stability. Diamond 2008. 2008
  8. 寺地 徳之, 小泉 聡, 伊藤利道, 小出 康夫. ホウ素ドープp型ダイヤモンドのショットキー障壁高さの温度依存性. 第69回応用物理学会学術講演会. 2008
  9. ガリーノ ユーリ, 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. Reverse current transient behavior in diamond lateral Schottky diodes. 第69回応用物理学会学術講演会. 2008
  10. 廖 梅勇, Jose Alvarez, 井村 将隆, Jean-Paul Kleider, 小出 康夫. ダイヤモンド・フォトディテクタおける正及び負の永続的光伝導. 2008年秋季 第69回応用物理学会学術講演会. 2008
  11. 井村 将隆, 廖 梅勇, 小出 康夫, Jose Alvarez. 導電性p+-ダイヤモンド基板を用いたショットキーフォトダイオード. 2008年秋季 第69回応用物理学会学術講演会 . 2008
  12. IMURA, Masataka, LIAO, Meiyong, Jose Alvarez, KOIDE, Yasuo. Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates. EMS27. 2008
  13. KOIDE, Yasuo, LIAO, Meiyong, ALVAREZ, Jose Antonio, IMURA, Masataka, I. Furufusa, K. Sueishi. Development of flame sensor using diamond visible-blind ultraviolet photodiode. NDNC 2008. 2008
  14. IMURA, Masataka, KOIDE, Yasuo, LIAO, Meiyong, Jose Alvarez. Vertical-type Schottky-Barrier Photodiode using p- / p+-Diamond Substrates. 2nd International Conference on New Diamond and Nano Carbons. 2008
  15. 小出 康夫, 廖 梅勇, アルバレッツ ホセ アントニオ, 井村 将隆. Thermally stable solar-blind diamond deep-UV photodetector. The 6th MPI-MF & NIMS Workshop. 2008
  16. LIAO, Meiyong, ALVAREZ, Jose Antonio, KOIDE, Yasuo. Photoconductive Gain in Wide-badgap diamond Photodetector. 6th MPI-MF & NIMS . 2008
  17. 小出 康夫. ダイヤモンドを用いた太陽光ブラインド紫外センサの開発. 電気化学会第75回大会. 2008
  18. 廖 梅勇, 小出 康夫. Thermally stimulated current from boron doped diamond epilayer on Ib diamond substrate. 2008年春季第55回応用物理学会学術講演会. 2008
  19. 井村 将隆, 廖 梅勇, J. Alvarez, 小出 康夫. 導電性p+-ダイヤモンド基板を用いた縦型ショットキーフォトダイオード. 2008年春季第55回応用物理学会学術講演会. 2008
  20. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. ホウ素ドープp型ダイヤモンドショットキーダイオードの障壁高さ. 第55回応用物理学関係連合講演会. 2008
  21. 廖 梅勇, J. Alvarez, 小出 康夫. Thermally stimulated current from boron doped diamond epilayer on Ib diamond substrate. 2008年(平成20年)春季第55回応用物理学関係連合講演会. 2008
  22. 桐谷範彦, 谷本 智, 寺地 徳之, 小泉 聡, 小出 康夫. メサ構造単結晶ダイヤモンド縦型ショットキーバリアダイオードの作製. 2008年春季応用物理学会学術講演会. 2008
2007
  1. 小出 康夫, 廖 梅勇, ジョセアルバレッツ. 金属/ダイヤモンド界面と深紫外線センサ素子. 電子材料研究会. 2007
  2. 桐谷範彦, 谷本 智, 寺地 徳之, 小泉 聡, 小出 康夫. 単結晶ダイヤモンド縦型ショットキーバリアダイオードの電気特性. 第21回ニューダイヤモンドフォーラム. 2007
  3. 廖 梅勇, Jose Alvarez, 井村 将隆, 小出 康夫. 単結晶ダイヤモンド薄膜を用いた深紫外線フォトディテクター. 第21回ニューダイヤモンドフォーラム. 2007
  4. 廖 梅勇, 井村 将隆, 小出 康夫. 単結晶ダイヤモンド薄膜を用いた深紫外線フォトディテクター. 第21回ダイヤモンドシンポジウム. 2007
  5. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. 低濃度p型ホモエピタキシャルダイヤモンドのショットキーダイオード. 第21回ダイヤモンドシンポジウム. 2007
  6. 小出 康夫. 太陽光ブラインド型ダイヤモンド紫外線センサ. 日本金属学会2007年秋期大会. 2007
