HOME > Profile > IROKAWA, Yoshihiro
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- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
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Research papers TSV
2023
- Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 112 [1] (2023) 109-117 10.1149/11201.0109ecst
- Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs. ECS Journal of Solid State Science and Technology. 12 [5] (2023) 055007 10.1149/2162-8777/acd1b4 Open Access
2022
- Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide. Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics. ECS Journal of Solid State Science and Technology. 11 [8] (2022) 085010 10.1149/2162-8777/ac8a70 Open Access
2021
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide. Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 39 [6] (2021) 062405 10.1116/6.0001334
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide. (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device. ECS Transactions. (2021) 113-120 10.1149/10404.0113ecst
- Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60 [6] (2021) 068003 10.35848/1347-4065/ac0260
- Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono. Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing. Journal of Vacuum Science & Technology A. 39 [1] (2021) 012401 10.1116/6.0000626
2020
- Yoshihiro Irokawa. Effect of hydrogen on Pt/GaN Schottky diodes. Japanese Journal of Applied Physics. 59 [12] (2020) 120901 10.35848/1347-4065/abc65f
- Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography. RSC Advances. 10 [4] (2020) 1878-1882 10.1039/c9ra08882b Open Access
2019
- NABATAME, Toshihide. Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. (2019) 109-117 10.1149/09204.0109ecs
- Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide. Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors. Japanese Journal of Applied Physics. 58 [10] (2019) 100915 10.7567/1347-4065/ab476a
- Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono. Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. Microelectronic Engineering. 216 (2019) 111040 10.1016/j.mee.2019.111040
- Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489 Open Access
- Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata. Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer. CrystEngComm. 21 [27] (2019) 4036-4041 10.1039/c9ce00463g
- Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography. CrystEngComm. 21 [14] (2019) 2281-2285 10.1039/c8ce01906a
- Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide. 71Ga NMR characterization of an n-doped free-standing gallium nitride wafer. Japanese Journal of Applied Physics. 58 [3] (2019) 031003 10.7567/1347-4065/aafd1a
- Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi. Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing. Semiconductor Science and Technology. 34 [3] (2019) 034001 10.1088/1361-6641/aafdbd
- Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography. Physical Review Applied. 11 [2] (2019) 024072 10.1103/physrevapplied.11.024072 Open Access
2018
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
- Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Characterization of a 4-inch GaN wafer by X-ray diffraction topography. CrystEngComm. 20 [48] (2018) 7761-7765 10.1039/c8ce01440j
- Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide. Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates. Nanoscale Research Letters. 13 [1] (2018) 10.1186/s11671-018-2804-y Open Access
- Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto, Yasuo Koide. Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001). Japanese Journal of Applied Physics. 57 [9] (2018) 098003 10.7567/jjap.57.098003
- Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer. Applied Physics Express. 11 [8] (2018) 081002 10.7567/apex.11.081002 Open Access
- Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer. AIP Advances. 8 [7] (2018) 075318 10.1063/1.5042098 Open Access
- Yanfang Lou, Chulho Song, Yanna Chen, Loku Singgappulige Rosantha Kumara, Natalia Palina, Okkyun Seo, Satoshi Hiroi, Kentaro Kajiwara, Masato Hoshino, Kentaro Uesugi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates. CrystEngComm. 20 [20] (2018) 2861-2867 10.1039/c8ce00229k
2017
- Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, Yasuo Koide. Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001). Japanese Journal of Applied Physics. 56 [12] (2017) 128004 10.7567/jjap.56.128004
- Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, Yasuo Koide. Electron microscopy studies of the intermediate layers at the SiO2/GaN interface. Japanese Journal of Applied Physics. 56 [11] (2017) 110312 10.7567/jjap.56.110312
