publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at Paper 2023 1 Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi ECS Transactions 112 1 109 117 https://doi.org/10.1149/11201.0109ecst 2024-03-29 22:55:41 +0900 Paper 2023 2 Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide ECS Journal of Solid State Science and Technology 12 5 055007 https://doi.org/10.1149/2162-8777/acd1b4 2024-03-29 22:55:41 +0900 Paper 2022 1 Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide ECS Journal of Solid State Science and Technology 11 8 085010 https://doi.org/10.1149/2162-8777/ac8a70 2024-03-29 22:55:41 +0900 Paper 2021 1 Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition Journal of Vacuum Science & Technology A 39 6 062405 https://doi.org/10.1116/6.0001334 2024-03-29 22:55:41 +0900 Paper 2021 2 Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide Study of HfO2-based High-k gate Insulators for GaN Power Device ECS Transactions 113 120 https://doi.org/10.1149/10404.0113ecst 2024-03-29 22:55:41 +0900 Paper 2021 3 Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates Japanese Journal of Applied Physics 60 6 068003 https://doi.org/10.35848/1347-4065/ac0260 2024-03-29 22:55:41 +0900 Paper 2021 4 Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing Journal of Vacuum Science & Technology A 39 1 012401 https://doi.org/10.1116/6.0000626 2024-03-29 22:55:41 +0900 Paper 2020 1 Yoshihiro Irokawa Effect of hydrogen on Pt/GaN Schottky diodes Japanese Journal of Applied Physics 59 12 120901 https://doi.org/10.35848/1347-4065/abc65f 2024-03-29 22:55:41 +0900 Paper 2020 2 Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography RSC Advances 10 4 1878 1882 https://doi.org/10.1039/c9ra08882b 2024-03-29 22:55:41 +0900 Paper 2019 1 生田目 俊秀 Characteristics of Several High-k Gate Insulators for GaN Power Device ECS Transactions 109 117 https://doi.org/10.1149/09204.0109ecs 2024-03-29 22:55:41 +0900 Paper 2019 2 Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors Japanese Journal of Applied Physics 58 10 100915 https://doi.org/10.7567/1347-4065/ab476a 2024-03-29 22:55:41 +0900 Paper 2019 3 Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique AIP Advances 9 8 085319 https://doi.org/10.1063/1.5098489 2024-03-29 22:55:41 +0900 Paper 2019 4 Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors Microelectronic Engineering 216 111040 https://doi.org/10.1016/j.mee.2019.111040 2024-03-29 22:55:41 +0900 Paper 2019 5 Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer CrystEngComm 21 27 4036 4041 https://doi.org/10.1039/c9ce00463g 2024-03-29 22:55:41 +0900 Paper 2019 6 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography CrystEngComm 21 14 2281 2285 https://doi.org/10.1039/c8ce01906a 2024-03-29 22:55:41 +0900 Paper 2019 7 Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing Semiconductor Science and Technology 34 3 034001 https://doi.org/10.1088/1361-6641/aafdbd 2024-03-29 22:55:41 +0900 Paper 2019 8 Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide 71Ga NMR characterization of an n-doped free-standing gallium nitride wafer Japanese Journal of Applied Physics 58 3 031003 https://doi.org/10.7567/1347-4065/aafd1a 2024-03-29 22:55:41 +0900 Paper 2019 9 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata "Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography" Physical Review Applied 11 2 https://doi.org/10.1103/physrevapplied.11.024072 2024-03-29 22:55:41 +0900 Paper 2018 1 色川芳宏, 三石和貴, 生田目俊秀, 木本浩司, 小出康夫 Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy JAPANESE JOURNAL OF APPLIED PHYSICS 57 11 2024-03-29 22:55:41 +0900 Paper 2018 2 Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Characterization of a 4-inch GaN wafer by X-ray diffraction topography CrystEngComm 20 48 7761 7765 https://doi.org/10.1039/c8ce01440j 2024-03-29 22:55:41 +0900 Paper 2018 3 Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates Nanoscale Research Letters 13 1 https://doi.org/10.1186/s11671-018-2804-y 2024-03-29 22:55:41 +0900 Paper 2018 4 Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto, Yasuo Koide Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001) Japanese Journal of Applied Physics 57 9 098003 https://doi.org/10.7567/jjap.57.098003 2024-03-29 22:55:41 +0900 Paper 2018 5 Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer Applied Physics Express 11 8 081002 https://doi.org/10.7567/apex.11.081002 2024-03-29 22:55:41 +0900 Paper 2018 6 Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer AIP Advances 8 7 075318 https://doi.org/10.1063/1.5042098 2024-03-29 22:55:41 +0900 Paper 2018 7 Yanfang Lou, Chulho Song, Yanna Chen, Loku Singgappulige Rosantha Kumara, Natalia Palina, Okkyun Seo, Satoshi Hiroi, Kentaro Kajiwara, Masato Hoshino, Kentaro Uesugi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates CrystEngComm 20 20 2861 2867 