  7. KOIDE, Yasuo, LIAO, Meiyong, J. Alvarez. Comparison of photoresponse properties for p-diamond deep-ultraviolet photodetectors with various device structures. Diamond 2007. 2007
  8. 廖 梅勇, アルバレッツ , 小出 康夫. サブミクロン金属―半導体―金属接合型ダイヤモンド深紫外線フォトディテクター. 2007年秋季 第68回応用物理学会学術講演会. 2007
  9. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. 低濃度p型ダイヤモンド薄膜に形成した横型ショットキーダイオード. 第68回応用物理学会学術講演会. 2007
  10. LIAO, Meiyong, J. Alvarez, IMURA, Masataka, KOIDE, Yasuo. Diamond Schottky photodiode with interdigitated finger geometry. EMS26. 2007
  11. LIAO, Meiyong, Jose Alvarez, KOIDE, Yasuo. High responsitivity submicron metal-semiconductor-metal deep ultraviolet diamond detector. ChinaNANO2007 International. 2007
  12. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. Electric field breakdown of lateral Schottky diodes of diamond. NDNC 2007. 2007
  13. LIAO, Meiyong, Jose Alvarez, KOIDE, Yasuo. Single Schottky-barrier diamond photodiode with interdigitated electrodes. New Diamond and New Carbon 2007. 2007
  14. LIAO, Meiyong, J. Alvarez, KOIDE, Yasuo. Single Schottky-barrier diamond photodiode with interdigitated electrodes. NDNC2007. 2007
  15. J. Alvarez, LIAO, Meiyong, KOIDE, Yasuo, J. P. Kleider. Photoelectrical properties of hydrogen terminated diamond exposed to ArF excimer laser pulses. NDNC2007. 2007
  16. 廖 梅勇, 小出 康夫. くし形電極を持つ太陽光ブラインドダイヤモンド深紫外線ショットキー型フォトダイオード. 2007年秋季 第54回応用物理学会学術講演会. 2007
  17. 廖 梅勇, 小出 康夫. 高性能金属―半導体―金属接合型ダイヤモンド深紫外線フォトダイオード. 2007年秋季 第54回応用物理学会学術講演会. 2007
  18. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. ダイヤモンド薄膜上に形成したショットキーダイオードの絶縁破壊. 第54回応用物理学関係連合講演会. 2007
2006
  1. KOIDE, Yasuo. Thermally stable solar-blind diamond deep-UV detector. International Workshop on The Application of Diamond. 2006
  2. 小出 康夫, 廖 梅勇, ホセアルバレッツ. ナイトライド電極を用いたダイヤモンド紫外線フォトダイオード. 第20回ダイヤモンドシンポジウム. 2006
  3. 寺地 徳之, 小泉 聡, 小出 康夫, 伊藤利道. 金属/高品質ホモエピタキシャルダイヤモンド薄膜の接触特性. 第20回ダイヤモンドシンポジウム. 2006
  4. 小出 康夫. 熱安定ダイヤモンド紫外線フォトダイオード. ニューダイヤモンドフォーラム平成18年度第2回研究会. 2006
  5. 羽田 肇, 小出 康夫, 石田 章, 任 暁兵. センサ材料の欠陥制御と機能. 日本セラミックス協会 第19回秋季シンポジウム. 2006
  6. 小出 康夫, 廖 梅勇, ホセアルバレッツ. 高融点金属ナイトライド電極を用いたダイヤモンド深紫外線フォトダイオード. 2006年秋期講演大会. 2006
  7. KOIDE, Yasuo, LIAO, Meiyong. Mechanism of optical gain for p-diamond Schottky photodiode. 17th European Conference on Diamond, Diamond 2006. 2006
  8. TERAJI, Tokuyuki, KOIZUMI, Satoshi, KOIDE, Yasuo, H. Miyatake, H. Matsubara, T. Yamamoto, T. Ito. Schottky and Mott diodes formed on high-quality homoepitaxial diamond films. DIAMOND2006. 2006
  9. 小出 康夫, 廖 梅勇, ホセアルバレッツ. 高融点金属ナイトライド電極を用いたダイヤモンド深紫外線フォトダイオード. 2006年秋季 第67回応用物理学会学術講演会. 2006