2016
- Yoshihiro Irokawa, Mamoru Usami. First-principles calculations of semiconducting TiMgN2. Japanese Journal of Applied Physics. 55 [9] (2016) 098001 10.7567/jjap.55.098001
2015
- Yoshihiro Irokawa, Mamoru Usami. First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces. Sensors. 15 [6] (2015) 14757-14765 10.3390/s150614757 Open Access
- Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya. Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures. Philosophical Magazine Letters. 95 [6] (2015) 333-339 10.1080/09500839.2015.1062154
2014
- Y. Irokawa. Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes. ECS Electrochemistry Letters. 3 [11] (2014) B17-B19 10.1149/2.0041411eel
2013
- Yoshihiro Irokawa. Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors. Journal of Applied Physics. 113 [2] (2013) 026104 10.1063/1.4775410
2012
- Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai. Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures. Journal of Applied Physics. 112 [10] (2012) 106103 10.1063/1.4767367
- Y. Irokawa. Hydrogen Interaction with GaN Metal-Insulator-Semiconductor Diodes. Physica B: Condensed Matter. 407 [15] (2012) 2957-2959 10.1016/j.physb.2011.08.054
- Yoshihiro Irokawa, Encarnación A. García Víllora, Kiyoshi Shimamura. Shottky barrier diodes on AlN free-standing substrates. Japanese Journal of Applied Physics. 51 [4R] (2012) 040206 10.7567/jjap.51.040206
2011
- Yoshihiro Irokawa. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces. Sensors. 11 [1] (2011) 674-695 10.3390/s110100674 Open Access
- Y. Nakano, Y. Irokawa, Y. Sumida, S. Yagi, H. Kawai. Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures. Electrochemical and Solid-State Letters. 15 [2] (2011) H44-H46 10.1149/2.025202esl
- Nobuyuki Matsuki, Yoshihiro Irokawa, Yoshitaka Nakano, Masatomo Sumiya. π-Conjugated polymer/GaN Schottky solar cells. Solar Energy Materials and Solar Cells. 95 [1] (2011) 284-287 10.1016/j.solmat.2010.04.063
2010
- NOBUYUKI MATSUKI, YOSHITAKA NAKANO, YOSHIHIRO IROKAWA, MASATOMO SUMIYA. Hetero-Interface Properties of Novel Hybrid Solar Cells based on Transparent Conductive Polymers and . Journal of Nonlinear Optical Physics & Materials. 19 [04] (2010) 703-711 10.1142/s0218863510005601
- Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai. Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses. physica status solidi (RRL) - Rapid Research Letters. 4 [12] (2010) 374-376 10.1002/pssr.201004421
- Yoshihiro Irokawa. Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt–GaN diodes. Journal of Applied Physics. 108 [9] (2010) 094501 10.1063/1.3496625
2009
- Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes. physica status solidi (RRL) - Rapid Research Letters. 3 [7-8] (2009) 266-268 10.1002/pssr.200903204
- Nobuyuki Matsuki, Yoshihiro Irokawa, Takuya Matsui, Michio Kondo, Masatomo Sumiya. Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes. Applied Physics Express. 2 [9] (2009) 092201 10.1143/apex.2.092201
2008
- Yoshitaka Nakano, IROKAWA, Yoshihiro, TAKEGUCHI, Masaki. Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces. APPLIED PHYSICS EXPRESS. 1 [9] (2008) 091101-1-091101-3
- TAKEGUCHI, Masaki, OKUNO, Hanako, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Characterization of AlInGaN/GaN heterointerface by HAADF-STEM and electron holography. MICROSCOPY AND MICROANALYSIS. (2008) 438-439
2007
- Yoshihiro Irokawa, Yoshiki Sakuma, Takashi Sekiguchi. Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes. Japanese Journal of Applied Physics. 46 [12] (2007) 7714-7716 10.1143/jjap.46.7714
2006
- Takeshi Morikawa, Yoshihiro Irokawa, Takeshi Ohwaki. Enhanced photocatalytic activity of TiO2-xNx loaded with copper ions under visible light irradiation. Applied Catalysis A: General. 314 [1] (2006) 123-127 10.1016/j.apcata.2006.08.011
- Y. Irokawa, O. Ishiguro, T. Kachi, S. J. Pearton, F. Ren. Implantation temperature dependence of Si activation in AlGaN. Applied Physics Letters. 88 [18] (2006) 182106 10.1063/1.2200283
- Yoshihiro Irokawa, Takeshi Morikawa, Koyu Aoki, Satoru Kosaka, Takeshi Ohwaki, Yasunori Taga. Photodegradation of toluene over TiO2-xNx under visible light irradiation. Physical Chemistry Chemical Physics. 8 [9] (2006) 1116 10.1039/b517653k
Books TSV
2011
- Nobuyuki Matsuki, Yoshitaka Nakano, Yoshihiro Irokawa, Mickael Lozach, Masatomo Sumiy. Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells. SOLAR CELLS - NEW ASPECTS AND SOLUTIONS. InTech, 2011, 307-324. 10.5772/20976
2006
- 色川 芳宏, T. Morikawa, K. Aoki, S. Kosaka, T. Ohwaki, Y. Taga. 光化学反応解析と中間生成物について. 会報 光触媒. , 2006, 21-28.