https://doi.org/10.1039/c8ce00229k 2024-03-29 22:55:41 +0900 Paper 2017 1 Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, Yasuo Koide Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001) Japanese Journal of Applied Physics 56 12 128004 https://doi.org/10.7567/jjap.56.128004 2024-03-29 22:55:41 +0900 Paper 2017 2 Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, Yasuo Koide Electron microscopy studies of the intermediate layers at the SiO2/GaN interface Japanese Journal of Applied Physics 56 11 110312 https://doi.org/10.7567/jjap.56.110312 2024-03-29 22:55:41 +0900 Paper 2016 1 Yoshihiro Irokawa, Mamoru Usami First-principles calculations of semiconducting TiMgN2 Japanese Journal of Applied Physics 55 9 098001 https://doi.org/10.7567/jjap.55.098001 2024-03-29 22:55:41 +0900 Paper 2015 1 Yoshihiro Irokawa, Mamoru Usami First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces Sensors 15 6 14757 14765 https://doi.org/10.3390/s150614757 2024-03-29 22:55:41 +0900 Paper 2015 2 Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures Philosophical Magazine Letters 95 6 333 339 https://doi.org/10.1080/09500839.2015.1062154 2024-03-29 22:55:41 +0900 Paper 2014 1 Y. Irokawa Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes ECS Electrochemistry Letters 3 11 B17 B19 https://doi.org/10.1149/2.0041411eel 2024-03-29 22:55:41 +0900 Paper 2013 1 Yoshihiro Irokawa Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors Journal of Applied Physics 113 2 026104 https://doi.org/10.1063/1.4775410 2024-03-29 22:55:41 +0900 Paper 2012 1 Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures Journal of Applied Physics 112 10 106103 https://doi.org/10.1063/1.4767367 2024-03-29 22:55:41 +0900 Paper 2012 2 Y. Irokawa Physica B: Condensed Matter 407 15 2957 2959 https://doi.org/10.1016/j.physb.2011.08.054 2024-03-29 22:55:41 +0900 Paper 2012 3 Yoshihiro Irokawa, Encarnación A. García Víllora, Kiyoshi Shimamura Japanese Journal of Applied Physics 51 4R 040206 https://doi.org/10.7567/jjap.51.040206 2024-03-29 22:55:41 +0900 Paper 2011 1 Yoshihiro Irokawa 2011, 11(1), 674-695 Sensors 11 1 674 695 https://doi.org/10.3390/s110100674 2024-03-29 22:55:41 +0900 Paper 2011 2 Y. Nakano, Y. Irokawa, Y. Sumida, S. Yagi, H. Kawai Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures Electrochemical and Solid-State Letters 15 2 H44 H46 https://doi.org/10.1149/2.025202esl 2024-03-29 22:55:41 +0900 Paper 2011 3 Nobuyuki Matsuki, Yoshihiro Irokawa, Yoshitaka Nakano, Masatomo Sumiya 導電性高分子による透明ショットキー電極およびIII族窒化物太陽電池への応用 Solar Energy Materials and Solar Cells 95 1 284 287 https://doi.org/10.1016/j.solmat.2010.04.063 2024-03-29 22:55:41 +0900 Paper 2010 1 NOBUYUKI MATSUKI, YOSHITAKA NAKANO, YOSHIHIRO IROKAWA, MASATOMO SUMIYA 有機導電性薄膜/GaNハイブリッド太陽電池の界面評価 Journal of Nonlinear Optical Physics & Materials 19 04 703 711 https://doi.org/10.1142/s0218863510005601 2024-03-29 22:55:41 +0900 Paper 2010 2 Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses physica status solidi (RRL) - Rapid Research Letters 4 12 374 376 https://doi.org/10.1002/pssr.201004421 2024-03-29 22:55:41 +0900 Paper 2010 3 Yoshihiro Irokawa Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt–GaN diodes Journal of Applied Physics 108 9 094501 https://doi.org/10.1063/1.3496625 2024-03-29 22:55:41 +0900 Paper 2009 1 Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes physica status solidi (RRL) - Rapid Research Letters 3 7-8 266 268 https://doi.org/10.1002/pssr.200903204 2024-03-29 22:55:41 +0900 Paper 2009 2 Nobuyuki Matsuki, Yoshihiro Irokawa, Takuya Matsui, Michio Kondo, Masatomo Sumiya ポリアニリン/n-GaN ショットキーダイオードの光電変換動作 Applied Physics Express 2 9 092201 https://doi.org/10.1143/apex.2.092201 2024-03-29 22:55:41 +0900 Paper 2008 1 Yoshitaka Nakano, IROKAWA, Yoshihiro, TAKEGUCHI, Masaki Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces APPLIED PHYSICS EXPRESS 1 9 091101-1 091101-3 2024-03-29 22:55:41 +0900 Paper 2008 2 TAKEGUCHI, Masaki, OKUNO, Hanako, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo MICROSCOPY AND MICROANALYSIS 438 439 2024-03-29 22:55:41 +0900 Paper 2007 1 Yoshihiro Irokawa, Yoshiki Sakuma, Takashi Sekiguchi Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes Japanese Journal of Applied Physics 46 12 7714 7716 https://doi.org/10.1143/jjap.46.7714 2024-03-29 22:55:41 +0900 Paper 2006 1 Takeshi Morikawa, Yoshihiro Irokawa, Takeshi Ohwaki Applied Catalysis A: General 314 1 123 127 https://doi.org/10.1016/j.apcata.2006.08.011 2024-03-29 22:55:41 +0900 Paper 2006 2 Y. Irokawa, O. Ishiguro, T. Kachi, S. J. Pearton, F. Ren Applied Physics Letters 88 18 182106 https://doi.org/10.1063/1.2200283 2024-03-29 22:55:41 +0900 Paper 2006 3 Yoshihiro Irokawa, Takeshi Morikawa, Koyu Aoki, Satoru Kosaka, Takeshi Ohwaki, Yasunori Taga Physical Chemistry Chemical Physics 8 9 1116 https://doi.org/10.1039/b517653k 2024-03-29 22:55:41 +0900