  10. J. Alvarez, F. Houze, J.P.Kleider, LIAO, Meiyong, KOIDE, Yasuo. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force. 2006 EMRS Spring Meeting -Symposium S. 2006
  11. KOIDE, Yasuo, LIAO, Meiyong, Jose Alvarez. Thermally stable solar-blind diamond UV detector. ICNDST and ADC 2006 Joint Conference. 2006
  12. LIAO, Meiyong, KOIDE, Yasuo. Improved photoresponse properties of diamond Schottky photodiodes by operating at forward biases. ICNDST & ADC Joint Conference. 2006
  13. 小出 康夫. ダイヤモンド半導体光・電子デバイスの展望. 日本金属学会セミナー. 2006
  14. 小出 康夫, 廖 梅勇, ホセアルバレッツ. ダイヤモンド・ショットキー型フォトダイオードの光起電力特性. 2006年春季第53回応用物理学関係連合講演会. 2006
  15. 小出 康夫, 廖 梅勇, ホセアルバレッツ. ダイヤモンド紫外線フォトダイオードの光起電力特性. 2006年春季日本金属学会大会. 2006
  16. KOIDE, Yasuo, LIAO, Meiyong, Jose Alvarez. Thermally Stable Solar-blind Diamond Ultraviolet Photodetector. The 8th KIM-JIM Symposium. 2006
  17. 小出 康夫. 太陽光ブラインド型ダイヤモンド紫外線フォトダイオード. 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会. 2006
  18. Shozo Kono, KOIDE, Yasuo. Surface Conductive Layer of CVD Diamond: Simulation of Surface Energy Band. Int. Symposium on Surface Physics 2006. 2006
2005
  1. 小出 康夫, 廖 梅勇, アルバレッツ ホセ アントニオ. WC基コンタクト材を用いたダイヤモンド・フォトダイオード. 第19回ダイヤモンドシンポジウム. 2005
  2. 小出 康夫, 廖 梅勇, アルバレッツ ホセ アントニオ. カーバイド基電極材を用いたダイヤモンド深紫外光センサーの開発. 日本金属学会2005年度秋期大会. 2005
  3. LIAO, Meiyong, ALVAREZ, Jose Antonio, KOIDE, Yasuo. Diamond photodiode using thermally stable WC Schottky contact for deep ultraviolet light detection. 11th International Conference on Defects, Imaging, and Physics i. 2005
  4. KOIDE, Yasuo, LIAO, Meiyong, ALVAREZ, Jose Antonio. Development of thermally stable, visible-blind diamond photodiode using a tungsten carbide electrode contact. 16th European Conference on Diamond, Diamond-Like Materials, Car. 2005
  5. LIAO, Meiyong, ALVAREZ, Jose Antonio, KOIDE, Yasuo. Schottky-barrier diamond photodiode using thermally stable WC-based contacts. The 2005 International Conference on Solid State Devices and Mat. 2005
  6. 河野省三, 小出 康夫. CVDダイヤモンド表面電気伝導層のエネルギーバンド・シミュレーション. 第66回応用物理学会学術講演会. 2005
  7. 廖 梅勇, アルバレッツ ホセ アントニオ, 小出 康夫. WC基コンタクト材を用いたダイヤモンドフォトダイオード −熱安定性−. 第66回応用物理学会学術講演会. 2005
  8. ALVAREZ, Jose Antonio, LIAO, Meiyong, KOIDE, Yasuo. Bias-dependence of spectral photo-response of metal-semiconductor-metal structures on diamond. The 23rd International Conference on Defects in Semiconductors. 2005
  9. 河野省三, KOIDE, Yasuo. Simulation of band diagram for CVD diamond surface conductivity. The 10th International Conference on New Diamond Science and Tec. 2005