Proceedings TSV
2023
- Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 112 [1] (2023) 109-117 10.1149/11201.0109ecst
2013
- IROKAWA, Yoshihiro. Characterization of the metal-semiconductor interface of Pt-GaN diode hydrogen sensors. MATERIALS SCIENCE FORUM. (2013) 473-476
2012
- IROKAWA, Yoshihiro. Hydrogen sensors based on GaN diodes: The sensing mechanism. Proceedings of IEEE SENSORS 2012 . (2012) 9999-1-9999-4
2010
- IROKAWA, Yoshihiro, MATSUKI, Nobuyuki, SUMIYA, Masatomo, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro, Sumida Yasunobu, Yoshitaka Nakano. Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2010) 1928-1930
- Yoshitaka Nakano, MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Electrical characterization of n-GaN epilayers using transparent polyaniline Schottky contacts. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2010) 2007-2009
2009
- TAKEGUCHI, Masaki, OKUNO, Hanako, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron Holography Observation of AlInGaN/GaN Heterointerfaces. Proceedings of The 9th Asia-Pacific Conference on Electron Microscopy. (2009) 255-256
- Yoshitaka Nakano, Keiji Nakamura, Yoshihiro Irokawa, Masaki Takeguchi. Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. (2009) 9999 10.1557/proc-1202-i09-03
2008
- TAKEGUCHI, Masaki, OKUNO, Hanako, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron holography observation of AlGaN/GaN and AlInGaN/GaN heterointerfaces. the Activity Report of the JSPS 141st Committee. (2008) 1-3
- Hanako Okuno, Masaki Takeguchi, Kazutaka Mitsuishi, Yoshihiro Irokawa, Yoshiki Sakuma, Kazuo Furuya. Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF-STEM. SURFACE AND INTERFACE ANALYSIS. (2008) 1660-1663 10.1002/sia.2960
- IROKAWA, Yoshihiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi. Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2008) 2985-2987
- TAKEGUCHI, Masaki, OKUNO, Hanako, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. HAADF-STEM and electron holography observations of AlInGaN/GaN heterostructures. AMTC Letters. (2008) 66-67
2007
- OKUNO, Hanako, TAKEGUCHI, Masaki, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF-STEM. The activity Report of the JS`S 141st Commitee. (2007) TuP-19- TuP-19
Presentations TSV
2024
2023
- NABATAME, Toshihide, SAWADA, Tomomi, IROKAWA, Yoshihiro, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Improvement of PBS properties for c- and m-GaN/Al2O3/Pt capacitors using a dummy SiO2 layer. 54th IEEE Semiconductor Interface Specialists Conference. 2023
- NABATAME, Toshihide, IROKAWA, Yoshihiro, SAWADA, Tomomi, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Improvement of characteristics for n-GaN/Al2O3/Pt capacitor with the GaN surface modified by the dummy SiO2 process. 2023 International Workshop on Dielectric Thin Films For Future Electron Devices. 2023
