HOME > Profile > KINDOLE, Dickson Zakaria
Research
- Keywords
Oxide and III-V compound semiconductor, THz Cyclotron resonance, Magneto-transport.
Wide band gap semiconductor materials have drawn a lot of attention to the scientist owing to their diverse and promising future application in the power electronic devices, optical devices and photovoltaic industries such as Transistors, LED and Solar cells. The research on new wide band gap semiconductor materials, in particular GaN and GaN 2DEG heterostructure and the improvement of other existing semiconductor materials has been an important field of study in materials science, recently. To merge into a novel level of semiconductor physics and its future applications, it is inevitable to intensively study abnormal electron properties of these new materials especially in an extremely conditions such as in a very low temperature, high magnetic fields and in the Terahertz region.
PublicationsNIMS affiliated publications since 2004.
Research papers
- Masatomo Sumiya, Dickson Kindole, Kiyotaka Fukuda, Shuhei Yashiro, Kanji Takehana, Tohru Honda, Yasutaka Imanaka. Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire. physica status solidi (b). 257 [4] (2020) 1900524 10.1002/pssb.201900524
- Dickson Kindole, Yasutaka Imanaka, Kanji Takehana, Liwen Sang, Masatomo Sumiya. Terahertz Cyclotron Resonance in AlGaN/GaN Heterostructures. Journal of the Korean Physical Society. 74 [2] (2019) 159-163 10.3938/jkps.74.159
Presentations
- 今中 康貴, キンドル ディクソン ザカッリア, 竹端 寛治. 半導体二次元電子系におけるテラヘルツサイクロトロン共鳴. 強磁場コラボラトリーによる強磁場科学の新展開. 2019
- SUMIYA, Masatomo, KINDOLE, Dickson Zakaria, TAKEHANA, Kanji, YASHIRO, Syuhei, 本田徹, IMANAKA, Yasutaka. Electron transport at the interface of AlGaN/InGaN fabricated on AlN template. 日本MRS創立30周年記念シンポジウム. 2019
- 今中 康貴, キンドル ディクソン ザカッリア, 竹端 寛治, 角谷 正友. InGaN二次元電子系の有効質量の評価. 第80回応用物理学会秋季学術講演会. 2019
Society memberships
Japanese Physical Society (JPS)