  10. ALVAREZ, Jose Antonio, LIAO, Meiyong, KOIDE, Yasuo. High ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped homoepitaxial diamond.. The 10th International Conference on New Diamond Science and Tec. 2005
  11. 小出 康夫. 太陽光ブラインド型ダイヤモンド紫外線センサーの開発. 特別シンポジウム「横断・融合的学術としての光・光量子科学」. 2005
  12. 廖 梅勇, アルバレッツ ホセ アントニオ, 小出 康夫. 高融点金属カーバイド電極を用いた熱安定・深紫外ダイヤモンドフォトダイオードの開発. 第52回応用物理学関係連合講演会. 2005
  13. 小出 康夫, 小泉 聡, 神田 久生, 鈴木真理子, 吉田博昭, 佐久間尚志, 小野富男, 酒井忠司. リンドープn型ダイヤモンドのアドミタンス・スペクトロスコピー. 第52回応用物理学関係連合講演会. 2005
  14. ALVAREZ, Jose Antonio, LIAO, Meiyong, KOIDE, Yasuo. Metal-Semiconductor-Metal devices on diamond crystals for the UV detection. Workshop 2005 on the future of sensors and sensor systems in Tsu. 2005
  15. LIAO, Meiyong, ALVAREZ, Jose Antonio, KOIDE, Yasuo. Refractory metal carbide as thermally stable Schottky contact of diamond photosensor for deep-ultraviolet detection. Workshop 2005 on the future of sensors and sensor systems in Tsu. 2005
  16. KOIDE, Yasuo. Development of thermally stable, visible-blind deep-UV diamond sensor. Workshop 2005 on the future of sensors and sensor systems in Tsu. 2005
2004
  1. 小出 康夫. ダイヤモンドのドーピング制御. 第33回薄膜・表面物理基礎講座(2004年). 2004
  2. 小出 康夫. n型ダイヤモンド/窒化物半導体へテロ接合における電子濃度の解析. 日本金属学会秋季大会. 2004
  3. 小出 康夫. n型ダイヤモンド/窒化物半導体へテロ接合における電子濃度分布の解析. 2004年秋季第65回応用物理学会学術講演会. 2004
  4. KOIDE, Yasuo. Enhancement of donor ionization in phosphorus-doped n-diamond. 12th International Conferece of Solid Films and Surfaces. 2004
  5. 小出 康夫. n型ダイヤモンドにおけるキャリア補償とディープドーパント効果の解析. 2004年春季第51回応用物理学関係連合講演会. 2004
  6. KOIDE, Yasuo. Depletion layers in Schottky and pn junctions for diamond with deep dopants. The 9th International Conference on New Diamond Science and Tech. 2004

特許 TSV

登録特許
  1. 特許第6519792号 ノーマリーオフ特性を有する水素化ダイヤモンドMISFETの製造方法 (2019)
  2. 特許第5791026号 紫外光検出デバイス及びその製造方法 (2015)
  3. 特許第5747245号 電界効果トランジスタ及びその製造方法 (2015)
  4. 特許第5741888号 光学フィルタ及び表示装置 (2015)
  5. 特許第5697069号 グラフェントランジスタ (2015)
  6. 特許第5626972号 電子機械スイッチ及びその製造方法 (2014)
  7. 特許第5504565号 ダイヤモンド紫外線センサー素子とその製造方法、並びに紫外線センサー装置 (2014)
  8. 特許第5500543号 硫化亜鉛ナノベルト、紫外線検知センサー及びこれらの製造法 (2014)
  9. 特許第5414050号 マイクロスケールの紫外線センサー及びその製造方法 (2013)
  10. 特許第5403519号 単結晶ダイヤモンド・エアギャップ構造体の作製方法 (2013)
  11. 特許第5360766号 ダイヤモンド半導体デバイス (2013)
  12. 特許第5344482号 単結晶ダイヤモンド上にPZT薄膜を形成する方法、PZT薄膜が形成された単結晶ダイヤモンド、及びPZT薄膜が形成された単結晶ダイヤモンドを使用したキャパシタ (2013)
  13. 特許第5158777号 ダイヤモンド半導体整流素子 (2012)
  14. 特許第5019305号 ダイヤモンド紫外線センサー (2012)
  15. 特許第4766364号 ダイヤモンド紫外光トランジスター及びその製造方法 (2011)
  16. 特許第4766363号 ダイヤモンド紫外光センサー素子及びその製造方法 (2011)