- NABATAME, Toshihide, SAWADA, Tomomi, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Characteristics of GaN/High-k capacitors under positive bias stress. 244th ECS Meeting. 2023 Invited
- SAWADA, Tomomi, NABATAME, Toshihide, 高橋 誠, 伊藤 和博, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Crystalline structure of Ga2O3 films on GaN(0001) and sapphire(0001) substrates after annealing process. THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. 2023
- NABATAME, Toshihide, SAWADA, Tomomi, IROKAWA, Yoshihiro, YASUFUKU, Hideyuki, NISHIO, Mitsuaki, KAWADA, Satoshi, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Ga diffusion profile and electrical properties of GaN capacitors with high-k gate insulators. THERMEC 2023 International Conference on Processing & Manufacturing of Advanced MaterialsProcessing, Fabrication, Properties, Applications. 2023 Invited
- 澤田 朋実, 生田目 俊秀, 高橋 誠, 伊藤 和博, 女屋 崇, 色川 芳宏, 小出 康夫, 塚越 一仁. GaN(0001)基板上でのアモルファスGa2O3膜の熱処理による高配向結晶成長. 第28回 電子デバイス界面テクノロジー研究会. 2023
2022
- SAWADA, Tomomi, NABATAME, Toshihide, Makoto Takahashi, Kazuhiro Ito, ONAYA, Takashi, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Structural change of Ga2O3 film on GaN(0001) substrate by atomic layer deposition and post-deposition annealing. MNC2022, 35th International Microprocesses and Nanotechnology Conference. 2022
- NABATAME, Toshihide, SAWADA, Tomomi, Makoto Takahashi, Kazuhiro Ito, ONAYA, Takashi, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Growth of Ga2O3 films on Si and GaN substrates by atomic layer deposition and post-deposition annealing. Visual-JW 2022 & DEJI2MA-2. 2022 Invited
- KOIDE, Yasuo, NABATAME, Toshihide, IROKAWA, Yoshihiro, MITSUISHI, Kazutaka. Surface and oxide interface characterization of n and p-GaN for power electronics. 19th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors: DRIP XIX. 2022 Invited
2021
- 生田目 俊秀, 前田 瑛里香, 井上 万里, 廣瀨 雅史, Ryota Ochi, 澤田 朋実, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, 塚越 一仁, 小出 康夫. Study of HfO2-based High-k gate insulators for GaN power device. 240th ECS Meeting / https://www.electrochem.org/240/. 2021 Invited
- 生田目 俊秀, 前田 瑛里香, 井上 万里, 廣瀨 雅史, Ryota Ochi, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫. Investigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device. AWAD2021. 2021 Invited
- 生田目 俊秀, 前田 瑛里香, 井上 万里, Ryota Och, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫. Study of HfSiOx film as gate insulator for GaN power device. 20th International Workshop on Junction Technology 2021. 2021 Invited
- 生田目 俊秀, 色川 芳宏, Akira Uedono, 大井 暁彦, 池田 直樹, 小出 康夫. Investigation of Al2O3/GaN interface using photo-assisted capacitance-voltage technique. INTERNATIONAL CONFERENCE ON PROCESSING & MANUFACTURING OF ADVANCED MATERIALS(THERMEC'2021). 2021 Invited