  17. 特許第4677634号 ダイヤモンド紫外線センサー素子 (2011)
  18. 特許第4650491号 ダイヤモンド紫外光センサー (2010)
  19. 特許第4123496号 ダイヤモンド紫外光センサー (2008)
公開特許出願
  1. 特開2020105038号 半導体基板、半導体基板の製造方法およびそれを用いた半導体装置 (2020)
  2. 特開2020068291号 電子素子、温度センサー、磁気センサー、振動センサーおよび加速度センサー (2020)
  3. 特開2020021829号 半導体装置および半導体装置の製造方法 (2020)
  4. 特開2020021828号 半導体装置および半導体装置の製造方法 (2020)
  5. 特開2019140547号 ダイヤモンド構造体、ダイヤモンド・カンチレバー、およびダイヤモンド構造体の製造方法 (2019)
  6. 特開2019012827号 窒化ガリウム系の半導体装置及びその製造方法 (2019)
  7. 特開2019012826号 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法 (2019)
  8. 特開2018078254号 ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法 (2018)
  9. 特開2017220512号 トリプルゲートH-ダイヤモンドMISFET及びその製造方法 (2017)
  10. 特開2015149376号 半導体光検出器 (2015)
  11. No: WO2011/102474 単結晶ダイヤモンド・エアギャップ構造体及びその作製方法 (2011)
  12. 特開2011119291号 単結晶ZnSeナノベルトを使用した青色/紫外線光検知デバイス、及びその製造方法 (2011)
  13. No: WO2009/099233 ダイヤモンド紫外線センサー素子とその製造方法、紫外線センサー装置、ダイヤモンド単結晶の処理方法 (2009)
  14. 特開2009023855号 ダイヤモンド表面の改質方法とそれに用いるカバー材。 (2009)
  15. 特開WO2009005134号 ダイヤモンド半導体デバイス (2009)
  16. No: WO2009/005134 ダイヤモンド半導体デバイス (2009)
  17. 特開WO2007015431号 ダイヤモンド紫外光センサー (2007)
  18. 特開WO2006087937号 ダイヤモンド半導体整流素子 (2006)
  19. 特開2006156464号 ダイヤモンド紫外光センサー (2006)
外国特許
  1. No. US20130043213A1 METHOD FOR PRODUCING SINGLE-CRYSTAL DIAMOND MOVABLE STRUCTURE (2013)
  2. No. EP2540877A1 SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF (2013)
  3. No. WO2011102474A1 SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF (2011)
  4. No. EP2169709A4 DIAMOND SEMICONDUCTOR DEVICE (2011)
  5. No. US20110045173A1 DIAMOND UV-SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV-SENSOR UNIT, AND METHOD OF TREATING DIAMOND SINGLE CRYSTAL (2011)
  6. No. US20100289031A1 DIAMOND SEMICONDUCTOR DEVICE (2010)
  7. No. EP2246896A1 DIAMOND UV SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV SENSOR DEVICE, DIAMOND SINGLE CRYSTAL PROCESSING METHOD (2010)
  8. No. US20100090226A1 DIAMOND UV-RAY SENSOR (2010)
  9. No. EP2169709A1 DIAMOND SEMICONDUCTOR DEVICE (2010)
  10. No. WO2009099233A1 DIAMOND UV SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV SENSOR DEVICE, DIAMOND SINGLE CRYSTAL PROCESSING METHOD (2009)
  11. No. US20090134403A1 DIAMOND ULTRAVIOLET SENSOR (2009)
  12. No. WO2009005134A1 DIAMOND SEMICONDUCTOR DEVICE (2009)
  13. No. WO2007015431A1 DIAMOND UV-RAY SENSOR (2007)
  14. No. WO2006087937A1 DIAMOND SEMICONDUCTOR RECTIFIER ELEMENT (2006)
  15. No. WO2006057246A1 DIAMOND ULTRAVIOLET SENSOR (2006)

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