2020
- NABATAME, Toshihide, Takashi Onaya, Erika Maeda, Masashi Hirose, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo. Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices. 20th International conference on Atomic Layer Deposition (ALD/ALE 2020). 2020 Invited
- KANO, Emi, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, NABATAME, Toshihide, KIMOTO, Koji, 加地徹, KOIDE, Yasuo. Crystallization differences of Al2O3 on GaN planes. 日本顕微鏡学会第76回学術講演会. 2020
- 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 大井 暁彦, 池田 直樹, 色川 芳宏, 小出 康夫, 清野肇. PDA雰囲気ガスがn-β-Ga2O3/Al2O3/Pt MOSキャパシタの電気特性へ及ぼす影響. 第67回応用物理学会春季学術講演会. 2020
- 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 大井 暁彦, 池田 直樹, 色川 芳宏, 小出 康夫, 清野肇. Al2O3/β-Ga2O3スタック構造のPMA効果と界面特性の関係. 電子デバイス界面テクノロジー研究会 ー材料・プロセス・デバイス特性の物理ー. 2020
- 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 大井 暁彦, 池田 直樹, 色川 芳宏, 小出 康夫, 清野肇. Al2O3/β-Ga2O3スタック構造のPMA効果と界面特性の関係. 電子デバイス界面テクノロジー研究会 ー材料・プロセス・デバイス特性の物理ー. 2020
2019
- NABATAME, Toshihide, IROKAWA, Yoshihiro, 塩崎 宏司, KOIDE, Yasuo. Electrical properties of GaN MOS capacitors with ALD-High-k gate insulators. MATERIALS RESEARCH MEETING 2019. 2019 Invited
- IROKAWA, Yoshihiro. Native Oxides on GaN(0001) and Crystalline Intermediate Layers in Oxides/GaN(0001). The 2019 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (2019 IWDTF). 2019 Invited
- 廣瀨 雅史, NABATAME, Toshihide, 前田 瑛里香, OHI, Akihiko, IKEDA, Naoki, IROKAWA, Yoshihiro, KOIDE, Yasuo, 清野肇. Influence of post-metallization annealing on the characteristics of Pt/Al2O3/n-β-Ga2O3 capacitors after post-deposition annealing. 2019 IWDTF. 2019
- NABATAME, Toshihide, 前田 瑛里香, INOUE, Mari, 廣瀨 雅史, 清野肇, IROKAWA, Yoshihiro, 塩崎宏司, KOIDE, Yasuo. Characteristics of several High-k gate insulators for GaN power device. 236th ECS Meeting. 2019 Invited
- 三石 和貴, 木本 浩司, 色川 芳宏, 生田目 俊秀, 小出 康夫. 電子顕微鏡による電子材料評価技術の最近の発展. 第 38 回電子材料シンポジウム (EMS38). 2019 Invited
- 廣瀨 雅史, 生田目 俊秀, 前田 瑛里香, 池田 直樹, 大井 暁彦, 色川 芳宏, 岩井 秀夫, 安福 秀幸, 川田 哲, 高橋誠, 伊藤和博, 小出 康夫, 清野肇. Pt/Al2O3/β-Ga2O3 MOSキャパシタの熱処理温度による電気特性の変化. 第80回応用物理学会秋季学術講演. 2019
- 廣瀨 雅史, NABATAME, Toshihide, 前田 瑛里香, OHI, Akihiko, IKEDA, Naoki, IROKAWA, Yoshihiro, KOIDE, Yasuo, 清野肇. Influence of surface cleaning process on initial growth of ALD-Al2O3 and electrical properties of Pt/Al2O3/β-Ga2O3 MOS capacitors. ALD2019. 2019
- HIROSE, Masafumi, NABATAME, Toshihide, YUGE, Kazuya, MAEDA, Erika, OHI, Akihiko, IKEDA, Naoki, IROKAWA, Yoshihiro, IWAI, Hideo, 安福 秀幸, KAWADA, Satoshi, KOIDE, Yasuo. Influence of post-deposition annealing on electrical characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. INFOS 2019. 2019
- 色川 芳宏. 自立GaNエピ基板の表面および酸化膜界面評価. GaNコンソSWG3第6回会合. 2019 Invited
- YUGE, Kazuya, NABATAME, Toshihide, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, 上殿 明良, SANG, Liwen, KOIDE, Yasuo, 大石 知司. Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. Electron Devices Technology and Manufacturing Conference. 2019
- SEO, Okkyun, KIM, Jaemyung, HIROI, Satoshi, IROKAWA, Yoshihiro, NABATAME, Toshihide, KOIDE, Yasuo, SAKATA, Osami. Characterization of a GaN wafer and a homo-epitaxial layer by synchrotron X-ray topography techniques. The 66th JSAP Spring Meeting, 2019. 2019
- 廣瀨雅史, 生田目俊秀, 大井暁彦, 前田瑛里香, 弓削雅津也, 池田直樹, 色川芳宏, 小出康夫. Al2O3絶縁膜を用いたn-GaN及びn-β-Ga2O3キャパシタの電気特性の比較. 第24回電子デバイス界面テクノロジー研究会. 2019
- 弓削 雅津也, 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, 上殿明殿, サン リウエン, 小出 康夫, 大石知司. Al2O3/n-GaN界面での伝導帯/価電子帯近傍の界面準位密度に関する研究. 膜・表面物理分科会、シリコンテクノロジー分科会. 2019
2018
- キム ジェミョン, ソ オッキュン, ソン チョルホ, 廣井 慧, チェン ヤナ, 色川 芳宏, 生田目 俊秀, 小出 康夫, 坂田 修身. Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography. IWN 2018. 2018
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Crystalline intermediate layers in oxides/GaN(0001). International Workshop on Nitride Semiconductors 2018. 2018
- 生田目 俊秀, 色川 芳宏, Koji Shiozaki, 小出 康夫. Study of High-k gate insulator for GaN power device by atomic layer deposition. 31st International Microprocesses and Nanotechnology Conference. 2018 Invited
- 色川 芳宏, 三石 和貴, 鈴木 拓, 弓削 雅津也, 大井 暁彦, 生田目 俊秀, 大西 剛, 木本 浩司, 小出 康夫. Comprehensive Study of Native Oxides on GaN(0001). International Workshop on Nitride Semiconductors 2018. 2018
- 坂田 修身, キム ジェミョン, ソ オッキュン, ソン チョルホ, チェン ヤナ, 廣井 慧, 色川 芳宏, 生田目 俊秀, 小出 康夫. ホモエピタキシャルGaN (0001)格子面の方位マッピング. 日本結晶学会2018年度年会. 2018
- 廣瀨 雅史, 生田目 俊秀, 弓削 雅津也, 前田 瑛里香, 大井 暁彦, 色川 芳宏, 小出 康夫, 池田 直樹. 表面処理方法がβ-Ga2O3/Al2O3/Pt MOSキャパシタの電気特性へ及ぼす影響. 第79回応用物理学会秋季学術講演会. 2018
- キム ジェミョン, ソ オッキュン, ソン チョルホ, 廣井 慧, チェン ヤナ, 色川 芳宏, 生田目 俊秀, 小出 康夫, 坂田 修身. Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography. JSAP Autumn Meeting 2018. 2018
- 色川 芳宏, 鈴木 拓, 弓削 雅津也, 大井 暁彦, 生田目 俊秀, 木本 浩司, 大西 剛, 三石 和貴, 小出 康夫. GaN(0001)自然酸化膜の複合的評価. 第79回応用物理学会秋季学術講演会. 2018
- 廣瀨 雅史, 生田目 俊秀, 弓削 雅津也, 前田 瑛里香, 大井 暁彦, 色川 芳宏, 小出 康夫, 池田 直樹. 表面処理方法がβ-Ga2O3/Al2O3/Pt MOSキャパシタの電気特性へ及ぼす影響. 第79回応用物理学会秋季学術講演会. 2018
- 小出 康夫, 生田目 俊秀, 色川 芳宏, 三石 和貴. GaN系絶縁膜制御技術. 応用物理学会 特別シンポジウム:GaNのエピタキシャル成長とデバイス. 2018 Invited
- 弓削 雅津也, 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, 上殿 明良, サン リウエン, 小出 康夫, 大石 知司. 光支援C-V法を用いたAl2O3/n-GaN界面ディープトラップの分析. Solid State Devices and Materials. 2018
- 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, サン リウエン, 小出 康夫, 大石知司. Al2O3/n-GaNキャパシタの自然酸化膜層が電気特性へ及ぼす影響. シリコン材料・デバイス研究会 (SDM). 2018
- 小出 康夫, 坂田 修身, 渡邊 賢司, 三石 和貴, 生田目 俊秀, 色川 芳宏. p-GaN中の結晶欠陥の複合的な評価. 応用物理学会 結晶工学分科 会第149回結晶工学分科会研究会. 2018 Invited
- 弓削 雅津也, 色川 芳宏, 大井 暁彦, 池田 直樹, サン リウエン, 大石知司, 小出 康夫. Role of a native oxide interlayer on electrical characteristics of Al2O3/n-GaN capacitors. Joint ISTDM/ISCI 2018 Conference. 2018
- 弓削 雅津也, 生田目 俊秀, 色川 芳宏, 大井 暁彦, 池田 直樹, サン リウエン, 知京 豊裕, 小出 康夫, 大石 知司. Al2O3/n-GaNキャパシタの酸化ガリウム界面層が電気特性へ及ぼす影響. 第65回応用物理学会春季学術講演会. 2018
2017
- 色川 芳宏, 鈴木 拓, 弓削 雅津也, 大井 暁彦, 生田目 俊秀, 木本 浩司, 大西 剛, 三石 和貴, 小出 康夫. Surface analysis of native oxides on GaN(0001): An LEIS and RHEED study. 第18回「イオンビームによる表面・界面解析」特別研究会. 2017
- 色川 芳宏, 三石 和貴. 窒化ガリウムトランジスタに原子レベルで平坦な結晶層を新発見. 電気学会「次世代化合物半導体デバイスの機能と応用(第2期)」調査専. 2017 Invited
- 色川 芳宏. 水素とGaNデバイスの相互作用機構の研究. 第16回 GaN研究戦略会議_研究WG. 2017 Invited
2016
- 色川 芳宏. Electrochemical Impedance Spectroscopy Study of Hydrogen Interaction with Nitride-Based Semiconductor Diodes. 10th International Symposium on EIS. 2016
- 色川 芳宏. 半導体デバイス型水素センサの動作機構の研究. 第63回応用物理学会春季学術講演会. 2016
2015
- 色川 芳宏. 半導体デバイスを用いた水素センサーの動作機構の解明. NIMS ナノシミュレーション ワークショップ 2015. 2015 Invited
2013
- Y. Naknao, 色川 芳宏, 角谷 正友, Y. Sumida, S. Yagi, H. Kawai. Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations. 2013 MRS Fall meeting. 2013
- 大島 祐一, 中村 優, 色川 芳宏, 正義彦, ビジョラ ガルシア, 島村 清史, 一ノ瀬昇. 昇華法によるAlN単結晶の育成と評価. 第51回セラミックス基礎科学討論会. 2013
2012
- IROKAWA, Yoshihiro. Hydrogen sensors based on GaN diodes: The sensing mechanism. IEEE SENSORS 2012. 2012
- IROKAWA, Yoshihiro. Characterization of the metal-semiconductor interface of Pt-GaN diode hydrogen sensors. ECSCRM-2012. 2012
2011
- 色川 芳宏. Research of Hydrogen Gas Sensor of Nitride Semiconductor. NIMS-LG seminar. 2011 Invited
- 色川 芳宏. Solid state hydrogen gas sensing: Nitride-based semiconductor sensors. Nano Korea 2011. 2011 Invited
- IROKAWA, Yoshihiro. Hydrogen Interaction with GaN Metal-Insulator-Semiconductor Diodes. 26th International Conference on Defects in Semiconductors. 2011
2009
- 中野 由崇, 中村圭二, 色川 芳宏, 竹口 雅樹. Interface States in AlGaN/GaN Hetero-Structure Probed by Deep-Level Optical Spectroscopy. 8th International Conference on Nitride Semiconductors (ICNS-8). 2009
- IROKAWA, Yoshihiro. Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen. The 8th International Conference on Nitride Semiconductors. 2009
- MATSUKI, Nobuyuki, Yoshitaka Nakano, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Electrical Interface Structure of Schottky Junctions by π-conjugated Polymer/III-nitride Hetero Structure. SSDM 2009. 2009
- 中野由崇, 中村圭二, 色川 芳宏, 竹口 雅樹. Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy. 13th International Conference on Defects - Recognition, Imaging. 2009
- 松木 伸行, 中野由崇, 色川 芳宏, ミカエル・ロザック, 迫田 和彰, 角谷 正友. 透明導電性高分子/III族窒化物半導体ショットキー型太陽電池の界面構造. 応用物理学会 2009年秋季第70回学術講演会. 2009
- 中野由崇, 中村圭二, 色川 芳宏, 竹口 雅樹. Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy. 8th Topical Workshop on Heterostructure Microelectronics. 2009
- MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Schottky solar cells by III-V nitrides and transparent conductive polymer thin-films. 第28回電子材料シンポジウム(EMS28). 2009
- 松木 伸行, 色川 芳宏, 中野, 角谷 正友. 透明導電性高分子とIII族窒化物半導体によるヘテロ接合太陽電池. 第6回「次世代の太陽光発電システム」シンポジウム. 2009
- 松木 伸行, 色川 芳宏, 角谷 正友. 透明導電性高分子と窒化物薄膜の接合による太陽電池の開発. 第1回窒化物半導体結晶成長講演会. 2009
- 中野 由崇, 色川 芳宏, 竹口 雅樹. AlGaN/GaNヘテロ構造の界面電子物性評価. 2009年春季 第56回応用物理学関係連合講演会. 2009
- 松木 伸行, 色川 芳宏, 伊高 健治, 鯉沼 秀臣, 角谷 正友. 導電性透明高分子/GaN接合によるショットキー型太陽電池の開発. 平成21年春季第56回応用物理学関係連合講演会. 2009
2008
- 中野由崇, 色川 芳宏, 竹口 雅樹. Al0.3Ga0.7N/GaNヘテロ構造のDLOS評価. 2008年秋季 第69回応用物理学会学術講演会. 2008
- 色川 芳宏. 窒化物系半導体を用いた耐環境性水素ガスセンサーの研究. 双葉電子記念財団 第14回自然科学研究助成成果発表会. 2008 Invited
- 竹口 雅樹, 奥野 華子, 色川 芳宏, 佐久間 芳樹, 古屋 一夫. AlInGaN/GaNのHAADF-STEMと電子線ホログラフィーによる評価. 日本顕微鏡学会第64回学術講演会. 2008
- 竹口 雅樹, 奥野 華子, 色川 芳宏, 佐久間 芳樹, 古屋 一夫. AlGaN/GaNヘテロ界面における二次元電子ガスの電子線ホログラフィー観察. 第55回応用物理学会. 2008
2007
- 奥野 華子, 竹口 雅樹, 三石 和貴, 色川 芳宏, 佐久間 芳樹, 古屋 一夫. III族窒化物半導体のTEM/STEM観察. 平成19年度NIMSナノ計測センター研究成果発表会. 2007
- IROKAWA, Yoshihiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi. Effects of Surface States on Hydrogen Sensing Performance of Pt-GaN Schottky Diodes. The 34th International Symposium on Compound Semiconductors. 2007
- 奥野 華子, 竹口 雅樹, 三石 和貴, 色川 芳宏, 佐久間 芳樹, 古屋 一夫. III族窒化物半導体のHAADF-STEM観察. 2007年秋季 第68回学術講演会. 2007
- 奥野 華子, 竹口 雅樹, 三石 和貴, 郭 行健, 色川 芳宏, 佐久間 芳樹, 古屋 一夫. GaN系材料のZコントラストイメージング. NIMS conference. 2007
- 竹口 雅樹, 奥野 華子, 古屋 一夫, 色川 芳宏. 電子線ホログラフィーによるGaN系材料のへテロナノ構造の電界測定. 日本顕微鏡学会第63回学術講演会. 2007 Invited
- IROKAWA, Yoshihiro. High Temperature Annealing Behavior of Si Implanted GaN. 2nd IAMF and ICYS Workshop. 2007
Misc TSV
2009
- TAKEGUCHI, Masaki, OKUNO, Hanako, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron Holography Observation of AlInGaN/GaN Heterointerfaces. Proceedings of The 9th Asia-Pacific Conference on Electron Microscopy. (2009) 255-256
2008
- TAKEGUCHI, Masaki, OKUNO, Hanako, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron holography observation of AlGaN/GaN and AlInGaN/GaN heterointerfaces. the Activity Report of the JSPS 141st Committee. (2008) 1-3
2007
- 大脇健史, 森川健志, 青木恒勇, 小坂悟, 色川 芳宏, 多賀康訓. 可視光応答型光触媒表面におけるVOCガスの光化学反応. 表面科学. 28 [10] (2007) 586-592
- OKUNO, Hanako, TAKEGUCHI, Masaki, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF-STEM. The activity Report of the JS`S 141st Commitee. (2007) TuP-19- TuP-19
Published patent applications TSV
- 半導体装置および半導体装置の製造方法 (2020)
- 半導体装置および半導体装置の製造方法 (2020)
- 半導体基板、半導体基板の製造方法およびそれを用いた半導体装置 (2020)
- 半導体装置および半導体装置の製造方法 (2020)
- ガリウム窒化物半導体基板の製造方法、ガリウム窒化物半導体装置の製造方法および撮像素子の製造方法 (2019)
- 窒化ガリウム系の半導体装置及びその製造方法 (2019)
- n型半導体材料、p型半導体材料および半導体素子 (2017)
- 窒化物半導体素子の製造方法 (2014)
- AIN単結晶ショットキーバリアダイオード及びその製造方法 (2013)
- ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池 (2012)
- ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2011)
- 電子素子 (2009)